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Infineon Technologies AUIRF1405ZS
- Part No.:
- AUIRF1405ZS
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
AUIRF1405ZS.pdf
- Description:
- MOSFET N-CH 55V 150A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,006
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Product details
Overview
AUIRF1405ZS from Infineon Technologies is an automotive-grade N-channel HEXFET® Power MOSFET in D2Pak (TO-262) package, rated for 55 V V(BR)DSS, 4.9 mΩ RDS(on) max at 10 V VGS, and 150 A continuous drain current at TC = 25°C. It operates up to 175°C junction temperature, supports repetitive avalanche up to Tjmax, and is optimized for high-efficiency DC-DC converters and motor control in engine management systems.
For engineers reviewing the AUIRF1405ZS datasheet, AUIRF1405ZS pinout, AUIRF1405ZS application, or AUIRF1405ZS equivalent, key selection criteria include its ultra-low on-resistance, 120–180 nC total gate charge, 770 pF Coss at 25 V, 30–46 ns trr body diode recovery, and AEC-Q101 qualification for under-hood automotive power switching.
Technical Context
This MOSFET employs advanced planar silicon process technology to minimize conduction losses while maintaining robust unclamped inductive switching capability. Its design integrates a low-inductance internal structure (LS = 7.5 nH, LD = 4.5 nH) and thermally optimized die attach for stable operation under repetitive avalanche stress up to TJ = 175°C.
The device features a 2.0–4.0 V gate threshold voltage with positive temperature coefficient, enabling predictable current sharing in paralleled configurations. Its 4780 pF Ciss and 410 pF Crss support fast, controllable switching in hard-switched topologies when driven with appropriate gate resistance (e.g., RG = 4.4 Ω recommended for 75 A ID).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55 V - Withstands 55 V drain-source blocking voltage before avalanche onset; suitable for 48 V automotive bus and 24 V starter-generator systems. |
| RDS(on) max | 4.9 mΩ @ VGS = 10 V, TC = 25°C - Enables ≤7.4 W conduction loss at 125 A, critical for thermal management in compact power modules. |
| ID (cont) | 150 A @ TC = 25°C - Supports high-current loads such as electric power steering (EPS) motor drivers and transmission solenoid controls. |
| EAS (tested) | 420 mJ - Validated single-pulse avalanche energy at TJ = 25°C, L = 0.10 mH, IAS = 75 A, enabling reliable operation during load dump or inductive kick events. |
| Qg | 120–180 nC - Determines gate drive power requirement; drives ~1.8–2.7 W average gate power at 100 kHz with 12 V drive, influencing driver IC selection. |
| trr / Qrr | 30–46 ns / 30–45 nC - Fast body diode recovery minimizes commutation losses in synchronous rectification and bidirectional DC-DC stages. |
| RθJC | 0.65 °C/W - Low junction-to-case thermal resistance enables direct heatsink mounting without thermal interface material degradation concerns in harsh environments. |
Pinout & Package
Package: D2Pak (TO-262), surface-mount with isolated drain tab for PCB heatsinking. Pin assignment verified per Infineon's official datasheet (PD-97486A Rev. A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically connected to exposed copper pad; must be soldered to large copper area or heatsink for thermal and electrical performance. |
| Source | Reference node for gate drive and current return | Low-inductance source bond wires (LS = 7.5 nH) reduce switching overshoot and improve stability in high-di/dt applications. |
| Gate | Control input for channel conduction | Requires <20 V absolute maximum rating; 10 V typical for full enhancement; Miller charge (Qgd = 46 nC) dominates turn-off timing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.7 mΩ typ. @ VGS = 10 V - Reduces conduction losses by >30% vs. legacy 55 V MOSFETs, directly improving system efficiency in 12–48 V battery architectures. |
| 175°C operating temperature | Junction rated to +175°C - Enables placement near hot zones (e.g., engine bay, transmission housing) without derating or forced cooling. |
| Repetitive avalanche rated | Validated per AEC-Q101 - Allows safe operation under repeated inductive switching stress (e.g., solenoid actuation, fuel injector drive) without cumulative degradation. |
| AEC-Q101 qualified | Automotive grade per AEC-Q101-001/002/005 - Includes HBM 2 kV, CDM 1125 V, and MM 425 V ESD robustness, ensuring reliability in assembly and field use. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Electric Power Steering (EPS) Motor Phase Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with 1–5 ms pulse widths and 10–20 A peak current. IC Role / Device Role / Timing Role: Main power switch controlling solenoid coil energization; handles unclamped inductive flyback during turn-off. Use Value: 420 mJ EAS and 175°C TJ rating ensure survival across 100,000+ injection cycles under transient overvoltage and ambient temperatures up to 150°C. | Use Scenario: Three-phase inverter leg switching for brushless DC motor in 12–48 V EPS systems, delivering up to 150 A peak phase current. IC Role / Device Role / Timing Role: Low-side or high-side N-channel switch in half-bridge topology; requires fast trr and low Qgd for efficient PWM commutation. Use Value: 30–46 ns trr and 46 nC Qgd enable ≤20 kHz PWM with <5% switching loss penalty, supporting precise torque control and noise reduction. |
| 48 V Mild Hybrid DC-DC Converter Primary Switch | Transmission Solenoid Control Module |
