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Infineon Technologies AUIRF1405-INF
- Part No.:
- AUIRF1405-INF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
AUIRF1405-INF.pdf
- Description:
- AUTOMOTIVE HEXFET N CHANNEL
- Quantity:
- Payment:
- Shipping:
Inventory:22,100
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Product details
Overview
AUIRF1405-INF from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel HEXFET® Power MOSFET in TO-220AB package, rated for 55 V V(BR)DSS, 4.6 mΩ typ. RDS(on), 169 A silicon-limited continuous drain current at TC = 25°C, and qualified to AEC-Q101. It serves as a high-efficiency main power switch in 12 V automotive DC-DC converters, motor control inverters, and battery disconnect circuits.
For engineers reviewing the AUIRF1405-INF datasheet, AUIRF1405-INF pinout, AUIRF1405-INF application, or AUIRF1405-INF equivalent, key selection criteria include its 0.45 °C/W RθJC thermal resistance, 170 nC typical total gate charge, 101 A unclamped inductive avalanche rating, and body diode recovery time of 88 ns - all critical for hard-switched automotive power stages requiring ruggedness and low conduction loss.
Technical Context
This MOSFET employs stripe planar silicon technology optimized for low on-resistance per die area and fast switching. Its gate threshold voltage (2.0–4.0 V) enables robust 3.3 V/5 V logic-level drive compatibility when used with appropriate gate drivers, while the 62 nH internal drain inductance and 1210 pF Coss (at VDS = 25 V) directly impact turn-off energy and EMI behavior in high-frequency PWM operation.
The device's thermal design is anchored by junction-to-case thermal resistance of 0.45 °C/W and a maximum operating junction temperature of 175 °C. Its repetitive avalanche capability (EAR = 5.0 mJ at TJ = 25 °C) and single-pulse avalanche energy (EAS = 680 mJ) are validated under defined test conditions (L = 0.11 mH, RG = 25 Ω, IAS = 101 A), supporting fault-tolerant designs in automotive load dump and inductive kick scenarios.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55 V - Withstands up to 55 V drain-source blocking voltage before avalanche onset; suitable for 12 V automotive systems with transient overvoltage margin. |
| RDS(on) typ. | 4.6 mΩ - Enables <1 W conduction loss at 100 A drain current, reducing heatsink requirements in high-current switching nodes. |
| ID (Silicon Limited) | 169 A @ TC = 25°C - Maximum continuous current determined by silicon thermal limits; derates to 118 A at TC = 100°C. |
| Qg typ. | 170 nC - Gate drive energy requirement dictates driver strength needed for <130 ns turn-off delay and 110 ns fall time at 101 A. |
| trr / Qrr | 88 ns / 250 nC - Body diode reverse recovery performance impacts shoot-through risk and switching loss in synchronous rectification or H-bridge freewheeling. |
| RθJC | 0.45 °C/W - Enables direct mounting to heatsinks with predictable thermal rise; 100 W power dissipation yields ~45 °C junction-to-case delta. |
| EAS | 680 mJ - Single-pulse avalanche energy rating supports reliable operation during inductive load interruption without external snubbers. |
Pinout & Package
Package: TO-220AB - Through-hole, single-ended heat-transfer package with isolated tab (drain-connected), rated for industrial and automotive mounting torque (10 lbf·in / 1.1 N·m).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits; primary heat conduction path. |
| Source | Power return node and reference for gate drive | Low-inductance source connection critical for stable gate control; internal LS = 7.5 nH affects switching waveform fidelity. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <200 nA leakage compliance; Miller charge Qgd = 62 nC dominates turn-off timing and dV/dt immunity. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per AEC-Q101-001/002/005; includes HBM ±4 kV, CDM ±2 kV, and MSL Level 1 reliability testing. |
| Low RDS(on) × Qg figure of merit | 4.6 mΩ × 170 nC = 782 mΩ·nC - Balances conduction and switching losses for high-efficiency 20–100 kHz DC-DC topologies. |
| Rugged unclamped inductive switching | Rated for 101 A avalanche current with guaranteed 680 mJ single-pulse energy - eliminates need for external clamping in many motor drive fault conditions. |
| Enhanced body diode performance | trr = 88 ns, Qrr = 250 nC, VSD = 1.3 V - Reduces freewheeling loss and EMI in half-bridge configurations versus standard MOSFETs. |
Applications
| Automotive DC-DC Converter | Engine Control Unit (ECU) Power Switch |
|---|---|
Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for microcontroller and sensor rails in start-stop vehicles. IC Role / Device Role: Primary high-side synchronous rectifier switch in buck converter topology. Use Value: 4.6 mΩ RDS(on) minimizes conduction loss at 30–50 A load currents, enabling >95% efficiency and eliminating forced-air cooling. | Use Scenario: High-current load switching for fuel injectors, ignition coils, and solenoid valves controlled by ECU PWM outputs. IC Role / Device Role: Low-side driver with integrated fast-recovery body diode for inductive load demagnetization. Use Value: 88 ns trr and 250 nC Qrr reduce voltage overshoot and EMI during coil de-energization, meeting CISPR 25 Class 5 emission limits. |
| 12 V Battery Disconnect Unit | Electric Power Steering (EPS) Inverter Stage |
