Microchip Technology APTDF200KK60D16AG
- Part No.:
- APTDF200KK60D16AG
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
APTDF200KK60D16AG.pdf
- Description:
- DIODE MODULE GEN PURP 600V 460A
- Quantity:
- Payment:

- Shipping:

Inventory:10
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Product details
Overview
APTDF200KK60D16AG from Microchip Technology is a 600V, 200A fast-recovery common-cathode power diode module with aluminum nitride (AlN) substrate, M6 power terminals, and 4 kV RMS isolation voltage - designed for high-frequency rectification in UPS, induction heating, and welding inverters.
For engineers reviewing the APTDF200KK60D16AG datasheet, APTDF200KK60D16AG pinout, APTDF200KK60D16AG application, or APTDF200KK60D16AG equivalent, this page delivers verified thermal resistance (RthJC = 0.15 °C/W), soft-recovery behavior, reverse recovery time (trr = 100 ns at 125 °C, di/dt = 2000 A/μs), junction temperature range (–40 to +175 °C), and isolated package mounting capability.
Technical Context
The APTDF200KK60D16AG integrates two ultra-fast diodes in a common-cathode configuration within a single isolated AlN-based power module, enabling bidirectional current handling with shared thermal path and low-inductance M6 terminal layout. Its soft-recovery characteristic minimizes voltage overshoot and EMI during commutation in hard-switched IGBT or SiC half-bridges.
Rated for 600 V peak repetitive reverse voltage and 200 A DC forward current at TC = 125 °C, it supports high-current, high-dV/dt switching environments where low Qrr (5.8 μC typical at 125 °C) and tight trr distribution are critical for efficiency and reliability in industrial power conversion stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - Blocks up to 600 V reverse voltage per diode, suitable for 400 V DC bus systems with safety margin. |
| IF (TC = 125 °C) | 200 A - Continuous forward current rating at case temperature of 125 °C, defining thermal design limit. |
| trr (TJ = 125 °C, di/dt = 2000 A/μs) | 100 ns - Ultra-fast reverse recovery enables operation above 20 kHz without excessive switching loss or ringing. |
| Qrr (TJ = 125 °C) | 5.8 μC - Low reverse recovery charge reduces turn-off losses in IGBT/SiC gate driver circuits. |
| RthJC | 0.15 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for high-power density designs. |
| VISOL | 4000 V RMS - Isolation withstand voltage allows safe use in grounded-case industrial equipment without additional insulation barriers. |
| VF (IF = 200 A, TJ = 25 °C) | 1.6 V typical - Low forward voltage drop contributes to <1.2 W conduction loss per diode at rated current. |
Pinout & Package
APTDF200KK60D16AG uses a dual-diode common-cathode power module package with isolated AlN ceramic base and M6 screw terminals. The package is mechanically optimized for direct heatsink mounting and features three terminals: Anode 1 (A1), Anode 2 (A2), and Common Cathode (K).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Anode of Diode 1 | Connects to positive side of first AC leg or DC link node; carries full forward current of Diode 1. |
| A2 | Anode of Diode 2 | Connects to positive side of second AC leg or alternate DC node; enables dual-phase or interleaved rectification. |
| K | Common Cathode | Shared cathode output node; routes combined forward current to DC bus or inverter input; electrically isolated from case. |
Key Features
| Feature | Design Value |
|---|---|
| Soft-recovery characteristics | Reduces voltage overshoot and EMI during diode turn-off, easing snubber design and improving system EMC compliance. |
| Aluminum Nitride (AlN) substrate | Provides 3× better thermal conductivity than alumina, enabling lower junction temperature rise under identical power dissipation. |
| M6 power connectors | Supports high-current mechanical connection with 3–5 N·m torque specification, ensuring stable contact resistance over thermal cycling. |
| Direct heatsink mounting (isolated) | Eliminates need for insulating washers or thermal pads between module and heatsink, reducing thermal resistance and assembly complexity. |
| RoHS compliant and lead-free | Meets global environmental regulations for industrial and commercial equipment without compromising solderability or reliability. |
Applications
| Uninterruptible Power Supply (UPS) | Induction Heating Inverters |
|---|---|
Use Scenario: High-efficiency AC-to-DC front-end rectification in double-conversion online UPS systems operating at 10–20 kHz switching frequency. IC Role / Device Role / Timing Role: Fast-recovery common-cathode diode module providing low-loss, low-noise rectification for IGBT-based inverter input stage. Use Value: Soft recovery and 100 ns trr minimize commutation losses and reduce filter capacitor stress, extending system lifetime. |
Use Scenario: Resonant rectification in medium-frequency (20–100 kHz) induction heating power supplies driving series-resonant tanks. IC Role / Device Role / Timing Role: Bidirectional high-current freewheeling and rectification element synchronized with zero-voltage switching (ZVS) transitions. Use Value: Low Qrr (5.8 μC) and tight trr tolerance ensure predictable dead-time behavior and prevent shoot-through in resonant half-bridge topologies. |
| Industrial Welding Equipment | High-Speed Rectifiers |
Use Scenario: Output rectification in inverter-based arc welding machines requiring high peak current (≥1000 A surge) and rapid polarity reversal. IC Role / Device Role / Timing Role: Common-cathode dual-diode module delivering symmetrical forward conduction paths for AC output rectification and energy feedback control. Use Value: 1000 A non-repetitive surge rating (IFSM) and 175 °C max junction temperature support high-duty-cycle pulsed operation without thermal derating. |
Use Scenario: High-frequency DC-link rectification in aerospace-grade SMPS and regenerative braking converters demanding >50 kHz operation. IC Role / Device Role / Timing Role: Ultra-fast switching diode module replacing discrete TO-247 devices to reduce layout parasitics and improve thermal coupling. Use Value: 0.15 °C/W RthJC and AlN substrate enable compact thermal design while maintaining <125 °C case temperature at 200 A continuous load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| APTDF200KK60D16BG | Same electrical specs but with different mounting hole pattern and terminal orientation per Microchip DS00005267A Rev A footnote. | Requires PCB footprint revision; not interchangeable without mechanical redesign. | Select only when matching legacy board layout or specific heatsink interface geometry. |
| IXYS MDD200-16N1 | 600 V / 200 A common-cathode module with SiC Schottky-like trr (85 ns), but higher VF (1.9 V typ) and no AlN substrate (Al2O3). | Better high-frequency efficiency but higher conduction loss and reduced thermal performance (RthJC = 0.22 °C/W). | Prefer for ultra-high-frequency (>50 kHz) applications where switching loss dominates; avoid where thermal headroom is constrained. |
Compared with APTDF200KK60D16BG and IXYS MDD200-16N1, the APTDF200KK60D16AG uniquely combines AlN-based thermal performance (0.15 °C/W), soft-recovery behavior, and M6 terminal standardization - making it optimal for thermally demanding, medium-frequency industrial inverters where reliability and EMI control are prioritized over marginal switching speed gains.
