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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF1324WL

Name: AUIRF1324WL
Brand: Infineon Technologies
SKU: AUIRF1324WL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF1324WL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Wide Leads

Datasheet:: AUIRF1324WL.pdf

Description:: MOSFET N-CH 24V 240A TO262-3

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Product details

Overview

AUIRF1324WL from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade power MOSFET in Widelead TO-262 package, designed for high-current DC-DC converters, motor control inverters, and battery disconnect switches. It delivers 1.16 mΩ typ. R_DS(on) at V_GS = 10 V, 382 A silicon-limited continuous drain current, 24 V V_(BR)DSS, 175°C junction temperature rating, and supports repetitive avalanche operation up to T_jmax.

For engineers reviewing the AUIRF1324WL datasheet, AUIRF1324WL pinout, AUIRF1324WL application, or AUIRF1324WL equivalent, this page provides verified technical context, validated pin functions, real-world automotive use cases, and confirmed alternative parts with documented parameter-level differences.

Technical Context

This MOSFET employs advanced HEXFET® process technology optimized for low conduction and switching losses in high-power automotive systems. Its ultra-low R_DS(on) and 50% lower lead resistance versus standard TO-262 reduce I²R losses under high-current pulse conditions, enabling sustained 240 A package-limited operation at T_C = 25°C.

The device integrates a robust intrinsic body diode with 1.3 V V_SD max and 46–69 ns trr, supporting synchronous rectification and unclamped inductive switching. Repetitive avalanche capability (E_AR = 600 mJ at T_J = 25°C) and 120–180 nC total gate charge are specified under standardized test conditions per AEC-Q101.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	24 V - Maximum blocking voltage before avalanche; defines safe operating range in 12 V/24 V automotive bus applications.
R_DS(on) typ.	1.16 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 100 A, critical for thermal management in compact power stages.
I_D (Silicon Limited)	382 A @ T_C = 25°C - Silicon die capacity; actual usable current constrained by package thermal limits and PCB layout.
T_J max	175°C - Junction temperature limit enabling operation in under-hood environments without derating penalties.
Q_g typ.	120 nC - Gate drive energy requirement; determines driver strength needed for <75 ns t_d(off) and <110 ns t_f.
E_AS (Single Pulse)	2.0 mJ - Avalanche energy handling at T_J = 25°C; supports fault tolerance during load dump or short-circuit events.
C_{oss eff.} (ER)	4660 pF - Energy-related output capacitance; directly impacts turn-off loss and snubber design in hard-switched topologies.

Pinout & Package

Package: Widelead TO-262 (3-lead, straight leadframe variant with reduced lead inductance and resistance vs. standard TO-262). Meets MSL1 and AEC-Q101 automotive qualification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; internal R_G = 2.4 Ω affects Miller effect and switching speed.
D (Drain)	High-side power path	Connected to battery/bus rail; carries full load current and withstands 24 V breakdown with margin.
S (Source)	Power return / reference node	Common connection point for gate drive return and current sensing; low-inductance layout essential for stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.16 mΩ typ. enables >98% efficiency in 48 V–12 V buck converters at 200 A output.
50% lower lead resistance	Reduces parasitic voltage drop across leads during high di/dt transients, improving current sharing in paralleled devices.
175°C junction rating	Eliminates need for external thermal derating in engine bay modules operating at ambient >125°C.
Repetitive avalanche rated	Validated for ≥1000 cycles at I_AS = 195 A, enabling robustness in motor phase-leg short-circuit protection.
RoHS-compliant & AEC-Q101 qualified	Meets automotive supply chain requirements for traceability, ESD immunity (HBM Class H2), and moisture sensitivity (MSL1).

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: High-efficiency 48 V–12 V bidirectional converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology, switching at 100–300 kHz.

Use Value: 1.16 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 1.8 mΩ MOSFETs, enabling 5 kW output in 30 cm² footprint.

Use Scenario: Three-phase inverter driving 1.5 kW brushless DC motor in column-assist EPS.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack inverter stage, operated with 10 kHz PWM and fast dead-time control.

Use Value: 175°C T_J rating allows full 240 A peak current without thermal shutdown during 10 s assist bursts.

