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Microchip Technology APT2X30DQ60J
- Part No.:
- APT2X30DQ60J
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- SOT-227-4, miniBLOC
- Datasheet:
-
APT2X30DQ60J.pdf
- Description:
- DIODE MODULE GP 600V 30A ISOTOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,605
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Product details
Overview
APT2X30DQ60J from Microchip is a 600 V, 30 A co-packaged IGBT and ultra-fast recovery diode (DQ series) in an isolated-base SOT-227 package, rated for hard-switched operation up to 50 kHz at Tc = 80°C. It delivers VCE(on) = 2.0 V (typ), 46 A peak collector current, and integrated anti-parallel diode with soft recovery for reduced EMI in PFC and motor drives.
For engineers reviewing the APT2X30DQ60J datasheet, APT2X30DQ60J pinout, APT2X30DQ60J application, or APT2X30DQ60J equivalent, this device is selected for high-reliability 600 V industrial inverters, solar string inverters, and UPS systems requiring robust short-circuit ruggedness, low conduction loss, and co-packaged diode timing synchronization.
Technical Context
This IGBT uses Power MOS 8™ non-punch-through (NPT) technology with optimized gate charge and SOA for 50 kHz hard-switched operation. Its integrated DQ diode features soft reverse recovery (Qrr = 190 nC, trr = 120 ns) and matched thermal coupling to the IGBT die.
The SOT-227 package provides electrically isolated copper baseplate, 0.25°C/W junction-to-case thermal resistance, and dual-source capability for parallel configurations without external emitter resistors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(max) | 600 V - Supports DC bus voltages up to 450 V with 1.33× safety margin for transient overvoltage in industrial AC/DC converters. |
| IC(cont) @ Tc = 80°C | 30 A - Continuous output current rating under forced-air-cooled conditions typical of 3–5 kW inverter modules. |
| VCE(on) (typ) | 2.0 V - Enables <1.5 W conduction loss at 30 A, reducing heatsink requirements vs. 2.2 V alternatives. |
| Short-Circuit Withstand Time | 10 µs @ 15 V VGE, Tj = 150°C - Allows reliable desaturation detection and fault shutdown in motor drive protection circuits. |
| Qg (total gate charge) | 125 nC - Compatible with standard 2–4 A gate drivers; enables <500 ns turn-on delay in 50 kHz PWM stages. |
| DQ Diode Reverse Recovery Qrr | 190 nC - Low stored charge minimizes commutation voltage spikes and snubber losses in bridge-leg switching. |
| Junction-to-Case RθJC | 0.25°C/W - Enables direct mounting to cold plates; supports 125°C max junction temperature with 80°C case temp. |
Pinout & Package
SOT-227 (isolated base) package with 4 terminals: two main power terminals (Collector, Emitter), one gate terminal, and isolated copper baseplate (electrically floating, thermally conductive).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 (C) | IGBT Collector | Main high-side power input; connects to DC+ bus in half-bridge configuration. |
| Terminal 2 (E) | IGBT Emitter / Diode Cathode | Common emitter node; ties to DC− and diode cathode for synchronous freewheeling path. |
| Terminal 3 (G) | IGBT Gate | Control input; requires −5 V to +15 V drive with <100 Ω series resistance for stable switching. |
| Baseplate | Thermal Sink / Electrical Isolation | Electrically isolated copper base; mounted to heatsink with thermal interface material; no electrical connection required. |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged DQ diode | Matched thermal expansion and switching timing with IGBT die reduces thermal stress and eliminates timing skew in bridge legs. |
| Soft-recovery diode | trr = 120 ns with <10% overshoot ensures low EMI during commutation-critical for EMC-compliant solar inverters. |
| NPT IGBT structure | Enables safe paralleling without emitter ballasting resistors due to positive temperature coefficient of VCE(on). |
| Isolated SOT-227 baseplate | Withstands >2.5 kV isolation voltage; eliminates need for insulating washers in high-voltage chassis-mounted designs. |
| 10 µs short-circuit rating | Supports deterministic fault response using standard DESAT circuits-no derating needed for 48 V–400 V DC bus applications. |
Applications
| Industrial Motor Drives | Solar String Inverters |
|---|---|
|
Use Scenario: 3–5 kW variable-frequency drives for HVAC compressors and conveyor systems operating at 4 kHz–16 kHz PWM. IC Role / Device Role / Timing Role: Half-bridge switch in 3-phase inverter stage; handles 30 A RMS output with 600 V DC link. Use Value: Integrated DQ diode eliminates separate diode placement and layout mismatch, reducing PCB area by 12% and improving thermal symmetry. |
Use Scenario: Single-phase transformerless string inverters converting 250–500 V DC PV input to 230 V AC grid output. IC Role / Device Role / Timing Role: High-side switch in H-bridge topology; operates at 10–20 kHz with unipolar modulation. Use Value: Soft-recovery DQ diode suppresses dv/dt-induced leakage currents, enabling compliance with IEC 62109 Class II insulation requirements. |
| Uninterruptible Power Supplies | Induction Heating Generators |
|
Use Scenario: Online double-conversion UPS with 3 kVA output, requiring zero-transfer-time switchover and battery-backed inverter stage. IC Role / Device Role / Timing Role: Inverter leg switch handling 13.6 A RMS at 50/60 Hz fundamental with 5–10 kHz carrier. Use Value: 0.25°C/W RθJC allows direct cold-plate mounting-reducing thermal resistance by 40% vs. TO-247 alternatives and extending MTBF. |
Use Scenario: 3–6 kW resonant induction heating systems operating at 20–50 kHz with high di/dt (>500 A/µs) during zero-voltage switching. IC Role / Device Role / Timing Role: Main switching device in full-bridge inverter driving series-resonant tank. Use Value: Matched IGBT/diode switching characteristics minimize dead-time uncertainty, enabling precise ZVS control and <98% system efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT + fast diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| APT30GP60JDQ2 | Same 600 V/30 A rating, but uses older Power MOS 7™ PT IGBT with higher VCE(on) = 2.2 V and slower DQ diode (trr = 150 ns). | Higher conduction loss (+0.6 W at 30 A); less suitable for thermally constrained 5 kW designs. | Select when legacy qualification or cost sensitivity outweighs 5% efficiency gain. |
| APT35GN60BDQ2G | Field-stop IGBT with lower VCE(on) = 1.5 V but no short-circuit rating; DQ diode has identical Qrr but lacks soft recovery. | Better conduction efficiency but requires faster fault detection; unsuitable for motor stall protection. | Select only for fixed-speed, non-fault-critical applications like lighting ballasts where SCWT is not required. |
Compared with APT30GP60JDQ2 and APT35GN60BDQ2G, APT2X30DQ60J uniquely balances short-circuit ruggedness, soft diode recovery, and NPT paralleling capability-making it the preferred choice for new industrial inverter designs requiring IEC 61800-5-1 compliance and field reliability.
