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Home > Products > Discrete Semiconductor Products > Power Driver Modules

Alpha & Omega Semiconductor Inc. AOZ5049QI_3

Name: AOZ5049QI_3
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOZ5049QI_3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOZ5049QI_3

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: Power Driver Modules

Package:: 24-PowerLFQFN Module

Datasheet:: AOZ5049QI_3.pdf

Description:: MOD SYNC BUCK POWER STAGE 30A

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOZ5049QI from Alpha & Omega Semiconductor is a high-current DrMOS power module integrating asymmetrical HS/LS MOSFETs and a gate driver in a single 3.5mm × 5mm QFN-24L package. It delivers up to 35A output current, supports 4.5V–25V input, operates up to 2MHz, and features integrated bootstrap Schottky diode and tri-state FCCM/PWM inputs for IMVP8-compliant VRMs in server and notebook CPU power delivery.

For engineers reviewing the AOZ5049QI datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal resistance (R_θJC = 3°C/W), dead-time timing (t_PDHU = 20ns), UVLO threshold (3.4V), and diode-emulation control logic - all critical for high-frequency buck converter design and layout optimization.

Technical Context

The AOZ5049QI implements an adaptive shoot-through protection scheme that monitors VSWH and gate voltage transitions to enforce minimum dead time while preventing cross-conduction. Its dual-rail architecture separates VIN (4.5–25V) and VCC (4.5–5.5V) supplies, enabling independent optimization of power-stage switching and gate-drive integrity.

Control logic integrates tri-state-compatible PWM and FCCM inputs with defined thresholds (VPWM_H = 4.1V, VFCCM_L = 1.2V) and propagation delays (t_PDLU = 18ns, t_TSSHD = 175ns). Diode emulation mode is activated when FCCM is held low, allowing asynchronous operation during light-load or pre-bias conditions without external circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
Output Current	Up to 35A continuous - enables single-module CPU core rail solutions in space-constrained VRMs.
Input Voltage Range	VIN = 4.5V to 25V - supports wide-input server and notebook power architectures including 12V and 19V intermediate buses.
Switching Frequency	200kHz to 2MHz - allows high-density point-of-load designs with small inductors and reduced output capacitance.
Thermal Resistance	R_θJC = 3°C/W - enables efficient heat transfer from junction to exposed pad, critical for sustained 35A operation.
UVLO Threshold	VCC rising = 3.4V with 500mV hysteresis - ensures reliable startup and prevents erratic gate drive under brown-out conditions.
Dead Time	t_PDHU = 20ns (GH→GL), t_PDHL = 20ns (VSWH→GL) - minimizes conduction overlap while maintaining robust shoot-through immunity.
Bootstrap Supply	Integrated Schottky diode - eliminates external bootstrap diode, reducing BOM count and PCB area in high-frequency designs.
Package	3.5mm × 5mm QFN-24L with exposed VIN/PGND pads - optimized for low-inductance routing and thermal dissipation in multi-layer VRM layouts.

Pinout & Package

AOZ5049QI uses a 3.5mm × 5mm QFN-24L package with dual exposed thermal pads (VIN and PGND) and optimized pin arrangement for minimal loop inductance. Pin 1 is marked by dot; top-view orientation follows standard QFN convention.

Pin/Terminal	Circuit Role	Design Meaning
PWM	Primary control input	TTL/5V-compatible logic signal; tri-state capable - enables controller-initiated shutdown without external pull-downs.
FCCM	Mode selection input	High = CCM, Low = diode emulation, Hi-Z = shutdown - provides single-pin configurability for light-load efficiency and safe startup sequencing.
BOOT	HS gate driver supply	Connects to VSWH via 100nF ceramic capacitor - forms self-contained bootstrap rail for floating HS gate drive.
GH	HS MOSFET gate	Internal gate driver output - not for external probing; designed for direct internal connection to minimize gate loop inductance.
VSWH	Switch node	Source of HS MOSFET / drain of LS MOSFET; used for ZCD, UVLO sensing, and BOOT capacitor return - requires minimal copper area to suppress dV/dt noise.
VIN (Pins 6,7,8,22)	High-voltage input	Dedicated power input pins adjacent to PGND - enables low-impedance, low-inductance connection to input bulk capacitors.
PGND (Pins 9–12,17,18,21)	Power ground	Multiple dedicated ground terminals including LS gate driver return - reduces ground bounce and improves EMI performance.
VCC	Driver bias supply	5V rail for internal logic and LS gate driver - requires 2.2µF MLCC directly to PGND (Pin 21) for stable gate drive under fast load transients.
GL	LS MOSFET gate	Complementary gate driver output - internally optimized for ultra-low R_DS(ON) conduction and fast turn-off (t_PDLL = 25ns).

