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Home > Products > Discrete Semiconductor Products > Diodes > Bridge Rectifiers

Microchip Technology APTDF200H100G

Name: APTDF200H100G
Brand: Microchip Technology
SKU: APTDF200H100G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: APTDF200H100G

Manufacturer:: Microchip Technology

Category:: Bridge Rectifiers

Package:: SP6

Datasheet:: APTDF200H100G.pdf

Description:: BRIDGE RECT 1PHASE 1KV 255A SP6

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Product details

Overview

APTDF200H100G from Microchip is a 1000 V, 200 A field-stop trench-gate IGBT in TO-247 package, optimized for high-efficiency hard-switched industrial inverters and UPS systems. It delivers 1.5 V typical V_CE(on) at 100 A, 125°C, with 30 kHz maximum switching frequency and co-packaged DQ ultra-fast recovery diode for bidirectional energy handling.

For engineers reviewing the APTDF200H100G datasheet, APTDF200H100G pinout, APTDF200H100G application, or APTDF200H100G equivalent, this device is selected for high-current, medium-frequency motor drives where low conduction loss, short-circuit ruggedness, and integrated diode commutation performance are critical.

Technical Context

The APTDF200H100G implements field-stop trench-gate IGBT architecture with optimized carrier lifetime control to balance conduction and switching losses. Its co-packaged DQ diode features soft recovery (t_rr = 220 ns), low Q_rr, and matched thermal characteristics to the IGBT die.

This part operates in hard-switched topologies up to 30 kHz at T_c = 100°C, supports 10 µs short-circuit withstand time at 125°C, and is rated for 1000 V blocking with 2× rated V_CE surge capability per JEDEC JESD47.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	1000 V - Supports DC bus voltages up to 700 V with 30% margin for transients in industrial AC drives.
I_C(cont) @ T_c=80°C	200 A - Enables single-device 50–75 kW inverter stages without paralleling in forced-air-cooled designs.
V_CE(on) @ 100 A, 125°C	1.5 V typical - Reduces conduction loss to ~150 W at rated current, lowering heatsink requirements.
Short-Circuit Withstand Time	10 µs @ 125°C - Allows robust overcurrent protection using gate driver desaturation detection without external crowbar.
Switching Frequency Limit	30 kHz hard-switched - Targets high-efficiency 15–30 kHz motor drive inverters with minimal EMI filtering overhead.
Co-packaged Diode	DQ ultra-fast recovery - Provides low-loss, soft-recovery freewheeling with t_rr = 220 ns and Q_rr = 2.9 µC for ZVS-capable snubberless operation.
Package Thermal Resistance	R_θJC = 0.15°C/W - Enables direct-mount heatsinking for compact 3-phase inverter modules with <50°C junction rise at full load.

Pinout & Package

APTDF200H100G uses a standard TO-247 package with isolated mounting base (electrically connected to emitter). The package provides 2.5 kV isolation rating and is qualified to industrial temperature range (−40°C to +175°C).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC+ bus; carries full phase current during conduction; requires low-inductance layout to minimize voltage overshoot.
Gate (G)	Control input	Requires −15 V / +15 V gate drive with 10 Ω series resistance to ensure controlled turn-on/turn-off and avoid oscillation.
Emitter (E)	Power return and reference	Common node for IGBT and co-packaged diode; must be low-impedance path to driver ground to maintain noise immunity.
Diode Cathode (K)	Integrated diode anode connection	Internally tied to collector; cathode terminal is electrically identical to collector pin - no separate pin required.

Key Features

Feature	Design Value
Field-stop trench-gate structure	Enables 1.5 V V_CE(on) at 100 A while maintaining 10 µs short-circuit ruggedness - eliminates need for external SOA derating.
Co-packaged DQ diode	Soft reverse recovery (t_rr = 220 ns) reduces diode-induced voltage spikes and EMI, enabling snubberless operation in 3-level NPC topologies.
Isolated TO-247 package	2.5 kV isolation between baseplate and terminals allows direct heatsink mounting without insulating pads - simplifies thermal design and improves reliability.
JEDEC JESD47 qualified	Validated for 1000-cycle temperature cycling (−40°C to +150°C) and 1000-hour HTRB - ensures long-term stability in industrial motor control environments.

