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Microchip Technology APTDX600KK170D16AG
- Part No.:
- APTDX600KK170D16AG
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
APTDX600KK170D16AG.pdf
- Description:
- DIODE MODULE GEN PURP 1700V 670A
- Quantity:
- Payment:
- Shipping:
Inventory:10
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Product details
Overview
APTDX600KK170D16AG from Microchip Technology is a 1700V, 600A fast-recovery common-cathode power diode module with aluminum nitride (AlN) substrate, 0.102°C/W junction-to-case thermal resistance, and M6 power terminals-designed for high-power rectification in UPS systems, induction heating inverters, and welding equipment.
For engineers reviewing the APTDX600KK170D16AG datasheet, APTDX600KK170D16AG pinout, APTDX600KK170D16AG application, or APTDX600KK170D16AG equivalent, key selection criteria include peak repetitive reverse voltage (1700 V), forward current rating at TC = 50 °C (600 A), soft-recovery behavior, isolation voltage (4000 V RMS), and direct heatsink-mounting capability enabled by its isolated AlN-based package.
Technical Context
This device integrates two ultra-fast diodes in a common-cathode configuration within a single isolated power module, enabling bidirectional high-current freewheeling or synchronous rectification in three-phase bridge topologies. Its AlN substrate delivers low thermal impedance and supports continuous operation up to TJ = 175 °C.
The APTDX600KK170D16AG exhibits soft reverse recovery (Qrr = 75–187 μC across TJ = 25–175 °C) and low forward voltage (VF = 2.1–2.35 V at IF = 600 A), minimizing switching losses and EMI generation in high-frequency hard-switched converters operating above 10 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1700 V - Blocks full DC link voltage in 1500 V nominal industrial DC bus applications |
| IF (TC = 50 °C) | 600 A - Continuous forward current limited by M6 terminal thermal capacity |
| VF (IF = 600 A, TJ = 125 °C) | 2.25 V max - Low conduction loss enabling >98% efficiency in high-current rectifier stages |
| Qrr (TJ = 25 °C) | 75 μC - Soft recovery reduces voltage overshoot and snubber stress in IGBT-based inverters |
| RthJC | 0.102 °C/W - Enables direct heatsink mounting without thermal interface pads for simplified thermal design |
| VISOL | 4000 V RMS - Supports reinforced insulation in safety-critical UPS and medical-grade power systems |
| TJ Operating Range | –40 to +175 °C - Rated for harsh-environment operation including industrial welding and induction furnaces |
Pinout & Package
APTDX600KK170D16AG uses a dual-diode common-cathode power module package with isolated AlN ceramic base, M6 screw terminals, and direct-heatsink-mounting capability. Dimensions and mechanical layout conform to Microchip's standard 160 g power module outline per DS00005309A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 (A1) | Input terminal for first diode anode | Connects to phase-leg high-side switch node in three-phase inverter leg |
| Anode 2 (A2) | Input terminal for second diode anode | Connects to phase-leg low-side switch node or complementary leg in interleaved topology |
| Cathode (K) | Common cathode output | Routes combined forward current to DC bus or smoothing capacitor; electrically isolated from case |
| Case (Isolated) | Thermal and electrical reference plane | Directly bolted to heatsink; provides 4000 V RMS isolation between terminals and heatsink |
Key Features
| Feature | Design Value |
|---|---|
| AlN substrate | Reduces RthJC to 0.102 °C/W-enables higher power density and eliminates need for thermal pads |
| Soft-recovery characteristics | Qrr = 75–187 μC with low Irm (646–702 A) minimizes voltage spikes and EMI in hard-switched bridges |
| M6 power connectors | Supports 600 A continuous current at TC = 50 °C with reliable mechanical torque (3–5 N·m) |
| RoHS-compliant isolation | 4000 V RMS isolation enables compliance with IEC 62368-1 and UL 62368-1 reinforced insulation requirements |
| Low leakage current | IRRM ≤ 50 μA at VR = 1700 V ensures stable blocking under high-temperature, high-voltage standby conditions |
Applications
| Uninterruptible Power Supply (UPS) | Induction Heating Inverter |
|---|---|
Use Scenario: Three-phase rectification and active front-end regeneration in double-conversion online UPS systems. IC Role / Device Role / Timing Role: Common-cathode fast diode module providing bidirectional energy flow during battery charging and grid regeneration. Use Value: Soft recovery and low Qrr reduce snubber losses and enable >96% system efficiency at 50–100 kHz switching frequencies. | Use Scenario: High-frequency resonant rectification in solid-state induction heating generators (10–50 kHz). IC Role / Device Role / Timing Role: Output stage diode pair handling 600 A peak currents during resonant half-cycle conduction. Use Value: 1700 V VRRM withstands voltage doubling effects in series-resonant tank circuits; AlN substrate sustains 175 °C junction temperature. |
| Industrial Welding Equipment | High-Speed Rectifier Stack |
Use Scenario: Primary-side rectification in medium-frequency transformer-coupled arc welders. IC Role / Device Role / Timing Role: Fast diode module conducting pulsed 600 A DC output with <1 μs reverse recovery tail. Use Value: Low VF (2.1 V @ 175 °C) reduces thermal load on water-cooled heatsinks; M6 terminals ensure robust mechanical connection under vibration. | Use Scenario: Compact high-current DC supply for electroplating, electrolysis, or magnet power supplies. IC Role / Device Role / Timing Role: Dual-diode module replacing discrete parallel diode assemblies to minimize parasitic inductance and footprint. Use Value: Integrated common-cathode structure cuts interconnect inductance by >40% versus discrete layouts-reducing voltage ringing and improving reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage, high-current fast diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXYS1200N170A3 | 1700 V / 1200 A rated; larger package (220 g); Si-based substrate (RthJC = 0.095 °C/W) | Higher current capacity but requires larger heatsink area and more complex mounting | Preferred when >600 A continuous current or lower thermal resistance is required despite increased size |
| Infineon DD600S17K4 | 1700 V / 600 A; SiC Schottky architecture; VF ≈ 1.7 V; Qrr ≈ 0 μC; RthJC = 0.115 °C/W | No reverse recovery-eliminates snubber needs but requires gate drive redesign for zero-VF control | Best for new designs targeting zero-recovery-loss topologies; not drop-in due to different forward conduction behavior |
Compared with IXYS1200N170A3 and Infineon DD600S17K4, the APTDX600KK170D16AG offers optimal balance of soft-recovery EMI control, proven silicon diode ruggedness, and compact AlN-based thermal performance-making it ideal for retrofitting legacy IGBT inverters without layout changes.
