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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF1324S-7P

Name: AUIRF1324S-7P
Brand: Infineon Technologies
SKU: AUIRF1324S-7P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF1324S-7P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: AUIRF1324S-7P.pdf

Description:: MOSFET N-CH 24V 240A D2PAK

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Product details

Overview

AUIRF1324S-7P from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in D2PAK-7L package, rated for 24 V V_DS, 0.8 mΩ typ. R_DS(on) at V_GS = 10 V, 175°C junction operation, and 240 A continuous package-limited drain current. It serves as a high-current synchronous rectifier or low-side switch in 12 V/24 V automotive power distribution systems including starter motor drivers and battery disconnect modules.

For engineers reviewing the AUIRF1324S-7P datasheet, AUIRF1324S-7P pinout, AUIRF1324S-7P application, or AUIRF1324S-7P equivalent, key selection criteria include its ultra-low on-resistance under high-temperature operation, validated repetitive avalanche capability up to T_jmax, and automotive qualification per AEC-Q101 standards - critical for engine control unit (ECU) power stages and electric power steering (EPS) H-bridge legs.

Technical Context

This device uses Infineon's HEXFET® process to achieve sub-1 mΩ on-resistance in a thermally enhanced D2PAK-7L package with five parallel drain pins and isolated gate/source terminals. Its 175°C rated junction temperature enables sustained operation in under-hood environments where ambient exceeds 105°C.

The MOSFET supports fast switching (t_r = 240 ns, t_f = 93 ns) and exhibits robust unclamped inductive switching behavior with EAS = 230 mJ and I_AR = 160 A, verified under standardized avalanche test conditions (L = 0.018 mH, R_G = 25 Ω, T_j initial = 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	24 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails without derating.
R_DS(on) max	1.0 mΩ @ V_GS = 10 V, I_D = 160 A - Enables <1.6 W conduction loss at 160 A, reducing thermal load in high-current paths.
I_D (Package)	240 A @ T_C = 25°C - Determined by leadframe and bond-wire limits; defines maximum safe continuous current with proper PCB copper area.
EAS	230 mJ - Single-pulse avalanche energy rating ensures survivability during inductive load turn-off transients in motor drives.
T_J max	+175°C - Allows uninterrupted operation in high-ambient zones such as engine compartments and transmission control units.
Q_g	252 nC max - Gate charge value directly impacts driver sizing and switching loss in PWM applications above 10 kHz.
R_θJC	0.50 °C/W - Low junction-to-case thermal resistance enables efficient heat transfer to heatsink or copper plane in surface-mount layout.

Pinout & Package

Supplied in D2PAK-7L (TO-263-7) package with exposed drain pad and seven leads: five parallel drain terminals (Pins 2, 3, 5, 6, 7), one gate (Pin 1), and one source (Pin 4). The package supports high-current routing and low-inductance mounting via large copper pour on PCB backside.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring ≥10 V drive for full enhancement; isolated from power path to prevent coupling noise into gate loop.
Pins 2, 3, 5, 6, 7	Drain	Five parallel terminals reduce current density and parasitic inductance; all internally connected to die drain metallization and exposed copper pad.
Pin 4	Source	Reference node for gate drive and current sensing; tied to power ground plane with minimal trace length to suppress shoot-through risk.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.8 mΩ typ. at 10 V gate drive - reduces conduction losses by >35% vs. legacy 40 V automotive MOSFETs in same package.
175°C junction rating	Rated operation up to +175°C - eliminates need for external thermal derating in under-hood modules operating at T_A = 125°C.
Repetitive avalanche capability	Validated per AEC-Q101 - allows safe operation in unclamped inductive switching events common in solenoid and motor control.
Fast switching performance	t_r = 240 ns, t_f = 93 ns @ I_D = 160 A - supports high-frequency PWM (>20 kHz) with minimized switching loss in DC-DC converters.
Automotive qualification	AEC-Q101 qualified - meets stress testing requirements for vibration, temperature cycling, and humidity exposure in safety-critical systems.

Applications

Engine Start/Stop System

Electric Power Steering (EPS)

Use Scenario: High-current battery isolation during engine cranking and restart cycles in 12 V micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side main switch controlling bidirectional current flow between starter battery and auxiliary loads.

Use Value: 0.8 mΩ R_DS(on) minimizes voltage drop during 400 A peak cranking pulses, preserving headlight brightness and ECU stability.

Use Scenario: H-bridge phase-leg switching in brushless DC motor drivers for column-assist EPS modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position enabling regenerative braking and precise torque control.

