Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AOZ5311NQI_1

Part No.:
AOZ5311NQI_1
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
Power Driver Modules
Package:
31-PowerVFQFN Module
Datasheet:
AetrixAOZ5311NQI_1.pdf
Description:
IC POWER STAGE MOD BUCK QFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,845

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AOZ5311NQI from Alpha and Omega Semiconductor is a high-current DrMOS power module integrating asymmetrical high-side and low-side MOSFETs with an on-die gate driver for synchronous buck conversion. It delivers 55A continuous output, supports up to 2MHz switching, operates from 2.5V–20V input, and features diode emulation mode via SMOD# for light-load efficiency in VRMs and point-of-load converters.

For engineers reviewing the AOZ5311NQI datasheet, pinout, applications, or equivalent options, key selection criteria include its QFN5x5-31L package with optimized VSWH/PGND/VIN layout for low parasitics, Tri-State PWM compatibility, <1mV ZCD threshold for precise zero-cross detection, and thermal warning (THWN) output at 150°C junction temperature.

Technical Context

The AOZ5311NQI implements a dual-MOSFET synchronous buck stage with independently optimized devices: the high-side MOSFET minimizes gate charge and capacitance for fast low-duty-cycle switching, while the low-side MOSFET achieves ultra-low RDS(on) to reduce conduction loss. Its integrated driver includes bootstrap switch, anti-overlap logic, and ZCD sensing referenced to VSWH.

Control architecture supports 3V/5V CMOS PWM inputs with Tri-State capability, SMOD#-enabled diode emulation for DCM operation, and DISB#-controlled disable with sub-1µA quiescent current. Thermal monitoring uses an open-drain THWN output asserting at 150°C with 30°C hysteresis, and UVLO triggers at 3.5V on VCC.

Key Specifications

Parameter Value and Actual Design Meaning
Continuous Output Current 55A - sustains full load without derating under typical thermal conditions on recommended PCB layout.
Peak Pulse Current 120A for 10µs - supports transient load demands in CPU/GPU VRMs without saturation or SOA violation.
Switching Frequency Up to 2MHz - enables compact magnetics and high-density POL designs while maintaining >90% efficiency at 300kHz–500kHz.
ZCD Threshold <1mV - enables accurate zero-current detection for seamless transition into diode emulation mode at light loads.
UVLO Threshold 3.5V (rising) - ensures stable startup only after VCC bias rail reaches functional level, preventing erratic gate drive.
Thermal Warning Threshold 150°C junction - provides early overtemperature flag before thermal shutdown, allowing system-level mitigation.
Package Thermal Resistance RθJC = 2.5°C/W - measured at high-side MOSFET die, enabling direct heatsink coupling via exposed VIN pad.

Pinout & Package

AOZ5311NQI uses a low-profile 5mm × 5mm QFN-31L package with exposed thermal pads for VIN and PGND. Pin layout is optimized for minimal loop inductance: VIN (pins 8–11), PGND (pins 4, 12–15, 28, 32), and 11 parallel VSWH terminals (pins 16–26) provide robust high-current switching node connection.

Pin/Terminal Circuit Role Design Meaning
PWM Controller-to-driver command interface Accepts 3V/5V CMOS logic; Tri-State window (1.35–2.1V) disables both gates when floating or in high-Z state.
SMOD# Mode select control input Pull-low enables diode emulation for DCM operation; internal 850kΩ pull-down ensures default CCM if unconnected.
VCC Bias supply for logic blocks 4.5–5.5V required; 1µF MLCC to AGND mandatory for noise immunity and UVLO stability.
BOOT / PHASE High-side gate drive bootstrap network BOOT (pin 5) connects to 100nF ceramic cap; PHASE (pin 7) is AC return path-critical for reliable high-side turn-on.
VIN (pins 8–11) High-voltage DC input terminal Parallel connection reduces resistance and inductance; must be decoupled with X7R/X5R ceramics placed adjacent to pins.
PGND (pins 4,12–15,28,32) Power ground reference Multiple dedicated pins minimize ground bounce; 1µF MLCC required between PVCC (pin 29) and PGND (pin 28).
VSWH (pins 16–26) Switching node / ZCD sense point 11 parallel pins carry full inductor current and feed ZCD circuitry; low-inductance routing essential for EMI and diode emulation accuracy.
THWN Open-drain thermal warning output Pulled low at 150°C junction; reset at 120°C; requires external pull-up to VCC for system monitoring.
DISB# Global enable/disable control Pull-low disables all gate drivers; internal 850kΩ pull-down ensures safe default-off state during power sequencing.

