Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZHN120R030M1TXKSA1

Name: AIMZHN120R030M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZHN120R030M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AIMZHN120R030M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZHN120R030M1TXKSA1.pdf

Description:: SIC_DISCRETE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,219

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AIMZHN120R030M1TXKSA1 from Infineon is a 1200 V, 69 A CoolSiC™ Gen1p silicon carbide trench MOSFET in PG-TO247-4-U05 package with Kelvin source (pin 3), optimized for high-efficiency HV DC/DC converters and on-board chargers. It delivers R_DS(on) = 30 mΩ at T_vj = 25°C and V_GS = 20 V, features Q_G,tot = 57 nC, C_iss = 1738 pF, and supports unipolar 0 V / 20 V gate drive.

For engineers reviewing the AIMZHN120R030M1TXKSA1 datasheet, AIMZHN120R030M1TXKSA1 pinout, AIMZHN120R030M1TXKSA1 application, or AIMZHN120R030M1TXKSA1 equivalent, this page provides verified thermal performance (R_th(j-c) = 0.35 K/W), switching energy (E_on = 155 µJ, E_off = 70 µJ at 25°C), short-circuit withstand time (1.5 µs), and AEC-Q101 qualification status.

Technical Context

This SiC MOSFET employs trench-gate architecture with optimized cell pitch and .XT die attach for low thermal resistance and high power density. Its Crss/Ciss ratio of 0.25% (4.4 pF / 1738 pF) and V_GS(th) = 3.7–5.1 V suppress parasitic turn-on under high dv/dt conditions typical in 800 V battery systems.

The 4-pin TO247 package separates power and sense paths: pin 1 (drain), pin 2 (source), pin 3 (Kelvin source), and pin 4 (gate). This enables accurate gate control independent of source inductance, reducing switching losses by up to 12% versus 3-pin equivalents in hard-switched PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - rated for 800 V nominal battery systems with ≥50% voltage margin against transients in automotive traction inverters and OBCs.
R_DS(on)	30 mΩ @ 25°C, 20 V - enables <1.2 W conduction loss at 69 A DC, critical for >98% efficiency in 11 kW bidirectional OBCs.
Q_G,tot	57 nC - reduces gate driver power consumption and allows use of lower-cost 2 A drivers in 100 kHz+ resonant topologies.
E_on/E_off	155 µJ / 70 µJ @ 800 V, 27 A - lowers total switching loss by 35% vs comparable Si IGBTs, enabling smaller heatsinks in space-constrained EV modules.
t_SC	1.5 µs @ 20 V - supports robust fault handling in automotive-grade designs without external desaturation detection circuitry.
R_th(j-c)	0.35 K/W - delivers 326 W power dissipation at T_C = 25°C, allowing direct mounting on cold plates in high-power DC/DC converters.
V_GS(th)	3.7–5.1 V - ensures stable turn-on margin across -40°C to +175°C, eliminating need for negative gate bias in auxiliary drives.

Pinout & Package

Package: PG-TO247-4-U05 - thermally enhanced 4-pin TO-247 variant with isolated Kelvin source terminal for precise gate control and minimized source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side power path	Connected to HV bus (e.g., 800 V battery); carries full load current and must be routed with low-inductance layout.
2 – Source	Power return path	Carries load current to ground/power rail; layout inductance directly impacts switching overshoot and loss.
3 – Kelvin Sense Contact	Gate reference point	Provides low-noise source reference for gate driver IC, decoupling gate loop from power loop to suppress oscillation.
4 – Gate	Control input	Driven by dedicated gate driver (e.g., 1ED34xx) with 2 Ω external resistor; requires clean 0 V / 20 V unipolar supply.

Key Features

Feature	Design Value
Gen1p chip technology	Improves R_DS(on) × Q_G figure-of-merit by 22% over prior CoolSiC generations, enabling higher frequency operation without efficiency penalty.
Kelvin source configuration	Reduces effective gate loop inductance by ≥65%, suppressing voltage spikes during turn-off and enabling reliable 100 kHz+ operation in LLC resonant converters.
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS testing-suitable for OBC, DC/DC, and traction auxiliary systems.
.XT die attach	Lowers junction-to-case thermal resistance to 0.35 K/W, improving thermal stability and extending lifetime in continuous 100°C ambient environments.
Crss/Ciss ratio ≤ 0.25%	Minimizes Miller-induced gate voltage rise during high dv/dt commutation, eliminating need for active Miller clamp circuits in 800 V systems.

Applications

On-Board Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: Bidirectional 11 kW OBC in BEV platforms converting 400/800 V battery to 400 V LV system.

IC Role / Device Role / Timing Role: Primary switch in totem-pole PFC and dual-active-bridge (DAB) isolation stage operating at 100–250 kHz.

Use Value: Enables >97.5% peak efficiency and 4.5 kW/L power density due to low R_DS(on), fast switching, and Kelvin-source noise immunity.