Use Value: 175°C rating ensures reliability during sustained 150 A motor stall conditions without thermal shutdown.

Transmission Control Unit (TCU)

12 V DC-DC Converter

Use Scenario: Solenoid actuator driver for hydraulic pressure control in automatic transmissions.

IC Role / Device Role / Timing Role: Unclamped inductive switch handling 300 ms pulses with 100 A peak current and fast turn-off.

Use Value: 230 mJ EAS rating prevents failure during rapid solenoid de-energization with no freewheeling diode.

Use Scenario: Primary-side synchronous rectifier in 12 V–5 V buck converter powering ADAS camera modules.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300 kHz with tight duty-cycle control.

Use Value: 252 nC Q_g enables use of compact gate drivers while maintaining <1.2% switching loss at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4L10AG	40 V V_DS, 0.95 mΩ R_DS(on), DFN5x6-8L package, 175°C rated	Lacks five-drain-pin configuration; lower thermal mass limits pulse current handling in starter applications	Preferred for space-constrained DC-DC converters where board area is prioritized over peak current capability
IPB180N04S4-02	40 V V_DS, 0.95 mΩ R_DS(on), TO-263-7 package, 175°C rated, 200 A package limit	Lower package current rating (200 A vs. 240 A); higher Q_g (320 nC) increases driver complexity	Suitable for EPS and TCU where gate drive resources allow higher Q_g, but not recommended for cranking-duty applications

Compared with STL220N4L10AG and IPB180N04S4-02, AUIRF1324S-7P delivers superior current capacity and lower switching loss in high-pulse automotive loads due to its optimized D2PAK-7L layout and 24 V-specific process tuning - making it the only option rated for 240 A continuous operation at T_C = 25°C.

Availability

AUIRF1324S-7P is available at Aetrix Electronics and suitable for engine start/stop systems, electric power steering modules, and transmission control units requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRF1324S-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRF1324S-7P belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems including powertrain and chassis electronics.

FAQ

What is the maximum continuous drain current for AUIRF1324S-7P at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 303 A (silicon-limited) and 240 A (package-limited), per the Absolute Maximum Ratings table. At elevated case temperatures, the package limit governs due to thermal saturation of the leadframe and bond wires - design must ensure PCB copper area and heatsinking maintain T_C ≤ 100°C for full 240 A operation.

Does AUIRF1324S-7P require a gate resistor for automotive PWM applications?

Yes - a gate resistor (typically 2.7 Ω to 10 Ω) is required to dampen ringing and control dV/dt during switching. The device's 252 nC total gate charge and low gate resistance (3.0 Ω typ.) make it susceptible to oscillation without proper gate drive impedance; values are validated in Figures 19a/b and application note AN-994 for D2PAK-7L layouts.

Can AUIRF1324S-7P be used in paralleled configurations?

No - the device is not characterized or qualified for parallel operation. Its positive R_DS(on) temperature coefficient (Fig. 4) provides inherent current sharing, but Infineon does not specify matching tolerances or recommend multi-device paralleling due to layout-dependent thermal gradients and gate drive skew risks in automotive environments.

Is the body diode of AUIRF1324S-7P suitable for reverse recovery in synchronous rectification?

Yes - the body diode has trr = 71–107 ns and Q_rr = 83–120 nC at T_J = 25°C, enabling use in synchronous buck topologies up to 300 kHz. However, its V_SD = 1.3 V forward drop increases conduction loss versus Schottky alternatives; optimal use requires gate timing that minimizes reverse recovery overlap in high-efficiency designs.

AUIRF1324S-7P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1mOhm @ 160A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 252 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 7700 pF @ 19 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

AUIRF1324S-7P FAQ

1.How can I place an order for AUIRF1324S-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF1324S-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF1324S-7P reliable?

The price and inventory of AUIRF1324S-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1324S-7P is usually 5 days.

3.What payment methods are accepted for AUIRF1324S-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1324S-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF1324S-7P?

AUIRF1324S-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF1324S-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF1324S-7P?

For technical support, including AUIRF1324S-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1324S-7P requirements.

6.How does Aetrix verify that AUIRF1324S-7P is sourced from the original manufacturer or authorized distributors?

All AUIRF1324S-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1324S-7P meets industry standards.

7.What is the process for return or replacement of AUIRF1324S-7P?

All AUIRF1324S-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1324S-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF1324S-7P part is unused and in its original packaging.

Return procedure for AUIRF1324S-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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