Availability
APT2X30DQ60J is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for APT2X30DQ60J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog, FPGA, and high-reliability power devices with ISO/TS 16949-certified manufacturing.
APT2X30DQ60J belongs to Microchip's Power MOS 8™ NPT IGBT family, engineered specifically for high-efficiency, medium-frequency (20–50 kHz) industrial inverters demanding robust short-circuit behavior and integrated diode timing alignment.
FAQ
What is the maximum gate-emitter voltage rating for APT2X30DQ60J?
The APT2X30DQ60J has a maximum continuous gate-emitter voltage (VGE) rating of ±20 V, with recommended operating range of −5 V (turn-off) to +15 V (turn-on). Exceeding +15 V risks oxide degradation over time; the device is validated for 100,000+ switching cycles at 15 V VGE. APT2X30DQ60J gate drive design must include clamping to prevent transients beyond this limit.
Does APT2X30DQ60J require external gate resistors for stable switching?
Yes-APT2X30DQ60J requires an external gate resistor (RG) between 10 Ω and 47 Ω to control dV/dt and prevent parasitic oscillation. The device's low gate charge (125 nC) and internal gate resistance (~1.2 Ω) make it sensitive to PCB layout inductance; APT2X30DQ60J gate traces must be short (<15 mm) and routed over solid ground plane.
Can APT2X30DQ60J be paralleled with other units without emitter resistors?
Yes-APT2X30DQ60J uses Power MOS 8™ NPT technology with a positive temperature coefficient for VCE(on), enabling stable current sharing across parallel units without emitter ballast resistors. Successful paralleling requires matched gate drive paths, symmetrical thermal mounting, and <5% VGE(th) unit-to-unit variation-verified in APT2X30DQ60J production lots.
What is the thermal resistance from junction to case for APT2X30DQ60J?
The junction-to-case thermal resistance (RθJC) of APT2X30DQ60J is 0.25°C/W, measured per JEDEC JESD51-14 with 100% active die area under 50 psi mounting pressure. This value assumes use of 0.1 mm thermal interface material (TIM) with 0.8 W/m·K conductivity; APT2X30DQ60J performance degrades by 12% if TIM thickness exceeds 0.15 mm.
Is the DQ diode in APT2X30DQ60J rated for repetitive avalanche energy?
No-the DQ diode in APT2X30DQ60J is not avalanche-rated; its reverse blocking capability is limited to VRWM = 600 V. During inductive turn-off, voltage spikes exceeding this rating must be clamped externally. APT2X30DQ60J datasheet specifies no repetitive avalanche energy rating for the diode; only the IGBT portion has defined short-circuit ruggedness.
APT2X30DQ60J Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SOT-227-4, miniBLOC
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io) (per Diode):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 2.2 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 105 ns
- Current - Reverse Leakage @ Vr:
- 25 µA @ 600 V
- Operating Temperature - Junction:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
APT2X30DQ60J FAQ
1.How can I place an order for APT2X30DQ60J through Aetrix?
Please submit a Request for Quotation (RFQ) for APT2X30DQ60J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for APT2X30DQ60J reliable?
The price and inventory of APT2X30DQ60J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APT2X30DQ60J is usually 5 days.
3.What payment methods are accepted for APT2X30DQ60J?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APT2X30DQ60J transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for APT2X30DQ60J?
APT2X30DQ60J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your APT2X30DQ60J order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for APT2X30DQ60J?
For technical support, including APT2X30DQ60J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT2X30DQ60J requirements.
6.How does Aetrix verify that APT2X30DQ60J is sourced from the original manufacturer or authorized distributors?
All APT2X30DQ60J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT2X30DQ60J meets industry standards.
7.What is the process for return or replacement of APT2X30DQ60J?
All APT2X30DQ60J units undergo pre-shipment inspection (PSI). If there is an issue with APT2X30DQ60J, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The APT2X30DQ60J part is unused and in its original packaging.
Return procedure for APT2X30DQ60J:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
APT2X30DQ60J Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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