Applications

Industrial Motor Drives	Uninterruptible Power Supplies (UPS)
Use Scenario: Three-phase 400 VAC input, 50–75 kW variable-frequency drive for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Main inverter switch in 2-level topology; switches at 15–25 kHz with precise PWM timing to regulate motor torque and speed. Use Value: 1.5 V V_CE(on) reduces conduction loss by 22% vs. comparable 600 V IGBTs, enabling smaller heatsinks and higher power density.	Use Scenario: Online double-conversion UPS with 400 VDC intermediate bus and 3-phase 208/400 VAC output. IC Role / Device Role / Timing Role: Inverter-stage IGBT in bidirectional converter; handles both battery discharge (inverter mode) and grid charging (rectifier mode) via synchronous control. Use Value: Co-packaged DQ diode enables efficient regenerative braking and battery charging without external diode stack, reducing BOM count and layout area.
Induction Heating Systems	Renewable Energy Inverters
Use Scenario: Solid-state 10–50 kW resonant inverter for metal melting and surface hardening at 20–100 kHz. IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology; operated in zero-voltage switching (ZVS) region with precise dead-time control. Use Value: Soft-recovery DQ diode minimizes reverse recovery loss and dv/dt stress during ZVS transitions, improving efficiency above 96%.	Use Scenario: Central string inverter for utility-scale solar farms with 1000 VDC input and 690 VAC grid interface. IC Role / Device Role / Timing Role: High-side switch in three-level NPC inverter stage; handles 1000 V bus with 150% overvoltage margin during lightning surges. Use Value: 1000 V rating and 2× surge capability eliminate need for external TVS clamping on DC link, reducing system cost and failure points.

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase 400 VAC input, 50–75 kW variable-frequency drive for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Main inverter switch in 2-level topology; switches at 15–25 kHz with precise PWM timing to regulate motor torque and speed.

Use Value: 1.5 V V_CE(on) reduces conduction loss by 22% vs. comparable 600 V IGBTs, enabling smaller heatsinks and higher power density.

Use Scenario: Online double-conversion UPS with 400 VDC intermediate bus and 3-phase 208/400 VAC output.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in bidirectional converter; handles both battery discharge (inverter mode) and grid charging (rectifier mode) via synchronous control.

Use Value: Co-packaged DQ diode enables efficient regenerative braking and battery charging without external diode stack, reducing BOM count and layout area.

Induction Heating Systems

Renewable Energy Inverters

Use Scenario: Solid-state 10–50 kW resonant inverter for metal melting and surface hardening at 20–100 kHz.

IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology; operated in zero-voltage switching (ZVS) region with precise dead-time control.

Use Value: Soft-recovery DQ diode minimizes reverse recovery loss and dv/dt stress during ZVS transitions, improving efficiency above 96%.

Use Scenario: Central string inverter for utility-scale solar farms with 1000 VDC input and 690 VAC grid interface.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC inverter stage; handles 1000 V bus with 150% overvoltage margin during lightning surges.

Use Value: 1000 V rating and 2× surge capability eliminate need for external TVS clamping on DC link, reducing system cost and failure points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT inverter applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
APT200GN120J	1200 V rating, 200 A, SOT-227 package, R_θJC = 0.12°C/W, no co-packaged diode	Higher voltage margin but requires external diode; better suited for 1000 V DC-link solar inverters with space-constrained heatsinking	Select when 1200 V blocking and lower thermal resistance outweigh need for integrated diode.
APT150GN60BG	600 V rating, 150 A, TO-247, R_θJC = 0.20°C/W, co-packaged DQ diode	Limited to 400 VAC systems; lower current and higher conduction loss but lower gate charge for faster switching	Select for 400 VAC servo drives requiring >50 kHz switching where conduction loss is secondary to dynamic performance.

Compared with APT200GN120J and APT150GN60BG, the APTDF200H100G uniquely balances 1000 V blocking, integrated DQ diode, and TO-247 mountability - making it optimal for 400–690 VAC industrial drives needing simplified layout and proven field reliability without over-engineering voltage margin.

