Microchip Technology APT2X151DL60J
- Part No.:
- APT2X151DL60J
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- SOT-227-4, miniBLOC
- Datasheet:
-
APT2X151DL60J.pdf
- Description:
- DIODE MODULE GP 600V 150A ISOTOP
- Quantity:
- Payment:

- Shipping:

Inventory:9,980
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Product details
Overview
APT2X151DL60J from Microsemi is an ultrafast soft-recovery dual anti-parallel rectifier diode rated for 600 V blocking and 150 A average forward current at TC = 40°C, with 408 ns reverse recovery time (IF = 150 A, diF/dt = −200 A/μs, VR = 400 V, TC = 25°C), used in high-frequency motor controllers and IGBT snubber networks.
For engineers reviewing the APT2X151DL60J datasheet, APT2X151DL60J pinout, APT2X151DL60J application, or APT2X151DL60J equivalent, key selection criteria include reverse recovery charge (2387 nC at 25°C), junction-to-case thermal resistance (0.56 °C/W), low forward voltage (1.25–1.6 V at 150 A), and ISOTOP® SOT-227 package compatibility with forced-air or liquid-cooled heatsinks.
Technical Context
This dual-diode module integrates two independent ultrafast rectifiers in anti-parallel configuration, enabling bidirectional current handling without external pairing. Its soft recovery waveform minimizes EMI in high-dV/dt switching environments such as IGBT-based inverters and induction heating systems.
The device operates across −55°C to +175°C junction temperature range and supports high diF/dt stress up to −1000 A/μs, with reverse recovery time dropping to 299 ns at TJ = 125°C under identical test conditions-enabling stable operation in thermally demanding industrial power converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR / VRRM | 600 V DC / peak repetitive reverse voltage - supports 400 V DC bus designs with 50% safety margin |
| IF(AV) | 150 A at TC = 40°C, 50% duty - enables continuous conduction in 100 kW motor drives with standard heatsinking |
| trr (25°C) | 408 ns at IF = 150 A, diF/dt = −200 A/μs - reduces switching losses vs. standard fast recovery diodes in 10–20 kHz inverters |
| Qrr | 2387 nC at 25°C - directly impacts IGBT turn-off loss and snubber sizing in hard-switched topologies |
| RθJC | 0.56 °C/W - allows 150 A conduction with ≤84°C junction rise above 85°C case temperature |
| VF | 1.25–1.6 V at IF = 150 A - determines conduction loss density and thermal footprint in compact power modules |
| IRM | 25 μA at VR = 600 V, 25°C - ensures minimal leakage in high-impedance gate drive or sensing circuits |
Pinout & Package
SOT-227 (ISOTOP®) four-terminal package with isolated mounting base, UL Recognized (File #145592), 29.2 g mass, and M4 hex nut mounting (10 lb·in torque rating). Terminals are arranged in linear 1–2–3–4 sequence with Anode 1, Cathode 1, Anode 2, Cathode 2 assignment per anti-parallel topology.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode 1 | Input terminal for first diode; connects to high-side switch node in half-bridge anti-parallel configuration |
| 2 | Cathode 1 | Output terminal for first diode; ties to common DC link or motor phase output |
| 3 | Anode 2 | Input terminal for second diode; mirrors Anode 1 polarity for complementary conduction path |
| 4 | Cathode 2 | Output terminal for second diode; electrically tied to Cathode 1 in anti-parallel layout |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | trr = 408 ns with controlled IRRM tail - suppresses voltage overshoot and ringing during IGBT commutation |
| Low VF at high current | 1.25 V @ 150 A, 25°C - cuts conduction loss by ~30% versus standard 600 V fast diodes at same rating |
| High thermal conductivity package | RθJC = 0.56 °C/W - enables direct-mount cooling without thermal interface material degradation over lifetime |
| Wide temperature operation | Junction range −55°C to +175°C - supports under-hood automotive traction inverters and industrial furnace controls |
Applications
| Motor Controllers | Inverters |
|---|---|
Use Scenario: Bidirectional regenerative braking in 3-phase AC servo drives operating at 10–16 kHz PWM frequency. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode paired with 600 V IGBTs to clamp inductive kickback and enable energy return to DC bus. Use Value: Soft recovery limits dv/dt-induced shoot-through risk while Qrr < 2400 nC reduces IGBT turn-off loss by 18% versus legacy 600 V FREDs. | Use Scenario: High-efficiency solar string inverters converting 600 V DC input to 230 V AC grid output. IC Role / Device Role / Timing Role: Output rectifier in synchronous buck-boost stage, handling bidirectional current during reactive power flow. Use Value: 0.56 °C/W RθJC permits 150 A conduction at 85°C heatsink temperature without derating, increasing power density by 22%. |
| Induction Heating | Uninterruptible Power Supply |
Use Scenario: Resonant tank rectification in 20–50 kHz solid-state induction heaters for metal forging. IC Role / Device Role / Timing Role: High-current freewheeling path during zero-voltage switching transitions of series-resonant inverters. Use Value: trr = 299 ns at 125°C ensures consistent soft recovery across full thermal range, eliminating thermal runaway in sealed enclosures. | Use Scenario: Double-conversion online UPS delivering clean 50/60 Hz sine wave output with <1% THD. IC Role / Device Role / Timing Role: Snubber diode across IGBTs in high-frequency inverter stage to absorb turn-off energy and limit voltage spikes. Use Value: Low IRM (250 μA at 125°C) prevents leakage-induced false triggering in precision gate drive circuits during standby mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast anti-parallel diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXDN150D60 | Same 600 V / 150 A rating but TO-247-4L package; trr = 350 ns (25°C), Qrr = 2100 nC; higher VF (1.75 V) | Requires PCB layout change; better suited for discrete IGBT co-packaging than module integration | Select when replacing single IGBT/diode pairs rather than dual-module anti-parallel configurations |
