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Infineon Technologies AUIRF1018E

Part No.:
AUIRF1018E
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixAUIRF1018E.pdf
Description:
MOSFET N-CH 60V 79A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,206

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Product details

Overview

AUIRF1018E from Infineon Technologies (formerly International Rectifier) is an automotive-qualified single N-channel enhancement-mode HEXFET power MOSFET rated for 60 V VBRDSS, 8.4 mΩ RDS(on) at VGS = 10 V, and 79 A continuous drain current at TC = 25°C. It is housed in a TO-220AB package and certified to AEC-Q101 for under-hood automotive power switching applications including motor control and DC-DC conversion.

For engineers reviewing the AUIRF1018E datasheet, AUIRF1018E pinout, AUIRF1018E application, or AUIRF1018E equivalent, key selection criteria include its 60 V breakdown voltage, low 8.4 mΩ on-resistance, 46 nC gate charge, thermal resistance of 1.32 °C/W (junction-to-case), and AEC-Q101 qualification for automotive reliability.

Technical Context

This MOSFET operates as a unidirectional high-current switch in hard-switched topologies. Its 60 V VBRDSS supports 48 V system rails and transient overvoltage tolerance up to 65 V. The 8.4 mΩ RDS(on) at 10 V gate drive enables efficient conduction in high-duty-cycle loads.

With 46 nC total gate charge and 12 nC gate-to-drain charge, it balances switching speed and EMI control in 20–100 kHz power stages. The 1.32 °C/W Rth(JC) allows 110 W power dissipation at TC = 25°C when mounted on a heatsink with sufficient thermal interface.

Key Specifications

ParameterValue and Actual Design Meaning
VBRDSS60 V - Withstands 60 V drain-to-source blocking voltage, suitable for 48 V automotive systems with ISO 7637-2 pulse tolerance.
RDS(on) @ VGS = 10 V8.4 mΩ - Enables ≤0.5 W conduction loss at 8 A DC load, critical for thermally constrained engine bay modules.
ID @ TC = 25°C79 A - Maximum continuous drain current with case temperature maintained at 25°C using adequate heatsinking.
Qg Typ46.0 nC - Total gate charge determines drive strength requirement; ~2.3 A peak gate current needed for 20 ns rise time.
Rth(JC)1.32 °C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for target junction temperature.
PD @ TC = 25°C110 W - Maximum power dissipation achievable only when case is held at 25°C via active cooling or large copper area.

Pinout & Package

TO-220AB package: three-terminal through-hole outline with isolated tab (drain-connected), standard leadform, and center-gate pin configuration.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current-carrying terminal, electrically connected to metal tabMust be electrically isolated from heatsink unless circuit design requires common-drain topology; thermal path to heatsink is primary.
SourceReference node for gate drive and current return pathServes as ground reference for gate driver IC; layout must minimize source inductance to avoid switching oscillation.
GateControl electrode for channel formationRequires low-impedance drive path; 20 V absolute maximum rating limits compatible driver selection (e.g., IR2110, UCC27531).

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive temperature cycling, humidity, and mechanical stress per JESD22-A108; supports 15-year vehicle service life.
Low RDS(on) (8.4 mΩ)Reduces conduction losses by >30% vs. legacy 12 mΩ 60 V MOSFETs in 12–48 V motor drivers, improving efficiency at 10–50 A loads.
High ID rating (79 A)Supports peak currents up to 120 A in pulse-width modulated motor phases without derating beyond 100°C case temperature.
Optimized Qgd/Qg ratio (0.26)Improves hard-switching robustness by reducing Miller-induced shoot-through risk during high dv/dt transitions.

Applications

Automotive BLDC Motor Driver48 V DC-DC Converter Primary Switch

Use Scenario: High-reliability 3-phase inverter for HVAC blower motors in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side switching element in each phase leg, commutated at 10–20 kHz with 600 V bus transients.

Use Value: 8.4 mΩ RDS(on) reduces heat generation in confined dash-mounted enclosures, enabling passive cooling in 300 W designs.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V buck converter for ADAS camera power supply.

IC Role / Device Role / Timing Role: Main power switch operating in continuous conduction mode at 200 kHz with 60 V input transients.

