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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF1010ZS

Name: AUIRF1010ZS
Brand: Infineon Technologies
SKU: AUIRF1010ZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF1010ZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF1010ZS.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF1010ZS from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 55 V V_DS, 7.5 mΩ R_DS(on) max at V_GS = 10 V and 75 A package-limited continuous drain current. It operates up to 175°C junction temperature and supports repetitive avalanche, targeting high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the AUIRF1010ZS datasheet, AUIRF1010ZS pinout, AUIRF1010ZS application, or AUIRF1010ZS equivalent, key selection criteria include its 55 V breakdown voltage, ultra-low on-resistance, 175°C thermal rating, fast switching (t_r = 150 ns), and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs advanced silicon process technology to minimize conduction loss while maintaining robust avalanche capability. Its 7.5 mΩ R_DS(on) at 10 V gate drive enables high-current switching with low I²R losses, and the 175°C maximum junction temperature supports operation in under-hood environments without derating.

The device features a fast intrinsic body diode (t_rr = 22–33 ns, Q_rr = 15–23 nC) and low gate charge (Q_g = 63–95 nC), enabling efficient hard-switching in synchronous rectifiers and H-bridge motor drivers. Repetitive avalanche energy (E_AR) is thermally limited and validated per Fig. 12a–12b and 15–16 of the datasheet.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; defines use in 48 V automotive systems and 24 V industrial rails.
R_DS(on) max	7.5 mΩ @ V_GS = 10 V, I_D = 75 A - Enables <1.2 W conduction loss at 40 A, critical for thermal management in compact modules.
I_D (package)	75 A @ T_C = 25°C - Package-limited continuous current; requires heatsinking for sustained >50 A operation.
T_J max	+175°C - Allows direct mounting on hot surfaces (e.g., transmission control units) without external thermal derating.
E_AS tested	180 mJ - Single-pulse avalanche energy verified per test conditions (L = 0.05 mH, I_AS = 75 A); supports unclamped inductive turn-off.
Q_g	63–95 nC - Gate charge range determines driver strength requirement; 95 nC upper limit sets minimum gate drive current for <100 ns switching.
t_r/t_f	150 ns / 92 ns - Rise/fall times define minimum PWM frequency capability (~200 kHz practical limit with 50% duty cycle).

Pinout & Package

Package: D2PAK (TO-263), surface-mount with exposed drain pad for thermal conduction. Dimensions conform to JEDEC MO-211AB standard; recommended footprint per Infineon AN-994.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; gate threshold 2.0–4.0 V ensures noise immunity in automotive EMI environments.
Pin 2 (D)	Drain	Main power output node; electrically connected to exposed metal tab - must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return path and reference for gate drive; internal source inductance (L_S = 7.5 nH) impacts high-di/dt switching stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.5 mΩ max enables <0.5 W conduction loss at 25 A, reducing heatsink size by ≥40% vs. legacy 12 mΩ parts.
175°C junction rating	Eliminates need for thermal derating in ambient >125°C environments, e.g., near exhaust manifolds or turbochargers.
Repetitive avalanche capability	Validated per Fig. 15–16; allows safe operation during load dump or inductive kickback without snubber circuits.
Fast body diode	t_rr = 22–33 ns and Q_rr = 15–23 nC reduce switching loss and EMI in synchronous buck topologies.
AEC-Q101 qualified	Passed stress tests including HTGB, HTRB, and temperature cycling - certified for safety-critical engine control modules.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 60 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Main power switch in low-side driver configuration; handles repetitive inductive turn-off with no external flyback diode required.

Use Value: 175°C rating prevents thermal shutdown during extended idling; 7.5 mΩ R_DS(on) limits injector coil heating to <1.5°C/W, ensuring precise pulse-width modulation.

Use Scenario: PWM-controlled 24 V blower motor delivering 500–1000 W airflow in cabin climate systems.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in 3-phase inverter; leverages fast t_r/t_f for 20 kHz carrier frequency to suppress audible noise.

Use Value: Low Q_g (63–95 nC) reduces gate driver power consumption by 35% vs. comparable 10 mΩ MOSFETs, extending MCU battery runtime.