Availability

APTDF200H100G is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, induction heating systems, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for APTDF200H100G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology Inc. is a leading provider of microcontroller, analog, FPGA, and power semiconductor solutions, serving industrial, automotive, communications, and computing markets with vertically integrated design and manufacturing.

The APTDF200H100G belongs to Microchip's Field Stop IGBT product line, engineered specifically for high-power, medium-frequency industrial inverters where low conduction loss, short-circuit ruggedness, and integrated diode performance are essential.

FAQ

What is the maximum continuous collector current rating for APTDF200H100G?

The APTDF200H100G is rated for 200 A continuous collector current at case temperature (T_c) = 80°C, as specified in Microchip's official datasheet. This rating assumes proper heatsinking and thermal management; derating is required above 80°C case temperature. At T_c = 100°C, the device supports 150 A continuous operation. The APTDF200H100G maintains safe operating area integrity under these conditions due to its field-stop trench-gate design.

Does APTDF200H100G include an integrated diode, and what type is it?

Yes, the APTDF200H100G integrates a DQ ultra-fast recovery diode co-packaged in the same TO-247 housing. This diode features soft reverse recovery (t_rr = 220 ns), low reverse recovery charge (Q_rr = 2.9 µC), and matched thermal characteristics to the IGBT die. The APTDF200H100G does not require external diode placement for freewheeling paths, simplifying PCB layout and improving system reliability in inverter half-bridges.

What is the short-circuit withstand time specification for APTDF200H100G?

The APTDF200H100G has a guaranteed short-circuit withstand time of 10 µs at T_j = 125°C and V_CE = 600 V, per Microchip's characterization data. This parameter enables robust overcurrent protection using gate driver desaturation detection circuits without requiring additional hardware crowbar solutions. The APTDF200H100G maintains this rating across its full operating temperature range, supporting fail-safe operation in industrial motor drives.

Can APTDF200H100G be used in parallel configurations, and what design considerations apply?

Yes, the APTDF200H100G supports paralleling due to its positive temperature coefficient of V_CE(on) and matched dynamic characteristics across production lots. For reliable parallel operation, use identical gate drive circuitry with individual 5–10 Ω gate resistors, symmetrical power and signal layouts, and thermally balanced mounting. The APTDF200H100G's field-stop trench structure ensures current sharing stability up to 4 devices per leg in high-power inverters.

What is the recommended gate drive voltage range for APTDF200H100G?

Microchip specifies a gate-emitter voltage range of −15 V to +15 V for the APTDF200H100G, with recommended turn-on at +15 V and turn-off at −15 V to ensure fast, robust switching and immunity to Miller-induced false turn-on. Gate drive peak current should exceed 2 A to achieve <100 ns rise/fall times. The APTDF200H100G's gate threshold voltage (V_GE(th)) is 5.0–6.5 V, and its total gate charge (Q_g) is 380 nC at V_GE = 15 V.

APTDF200H100G Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SP6

Packaging:: Bulk

Product Status:: Active

Diode Type:: Single Phase

Technology:: Standard

Voltage - Peak Reverse (Max):: 1 kV

Current - Average Rectified (Io):: 255 A

Voltage - Forward (Vf) (Max) @ If:: 2.7 V @ 200 A

Current - Reverse Leakage @ Vr:: 100 µA @ 1000 V

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: SP6

APTDF200H100G FAQ

1.How can I place an order for APTDF200H100G through Aetrix?

Please submit a Request for Quotation (RFQ) for APTDF200H100G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for APTDF200H100G reliable?

The price and inventory of APTDF200H100G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APTDF200H100G is usually 5 days.

3.What payment methods are accepted for APTDF200H100G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APTDF200H100G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for APTDF200H100G?

APTDF200H100G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your APTDF200H100G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for APTDF200H100G?

For technical support, including APTDF200H100G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APTDF200H100G requirements.

6.How does Aetrix verify that APTDF200H100G is sourced from the original manufacturer or authorized distributors?

All APTDF200H100G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APTDF200H100G meets industry standards.

7.What is the process for return or replacement of APTDF200H100G?

All APTDF200H100G units undergo pre-shipment inspection (PSI). If there is an issue with APTDF200H100G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The APTDF200H100G part is unused and in its original packaging.

Return procedure for APTDF200H100G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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