Infineon Technologies AIMZHN120R120M1TXKSA1

Overview

AIMZHN120R120M1TXKSA1 from Infineon is a 1200 V, 22 A CoolSiC™ silicon carbide trench MOSFET in PG-TO247-4-U05 package with Kelvin source (4-pin), optimized for high-voltage automotive on-board chargers and DC/DC converters. It features R_DS(on) = 117–234 mΩ (25–175°C), V_GS(th) = 3.7–5.1 V, C_iss = 458 pF, E_on/E_off = 44/36 µJ at 800 V, and AEC-Q101 qualification.

For engineers reviewing the AIMZHN120R120M1TXKSA1 datasheet, AIMZHN120R120M1TXKSA1 pinout, AIMZHN120R120M1TXKSA1 application, or AIMZHN120R120M1TXKSA1 equivalent, key selection criteria include unipolar gate drive compatibility (V_GS(on) = 20 V), low Crss/Ciss ratio (0.0022), sense-pin-enabled switching optimization, and HV creepage ≥7.07 mm for 1200 V systems.

Technical Context

This SiC MOSFET employs Gen1p trench technology with XT die attach for enhanced thermal resistance (R_th(j-c) = 0.87–1.13 K/W) and reduced switching losses. Its high V_GS(th) (min 3.7 V) and ultra-low Crss (1 pF) suppress parasitic turn-on under high dv/dt, enabling robust unipolar gate driving without negative bias.

The 4-pin configuration separates power and Kelvin source paths to eliminate source inductance impact on gate control, while low total gate charge (Q_Gtot = 18 nC) and fast switching (t_d(on) = 7 ns, t_f = 17 ns) support >100 kHz operation in high-density power stages.

Key Specifications

Pinout & Package

Package: PG-TO247-4-U05 - 4-pin through-hole package with isolated Kelvin source terminal, optimized for low-inductance high-frequency switching and thermal performance via XT die attach.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with IXFN120N120T2 and C3M0120120K, AIMZHN120R120M1TXKSA1 delivers superior dv/dt immunity (Crss/Ciss = 0.0022), tighter V_GS(th) distribution (3.7–5.1 V), and AEC-Q101 validation-making it optimal for automotive OBCs where reliability and unipolar drive simplicity are mandatory.

Availability

AIMZHN120R120M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and auxiliary traction inverters requiring stable component supply across automotive production lifecycles.

Supply support for AIMZHN120R120M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolSiC™ 1200 V trench MOSFET product line, engineered specifically for automotive and industrial high-efficiency, high-power-density systems operating above 600 V DC bus.

FAQ

What gate drive voltage is required for reliable operation?

AIMZHN120R120M1TXKSA1 requires V_GS(on) = 20 V and V_GS(off) = 0 V per Infineon's recommended values. This unipolar drive leverages its high V_GS(th) (3.7–5.1 V) and low Crss to prevent parasitic turn-on. Using <18 V increases R_DS(on) by up to 8% at 100°C, raising conduction loss and thermal stress.

Does this MOSFET include an integrated body diode, and how does it perform?

Yes-it features a monolithic SiC body diode with V_SD = 3.9 V at 7 A (25°C) and Q_fr = 132 nC. Unlike silicon diodes, it exhibits no reverse recovery tail, enabling efficient synchronous rectification in DAB converters. Its soft reverse recovery reduces EMI and eliminates snubber requirements in hard-switched topologies.

How is the Kelvin source pin used in PCB layout?

The Kelvin source (Pin 3) must be routed separately from the main source (Pin 2) to the gate driver's reference node-never tied together on the PCB. This isolates gate control from power-loop voltage drop, ensuring accurate V_GS regulation during high di/dt events. A dedicated low-inductance trace <5 mm long is recommended between Pin 3 and driver ground.

Is this part qualified for automotive use, and what standards apply?

Yes-AIMZHN120R120M1TXKSA1 is fully qualified per AEC-Q101 for discrete semiconductors, including stress tests for temperature cycling (−40 to 150°C), humidity, and mechanical shock. It meets Grade 0 (−40 to 175°C junction) requirements and supports functional safety development per ISO 26262 ASIL-B in OBC and DC/DC applications.