Use Scenario: Solid-state replacement for mechanical relays in battery management systems to isolate auxiliary loads during cranking or fault events. IC Role / Device Role: Main isolation switch handling up to 169 A peak surge current during cold-crank conditions. Use Value: 175 °C max TJ and 680 mJ EAS enable safe operation during 10 ms, 150 A load dump transients without thermal runaway. | Use Scenario: Half-bridge leg in 12 V EPS motor inverter delivering up to 80 A phase current with 20 kHz PWM. IC Role / Device Role: High-efficiency, high-reliability power switch with low Qgd for reduced Miller-induced shoot-through risk. Use Value: 62 nC Qgd and 0.45 °C/W RθJC allow stable 20 kHz switching with <1.5 W total losses per device under full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N5LF6AG | 60 V V(BR)DSS, 3.8 mΩ RDS(on), 130 A ID, PowerFLAT 5x6 package (surface-mount) | Requires PCB-level thermal management; not pin-compatible with TO-220 footprint | Select for space-constrained SMT designs where board-level heatsinking is feasible and higher voltage margin is needed. |
| IRF1405PBF | Identical electrical specs but commercial-grade (not AEC-Q101 qualified); same TO-220AB package | Lacks automotive qualification documentation and extended temperature reliability validation | Select only for non-automotive industrial applications where AEC-Q101 is not mandated. |
Compared with STL130N5LF6AG and IRF1405PBF, the AUIRF1405-INF uniquely delivers automotive qualification, TO-220AB through-hole mountability, and proven 101 A avalanche robustness - making it the preferred choice for safety-critical 12 V power stages where mechanical reliability and long-term field stability are mandatory.
Availability
AUIRF1405-INF is available at Aetrix Electronics and suitable for automotive battery management, engine control unit (ECU) power switching, and electric power steering (EPS) inverter applications requiring stable component supply across multi-year production cycles.
Supply support for AUIRF1405-INF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with deep expertise in silicon-based power devices.
The AUIRF1405-INF belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V automotive power conversion and load switching where ruggedness, low RDS(on), and AEC-Q101 compliance are mandatory.
FAQ
Is AUIRF1405-INF compatible with standard TO-220 heatsinks?
Yes - the AUIRF1405-INF uses the industry-standard TO-220AB package with an isolated metal tab (drain-connected). It is mechanically and thermally compatible with common TO-220 heatsinks when mounted using the specified 10 lbf·in (1.1 N·m) torque and electrically insulating hardware. Thermal performance assumes flat, greased interface (RθCS = 0.50 °C/W).
What gate drive voltage is required for full enhancement?
The AUIRF1405-INF achieves its specified 4.6 mΩ RDS(on) at VGS = 10 V. While it begins conducting above VGS(th) = 2.0 V, full enhancement and minimal on-resistance require ≥10 V gate drive. For 3.3 V microcontroller interfaces, a gate driver IC (e.g., Infineon 1EDN7512) is necessary to ensure reliable saturation and avoid thermal runaway.
Does AUIRF1405-INF support paralleling for higher current?
Yes - its positive RDS(on) temperature coefficient (0.057 V/°C) enables inherently stable current sharing when multiple devices are paralleled. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥10 Ω), and thermal coupling must be carefully implemented to prevent dynamic imbalance during switching transitions.
How does its body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = 1.3 V and trr = 88 ns - higher forward drop than Schottky diodes but significantly faster recovery than standard PN diodes. It is suitable for freewheeling in medium-frequency (<100 kHz) automotive inverters but not for ultra-low-loss synchronous rectification where Schottky or GaN-based solutions offer superior VF and Qrr trade-offs.
AUIRF1405-INF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 5.3mOhm @ 101A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 260 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5480 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 330W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
AUIRF1405-INF FAQ
1.How can I place an order for AUIRF1405-INF through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF1405-INF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF1405-INF reliable?
The price and inventory of AUIRF1405-INF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1405-INF is usually 5 days.
3.What payment methods are accepted for AUIRF1405-INF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1405-INF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF1405-INF?
AUIRF1405-INF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF1405-INF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF1405-INF?
For technical support, including AUIRF1405-INF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1405-INF requirements.
6.How does Aetrix verify that AUIRF1405-INF is sourced from the original manufacturer or authorized distributors?
All AUIRF1405-INF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1405-INF meets industry standards.
7.What is the process for return or replacement of AUIRF1405-INF?
All AUIRF1405-INF units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1405-INF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF1405-INF part is unused and in its original packaging.
Return procedure for AUIRF1405-INF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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