| Vishay VS-150APF60 | 600 V / 150 A in SOT-227; trr = 450 ns (25°C), Qrr = 2650 nC; VF = 1.55 V; RθJC = 0.62 °C/W | Near drop-in mechanical fit but higher thermal resistance increases junction temp by ~9°C at full load | Choose for cost-sensitive industrial drives where 5% efficiency penalty is acceptable |
Compared with IXDN150D60 and VS-150APF60, APT2X151DL60J delivers the lowest combined Qrr–RθJC product (1337 nC·°C/W), making it optimal for thermally constrained, high-frequency IGBT snubbing and regenerative braking where both switching loss and thermal margin are critical.
Availability
APT2X151DL60J is available at Aetrix Electronics and suitable for motor controllers, uninterruptible power supplies, induction heating systems, and high-speed rectifier applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for APT2X151DL60J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened devices, and power discretes for aerospace, defense, and industrial markets.
The APT2X151DL60J belongs to Microsemi's Advanced Power Thyristor and Diode family, engineered specifically for high-efficiency, high-reliability switching in IGBT-based motor drives and resonant power conversion systems.
FAQ
What is the maximum junction temperature rating for APT2X151DL60J?
The APT2X151DL60J has a specified operating junction temperature range of −55°C to +175°C. This wide range supports deployment in harsh environments such as under-hood automotive inverters and industrial furnace controls. The device maintains full electrical performance up to 175°C, with parameters like Qrr and trr characterized at both 25°C and 125°C to enable accurate thermal design.
Does APT2X151DL60J support anti-parallel configuration out of the box?
Yes, APT2X151DL60J is internally configured as a dual anti-parallel rectifier - terminals 1 and 2 form one diode (Anode 1 → Cathode 1), while terminals 3 and 4 form the second (Anode 2 → Cathode 2), with Cathode 1 and Cathode 2 electrically common. This eliminates external wiring for IGBT anti-parallel use and ensures matched dynamic characteristics between both legs.
How does the soft recovery characteristic of APT2X151DL60J reduce EMI in inverter designs?
The soft recovery behavior of APT2X151DL60J produces a gradual current decay during reverse recovery, limiting di/dt and associated voltage overshoot across stray inductance. Measured IRRM waveforms show no abrupt current collapse, reducing high-frequency spectral content above 30 MHz - a key factor in meeting CISPR-11 Class A conducted EMI limits in industrial motor drives without added filtering.
What is the reverse recovery charge (Qrr) of APT2X151DL60J at elevated temperature?
At TC = 25°C, Qrr is 2387 nC; at TC = 125°C, it rises to 7253 nC under identical test conditions (IF = 150 A, diF/dt = −200 A/μs, VR = 400 V). This tripling reflects increased minority carrier lifetime at high temperature and must be accounted for in IGBT turn-off loss calculations and snubber sizing for thermally demanding applications.
Can APT2X151DL60J be mounted directly to a liquid-cooled cold plate?
Yes, the APT2X151DL60J's ISOTOP® SOT-227 package features an electrically isolated copper base compatible with direct liquid-cooled mounting. With RθJC = 0.56 °C/W and UL Recognition for insulation integrity, it supports thermal interface materials or bare-copper contact to cold plates rated for 2500 V RMS isolation, enabling 150 A operation at ≤85°C coolant inlet temperature.
APT2X151DL60J Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SOT-227-4, miniBLOC
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io) (per Diode):
- 150A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 150 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 408 ns
- Current - Reverse Leakage @ Vr:
- 25 µA @ 600 V
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
APT2X151DL60J FAQ
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5.How can I obtain technical support or documentation for APT2X151DL60J?
For technical support, including APT2X151DL60J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT2X151DL60J requirements.
6.How does Aetrix verify that APT2X151DL60J is sourced from the original manufacturer or authorized distributors?
All APT2X151DL60J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT2X151DL60J meets industry standards.
7.What is the process for return or replacement of APT2X151DL60J?
All APT2X151DL60J units undergo pre-shipment inspection (PSI). If there is an issue with APT2X151DL60J, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The APT2X151DL60J part is unused and in its original packaging.
Return procedure for APT2X151DL60J:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
APT2X151DL60J Tags

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BAT54C-7-F
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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated

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BAV99LT1G
onsemi

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BAT54S,215
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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
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