Infineon Technologies AUIRF1010EZSTRL
- Part No.:
- AUIRF1010EZSTRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
AUIRF1010EZSTRL.pdf
- Description:
- MOSFET N-CH 60V 75A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:7,745
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AUIRF1010EZSTRL from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in D²PAK (TO-263) package, rated for 60 V VDSS, 6.8 mΩ typ. RDS(on) at 10 V VGS, and 75 A continuous drain current (package-limited). It delivers high-efficiency switching in engine control units, DC-DC converters, and motor drivers where thermal robustness and avalanche capability are critical.
For engineers reviewing the AUIRF1010EZSTRL datasheet, AUIRF1010EZSTRL pinout, AUIRF1010EZSTRL application, or AUIRF1010EZSTRL equivalent, key selection criteria include its 175°C junction rating, 180 mJ tested single-pulse avalanche energy, 58 nC total gate charge, and automotive qualification per AEC-Q101 standards.
Technical Context
This HEXFET® device uses advanced silicon processing to minimize conduction losses while maintaining fast switching (tr = 90 ns, tf = 54 ns) and high ruggedness. Its body diode exhibits 1.3 V forward voltage at 51 A and 41–62 ns reverse recovery time, enabling synchronous rectification and freewheeling in hard-switched topologies.
The MOSFET supports repetitive avalanche operation up to Tjmax with validated energy curves (EAR up to 100 mJ at 25°C), and features a thermally optimized D²PAK package with RθJC = 1.11°C/W - enabling high-power density designs without forced cooling in under-hood environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche; suitable for 48 V automotive systems with transient margin. |
| RDS(on) typ. | 6.8 mΩ @ VGS = 10 V, ID = 51 A - Enables <1 W conduction loss at 75 A, reducing heatsink requirements. |
| ID (pkg-lim) | 75 A @ TC = 25°C - Package thermal limit defines safe continuous current with standard PCB mounting. |
| EAS (tested) | 180 mJ - Validated single-pulse avalanche energy ensures reliability during inductive load turn-off transients. |
| Qg | 58 nC - Gate drive energy requirement informs selection of gate driver ICs and layout parasitic tolerance. |
| TJ max | +175°C - Enables operation in high-ambient under-hood locations without derating below full current. |
| RθJC | 1.11°C/W - Confirmed junction-to-case thermal resistance supports direct heatsink mounting for >100 W dissipation. |
Pinout & Package
Package: D²PAK (TO-263), surface-mount, isolated tab (drain-connected), 3-pin configuration with exposed copper pad for thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Controls channel conduction; requires ≤±20 V bias; 58 nC total charge dictates driver strength. |
| Pin 2 (D) | Drain | High-side switch node; connected to exposed tab; must be electrically isolated from heatsink unless referenced to same potential. |
| Pin 3 (S) | Source | Power return path and gate reference; internal source inductance (7.5 nH) affects switching ringing and di/dt capability. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 6.8 mΩ typ. reduces I²R losses by >30% vs. legacy 60 V MOSFETs at 50 A, improving system efficiency. |
| 175°C junction rating | Enables full 75 A current delivery at case temperatures up to 100°C without derating - critical for compact ECU modules. |
| Repetitive avalanche capability | Validated up to Tjmax with EAR curves (e.g., 100 mJ at 25°C start temp); eliminates need for external snubbers in solenoid/relay drivers. |
| Fast body diode | trr = 41–62 ns and Qrr = 54–81 nC support high-frequency synchronous rectification with low recovery loss. |
| AEC-Q101 qualified | Passed stress tests including HTGB, HTRB, and temperature cycling - certified for safety-critical automotive power stages. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 75 A and 10 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization/de-energization; handles unclamped inductive flyback. Use Value: 180 mJ tested avalanche energy absorbs flyback energy without clamping diodes; 175°C rating sustains operation near hot engine surfaces. |
Use Scenario: Primary-side switch in 48 V-to-12 V bidirectional buck-boost converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Synchronous rectifier and main power switch; operates at 200–500 kHz with tight dead-time control. Use Value: 6.8 mΩ RDS(on) minimizes conduction loss at 50 A average current; fast tr/tf enables high-frequency ZVS/ZCS implementation. |
| Electric Power Steering (EPS) Motor Phase Leg | On-Board Charger (OBC) AC-DC Front-End Switch |
Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter delivering 40 A RMS per phase at 10–20 kHz. IC Role / Device Role / Timing Role: High-current, high-reliability switching element handling regenerative braking energy and PWM commutation. Use Value: Repetitive avalanche rating allows safe operation during short-circuit events; 7.5 nH source inductance mitigates shoot-through risk in gate-drive timing. |
Use Scenario: PFC boost switch in 3.3 kW OBC front-end operating at 65 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC stage; handles 15 A peak current. Use Value: Low Coss (420 pF @ 25 V) and Crss (200 pF) reduce switching loss; 1.11°C/W RθJC enables direct heatsink mounting on compact OBC PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N6LF6 | RDS(on) = 5.2 mΩ (lower), Qg = 65 nC (higher), RθJC = 1.2°C/W, AEC-Q101 qualified | Better conduction loss but slower switching; less suited for >300 kHz PFC stages | Select when lowest RDS(on) dominates over switching speed and thermal resistance. |
| IRF1010ZPBF | RDS(on) = 9.0 mΩ (higher), EAS = 120 mJ (lower), non-automotive grade, TO-220 package | No AEC-Q101 certification; higher thermal resistance (1.5°C/W); unsuitable for under-hood use | Acceptable only for non-automotive industrial prototypes where qualification and thermal performance are secondary. |
Compared with STL100N6LF6 and IRF1010ZPBF, AUIRF1010EZSTRL offers the optimal balance of low RDS(on), proven avalanche ruggedness, and automotive qualification - making it preferred for production ECUs, EPS, and OBCs requiring long-term reliability and thermal headroom.
Availability
AUIRF1010EZSTRL is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and on-board chargers requiring stable component supply across automotive production lifecycles.
Supply support for AUIRF1010EZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRF1010EZSTRL belongs to the HEXFET® automotive power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.
FAQ
Is AUIRF1010EZSTRL pin-compatible with AUIRF1010EZL?
Yes - both share identical D²PAK (TO-263) footprint and 3-pin G-D-S pinout. The "STRL" suffix denotes tape-and-reel packaging (800 units/reel), while "L" indicates tube packaging (50 units/tube); electrical and thermal specs are identical.
What is the maximum recommended gate resistor for driving AUIRF1010EZSTRL at 200 kHz?
A 7.95 Ω gate resistor is specified in the datasheet for dynamic characterization (td(on), tr). For 200 kHz operation, a 5–10 Ω resistor balances switching speed and gate driver stress; lower values increase dV/dt but risk overshoot due to 7.5 nH source inductance.
Does AUIRF1010EZSTRL require a negative gate voltage for reliable turn-off in high-noise automotive environments?
No - its VGS(th) range (2.0–4.0 V) and ±20 V absolute maximum gate rating allow robust 0 V turn-off. However, –5 V gate drive is recommended in high-di/dt applications to suppress Miller-induced false turn-on, especially when paralleling devices.
Can AUIRF1010EZSTRL replace IRF1010E in an existing industrial design?
Only after validation: AUIRF1010EZSTRL has lower RDS(on) (6.8 mΩ vs. 9.0 mΩ) and higher avalanche rating (180 mJ vs. 120 mJ), but differs in package (D²PAK vs. TO-220) and thermal interface. PCB layout, heatsinking, and gate drive must be requalified for automotive-grade performance and reliability.
AUIRF1010EZSTRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2810 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
AUIRF1010EZSTRL FAQ
1.How can I place an order for AUIRF1010EZSTRL through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF1010EZSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF1010EZSTRL reliable?
The price and inventory of AUIRF1010EZSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1010EZSTRL is usually 5 days.
3.What payment methods are accepted for AUIRF1010EZSTRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1010EZSTRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF1010EZSTRL?
AUIRF1010EZSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF1010EZSTRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF1010EZSTRL?
For technical support, including AUIRF1010EZSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1010EZSTRL requirements.
6.How does Aetrix verify that AUIRF1010EZSTRL is sourced from the original manufacturer or authorized distributors?
All AUIRF1010EZSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1010EZSTRL meets industry standards.
7.What is the process for return or replacement of AUIRF1010EZSTRL?
All AUIRF1010EZSTRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1010EZSTRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF1010EZSTRL part is unused and in its original packaging.
Return procedure for AUIRF1010EZSTRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AUIRF1010EZSTRL Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