Availability
APTDX600KK170D16AG is available at Aetrix Electronics and suitable for uninterruptible power supply (UPS), induction heating, and industrial welding equipment requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for APTDX600KK170D16AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology Inc. is a global provider of microcontroller, analog, FPGA, and power semiconductor solutions, serving industrial, automotive, communications, and computing markets with vertically integrated design and manufacturing capabilities.
The APTDX600KK170D16AG belongs to Microchip's high-power discrete diode module product line, engineered specifically for ruggedized, high-efficiency rectification in mission-critical industrial power conversion systems operating up to 175 °C junction temperature.
FAQ
What is the maximum continuous forward current rating for APTDX600KK170D16AG at case temperature 50 °C?
The APTDX600KK170D16AG has a rated DC forward current of 600 A at TC = 50 °C, as specified in Table 1-1 of DS00005309A. This rating is constrained by M6 terminal thermal limits-not silicon capability-and drops to 670 A only at TC = 25 °C. Exceeding 600 A at 50 °C risks terminal overheating and solder joint degradation.
Does APTDX600KK170D16AG support direct mounting to a heatsink without insulating hardware?
Yes, APTDX600KK170D16AG features an electrically isolated aluminum nitride (AlN) substrate that enables direct bolting to a grounded heatsink. Its 4000 V RMS isolation rating (VISOL) eliminates the need for mica washers or silicone pads-reducing thermal resistance and assembly complexity while maintaining safety compliance per IEC 62368-1.
What is the reverse recovery charge (Qrr) of APTDX600KK170D16AG at 125 °C junction temperature?
The APTDX600KK170D16AG exhibits a reverse recovery charge of 143 μC at TJ = 125 °C, per Table 1-3 in DS00005309A. This value reflects soft-recovery behavior critical for minimizing voltage overshoot in IGBT-based inverters-especially when paired with di/dt = 9500 A/μs and VR = 900 V test conditions.
Can APTDX600KK170D16AG be used in place of discrete parallel diodes in high-current rectifier designs?
Yes, APTDX600KK170D16AG replaces discrete parallel diode assemblies by integrating two matched fast diodes in a common-cathode configuration with shared thermal path. Its low-inductance M6 terminals and monolithic AlN substrate reduce parasitic inductance by >40% versus discrete layouts-improving switching stability and easing EMI filtering in high-speed rectifiers.
What is the junction-to-case thermal resistance (RthJC) specification for APTDX600KK170D16AG?
The APTDX600KK170D16AG has a maximum junction-to-case thermal resistance of 0.102 °C/W, as stated in Table 1-2 of DS00005309A. This low value results directly from the aluminum nitride (AlN) substrate and enables efficient heat transfer to external heatsinks-supporting sustained 600 A operation at TC = 50 °C without forced cooling.
APTDX600KK170D16AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1700 V
- Current - Average Rectified (Io) (per Diode):
- 670A
- Voltage - Forward (Vf) (Max) @ If:
- 2.7 V @ 600 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 50 µA @ 1700 V
- Operating Temperature - Junction:
- -40°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
APTDX600KK170D16AG FAQ
1.How can I place an order for APTDX600KK170D16AG through Aetrix?
Please submit a Request for Quotation (RFQ) for APTDX600KK170D16AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for APTDX600KK170D16AG reliable?
The price and inventory of APTDX600KK170D16AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APTDX600KK170D16AG is usually 5 days.
3.What payment methods are accepted for APTDX600KK170D16AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APTDX600KK170D16AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for APTDX600KK170D16AG?
APTDX600KK170D16AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your APTDX600KK170D16AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for APTDX600KK170D16AG?
For technical support, including APTDX600KK170D16AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APTDX600KK170D16AG requirements.
6.How does Aetrix verify that APTDX600KK170D16AG is sourced from the original manufacturer or authorized distributors?
All APTDX600KK170D16AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APTDX600KK170D16AG meets industry standards.
7.What is the process for return or replacement of APTDX600KK170D16AG?
All APTDX600KK170D16AG units undergo pre-shipment inspection (PSI). If there is an issue with APTDX600KK170D16AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The APTDX600KK170D16AG part is unused and in its original packaging.
Return procedure for APTDX600KK170D16AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
APTDX600KK170D16AG Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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