Key Features

Feature	Design Value
Asymmetrical MOSFET optimization	HS MOSFET: low Q_g and C_iss for fast switching at low duty cycle; LS MOSFET: ultra-low R_DS(ON) to minimize conduction loss - maximizes efficiency across full load range.
Integrated bootstrap Schottky diode	Eliminates external diode component and associated parasitic inductance - improves reliability and simplifies layout for >1MHz operation.
Tri-state compatible control inputs	PWM and FCCM accept high-impedance states with defined hold-off delay (175ns) - enables seamless integration with digital controllers supporting PS4/PS0 state transitions.
Adaptive dead-time control	Monitors VSWH and gate voltage edges to dynamically adjust turn-on timing - prevents shoot-through under transient and abnormal operating conditions without fixed timing penalties.
IMVP8 form-fit-function compliance	Pinout, timing, and electrical behavior match Intel IMVP8 specification - allows drop-in replacement in existing VRM designs targeting Core i7/i9 and Xeon processors.

Applications

Server CPU VRMs	Notebook Processor Power
Use Scenario: High-current, multi-phase buck converters delivering 1V/30A+ to dual-socket Xeon Scalable processors in 1U rack servers. IC Role / Device Role / Timing Role: DrMOS power stage providing synchronous rectification, gate drive, and bootstrap generation per phase - replaces discrete HS/LS MOSFET + driver combinations. Use Value: Enables compact, thermally efficient 2MHz operation with <3°C/W junction-to-case thermal resistance, reducing total solution size by 35% versus discrete alternatives.	Use Scenario: Thin-and-light notebook platforms requiring high-efficiency, low-noise CPU core voltage regulation with dynamic frequency scaling. IC Role / Device Role / Timing Role: Single-chip power stage executing PWM-to-gate timing with <25ns propagation delay and adaptive dead-time control - supports rapid load transient response (<1µs) for Turbo Boost events. Use Value: Integrated diode-emulation mode (via FCCM pin) extends light-load efficiency by >8% at 1A, extending battery runtime without adding control complexity.
Graphics Card VRMs	Memory Module PDNs
Use Scenario: GPU power delivery on PCIe add-in cards where EMI and thermal density constrain discrete MOSFET placement. IC Role / Device Role / Timing Role: High-current DrMOS stage operating at 1.5MHz with minimized VSWH loop area - functions as switching node interface between input caps and output inductor. Use Value: Optimized 3.5mm × 5mm QFN pinout reduces primary switching loop area by 60%, cutting radiated emissions below CISPR 22 Class B limits without shielding.	Use Scenario: DDR5 memory modules requiring tightly regulated 1.1V supply with fast transient response to burst data access patterns. IC Role / Device Role / Timing Role: Point-of-load regulator stage converting 5V or 12V intermediate bus to memory core voltage - leverages tri-state PWM for coordinated power-down across multiple DIMMs. Use Value: Single-pin FCCM control enables synchronized diode-emulation across all memory VRMs, reducing idle power by 42% versus forced CCM operation.

Server CPU VRMs

Notebook Processor Power

Use Scenario: High-current, multi-phase buck converters delivering 1V/30A+ to dual-socket Xeon Scalable processors in 1U rack servers.

IC Role / Device Role / Timing Role: DrMOS power stage providing synchronous rectification, gate drive, and bootstrap generation per phase - replaces discrete HS/LS MOSFET + driver combinations.

Use Value: Enables compact, thermally efficient 2MHz operation with <3°C/W junction-to-case thermal resistance, reducing total solution size by 35% versus discrete alternatives.

Use Scenario: Thin-and-light notebook platforms requiring high-efficiency, low-noise CPU core voltage regulation with dynamic frequency scaling.

IC Role / Device Role / Timing Role: Single-chip power stage executing PWM-to-gate timing with <25ns propagation delay and adaptive dead-time control - supports rapid load transient response (<1µs) for Turbo Boost events.

Use Value: Integrated diode-emulation mode (via FCCM pin) extends light-load efficiency by >8% at 1A, extending battery runtime without adding control complexity.

Graphics Card VRMs

Memory Module PDNs

Use Scenario: GPU power delivery on PCIe add-in cards where EMI and thermal density constrain discrete MOSFET placement.

IC Role / Device Role / Timing Role: High-current DrMOS stage operating at 1.5MHz with minimized VSWH loop area - functions as switching node interface between input caps and output inductor.

Use Value: Optimized 3.5mm × 5mm QFN pinout reduces primary switching loop area by 60%, cutting radiated emissions below CISPR 22 Class B limits without shielding.

Use Scenario: DDR5 memory modules requiring tightly regulated 1.1V supply with fast transient response to burst data access patterns.

IC Role / Device Role / Timing Role: Point-of-load regulator stage converting 5V or 12V intermediate bus to memory core voltage - leverages tri-state PWM for coordinated power-down across multiple DIMMs.

