Microchip Technology APT2X31DQ120J

Overview

APT2X31DQ120J from Microsemi is an ultrafast soft recovery dual-diode rectifier in ISOTOP® (SOT-227) package, rated for 1200 V blocking voltage and 30 A average forward current at TC = 89°C. It features low forward voltage (VF = 3.25 V max at IF = 30 A), soft reverse recovery (trr = 360 ns max at TJ = 125°C, VR = 800 V), and avalanche energy rating (EAVL = 20 mJ), enabling use as anti-parallel diode in high-frequency IGBT-based motor inverters.

For engineers reviewing the APT2X31DQ120J datasheet, APT2X31DQ120J pinout, APT2X31DQ120J application, or APT2X31DQ120J equivalent, key selection criteria include verified soft recovery behavior, dual-die thermal coupling in ISOTOP®, junction-to-case thermal resistance of 1.1 °C/W, and compatibility with high-di/dt switching (up to −1000 A/µs) in UPS and induction heating systems.

Technical Context

The APT2X31DQ120J integrates two independent ultrafast silicon rectifier dies in a single ISOTOP® package with shared thermal path. Each die delivers soft reverse recovery (low IRRM overshoot and controlled Qrr) and avalanche-rated ruggedness, supporting synchronous operation in anti-parallel configurations without cross-conduction risk.

Its dynamic performance is characterized under defined test conditions: trr measured at IF = 30 A, diF/dt = −200 A/µs, VR = 800 V; Qrr and IRRM validated across TJ = 25°C to 125°C and diF/dt up to −1000 A/µs. Junction capacitance (CT = 36 pF at VR = 200 V) and leakage (IRM = 100 µA max at VR = 1200 V, TJ = 125°C) are specified per die.

Key Specifications

Pinout & Package

APT2X31DQ120J uses the ISOTOP® (SOT-227) package: a 4-terminal, dual-die, isolated-base metal-ceramic module with Anode 1 / Cathode 1 / Anode 2 / Cathode 2 terminals arranged in a symmetrical layout for parallel or anti-parallel connection. Mounting torque: 29.2 lb·in (3.3 N·m).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast soft recovery diode applications.

Compared with APT2X31DQ120J, APT2X30DQ120J offers identical performance in all critical parameters and is interchangeable in layout and thermal design, whereas STTH30L06CW trades voltage capability and ruggedness for faster recovery and lower VF-making it viable only in sub-600 V applications where avalanche immunity is not required.

Availability

APT2X31DQ120J is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and induction heating systems requiring stable component supply, long-lifecycle support, and traceable sourcing from qualified distributors.

Supply support for APT2X31DQ120J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and power discrete solutions for aerospace, defense, and industrial markets.

The APT2X31DQ120J belongs to Microsemi's Ultrafast Soft Recovery Rectifier family, engineered specifically for high-efficiency, high-power-density IGBT-based inverters and converters where low noise, thermal stability, and avalanche ruggedness are mandatory.

FAQ

What is the maximum junction temperature rating for APT2X31DQ120J?

The APT2X31DQ120J has a maximum junction temperature (TJ) rating of 175°C and a storage temperature range of −55°C to +175°C. This wide operating range allows deployment in harsh industrial environments such as enclosed motor control cabinets or outdoor UPS enclosures. The device maintains specified electrical characteristics-including VF, trr, and IRM-up to TJ = 125°C, with derating applied beyond that point per the thermal impedance curve in Figure 1a of the datasheet.

Does APT2X31DQ120J support parallel operation of its two diodes?

Yes, APT2X31DQ120J supports parallel operation: Anode 1 and Anode 2 can be tied together, and Cathode 1 and Cathode 2 can be tied together to achieve 60 A total average forward current capability at TC = 89°C. The matched die characteristics and shared thermal base ensure current sharing within ±10% under typical operating conditions, provided symmetrical PCB layout and mounting pressure are maintained.

What is the isolation voltage rating between terminals and mounting base for APT2X31DQ120J?

The APT2X31DQ120J is UL Recognized with a minimum isolation voltage (VIsolation) of 2500 V RMS between all terminals and the mounting base, tested for 1 minute at 50–60 Hz sinusoidal waveform. This rating satisfies reinforced insulation requirements for industrial equipment operating at 1000 VDC bus levels and ensures safe operation in grounded-chassis systems like variable-frequency drives and grid-tied inverters.

How does the soft recovery characteristic of APT2X31DQ120J reduce EMI in inverter designs?

The soft recovery behavior of APT2X31DQ120J-characterized by low IRRM (< 4 A) and monotonic current decay-minimizes high-frequency ringing and dv/dt-induced noise during IGBT turn-on. Unlike abrupt-recovery diodes, it avoids sharp current zero-crossing discontinuities, reducing common-mode EMI by up to 12 dB in 30–100 MHz bands. This allows smaller EMI filters and simplifies compliance testing for CISPR 11 Class A industrial equipment.

Can APT2X31DQ120J replace APT2X30DQ120J on the same PCB?

Yes, APT2X31DQ120J is mechanically and electrically compatible with APT2X30DQ120J: both use identical ISOTOP® (SOT-227) footprint, pinout, mounting hole pattern, and thermal interface specifications. No PCB changes are required, and all electrical parameters-including VF, trr, Qrr, and RθJC-are identical per datasheet Rev D. The designation difference reflects internal die orientation only, not functional or layout divergence.