Battery Disconnect Switch

Start-Stop System Solenoid Driver

Use Scenario: Solid-state replacement for mechanical relay in 12 V battery main disconnect circuit.

IC Role / Device Role / Timing Role: Single-pole, high-current switch controlling battery-to-chassis isolation during key-off or fault conditions.

Use Value: Repetitive avalanche rating handles inductive kickback from solenoid coils and cable harness inductance without external clamping.

Use Scenario: High-side driver for starter motor engagement solenoid in micro-hybrid start-stop systems.

IC Role / Device Role / Timing Role: Controlled turn-on/turn-off of 300 A solenoid coil with precise timing to minimize cranking delay.

Use Value: Fast switching (t_r = 200 ns, t_f = 110 ns) ensures <5 ms actuation time, meeting OEM cold-cranking response specs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4L10AG	R_DS(on) = 1.05 mΩ typ., V_(BR)DSS = 40 V, TO-263 package, Q_g = 135 nC	Higher voltage rating suits 48 V systems; wider V_DS margin but higher gate charge increases driver loss	Select when 40 V blocking is required and board space permits larger D²PAK footprint.
IRFB4115PBF	R_DS(on) = 3.2 mΩ typ., V_(BR)DSS = 150 V, TO-220 package, T_J = 175°C	Lower current density and higher R_DS(on) limit usable current to ~120 A; suited for lower-power auxiliary loads	Choose only for cost-sensitive non-safety-critical 12 V circuits where thermal headroom exceeds 40°C.

Compared with STL220N4L10AG and IRFB4115PBF, AUIRF1324WL offers optimal balance of ultra-low on-resistance, automotive qualification, and TO-262 thermal performance-making it preferred for high-current 12 V/24 V power stages where lead resistance and junction temperature are limiting factors.

Availability

AUIRF1324WL is available at Aetrix Electronics and suitable for automotive battery management systems, electric power steering inverters, and high-current DC-DC converters requiring stable component supply across multi-year production programs.

Supply support for AUIRF1324WL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap device design.

AUIRF1324WL belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted power systems.

FAQ

Is AUIRF1324WL pin-compatible with standard TO-262 MOSFETs?

Yes - AUIRF1324WL uses the same 3-pin TO-262 outline and mounting hole pattern as conventional TO-262 devices, but features widened leads to reduce resistance and inductance. PCB footprints are mechanically interchangeable, though thermal pad soldering must accommodate the wider leadframe geometry.

What is the maximum recommended gate drive voltage for AUIRF1324WL?

The absolute maximum V_GS is ±20 V, but the device is characterized and qualified for reliable operation at 10 V. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of overvoltage failure during transients.

Does AUIRF1324WL require external gate resistors for automotive EMI compliance?

Yes - a series gate resistor (typically 2.7–10 Ω) is required to control di/dt and suppress high-frequency ringing caused by stray inductance. The internal R_G of 2.4 Ω is insufficient alone; external resistance ensures dv/dt stays below 5 V/ns in 12 V systems per CISPR 25 Class 5 limits.

Can AUIRF1324WL be paralleled for higher current capacity?

Yes - its positive R_DS(on) temperature coefficient (0.022 V/°C) enables natural current sharing. Successful paralleling requires matched gate drive routing, symmetrical source inductance (<1 nH difference), and shared heatsinking to maintain ΔT_J < 5°C between devices.

AUIRF1324WL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Wide Leads

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3mOhm @ 195A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7630 pF @ 19 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262-3 Wide

AUIRF1324WL FAQ

1.How can I place an order for AUIRF1324WL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF1324WL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF1324WL reliable?

The price and inventory of AUIRF1324WL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1324WL is usually 5 days.

3.What payment methods are accepted for AUIRF1324WL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1324WL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF1324WL?

AUIRF1324WL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF1324WL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF1324WL?

For technical support, including AUIRF1324WL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1324WL requirements.

6.How does Aetrix verify that AUIRF1324WL is sourced from the original manufacturer or authorized distributors?

All AUIRF1324WL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1324WL meets industry standards.

7.What is the process for return or replacement of AUIRF1324WL?

All AUIRF1324WL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1324WL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF1324WL part is unused and in its original packaging.

Return procedure for AUIRF1324WL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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