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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF1010ZSTRL

Name: AUIRF1010ZSTRL
Brand: Infineon Technologies
SKU: AUIRF1010ZSTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF1010ZSTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF1010ZSTRL.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

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Product details

Overview

AUIRF1010ZSTRL from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 55 V V_DS, 7.5 mΩ R_DS(on) max at V_GS = 10 V and 75 A continuous drain current (package-limited), operating up to 175°C junction temperature. It delivers fast switching (t_r = 150 ns, t_f = 92 ns), robust repetitive avalanche capability (E_AR specified), and is qualified per AEC-Q101 for engine control units and DC-DC converters.

For engineers reviewing the AUIRF1010ZSTRL datasheet, AUIRF1010ZSTRL pinout, AUIRF1010ZSTRL application, or AUIRF1010ZSTRL equivalent, key selection criteria include its 7.5 mΩ on-resistance at 10 V gate drive, 360 A pulsed drain rating, 1.11 °C/W junction-to-case thermal resistance, and validated performance under unclamped inductive switching with I_AS = 75 A.

Technical Context

This MOSFET employs Infineon's advanced silicon process to minimize conduction losses while maintaining high ruggedness. Its 175°C maximum junction temperature enables operation in under-hood environments without derating, and its low C_iss (2840 pF) and C_oss (420 pF at V_DS = 25 V) support efficient high-frequency switching in synchronous rectifiers and motor drives.

The device features a fully characterized body diode with t_rr = 22–33 ns and Q_rr = 15–23 nC, enabling snubberless operation in hard-switched topologies. Repetitive avalanche energy (E_AR) is thermally limited and validated per Fig. 12a–12b and 15–16, with safe operation defined by transient thermal impedance Z_thJC and duty-cycle-dependent I_AV limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with load-dump margin.
R_DS(on) max	7.5 mΩ @ V_GS = 10 V, I_D = 75 A - Enables <1 W conduction loss at 75 A, critical for high-current power stages.
I_D (pkg-limited)	75 A @ T_C = 25°C - Sustained current capability constrained by D2PAK package thermal interface, not silicon.
t_r/t_f	150 ns / 92 ns @ V_DD = 28 V, I_D = 75 A, R_G = 6.8 Ω - Supports >100 kHz switching in DC-DC converters with low switching loss.
E_AS tested	180 mJ @ L = 0.05 mH, I_AS = 75 A, V_GS = 10 V - Confirmed single-pulse avalanche robustness for inductive turn-off transients.
R_θJC	1.11 °C/W - Enables direct heatsink mounting with predictable thermal drop; supports 140 W P_D at T_C = 25°C.
Q_g	63–95 nC - Gate charge level requiring ~0.6–1.0 A peak gate driver current for 100 ns rise time.

Pinout & Package

Package: D2PAK (TO-263), surface-mount, isolated tab (drain-connected), 3-pin configuration with standard footprint per AN-994.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V for full enhancement; ±20 V absolute max rating prevents ESD damage.
Pin 2 (D)	Drain	Main power output terminal; electrically connected to exposed metal tab; must be insulated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return path and reference for gate drive; internal source inductance (L_S = 7.5 nH) affects high-di/dt switching behavior.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.5 mΩ max enables <0.6 W conduction loss at 40 A, reducing thermal design burden in compact modules.
175°C rated junction	Allows full-rated operation in engine bay environments without current derating, unlike 150°C industrial MOSFETs.
Repetitive avalanche rated	Validated E_AR and I_AV curves (Figs. 12c, 15, 16) permit reliable unclamped inductive switching in motor phase-legs.
Fast body diode	t_rr = 22–33 ns and Q_rr = 15–23 nC reduce reverse recovery loss and EMI in synchronous buck and half-bridge topologies.
AEC-Q101 qualified	Passed stress tests including HTGB, HTRB, TC, UHAST, and ESD per automotive reliability standards.

Applications

Engine Control Unit (ECU) High-Side Switch

Automotive DC-DC Converter Primary Switch

Use Scenario: Controlling fuel injector solenoid current in gasoline direct injection systems with 12 V nominal supply and 100 V load dump transients.

IC Role / Device Role / Timing Role: High-side power switch handling 15–25 A peak pulses at 1–10 Hz, with fast turn-on/off to meet precise fuel metering timing.

Use Value: 7.5 mΩ R_DS(on) minimizes voltage drop during long-duration pulses, preserving solenoid force; 175°C rating avoids thermal shutdown during sustained idle operation.

Use Scenario: Primary-side switching element in 12 V to 48 V bidirectional DC-DC converter for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 100–200 kHz with 50% duty cycle, conducting up to 75 A average current.