Use Value: Single-pin FCCM control enables synchronized diode-emulation across all memory VRMs, reducing idle power by 42% versus forced CCM operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DrMOS power stage applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AOZ5048QI	Direct replacement with identical pinout, same R_θJC, but improved 30ns faster GH turn-off (t_PDLU = 15ns vs. 18ns) and lower 2.8°C/W R_θJC.	Same IMVP8 compliance and VRM use cases; preferred for new designs requiring marginally higher efficiency at 2MHz.	Select AOZ5048QI for new designs; AOZ5049QI remains valid for legacy production and cost-sensitive builds where 3°C/W thermal resistance is acceptable.
IR35201MTRPBF	QFN-40 package, 40A rating, supports 3.3V VCC, includes integrated current sense amplifier and PMBus interface - adds telemetry but increases layout complexity.	Targeted at enterprise server VRMs requiring real-time current monitoring and digital power management, not basic analog PWM control.	Choose IR35201MTRPBF only when PMBus telemetry and >35A capability are required; AOZ5049QI offers simpler analog integration and lower BOM cost for standard IMVP8 systems.

Compared with AOZ5048QI, the AOZ5049QI trades 0.2°C/W higher thermal resistance and slightly slower gate timing for proven field reliability in volume server deployments; versus IR35201MTRPBF, it eliminates PMBus overhead and reduces PCB layer count by omitting current-sense routing and digital interface traces.

Availability

AOZ5049QI is available at Aetrix Electronics and suitable for server CPU VRMs, notebook processor power delivery, and graphics card point-of-load converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.

Supply support for AOZ5049QI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and integrated power stages for computing, consumer, and industrial markets.

The AOZ5049QI belongs to AOS's DrMOS product line, engineered specifically for Intel IMVP8-compliant voltage regulator modules in high-performance computing platforms where efficiency, thermal density, and layout simplicity are critical.

FAQ

What is the maximum recommended operating frequency for AOZ5049QI?

The AOZ5049QI is characterized and specified for continuous operation up to 2MHz. Electrical parameters including gate timing (t_PDLU, t_PDLL) and thermal resistance (R_θJC = 3°C/W) are validated across the full 200kHz–2MHz range. Operation beyond 2MHz is not guaranteed and may compromise shoot-through immunity or thermal performance without additional derating.

Does AOZ5049QI require an external bootstrap diode?

No, AOZ5049QI integrates a bootstrap Schottky diode internally. The BOOT pin connects directly to the VSWH switching node via a 100nF ceramic capacitor; no external diode is needed. This integration reduces component count, PCB area, and parasitic inductance - critical for stable 2MHz operation and EMI reduction.

How does the FCCM pin control diode emulation mode in AOZ5049QI?

When the FCCM pin is driven low (≤1.2V), the AOZ5049QI activates diode emulation mode for the LS MOSFET while maintaining normal HS switching - enabling asynchronous operation during light-load or pre-bias conditions. A high-impedance FCCM input shuts down both MOSFETs; a high input (≥3.8V) enables standard CCM operation.

What is the purpose of the multiple VIN and PGND pins on AOZ5049QI?

The AOZ5049QI allocates four VIN pins (6,7,8,22) and eight PGND pins (9–12,17,18,21) to minimize power-loop inductance and improve thermal spreading. This layout reduces voltage spikes during high di/dt switching, lowers ground bounce in multi-phase systems, and enhances heat transfer from the exposed VIN/PGND thermal pads into the PCB copper planes.

Is AOZ5049QI pin-compatible with AOZ5048QI?

Yes, AOZ5049QI and AOZ5048QI share identical 3.5mm × 5mm QFN-24L package dimensions, pinout, and IMVP8 electrical interface. AOZ5048QI is explicitly designated as the replacement product in AOS documentation, offering improved thermal resistance (2.8°C/W vs. 3°C/W) and faster gate timing while maintaining full mechanical and functional compatibility.

AOZ5049QI_3 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 24-PowerLFQFN Module

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Type:: MOSFET

Configuration:: 1 Phase

Current:: 35 A

Voltage:: -

Voltage - Isolation:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

AOZ5049QI_3 FAQ

1.How can I place an order for AOZ5049QI_3 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOZ5049QI_3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOZ5049QI_3 reliable?

The price and inventory of AOZ5049QI_3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOZ5049QI_3 is usually 5 days.

3.What payment methods are accepted for AOZ5049QI_3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOZ5049QI_3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOZ5049QI_3?

AOZ5049QI_3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOZ5049QI_3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOZ5049QI_3?

For technical support, including AOZ5049QI_3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOZ5049QI_3 requirements.

6.How does Aetrix verify that AOZ5049QI_3 is sourced from the original manufacturer or authorized distributors?

All AOZ5049QI_3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOZ5049QI_3 meets industry standards.

7.What is the process for return or replacement of AOZ5049QI_3?

All AOZ5049QI_3 units undergo pre-shipment inspection (PSI). If there is an issue with AOZ5049QI_3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOZ5049QI_3 part is unused and in its original packaging.

Return procedure for AOZ5049QI_3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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