Infineon Technologies AIMZHN120R160M1TXKSA1

Overview

AIMZHN120R160M1TXKSA1 from Infineon is a 1200 V, 17 A CoolSiC™ Gen1p silicon carbide trench MOSFET in PG-TO247-4-U05 package with Kelvin source (4-pin), featuring R_DS(on) = 160 mΩ at V_GS = 20 V and T_vj = 25°C, 1.5 µs short-circuit withstand time, and 7.07 mm minimum creepage distance for high-voltage isolation. It serves as a primary switching device in automotive on-board chargers and DC/DC converters operating up to 175°C junction temperature.

For engineers reviewing the AIMZHN120R160M1TXKSA1 datasheet, AIMZHN120R160M1TXKSA1 pinout, AIMZHN120R160M1TXKSA1 application, or AIMZHN120R160M1TXKSA1 equivalent, key selection criteria include its 20 V recommended gate turn-on voltage, low C_rss/C_iss ratio for parasitic turn-on immunity, sense-pin-enabled optimized switching, and AEC-Q101 qualification for automotive power systems.

Technical Context

This SiC MOSFET employs Infineon's Gen1p trench technology with .XT die attach for enhanced thermal resistance (R_th(j–c) = 1.05 K/W typ.) and uses a dedicated Kelvin source terminal to eliminate source inductance impact on gate control loop stability. Its high V_GS(th) (3.7–5.1 V) and ultra-low Crss (1 pF) enable robust unipolar gate driving without external Miller clamping.

The device delivers best-in-class switching energy (E_on = 33 µJ, E_off = 37 µJ at 800 V/5 A), supported by minimal total gate charge (Q_Gtot = 14 nC) and fast switching times (t_d(on) = 7 ns, t_f = 27 ns), enabling >100 kHz operation in high-density HV power stages while maintaining AEC-Q101 compliance.

Key Specifications

Pinout & Package

Package: PG-TO247-4-U05 - 4-terminal through-hole package with isolated Kelvin source pin for accurate gate-source voltage control and minimized source inductance effects during high-di/dt switching.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0160120K and STP160N120HF5, AIMZHN120R160M1TXKSA1 uniquely combines Kelvin source, lowest Crss/Ciss ratio (0.0029), and AEC-Q101 validation - making it optimal for space-constrained, high-reliability automotive power conversion where gate loop stability and transient robustness are non-negotiable.

Availability

AIMZHN120R160M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and automotive auxiliary drives requiring stable component supply across extended product lifecycles.

Supply support for AIMZHN120R160M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in automotive and industrial power electronics.

This device belongs to Infineon's CoolSiC™ Gen1p family, engineered specifically for high-efficiency, high-power-density EV powertrain subsystems requiring AEC-Q101 reliability and 175°C continuous operation.

FAQ

What gate drive voltage is required for reliable operation?

AIMZHN120R160M1TXKSA1 requires a 0 V to 20 V unipolar gate drive. The datasheet specifies 20 V as the recommended turn-on voltage to achieve rated R_DS(on) and ensure long-term gate oxide reliability; using 15 V or 18 V increases R_DS(on) by 8–15% and reduces short-circuit withstand time. Negative turn-off is not required due to high V_GS(th) and low Crss.

How does the Kelvin source pin improve switching performance?

The Kelvin source pin provides a dedicated low-current return path for the gate driver, isolating the gate control loop from main source inductance. This eliminates voltage spikes induced by di/dt across source bond wires during switching, preventing false turn-off and enabling precise V_GS regulation - essential for ZVS operation and minimizing E_on/E_off variation across temperature.

Is this MOSFET suitable for hard-switched topologies?

Yes - AIMZHN120R160M1TXKSA1 is characterized for hard-switched operation up to 800 V DC-link with verified E_on = 33 µJ and E_off = 37 µJ at 5 A. Its low C_oss (20 pF) and fast fall time (27 ns) reduce capacitive turn-off loss, while the 1.5 µs short-circuit rating supports robust protection in non-resonant converters like two-level inverters and buck-derived topologies.

What thermal interface material is recommended for PG-TO247-4-U05 mounting?

Infineon recommends thermally conductive epoxy or solder-based die attach for the .XT interface, paired with 0.1–0.2 mm thickness thermal interface material (TIM) such as Henkel ECCOBOND® G110 or Parker Chomerics THERM-A-GAP® G300 between case and heatsink. Minimum thermal resistance target is 0.3 K·cm²/W at interface to achieve R_th(j–c) = 1.05 K/W under actual mounting pressure (≥200 psi).