Key Features

Feature Design Value
Integrated bootstrap switch Eliminates external diode and reduces BOM count while maintaining reliable high-side gate drive across duty cycles.
Diode emulation mode Enables discontinuous conduction (DCM) via SMOD# to reduce light-load losses without requiring external freewheeling diode.
Ultra-low ZCD threshold <1mV detection enables precise zero-current crossing for optimal timing of low-side turn-off in DCM, minimizing reverse conduction loss.
Optimized pinout for low parasitics VIN/PGND adjacency and 11-VSWH parallelism minimize switching loop inductance, reducing voltage spikes and EMI in 2MHz operation.
Thermal warning with hysteresis THWN asserts at 150°C and clears at 120°C, giving system firmware 30°C margin to throttle load or initiate cooling before thermal shutdown.

Applications

Memory and Graphic Cards VRMs for Motherboards

Use Scenario: High-transient current delivery to GPU memory subsystems requiring rapid response to burst workloads.

IC Role / Device Role / Timing Role: Primary synchronous buck power stage delivering regulated 1.2V/50A+ with sub-100ns deadtime control and ZCD-based diode emulation.

Use Value: 55A continuous + 120A pulse capability meets GPU memory peak demand; low RDS(on) low-side MOSFET minimizes conduction loss at high DC current.

Use Scenario: Core voltage regulation for desktop/server CPUs with dynamic VID scaling and multi-phase coordination.

IC Role / Device Role / Timing Role: Single-phase DrMOS stage controlled by digital PWM controller; supports Tri-State for phase shedding and SMOD# for adaptive light-load efficiency.

Use Value: 2MHz switching enables small inductors; QFN5x5-31L footprint allows dense multi-phase layouts; THWN output feeds system thermal management firmware.

Point of Load DC/DC Converters Video Gaming Console

Use Scenario: Compact, high-efficiency 12V-to-1V conversion for ASIC/FPGA core rails in space-constrained embedded systems.

IC Role / Device Role / Timing Role: Integrated power stage replacing discrete MOSFETs + driver; handles full gate drive, bootstrapping, and ZCD sensing internally.

Use Value: Eliminates 6+ external components per phase; RθJC = 2.5°C/W enables direct thermal coupling to heatsink; 2.5V–20V input range supports varied system bus voltages.

Use Scenario: Power delivery to SoC and GPU in thermally constrained handheld or console platforms with aggressive acoustic/thermal targets.

IC Role / Device Role / Timing Role: High-density POL regulator operating in CCM/DCM hybrid mode; uses SMOD# to enter diode emulation during idle periods.

Use Value: <1mV ZCD threshold ensures smooth DCM entry/exit; low-profile QFN5x5 package fits under metal shields; THWN flag enables dynamic frequency scaling to manage junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DrMOS power stage applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon TDA21472 60A continuous, 5V-only PWM input, no Tri-State support, higher RDS(on) low-side (0.95mΩ vs. 0.75mΩ) Lacks diode emulation mode and 3V logic compatibility; requires external bootstrap diode Preferred where 5V-only control and higher current margin outweigh flexibility trade-offs
ON Semiconductor ISL99390 50A continuous, 3.3V/5V PWM compatible, integrated current sense, no THWN output Includes current reporting but omits thermal warning pin and ZCD-based DCM optimization Selected when real-time current telemetry is prioritized over thermal fault visibility and light-load efficiency tuning

Compared with AOZ5311NQI, the TDA21472 offers higher current rating but sacrifices Tri-State PWM and diode emulation flexibility, while the ISL99390 adds current sensing at the cost of thermal warning functionality and lower pulse current headroom-making AOZ5311NQI optimal for thermally aware, high-transient VRM designs requiring adaptive light-load behavior.

Availability

AOZ5311NQI is available at Aetrix Electronics and suitable for memory modules, motherboard VRMs, and point-of-load DC/DC converters requiring stable component supply, high-current density, and production-ready thermal management.

Supply support for AOZ5311NQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha and Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and integrated power stages for computing, consumer, and industrial markets.

The AOZ5311NQI belongs to AOS's DrMOS product line, engineered specifically for high-frequency, high-current synchronous buck conversion in CPU/GPU voltage regulator modules where thermal performance, layout simplicity, and adaptive light-load efficiency are critical.

FAQ

What is the maximum allowable input voltage for AOZ5311NQI?

The AOZ5311NQI supports a recommended operating input voltage range of 2.5V to 20V. Its absolute maximum rating for VIN is 25V for transient conditions (≤20ns), but sustained operation above 20V risks exceeding SOA limits and thermal derating. Always verify layout decoupling and thermal design when operating near the upper limit.