48 V Mild Hybrid DC-DC Converter

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Synchronous rectifier in bidirectional 48 V/12 V buck-boost converter handling 100 A peak current.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; body diode conduction minimized via precise gate timing due to low Q_rr.

Use Value: 180 mJ tested E_AS absorbs transient overvoltage during 48 V bus fault events, eliminating need for TVS clamping.

Use Scenario: Phase-leg switch in 3-phase EPS motor driver operating at 150 A peak and 10 kHz PWM.

IC Role / Device Role / Timing Role: High-current power stage switch; uses exposed drain pad for direct thermal coupling to aluminum heatsink.

Use Value: R_θJC = 1.11 °C/W enables 75 A continuous operation at T_C = 100°C - meets ISO 16750-4 vibration and thermal shock requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	40 V V_DS, 1.2 mΩ R_DS(on), DFN8 5×6 mm package	Limited to 40 V systems; unsuitable for 48 V mild hybrid or load-dump tolerant designs	Select only for space-constrained 12/24 V applications where voltage margin <10 V is acceptable
IRFS7537PBF	60 V V_DS, 5.2 mΩ R_DS(on), TO-220 package, non-automotive grade	No AEC-Q101 qualification; R_θJA = 62 °C/W limits power density in sealed enclosures	Acceptable for industrial prototypes but not for production automotive ECUs requiring PPAP compliance

Compared with STL220N4LF8AG and IRFS7537PBF, AUIRF1010ZS uniquely balances 55 V rating, AEC-Q101 qualification, D2PAK thermal performance, and validated repetitive avalanche - making it the only option for production-grade 48 V automotive power stages requiring zero-failure field reliability.

Availability

AUIRF1010ZS is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRF1010ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

The AUIRF1010ZS belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

What is the maximum continuous drain current for AUIRF1010ZS at 100°C case temperature?

The datasheet specifies 66 A continuous drain current at T_C = 100°C and V_GS = 10 V (silicon-limited). This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and assumes adequate PCB copper area or heatsink interface per AN-994 layout guidelines.

Is AUIRF1010ZS pin-compatible with AUIRF1010Z or AUIRF1010ZL?

No - AUIRF1010ZS uses D2PAK (TO-263) package with 3-pin surface-mount footprint, while AUIRF1010Z is TO-220AB (through-hole) and AUIRF1010ZL is TO-262 (lead-frame variant). Pin functions (G/D/S) are identical, but mechanical mounting, thermal path, and PCB layout are not interchangeable.

Does AUIRF1010ZS require a gate resistor for automotive EMI compliance?

Yes - a 6.8 Ω gate resistor is specified in the datasheet for switching time measurements (td(off), tf) and EMI reduction. This value damps gate ringing caused by L_S (7.5 nH) and parasitic capacitances, meeting CISPR 25 Class 5 radiated emissions limits when combined with proper PCB grounding and shielded gate traces.

Can AUIRF1010ZS be used in linear mode (non-saturated amplification)?

No - this MOSFET is optimized for switching operation only. Its Safe Operating Area (SOA) curve (Fig. 8) shows severe derating above 10 V V_DS at DC, and linear-mode operation risks thermal runaway due to positive temperature coefficient of R_DS(on); it lacks SOA validation for analog amplifier use.

AUIRF1010ZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRF1010ZS FAQ

1.How can I place an order for AUIRF1010ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF1010ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF1010ZS reliable?

The price and inventory of AUIRF1010ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1010ZS is usually 5 days.

3.What payment methods are accepted for AUIRF1010ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1010ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF1010ZS?

AUIRF1010ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF1010ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF1010ZS?

For technical support, including AUIRF1010ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1010ZS requirements.

6.How does Aetrix verify that AUIRF1010ZS is sourced from the original manufacturer or authorized distributors?

All AUIRF1010ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1010ZS meets industry standards.

7.What is the process for return or replacement of AUIRF1010ZS?

All AUIRF1010ZS units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1010ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF1010ZS part is unused and in its original packaging.

Return procedure for AUIRF1010ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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