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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF1324

Name: AUIRF1324
Brand: Infineon Technologies
SKU: AUIRF1324
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF1324

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AUIRF1324.pdf

Description:: MOSFET N-CH 24V 195A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,035

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Product details

Overview

AUIRF1324 from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in TO-220AB package, designed for high-current DC-DC conversion and motor control in engine management and battery systems. It features 24 V V_DSS, 1.2 mΩ typ. R_DS(on), 195 A package-limited continuous drain current at T_C = 25°C, and 175°C maximum junction temperature - enabling robust operation in under-hood automotive power stages.

For engineers reviewing the AUIRF1324 datasheet, AUIRF1324 pinout, AUIRF1324 application, or AUIRF1324 equivalent, key selection criteria include its ultra-low on-resistance at 10 V gate drive, repetitive avalanche capability up to T_jmax, RoHS-compliant lead-free construction, and AEC-Q101 qualification for automotive reliability validation.

Technical Context

This MOSFET employs advanced silicon process technology to minimize conduction losses while maintaining fast switching (t_r = 190 ns, t_f = 120 ns) and low gate charge (Q_g = 160–240 nC). Its integrated body diode supports synchronous rectification and unclamped inductive switching with validated EAS = 270 mJ (T_J = 25°C).

The device operates with a gate threshold voltage of 2.0–4.0 V and exhibits stable R_DS(on) over temperature (normalized to 1.5× at 175°C), supported by low thermal resistance R_θJC = 0.50°C/W - critical for thermally constrained automotive modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	24 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V automotive systems with load-dump transients.
R_DS(on) typ.	1.2 mΩ - Enables <1.9 W conduction loss at 195 A; reduces heatsink requirements in high-current battery disconnect switches.
I_D (Package)	195 A @ T_C = 25°C - Package-limited continuous current; sets practical PCB copper and thermal pad design constraints.
EAS	270 mJ - Single-pulse avalanche energy rating; allows reliable operation during inductive turn-off without external snubbers.
Q_g	160–240 nC - Total gate charge determines driver strength requirement; impacts switching loss and gate driver IC selection (e.g., IR21xx series).
T_J max	175°C - Junction temperature limit enabling sustained operation in hot under-hood environments without derating.
AEC-Q101	Qualified - Meets automotive stress test standards including HBM Class H3A, CDM Class C5, and temperature cycling per AEC-Q101-001/002/005.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting. Thermal path optimized via metal tab soldered directly to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically connected to metal tab; requires insulated mounting or direct thermal interface; carries full load current.
Source	Power return / reference node	Common return path for load current; referenced for gate drive; used in current-sense configurations.
Gate	Control input	High-impedance MOSFET control terminal; requires low-inductance gate drive trace and appropriate series resistance (e.g., 10–25 Ω) to damp ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.2 mΩ typ. at V_GS = 10 V - Reduces I²R losses by >40% vs. legacy 24 V MOSFETs, improving efficiency in 48 V mild-hybrid DC-DC converters.
Repetitive avalanche rated	Validated up to T_jmax - Eliminates need for external clamping diodes in solenoid drivers and fuel injector circuits with inductive kickback.
175°C operation	Rated junction temperature - Supports placement near heat sources (e.g., engine ECU power stages) without forced air cooling.
Lead-free & RoHS compliant	Meets automotive ELV Directive - Ensures compliance in global vehicle production with no exemption required for Pb content.
Fast switching	t_r/t_f = 190/120 ns - Enables >100 kHz PWM operation in active front-end rectifiers while minimizing overlap losses.

Applications

Engine Start-Stop Control

12 V Battery Disconnect Switch

Use Scenario: High-current MOSFET used to enable/disable starter motor power path during automatic engine restart in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Main power switch controlling 200+ A cranking current; must survive repeated 10 ms pulses with 450 A peak surge.

Use Value: 1.2 mΩ R_DS(on) limits voltage drop to <0.25 V at 200 A, preserving battery voltage during cold-cranking while avoiding thermal runaway.

Use Scenario: Isolation switch between main battery and auxiliary loads (e.g., infotainment, ADAS ECUs) during key-off to prevent parasitic drain.

IC Role / Device Role / Timing Role: Bidirectional blocking device with body diode supporting reverse-current protection; activated only during sleep mode transitions.