How does AOZ5311NQI implement diode emulation mode?

AOZ5311NQI enters diode emulation mode when SMOD# is pulled low, enabling Discontinuous Conduction Mode (DCM). In this state, the low-side MOSFET is actively controlled to emulate freewheeling diode behavior using <1mV ZCD detection at the VSWH node, eliminating reverse conduction loss while maintaining synchronous control precision.

What is the purpose of the THWN pin on AOZ5311NQI?

The THWN pin on AOZ5311NQI is an open-drain thermal warning output that pulls low when the driver IC junction temperature reaches 150°C. It remains asserted until temperature drops to 120°C (30°C hysteresis), providing actionable early-warning feedback to system controllers without triggering shutdown-enabling proactive thermal throttling for AOZ5311NQI.

Can AOZ5311NQI operate with a 3V PWM signal?

Yes, AOZ5311NQI is fully compatible with 3V CMOS logic PWM inputs. Its VPWM_H threshold is guaranteed ≥2.7V and VPWM_L ≤0.72V across temperature, ensuring robust recognition of 3V logic levels. The Tri-State window (1.35–2.1V) further guarantees safe high-impedance interpretation when PWM is disconnected or floating.

What is the recommended capacitor for the BOOT-PHASE connection in AOZ5311NQI?

A 100nF ceramic capacitor is recommended between BOOT (pin 5) and PHASE (pin 7) for AOZ5311NQI. This capacitor must be placed as close as possible to the pins to minimize loop inductance; X7R or X5R dielectrics are preferred for stable capacitance under bias and temperature. Avoid tantalum or electrolytic types due to ESR and reliability concerns.

AOZ5311NQI_1 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
31-PowerVFQFN Module
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
MOSFET
Configuration:
1 Phase
Current:
50 A
Voltage:
-
Voltage - Isolation:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount

AOZ5311NQI_1 FAQ

1.How can I place an order for AOZ5311NQI_1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOZ5311NQI_1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOZ5311NQI_1 reliable?

The price and inventory of AOZ5311NQI_1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOZ5311NQI_1 is usually 5 days.

3.What payment methods are accepted for AOZ5311NQI_1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOZ5311NQI_1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOZ5311NQI_1?

AOZ5311NQI_1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOZ5311NQI_1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOZ5311NQI_1?

For technical support, including AOZ5311NQI_1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOZ5311NQI_1 requirements.

6.How does Aetrix verify that AOZ5311NQI_1 is sourced from the original manufacturer or authorized distributors?

All AOZ5311NQI_1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOZ5311NQI_1 meets industry standards.

7.What is the process for return or replacement of AOZ5311NQI_1?

All AOZ5311NQI_1 units undergo pre-shipment inspection (PSI). If there is an issue with AOZ5311NQI_1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOZ5311NQI_1 part is unused and in its original packaging.

Return procedure for AOZ5311NQI_1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AOZ5311NQI_1 Tags

  • AOZ5311NQI_1
  • AOZ5311NQI_1 PDF
  • AOZ5311NQI_1 Datasheet
  • AOZ5311NQI_1 Specifications
  • AOZ5311NQI_1 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AOZ5311NQI_1
  • Buy AOZ5311NQI_1
  • AOZ5311NQI_1 Price
  • AOZ5311NQI_1 Distributor
  • AOZ5311NQI_1 Supplier
  • AOZ5311NQI_1 Wholesale
Related Products
IGCM15F60GAXKMA1
IGCM15F60GAXKMA1

Infineon Technologies

FSBB30CH60C
FSBB30CH60C

onsemi

LMG3522R030RQSR
LMG3522R030RQSR

Texas Instruments

LMG3522R030QRQSTQ1
LMG3522R030QRQSTQ1

Texas Instruments

IM828XCCXKMA1
IM828XCCXKMA1

Infineon Technologies

2SP0430T2A0C-FF1800R17IP5
2SP0430T2A0C-FF1800R17IP5

Power Integrations

FBS-GAM02-P-C50
FBS-GAM02-P-C50

EPC Space, LLC

AOZ5507QI_2
AOZ5507QI_2

Alpha & Omega Semiconductor Inc.

AOZ5517QI_2
AOZ5517QI_2

Alpha & Omega Semiconductor Inc.

NV6117-RA
NV6117-RA

Navitas Semiconductor, Inc.

FDMF5062
FDMF5062

onsemi

NV6127
NV6127

Navitas Semiconductor, Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER