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Microchip Technology APTDF200KK120D16AG
- Part No.:
- APTDF200KK120D16AG
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
APTDF200KK120D16AG.pdf
- Description:
- DIODE MODULE GEN PURP 1200V 410A
- Quantity:
- Payment:
- Shipping:
Inventory:10
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Product details
Overview
APTDF200KK120D16AG from Microchip Technology is a 1200V, 200A fast-recovery common-cathode diode power module with aluminum nitride (AlN) substrate, M6 power terminals, and 4000 VRMS isolation voltage-designed for high-frequency rectification in UPS, induction heating, and welding inverters.
For engineers reviewing the APTDF200KK120D16AG datasheet, APTDF200KK120D16AG pinout, APTDF200KK120D16AG application, or APTDF200KK120D16AG equivalent, key selection criteria include reverse recovery time (210–480 ns), junction-to-case thermal resistance (0.135 °C/W), soft-recovery behavior, and direct heatsink-mounting capability in an isolated package.
Technical Context
This device integrates two ultra-fast diodes in a common-cathode configuration within a single isolated AlN-based module, enabling bidirectional high-current freewheeling paths with matched dynamic characteristics. Its soft-recovery profile minimizes voltage overshoot and EMI during commutation in hard-switched IGBT or SiC inverter legs.
The module supports continuous DC forward current up to 200 A at TC = 115 °C and handles non-repetitive surge currents of 1000 A (8.3 ms), with reverse leakage limited to 200 μA at 1200 V and junction temperature up to 175 °C-making it suitable for demanding industrial switching applications requiring robust thermal margin and low-noise turn-off.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive blocking voltage per diode; enables use in 600–800 V DC-link systems with safety margin. |
| IF (TC = 115 °C) | 200 A - Continuous forward current rating at case temperature; defines steady-state conduction capacity in thermal-limited operation. |
| trr (TJ = 125 °C, di/dt = 2000 A/μs) | 210 ns - Ultra-fast reverse recovery time under high di/dt; reduces switching losses and voltage spikes in high-frequency inverters. |
| RthJC | 0.135 °C/W - Low junction-to-case thermal resistance due to AlN substrate; enables efficient heat transfer to external heatsink. |
| VISOL | 4000 VRMS - Isolation voltage between any terminal and case; satisfies reinforced insulation requirements for industrial safety standards. |
| Qrr (TJ = 125 °C) | 19 μC - Reverse recovery charge under high di/dt; directly impacts turn-off loss and snubber design in IGBT/SiC half-bridges. |
| VF (IF = 200 A, TJ = 125 °C) | 1.8 V - Forward voltage drop at rated current and elevated junction temperature; determines conduction loss and thermal loading. |
Pinout & Package
APTDF200KK120D16AG uses a dual-diode common-cathode configuration in an isolated ceramic-packaged module with M6 screw terminals. The package features direct heatsink mounting via insulated baseplate and includes three terminals: Anode 1 (A1), Anode 2 (A2), and Common Cathode (K).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Anode of Diode 1 | Connects to high-side switch node (e.g., IGBT collector) in phase-leg topology; carries forward current during positive half-cycle. |
| A2 | Anode of Diode 2 | Connects to complementary switch node (e.g., second IGBT collector); enables symmetrical freewheeling in dual-phase or bridge configurations. |
| K | Common Cathode | Shared cathode output node tied to DC-link negative rail; provides low-inductance return path for both diodes' conduction currents. |
Key Features
| Feature | Design Value |
|---|---|
| Soft-recovery characteristics | Minimizes voltage overshoot and EMI during diode turn-off, reducing snubber component stress and system-level filtering requirements. |
| Aluminum Nitride (AlN) substrate | Provides 3× higher thermal conductivity than alumina ceramics, enabling lower junction temperature rise and extended lifetime under high-power cycling. |
| M6 power connectors | Supports high-current mechanical termination with 3–5 N·m torque specification, ensuring reliable contact pressure and low interfacial resistance over thermal cycles. |
| Direct heatsink mounting (isolated) | Eliminates need for insulating washers or thermal pads between baseplate and heatsink, reducing total thermal resistance by up to 0.05 °C/W. |
| RoHS compliant & halogen-free | Meets environmental compliance requirements for industrial equipment sold in EU, North America, and Asia-Pacific markets without compromising thermal or electrical performance. |
Applications
| Uninterruptible Power Supply (UPS) | Induction Heating |
|---|---|
Use Scenario: High-frequency rectification and regeneration in double-conversion online UPS systems operating at 10–20 kHz switching frequency. IC Role / Device Role / Timing Role: Fast diode module providing low-loss, soft-recovery freewheeling and input rectification in IGBT-based inverter and rectifier stages. Use Value: Enables >96% system efficiency at full load by minimizing reverse recovery losses and reducing snubber energy dissipation. |
Use Scenario: Resonant tank rectification and freewheeling in solid-state induction heating inverters delivering 10–100 kW at 20–100 kHz. IC Role / Device Role / Timing Role: Common-cathode diode pair handling bidirectional resonant current in series-resonant half-bridge topologies. Use Value: Soft recovery prevents destructive voltage ringing across IGBTs, allowing stable operation without active clamping circuits. |
| Welding Equipment | High-Speed Rectifiers |
Use Scenario: Output rectification in inverter-based arc welding power supplies with pulsed current control and rapid duty-cycle transitions. IC Role / Device Role / Timing Role: High-current diode module conducting peak output currents up to 400 A during short-duration weld pulses. Use Value: Withstands 1000 A non-repetitive surge and maintains <200 μA leakage at 1200 V, ensuring reliability during repeated thermal transients. |
Use Scenario: Primary-side rectification in high-frequency DC-DC converters used in telecom and server power supplies. IC Role / Device Role / Timing Role: Fast-recovery diode module replacing discrete TO-247 devices to reduce layout parasitics and improve thermal coupling. Use Value: 0.135 °C/W RthJC and AlN substrate allow 30% higher power density versus standard silicon diode modules at same footprint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXDN200KK120D16 | Same 1200 V/200 A rating and common-cathode configuration, but uses Al2O3 substrate (RthJC = 0.18 °C/W) and lacks 4000 VRMS isolation. | Requires external isolation barrier for safety-critical UPS/welding; less suited for space-constrained designs needing integrated isolation. | Select when cost sensitivity outweighs thermal performance and isolation requirements. |
| Vishay VS-200KH120 | Discrete dual-diode module with identical voltage/current ratings but no common-cathode integration-requires separate cathode routing and higher layout inductance. | Increases PCB area and EMI risk in high-di/dt applications; not drop-in replaceable due to different pinout and mounting scheme. | Select only when legacy board reuse mandates discrete footprint compatibility. |
Compared with IXDN200KK120D16 and VS-200KH120, the APTDF200KK120D16AG delivers superior thermal performance (0.135 vs. 0.18 °C/W), built-in 4000 VRMS isolation, and true common-cathode integration-reducing system-level complexity and improving reliability in high-power industrial inverters.
Availability
APTDF200KK120D16AG is available at Aetrix Electronics and suitable for uninterruptible power supply (UPS), induction heating, and welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for APTDF200KK120D16AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology Inc. is a global semiconductor company specializing in microcontrollers, analog devices, FPGAs, and power modules, with headquarters in Chandler, Arizona and operations worldwide.
The APTDF200KK120D16AG belongs to Microchip's high-voltage fast diode module product line, engineered specifically for industrial inverter applications demanding low-loss, soft-recovery, and thermally robust power conversion.
FAQ
What is the maximum junction temperature rating for the APTDF200KK120D16AG?
The APTDF200KK120D16AG has a maximum operating junction temperature (TJ) of 175 °C, with a recommended maximum under switching conditions set at TJmax – 25 °C (i.e., 150 °C) to ensure long-term reliability and thermal margin during transient overload events. This rating is confirmed in Table 1-4 of the official DS00005268A datasheet.
Does the APTDF200KK120D16AG support direct mounting to a heatsink without additional insulation?
Yes, the APTDF200KK120D16AG features an electrically isolated baseplate rated for 4000 VRMS, enabling direct mounting to a conductive heatsink without thermal interface materials or insulating hardware. This design reduces total thermal resistance and simplifies mechanical assembly while maintaining safety isolation-verified in the Thermal and Package Characteristics section of the datasheet.
What is the reverse recovery time (trr) of the APTDF200KK120D16AG under high-di/dt conditions?
The APTDF200KK120D16AG achieves a reverse recovery time of 210 ns when tested at IF = 200 A, VR = 800 V, di/dt = 2000 A/μs, and TJ = 125 °C-significantly faster than standard recovery diodes and critical for minimizing switching losses in high-frequency IGBT inverters. This value is specified in Table 1-3 of the DS00005268A datasheet.
How does the aluminum nitride (AlN) substrate improve thermal performance in the APTDF200KK120D16AG?
The aluminum nitride (AlN) substrate in the APTDF200KK120D16AG provides ~170 W/m·K thermal conductivity-nearly triple that of standard alumina ceramics-resulting in a measured junction-to-case thermal resistance of just 0.135 °C/W. This enables more efficient heat extraction and lower steady-state junction temperatures compared to Al2O3-based alternatives, as documented in Table 1-4 and Figure 3-1 of the datasheet.
Can the APTDF200KK120D16AG be used as a direct replacement for discrete TO-247 fast diodes in existing designs?
The APTDF200KK120D16AG is not a direct footprint replacement for discrete TO-247 diodes due to its module form factor, M6 screw terminals, and common-cathode configuration-but it offers functional equivalence with significant system-level advantages: reduced layout inductance, integrated isolation, and superior thermal performance. Redesign of the mechanical mounting and terminal interface is required, as outlined in the Package Outline Drawing (Figure 2-1) of DS00005268A.
APTDF200KK120D16AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io) (per Diode):
- 410A
- Voltage - Forward (Vf) (Max) @ If:
- 3.5 V @ 200 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 385 ns
- Current - Reverse Leakage @ Vr:
- 200 µA @ 1200 V
- Operating Temperature - Junction:
- -40°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
APTDF200KK120D16AG FAQ
1.How can I place an order for APTDF200KK120D16AG through Aetrix?
Please submit a Request for Quotation (RFQ) for APTDF200KK120D16AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for APTDF200KK120D16AG reliable?
The price and inventory of APTDF200KK120D16AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APTDF200KK120D16AG is usually 5 days.
3.What payment methods are accepted for APTDF200KK120D16AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APTDF200KK120D16AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for APTDF200KK120D16AG?
APTDF200KK120D16AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your APTDF200KK120D16AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for APTDF200KK120D16AG?
For technical support, including APTDF200KK120D16AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APTDF200KK120D16AG requirements.
6.How does Aetrix verify that APTDF200KK120D16AG is sourced from the original manufacturer or authorized distributors?
All APTDF200KK120D16AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APTDF200KK120D16AG meets industry standards.
7.What is the process for return or replacement of APTDF200KK120D16AG?
All APTDF200KK120D16AG units undergo pre-shipment inspection (PSI). If there is an issue with APTDF200KK120D16AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The APTDF200KK120D16AG part is unused and in its original packaging.
Return procedure for APTDF200KK120D16AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
APTDF200KK120D16AG Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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