Use Value: 46 nC Qg allows fast turn-on with low-loss gate driving, minimizing dead-time losses while maintaining <100 ns propagation delay.

Engine Control Unit (ECU) Fuel Injector DriverElectric Power Steering (EPS) Phase Leg

Use Scenario: High-side or low-side driver for solenoid-based fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Fast-switching current sink with 1 µs turn-off capability to meet precise fuel metering timing requirements.

Use Value: 12 nC Qgd ensures clean turn-off edge under 60 V inductive kickback, reducing snubber component count and board space.

Use Scenario: Half-bridge leg in 3-phase EPS motor controller operating at ambient temperatures up to 125°C.

IC Role / Device Role / Timing Role: High-current switching device handling 50–70 A peak phase current with PWM frequencies up to 15 kHz.

Use Value: 1.32 °C/W Rth(JC) enables operation at TJ ≤ 150°C with minimal heatsink mass, meeting EPS packaging constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6F7RDS(on) = 3.3 mΩ @ 10 V; Qg = 105 nC; TO-220FP package (isolated tab)Higher conduction efficiency but slower switching; better suited for low-frequency, high-current linear regulation.Select when lowest possible I²R loss dominates over switching loss and gate drive capability permits higher Qg.
IXTH76N60L2RDS(on) = 12.5 mΩ @ 10 V; Qg = 32 nC; TO-247AC package; 600 V ratingLower gate charge improves EMI profile but higher RDS(on) increases conduction loss; rated for 600 V, not automotive qualified.Select only for non-automotive 48 V systems where AEC-Q101 is not required and lower gate drive demand is prioritized.

Compared with STL220N6F7 and IXTH76N60L2, AUIRF1018E offers the optimal balance of low RDS(on), moderate Qg, and full AEC-Q101 compliance-making it uniquely suitable for cost-sensitive, thermally constrained automotive switching applications requiring production-grade reliability.

Availability

AUIRF1018E is available at Aetrix Electronics and suitable for automotive BLDC motor drivers, 48 V DC-DC converters, and engine control unit (ECU) injector drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRF1018E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with vertically integrated Si process development and packaging capabilities.

AUIRF1018E belongs to Infineon's automotive-qualified HEXFET power MOSFET product line, designed specifically for high-reliability 12 V–48 V power switching in engine, chassis, and body electronics.

FAQ

Is AUIRF1018E pin-compatible with standard TO-220AB MOSFETs?

Yes, AUIRF1018E uses the industry-standard TO-220AB outline with Drain–Gate–Source pin order (viewed from front, leads down). Its pinout matches IRFZ44N, STP60NF06, and other common TO-220AB N-channel MOSFETs, enabling direct PCB footprint reuse in automotive redesigns.

What is the maximum safe operating junction temperature for AUIRF1018E?

The absolute maximum junction temperature is 175°C per the AEC-Q101 stress test conditions. For reliable long-term operation in automotive environments, design should limit TJ to ≤150°C using thermal modeling that accounts for Rth(JC) = 1.32 °C/W and actual heatsink Rth(CA).

Does AUIRF1018E require a gate resistor for automotive EMI compliance?

Yes-a 10–22 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET output capacitance. This controls dv/dt during switching and meets CISPR 25 Class 5 radiated emissions limits for powertrain modules.

Can AUIRF1018E be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its positive temperature coefficient of RDS(on) enables current sharing above 100°C; however, gate drive skew must be ≤5 ns and source inductance balanced to prevent dynamic imbalance at high di/dt.

AUIRF1018E Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id:
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
69 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
2290 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

AUIRF1018E FAQ

1.How can I place an order for AUIRF1018E through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF1018E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF1018E reliable?

The price and inventory of AUIRF1018E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1018E is usually 5 days.

3.What payment methods are accepted for AUIRF1018E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1018E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF1018E?

AUIRF1018E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF1018E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF1018E?

For technical support, including AUIRF1018E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1018E requirements.

6.How does Aetrix verify that AUIRF1018E is sourced from the original manufacturer or authorized distributors?

All AUIRF1018E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1018E meets industry standards.

7.What is the process for return or replacement of AUIRF1018E?

All AUIRF1018E units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1018E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF1018E part is unused and in its original packaging.

Return procedure for AUIRF1018E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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