Use Value: AEC-Q101 qualification ensures >10-year reliability under thermal cycling (-40°C to +125°C ambient), critical for always-on vehicle architectures.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) DC Link Switch

Use Scenario: Half-bridge high-side switch in 3-phase inverter driving 12 V EPS assist motor with peak currents >150 A.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET requiring bootstrap gate drive; handles repetitive 10–50 kHz PWM with fast dv/dt immunity.

Use Value: Low Q_gd (49 nC) minimizes Miller-induced shoot-through risk, improving inverter fault tolerance during transient load changes.

Use Scenario: Primary switching element in bidirectional OBC DC-DC stage converting between 400 V traction battery and 12 V auxiliary system.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter secondary side; conducts high-frequency AC current with low conduction loss.

Use Value: C_{oss eff}(TR) = 4490 pF enables predictable zero-voltage switching (ZVS) timing across 20–100 kHz, reducing EMI and improving efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4L10AG	40 V V_DSS, 1.0 mΩ R_DS(on), DFN5x6 package - higher voltage rating but lower thermal mass and no isolated tab.	Preferred for space-constrained SMT designs (e.g., compact DC-DC modules); unsuitable for bolt-down heatsinking or >150 A continuous use.	Select when board area is limited and thermal interface uses thermal vias instead of mechanical mounting.
ON Semiconductor NTMFS4C09NT1G	30 V V_DSS, 1.3 mΩ R_DS(on), SO-8FL package - smaller footprint, lower Q_g (110 nC), but 120 A package limit and no AEC-Q101 documentation in public datasheet.	Suitable for non-safety-critical 12 V subsystems (e.g., HVAC blower); not qualified for engine bay or safety-related functions.	Choose only for cost-sensitive interior modules where AEC-Q101 is not mandated by OEM specification.

Compared with STL220N4L10AG and NTMFS4C09NT1G, AUIRF1324 offers superior thermal management via TO-220AB's isolated tab and verified AEC-Q101 compliance - making it the only option qualified for under-hood, high-reliability, high-current automotive power switching.

Availability

AUIRF1324 is available at Aetrix Electronics and suitable for engine control units, battery management systems, and electric power steering modules requiring stable component supply across multi-year automotive production cycles.

Supply support for AUIRF1324 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

AUIRF1324 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-reliability switching in 12 V and 48 V vehicle electrical architectures.

FAQ

What is the maximum continuous drain current for AUIRF1324 at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 249 A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating remains 195 A regardless of temperature - meaning thermal design must ensure the package does not exceed its current-carrying capacity due to bond wire limitations and mounting constraints.

Does AUIRF1324 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control dV/dt and suppress oscillation. Based on Q_g = 160–240 nC and typical gate driver rise time targets, a 10–25 Ω resistor is recommended. Lower values improve switching speed but increase EMI risk; higher values reduce switching loss but raise gate drive power dissipation in high-frequency applications.

Can AUIRF1324 be used in parallel configurations for higher current handling?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with temperature) enables inherent current sharing. Parallel operation requires matched layout (symmetrical trace lengths, identical thermal paths), individual gate resistors, and careful attention to source inductance imbalance to avoid dynamic current skew during switching transitions.

Is the TO-220AB package electrically isolated, and how is the drain terminal accessed?

Yes - the TO-220AB variant features an electrically isolated metal tab that is internally connected to the drain. The drain is accessible both through the tab (for heatsink mounting) and the leaded pin (for PCB routing). This isolation allows direct mounting to grounded heatsinks without shorting the drain to chassis ground.

AUIRF1324 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 195A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7590 pF @ 24 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

AUIRF1324 FAQ

1.How can I place an order for AUIRF1324 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF1324 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF1324 reliable?

The price and inventory of AUIRF1324 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1324 is usually 5 days.

3.What payment methods are accepted for AUIRF1324?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1324 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF1324?

AUIRF1324 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF1324 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF1324?

For technical support, including AUIRF1324 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1324 requirements.

6.How does Aetrix verify that AUIRF1324 is sourced from the original manufacturer or authorized distributors?

All AUIRF1324 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1324 meets industry standards.

7.What is the process for return or replacement of AUIRF1324?

All AUIRF1324 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1324, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF1324 part is unused and in its original packaging.

Return procedure for AUIRF1324:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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