Use Scenario: Primary-side synchronous rectifier switch in bi-directional buck-boost converter linking 12 V and 48 V domains in mild hybrid vehicles. IC Role / Device Role / Timing Role: High-current, high-frequency (100–300 kHz) hard-switched power transistor with body diode conduction during dead time. Use Value: 4780 pF Ciss and 410 pF Crss allow controlled dV/dt and reduced EMI; 770 pF Coss at 25 V ensures low capacitive turn-on loss during ZVS-assisted transitions. | Use Scenario: On/off control of hydraulic pressure solenoids (e.g., shift control, clutch apply) in automatic transmissions, operating at 12 V with 5–10 A steady-state current. IC Role / Device Role / Timing Role: Robust, thermally stable switch handling pulsed loads with high inductive energy storage and frequent thermal cycling. Use Value: 0.65 °C/W RθJC and 150 A ID rating permit direct PCB heatsinking without external heatsinks, reducing module size and cost in space-constrained valve bodies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4L5F7 | 4.5 mΩ RDS(on) max @ 10 V, 220 A ID, LFPAK56 package, 175°C TJ | Higher current rating but larger footprint; lower Qg (105 nC) enables faster switching | Preferred where board space allows and higher peak current headroom is needed; requires re-evaluation of gate drive strength due to lower Qg. |
| IRFB4115PBF | 5.2 mΩ RDS(on) max @ 10 V, 140 A ID, TO-220 package, 175°C TJ, non-automotive grade | Same voltage class but lacks AEC-Q101 qualification and has higher RDS(on); no repetitive avalanche rating | Acceptable only for non-safety-critical industrial prototypes; not approved for production automotive use due to missing qualification and lower ruggedness. |
Compared with STL220N4L5F7 and IRFB4115PBF, AUIRF1405ZS offers optimal balance of ultra-low on-resistance, AEC-Q101 compliance, and validated repetitive avalanche capability-making it the preferred choice for production automotive power stages where reliability under transient stress is mandatory.
Availability
AUIRF1405ZS is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended vehicle lifecycles.
Supply support for AUIRF1405ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control solutions, with global manufacturing and qualification infrastructure.
AUIRF1405ZS belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-current switching in under-hood and chassis-mounted automotive subsystems.
FAQ
What is the maximum allowable gate-to-source voltage for AUIRF1405ZS?
The absolute maximum VGS rating is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative gate voltage beyond –20 V may cause irreversible threshold shift. Recommended gate drive is 10–15 V for full enhancement with margin; gate resistors should limit dv/dt-induced ringing without compromising switching speed.
Does AUIRF1405ZS require a gate resistor, and what value is recommended?
Yes-a gate resistor is required to dampen oscillation and control switching speed. For 75 A ID operation with 12 V gate drive, Infineon recommends RG = 4.4 Ω (typical) to achieve ~18 ns td(on) and ~48 ns td(off), balancing EMI, shoot-through risk, and switching loss. Higher values reduce EMI but increase power loss; lower values risk ringing and driver overstress.
Can AUIRF1405ZS be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient (normalized resistance increases with TJ) enables stable current sharing across paralleled devices. Layout must ensure matched gate loop inductance and symmetrical source routing to avoid dynamic imbalance; gate resistors should be individually placed close to each device's gate pin.
Is the body diode suitable for continuous freewheeling in synchronous rectification?
The integrated body diode supports continuous conduction with IS = 75 A (continuous) and VSD ≤ 1.3 V at 75 A, but its 30–46 ns trr and 30–45 nC Qrr make it less efficient than discrete Schottky diodes in high-frequency (>100 kHz) applications. It is fully qualified for freewheeling in EPS and injector drivers where frequency is ≤20 kHz and thermal design accommodates diode conduction losses.
AUIRF1405ZS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4780 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
AUIRF1405ZS FAQ
1.How can I place an order for AUIRF1405ZS through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF1405ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF1405ZS reliable?
The price and inventory of AUIRF1405ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1405ZS is usually 5 days.
3.What payment methods are accepted for AUIRF1405ZS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1405ZS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF1405ZS?
AUIRF1405ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF1405ZS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF1405ZS?
For technical support, including AUIRF1405ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1405ZS requirements.
6.How does Aetrix verify that AUIRF1405ZS is sourced from the original manufacturer or authorized distributors?
All AUIRF1405ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1405ZS meets industry standards.
7.What is the process for return or replacement of AUIRF1405ZS?
All AUIRF1405ZS units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1405ZS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF1405ZS part is unused and in its original packaging.
Return procedure for AUIRF1405ZS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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