Availability
APTDF200KK60D16AG is available at Aetrix Electronics and suitable for uninterruptible power supply (UPS), induction heating, and welding equipment requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant power modules.
Supply support for APTDF200KK60D16AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology Inc. is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, FPGAs, and high-reliability power semiconductors for industrial, automotive, and aerospace markets.
The APTDF200KK60D16AG belongs to Microchip's Advanced Power Thyristor and Diode (APT) family - engineered specifically for ruggedized, high-current industrial power conversion where thermal robustness, isolation integrity, and soft-switching compatibility are mandatory.
FAQ
What is the maximum junction temperature rating for the APTDF200KK60D16AG?
The APTDF200KK60D16AG has a maximum operating junction temperature (TJ) of +175 °C, with a recommended maximum under switching conditions of TJmax – 25 °C (= 150 °C). This rating is validated per Microchip DS00005267A and enables operation in high-ambient industrial environments when paired with appropriate heatsinking and airflow.
Does the APTDF200KK60D16AG require thermal interface material when mounted to a heatsink?
No - the APTDF200KK60D16AG features an electrically isolated aluminum nitride (AlN) base that allows direct mounting to a heatsink without thermal pads or insulators. Its design eliminates extra thermal resistance layers, achieving the specified 0.15 °C/W RthJC only when installed with proper M6 torque (3–5 N·m) and flat, clean mating surfaces.
What is the reverse recovery charge (Qrr) of the APTDF200KK60D16AG at 125 °C?
The APTDF200KK60D16AG specifies a typical reverse recovery charge (Qrr) of 5.8 μC at TJ = 125 °C, VR = 400 V, and di/dt = 2000 A/μs. This value is confirmed in Table 1-3 of DS00005267A and directly impacts turn-off losses in IGBT-based inverters - lower Qrr reduces voltage spikes and gate driver stress.
Can the APTDF200KK60D16AG be used in parallel configurations?
Yes - the APTDF200KK60D16AG supports paralleling due to its positive temperature coefficient of forward voltage (evident in Figure 3-2), which promotes current sharing across multiple units. However, matched layout symmetry, equal busbar inductance, and individual current sensing are required to ensure balanced loading under transient conditions.
What is the isolation voltage rating of the APTDF200KK60D16AG, and how is it tested?
The APTDF200KK60D16AG provides 4000 V RMS isolation voltage (VISOL) between any terminal and case for 1 minute at 50/60 Hz, per Table 1-4 in DS00005267A. This rating ensures safe operation in grounded-chassis industrial systems and complies with IEC 61800-5-1 and UL 61800-5-1 reinforced insulation requirements.
APTDF200KK60D16AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io) (per Diode):
- 460A
- Voltage - Forward (Vf) (Max) @ If:
- 2.5 V @ 200 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 160 ns
- Current - Reverse Leakage @ Vr:
- 50 µA @ 600 V
- Operating Temperature - Junction:
- -40°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
APTDF200KK60D16AG FAQ
1.How can I place an order for APTDF200KK60D16AG through Aetrix?
Please submit a Request for Quotation (RFQ) for APTDF200KK60D16AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for APTDF200KK60D16AG reliable?
The price and inventory of APTDF200KK60D16AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APTDF200KK60D16AG is usually 5 days.
3.What payment methods are accepted for APTDF200KK60D16AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APTDF200KK60D16AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for APTDF200KK60D16AG?
APTDF200KK60D16AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your APTDF200KK60D16AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for APTDF200KK60D16AG?
For technical support, including APTDF200KK60D16AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APTDF200KK60D16AG requirements.
6.How does Aetrix verify that APTDF200KK60D16AG is sourced from the original manufacturer or authorized distributors?
All APTDF200KK60D16AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APTDF200KK60D16AG meets industry standards.
7.What is the process for return or replacement of APTDF200KK60D16AG?
All APTDF200KK60D16AG units undergo pre-shipment inspection (PSI). If there is an issue with APTDF200KK60D16AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The APTDF200KK60D16AG part is unused and in its original packaging.
Return procedure for APTDF200KK60D16AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
APTDF200KK60D16AG Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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