Infineon Technologies AUIRF1404Z
- Part No.:
- AUIRF1404Z
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
AUIRF1404Z.pdf
- Description:
- MOSFET N-CH 40V 160A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,933
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AUIRF1404Z from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 40 V VDS, 3.7 mΩ RDS(on) max at VGS = 10 V and 75 A, with 175°C maximum junction temperature and 710 A pulsed drain current. It delivers ultra-low conduction loss and fast switching for high-efficiency DC-DC conversion and motor control in engine management and battery systems.
For engineers reviewing the AUIRF1404Z datasheet, AUIRF1404Z pinout, AUIRF1404Z application, or AUIRF1404Z equivalent, key selection criteria include its 160 A package-limited continuous current, 100–150 nC total gate charge, repetitive avalanche capability up to Tjmax, and validated performance under automotive thermal cycling and vibration requirements.
Technical Context
This MOSFET employs advanced silicon processing to achieve 2.7 mΩ typical RDS(on) at 10 V gate drive and supports fast switching with 18 ns turn-on delay, 110 ns rise time, and 58 ns fall time under 75 A load. Its body diode exhibits 28–42 ns reverse recovery time and 34–51 nC Qrr, enabling efficient synchronous rectification in buck converters.
The device is qualified to AEC-Q101 standards with -55°C to +175°C operating range, features 0.75°C/W junction-to-case thermal resistance, and allows unclamped inductive switching with 480 mJ tested single-pulse avalanche energy (EAS) at IAS = 75 A, L = 0.11 mH, and RG = 25 Ω.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive bus applications |
| RDS(on) max | 3.7 mΩ @ VGS = 10 V, ID = 75 A - Enables <1 W conduction loss at 130 A continuous operation |
| ID (package) | 160 A @ TC = 25°C - Thermal limit set by TO-220AB leadframe and solder joint reliability |
| Qg | 100–150 nC - Determines gate driver power requirement and switching loss trade-off |
| TJ max | +175°C - Supports operation in under-hood environments without derating below 150°C ambient |
| EAS tested | 480 mJ - Validates robustness against inductive kickback in solenoid and motor drive circuits |
| trr / Qrr | 28–42 ns / 34–51 nC - Limits diode recovery losses during hard commutation in half-bridge topologies |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 1.1 N·m mounting torque rating, and 300°C soldering tolerance for 10 seconds at 1.6 mm from case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically connected to metal tab; requires insulating washer when mounted to heatsink |
| Source | Reference node for gate drive and current return | Low-inductance connection critical for minimizing shoot-through risk in bridge configurations |
| Gate | Control input for channel modulation | High-impedance node requiring low-impedance gate driver to manage 100–150 nC charge efficiently |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 2.7 mΩ typical enables >98% efficiency in 48 V input, 12 V output 100 A DC-DC stages |
| 175°C junction rating | Eliminates need for external thermal derating in engine bay modules operating at 125°C ambient |
| Repetitive avalanche capability | Validated up to Tjmax per Fig. 12a–b, supporting reliable operation in unclamped inductive loads |
| Fast switching with low Qgd/Qgs ratio | 42 nC Qgd vs. 31 nC Qgs improves Miller immunity and reduces turn-off delay in high-dV/dt environments |
| Automotive qualification | AEC-Q101 compliant with full traceability, lot-level test reports, and zero-defect manufacturing controls |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-current fuel injector and ignition coil drivers in gasoline direct injection systems. IC Role / Device Role / Timing Role: Primary switching element in low-side driver stage, handling 10–20 ms pulses at 100–150 A peak. Use Value: 3.7 mΩ RDS(on) minimizes I²R heating during extended duty cycles, extending ECU lifetime beyond 15-year vehicle service life. | Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild hybrid vehicles. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side, operating at 200–300 kHz with forced-air cooling. Use Value: 28–42 ns trr and low Qrr reduce body-diode conduction loss and EMI generation during zero-voltage switching transitions. |
| Electric Power Steering (EPS) Motor Driver | 12 V Battery Disconnect Switch |
Use Scenario: Half-bridge leg in three-phase inverter supplying brushless DC motor in column-assist EPS. IC Role / Device Role / Timing Role: High-side and low-side switch with 175°C thermal margin for sustained 80 A RMS operation. Use Value: 0.75°C/W RθJC enables direct heatsink mounting without thermal interface material degradation over 10,000 thermal cycles. | Use Scenario: Solid-state replacement for mechanical relay in battery management system main contactor. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch controlling 12 V starter battery isolation during sleep mode. Use Value: 710 A pulsed current rating ensures reliable cold-cranking surge handling without bond-wire fusing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 2.2 mΩ RDS(on), DFN 8×8 package, no isolated tab | Requires PCB-level thermal management; unsuitable for TO-220 socket replacement | Select when board space is constrained and thermal vias can handle 200 W dissipation |
| IRF1404ZPBF | Same die, non-automotive grade, 150°C TJ max, no AEC-Q101 documentation | Lacks automotive qualification testing and lot traceability required for OEM production | Select only for prototyping or non-safety-critical aftermarket modules |
Compared with STL220N4F7AG and IRF1404ZPBF, AUIRF1404Z uniquely combines TO-220AB mechanical compatibility, 175°C junction rating, and full AEC-Q101 compliance-making it the only choice for production-grade under-hood power switching where thermal margin and audit-ready qualification are mandatory.
Availability
AUIRF1404Z is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, 48 V–12 V DC-DC converters, and battery disconnect switches requiring stable component supply across multi-year automotive production programs.
Supply support for AUIRF1404Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
The AUIRF1404Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in harsh under-hood environments with emphasis on thermal robustness and avalanche survivability.
FAQ
What is the maximum continuous drain current for AUIRF1404Z at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 120 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased RDS(on) at elevated temperatures, and must be verified against actual heatsink performance using the 0.75°C/W RθJC and system-level RθCA.
Does AUIRF1404Z support gate drive at 5 V logic levels?
No-AUIRF1404Z is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but RDS(on) is only guaranteed at VGS = 10 V. At 5 V gate drive, RDS(on) increases significantly (typically >12 mΩ), causing excessive conduction loss; a 10 V or higher gate driver with sufficient peak current (>2 A) is required for full performance.
How is repetitive avalanche performance validated for this part?
Repetitive avalanche is validated per Figures 15 and 16 in the datasheet, using unclamped inductive test conditions (L = 0.11 mH, RG = 25 Ω, IAS = 75 A). The device is rated for repetitive operation as long as junction temperature remains ≤175°C, with energy limits derived from transient thermal impedance curves and thermal failure modeling-not just single-pulse testing.
Can AUIRF1404Z be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (see Fig. 10) provides inherent current sharing stability. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥5 Ω), and thermal coupling via shared heatsink are mandatory. Parallel operation beyond two devices requires dynamic current imbalance analysis using measured Qgd and VGS(th) distribution data.
AUIRF1404Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
AUIRF1404Z FAQ
1.How can I place an order for AUIRF1404Z through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF1404Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF1404Z reliable?
The price and inventory of AUIRF1404Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1404Z is usually 5 days.
3.What payment methods are accepted for AUIRF1404Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1404Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF1404Z?
AUIRF1404Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF1404Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF1404Z?
For technical support, including AUIRF1404Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1404Z requirements.
6.How does Aetrix verify that AUIRF1404Z is sourced from the original manufacturer or authorized distributors?
All AUIRF1404Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1404Z meets industry standards.
7.What is the process for return or replacement of AUIRF1404Z?
All AUIRF1404Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1404Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF1404Z part is unused and in its original packaging.
Return procedure for AUIRF1404Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AUIRF1404Z Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