Use Value: Low Q_g (63–95 nC) and fast t_r/t_f reduce gate drive loss and switching transition time, improving efficiency above 95% at full load.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) AC-DC Front-End

Use Scenario: Half-bridge leg in three-phase inverter driving 3 kW brushless DC motor in EPS system, subject to high vibration and ambient temperatures up to 125°C.

IC Role / Device Role / Timing Role: Low-side switching device with body diode conducting freewheeling current during PWM dead-time.

Use Value: Fast, soft-recovery body diode (t_rr = 22–33 ns) suppresses voltage spikes and reduces EMI, eliminating need for external anti-parallel diodes.

Use Scenario: Active clamp switch in totem-pole PFC stage of 6.6 kW OBC, switching at 65 kHz with high dv/dt and bidirectional current.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive unclamped inductive energy during zero-voltage switching transitions.

Use Value: Validated repetitive avalanche capability (E_AR, I_AV) ensures robustness against transient overvoltage events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55 V, 2.2 mΩ R_DS(on), DFN8 5×6 mm package, 175°C rated, but lower I_D (120 A silicon-limited, 80 A pkg-limited).	Surface-mount only; no isolated tab; requires PCB copper area for thermal management instead of mechanical heatsink.	Select when board space is constrained and thermal path is via PCB; avoid if mechanical heatsinking or high pulse current (>360 A) is required.
IRF1010EZPBF	55 V, 7.5 mΩ R_DS(on), TO-220AB package, 175°C rated, but not AEC-Q101 qualified; higher R_θJA (62 °C/W).	Industrial grade only; unsuitable for automotive under-hood use due to qualification gap and inferior thermal performance in still air.	Select only for cost-sensitive non-automotive applications where AEC-Q101 is not mandated and case temperature remains below 100°C.

Compared with STL220N5LF8AG and IRF1010EZPBF, AUIRF1010ZSTRL uniquely combines AEC-Q101 qualification, D2PAK thermal interface flexibility, and validated repetitive avalanche performance-making it the only choice for safety-critical automotive power stages requiring both ruggedness and thermal headroom.

Availability

AUIRF1010ZSTRL is available at Aetrix Electronics and suitable for engine control units, electric power steering inverters, and on-board chargers requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRF1010ZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global automotive market leadership.

The AUIRF1010Z series belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine management, transmission control, and electrified powertrain subsystems.

FAQ

Is AUIRF1010ZSTRL pin-compatible with AUIRF1010ZS?

Yes - AUIRF1010ZSTRL and AUIRF1010ZS share identical D2PAK (TO-263) package dimensions, pinout (G-D-S), and thermal pad layout. The "T" suffix denotes tape-and-reel packaging (800 pcs/reel), while "S" indicates tube packaging (50 pcs/tube); electrical and thermal specifications are identical.

What is the maximum recommended gate resistor for hard-switching at 150 kHz?

For 150 kHz hard-switching with 75 A load, a gate resistor of 4.7–6.8 Ω is recommended to balance switching speed (t_r/t_f < 200 ns) and gate oscillation damping. Lower values risk ringing due to L_S + L_G interaction; higher values increase switching loss beyond 0.5 W per cycle at full load.

Does AUIRF1010ZSTRL require a negative gate turn-off voltage?

No - the device has a gate threshold voltage (V_GS(th)) of 2.0–4.0 V and is fully enhanced at +10 V. Negative turn-off (e.g., –5 V) is not required for reliable operation but may improve noise immunity in high-dv/dt environments; gate drive must stay within ±20 V absolute maximum rating.

Can AUIRF1010ZSTRL replace IRF1010E in existing designs?

No - although both are 55 V N-channel MOSFETs, IRF1010E uses TO-220AB package with different pinout (D-G-S), lacks AEC-Q101 qualification, and has higher R_DS(on) (12 mΩ). Mechanical, thermal, and qualification mismatches preclude drop-in replacement without layout and reliability revalidation.

AUIRF1010ZSTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRF1010ZSTRL FAQ

1.How can I place an order for AUIRF1010ZSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF1010ZSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF1010ZSTRL reliable?

The price and inventory of AUIRF1010ZSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1010ZSTRL is usually 5 days.

3.What payment methods are accepted for AUIRF1010ZSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1010ZSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF1010ZSTRL?

AUIRF1010ZSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF1010ZSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF1010ZSTRL?

For technical support, including AUIRF1010ZSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1010ZSTRL requirements.

6.How does Aetrix verify that AUIRF1010ZSTRL is sourced from the original manufacturer or authorized distributors?

All AUIRF1010ZSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1010ZSTRL meets industry standards.

7.What is the process for return or replacement of AUIRF1010ZSTRL?

All AUIRF1010ZSTRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1010ZSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF1010ZSTRL part is unused and in its original packaging.

Return procedure for AUIRF1010ZSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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