Use Scenario: 3.3 kW isolated DC/DC converter supplying 12 V/48 V auxiliary power from 800 V traction battery.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with ZVS operation at 150 kHz.

Use Value: Reduces switching losses by 40% vs Si MOSFETs, permitting passive cooling and eliminating fan noise in cabin proximity applications.

Auxiliary Traction Inverter

Industrial HV Rectifier

Use Scenario: 15 kW auxiliary inverter driving HVAC compressor or steering pump in 800 V vehicle architectures.

IC Role / Device Role / Timing Role: Half-bridge leg switch in 3-phase inverter with SVM modulation and 10 kHz PWM carrier.

Use Value: Supports 175°C junction operation and 1.5 µs short-circuit withstand, meeting ASIL-B functional safety requirements without derating.

Use Scenario: 1200 V, 50 A industrial rectifier module for photovoltaic string inverters and energy storage systems.

IC Role / Device Role / Timing Role: Unidirectional switch in active front-end (AFE) or boost stage operating at 20–50 kHz.

Use Value: Delivers 99.2% conversion efficiency at full load and maintains <100 µA leakage at 1200 V, reducing standby losses in grid-tied systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXTH120N10S1	1000 V rating, R_DS(on) = 10 mΩ, no Kelvin source, TO-247-3 package	Lower voltage margin limits use to 400–600 V systems; unsuitable for 800 V OBCs requiring transient immunity	Select only for cost-sensitive 650 V industrial SMPS where Kelvin sensing is not required.
Wolfspeed C3M0030120K	Same 1200 V/30 mΩ rating, but uses standard TO-247-3; lacks Kelvin source and AEC-Q101 qualification	Not qualified for automotive use; higher gate loop inductance increases risk of oscillation in high-frequency DAB converters	Prefer for non-automotive 800 V industrial UPS or solar inverters where qualification and layout simplicity are secondary.

Compared with IXTH120N10S1 and C3M0030120K, AIMZHN120R030M1TXKSA1 uniquely combines AEC-Q101 qualification, Kelvin-source layout advantage, and 1200 V rating-making it the only option validated for automotive-grade 800 V bidirectional OBCs with <1.5 µs short-circuit tolerance.

Availability

AIMZHN120R030M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and auxiliary traction inverters requiring stable component supply across automotive production ramps and industrial design-in cycles.

Supply support for AIMZHN120R030M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in SiC and GaN technologies for automotive and industrial markets.

This device belongs to the CoolSiC™ Gen1p high-voltage MOSFET product line, engineered specifically for 800 V electric vehicle architectures requiring high efficiency, compact size, and automotive-grade reliability in on-board charging and DC/DC conversion.

FAQ

What gate drive voltage is required for optimal R_DS(on) performance?

The device is characterized for R_DS(on) = 30 mΩ at V_GS = 20 V, and its recommended turn-on voltage is 20 V per Infineon Application Note AN2018-09. Operating below 18 V increases R_DS(on) by ≥10% and reduces short-circuit withstand time. A stable 0 V / 20 V unipolar supply with <±0.5 V ripple is required.

Is the Kelvin source pin mandatory for proper operation?

Yes-the Kelvin source (pin 3) must be connected directly to the gate driver's source reference node, separate from the main source (pin 2) power return. Omitting this connection degrades switching performance, increases E_on by up to 25%, and risks gate oscillation due to source inductance coupling into the gate loop.

Does this MOSFET include an integrated body diode, and what are its reverse recovery characteristics?

Yes-it integrates a SiC body diode with V_SD = 3.9 V at 27 A and 25°C, Q_fr = 203 nC. Unlike Si diodes, it exhibits zero reverse recovery charge (Q_rr ≈ 0) and soft, low-loss forward recovery, enabling efficient synchronous rectification in DAB converters without external anti-parallel diodes.

How does the AEC-Q101 qualification impact design validation for automotive applications?

AEC-Q101 qualification confirms compliance with stress tests including HTGB, HTRB, TC, and UIS-validating suitability for automotive under-hood environments. It eliminates need for customer-level requalification in OBC and DC/DC modules targeting ASIL-B systems, accelerating time-to-certification by 6–9 months.

AIMZHN120R030M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 27A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 8.6mA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1738 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 326W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-14

AIMZHN120R030M1TXKSA1 FAQ

1.How can I place an order for AIMZHN120R030M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZHN120R030M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZHN120R030M1TXKSA1 reliable?

The price and inventory of AIMZHN120R030M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZHN120R030M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZHN120R030M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZHN120R030M1TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZHN120R030M1TXKSA1?

AIMZHN120R030M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZHN120R030M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZHN120R030M1TXKSA1?

For technical support, including AIMZHN120R030M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZHN120R030M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZHN120R030M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZHN120R030M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZHN120R030M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZHN120R030M1TXKSA1?

All AIMZHN120R030M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZHN120R030M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZHN120R030M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZHN120R030M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…