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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF1405ZS-7P

Name: AUIRF1405ZS-7P
Brand: Infineon Technologies
SKU: AUIRF1405ZS-7P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF1405ZS-7P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: AUIRF1405ZS-7P.pdf

Description:: MOSFET N-CH 55V 120A D2PAK

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Product details

Overview

AUIRF1405ZS-7P from Infineon Technologies is an automotive-grade N-channel D2PAK-7L HEXFET® Power MOSFET with 55 V V_DS, 4.9 mΩ R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_r = 140 ns, t_f = 130 ns), and rated repetitive avalanche energy up to 230 mJ - deployed in high-current DC-DC converters and motor control inverters for 48 V mild-hybrid systems.

For engineers reviewing the AUIRF1405ZS-7P datasheet, AUIRF1405ZS-7P pinout, AUIRF1405ZS-7P application, or AUIRF1405ZS-7P equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (4.9 mΩ × 230 nC), body diode reverse recovery charge (Q_rr = 240 nC), and D2PAK-7L package thermal resistance (R_θJC = 0.65 °C/W) for high-power density designs.

Technical Context

This device uses advanced trench-gate silicon process technology to minimize conduction loss while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, and its 175°C maximum junction temperature supports operation in under-hood automotive environments without derating at elevated ambient temperatures.

The D2PAK-7L package integrates three source pins and two gate pins to reduce parasitic inductance and improve current sharing during high-di/dt switching. The internal body diode exhibits 1.3 V forward voltage at 88 A and 63–95 ns reverse recovery time - critical for synchronous rectification and freewheeling in bidirectional power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V nominal bus systems with 20% overvoltage margin.
R_DS(on)	4.9 mΩ @ V_GS = 10 V - Enables ≤0.6 W conduction loss at 110 A, reducing heatsink requirements.
I_D (continuous)	120 A @ T_C = 25°C - Supports high-current motor phase legs and battery disconnect switches.
Q_g	230 nC - Determines gate drive power requirement; compatible with common 2 A peak gate drivers.
E_AS	590 mJ - Specifies single-pulse avalanche energy handling without failure, critical for inductive load transients.
R_θJC	0.65 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for >100 W dissipation.
Q_rr	240 nC - Quantifies body diode recovery charge affecting switching loss and EMI in hard-switched topologies.

Pinout & Package

Package: D2PAK-7L (TO-263-7), surface-mount, thermally enhanced with exposed drain pad and multiple source/gate terminals for low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (Source)	Power return path for main current	Three parallel source pins reduce bond wire inductance and improve current sharing in high-di/dt operation.
4, 5 (Gate)	Control input for channel modulation	Dual gate pins allow separate drive and sense paths to suppress Miller-induced false turn-on.
6, 7 (Drain)	Main power output / high-side connection	Drain connected to large copper tab; requires soldered thermal pad for R_θJC = 0.65 °C/W performance.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.9 mΩ at 10 V gate drive - reduces I²R losses by >35% vs. legacy D2PAK devices in 48 V traction inverters.
175°C junction rating	Rated operation up to 175°C - eliminates derating in engine bay applications where ambient reaches 125°C.
Repetitive avalanche capability	230 mJ EAR at T_J = 175°C - enables reliable operation during short-circuit events without external protection.
Low Q_gd/Q_g ratio	64 nC / 230 nC = 27.8% - improves hard-switching efficiency and reduces susceptibility to dv/dt-induced turn-on.
Automotive qualification	AEC-Q101 qualified - validated for vibration, temperature cycling, and humidity testing per automotive reliability standards.

Applications

48 V Mild-Hybrid DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: High-efficiency bidirectional buck-boost conversion between 12 V starter battery and 48 V Li-ion auxiliary battery.

IC Role / Device Role / Timing Role: Primary high-side switch in interleaved 2-phase topology operating at 100–200 kHz.

Use Value: 4.9 mΩ R_DS(on) and 230 nC Q_g enable >97% peak efficiency at 5 kW, minimizing thermal stress on PCB-mounted heatsinks.

Use Scenario: Three-phase inverter driving 1.5 kW brushless DC motor in column-assist EPS system.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack configuration with space-constrained motor control module.

Use Value: D2PAK-7L's 0.65 °C/W R_θJC allows full 120 A rating with 25 mm² heatsink area, meeting ASIL-C thermal safety targets.

On-Board Charger (OBC) Input Stage

12 V Battery Disconnect Switch

Use Scenario: Active rectification and PFC front-end in 3.3 kW OBC for plug-in hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in totem-pole PFC stage switching at 150 kHz with ZVS.

Use Value: Body diode Q_rr = 240 nC and V_SD = 1.3 V ensure low reverse recovery loss and reduced EMI during zero-voltage transitions.

Use Scenario: Solid-state replacement for mechanical relay in high-current battery isolation circuit.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch controlling 12 V supply to ADAS domain controller.

Use Value: 590 mJ E_AS withstands inrush currents up to 500 A during hot-plug events without destructive avalanche.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	R_DS(on) = 2.2 mΩ (lower), but Q_g = 320 nC (higher); DFN8 5×6 package, R_θJC = 1.2 °C/W	Better conduction loss but higher gate drive loss and inferior thermal performance; unsuitable for >80 A continuous without forced air.	Select only when board space is constrained and thermal management includes active cooling.
IRFP4868PbF	R_DS(on) = 5.2 mΩ (slightly higher), Q_g = 190 nC (lower); TO-247 package, R_θJC = 0.45 °C/W	Lower gate charge improves switching efficiency, but through-hole mounting increases assembly cost and limits automation.	Prefer for legacy industrial designs requiring proven reliability and manual rework access.

Compared with STL220N5LF8AG and IRFP4868PbF, AUIRF1405ZS-7P delivers optimal balance of low R_DS(on), moderate Q_g, and superior thermal resistance in a surface-mount automotive package - making it the preferred choice for new 48 V automotive power modules targeting ASIL-B functional safety compliance.

Availability

AUIRF1405ZS-7P is available at Aetrix Electronics and suitable for 48 V mild-hybrid DC-DC converters, electric power steering inverters, and on-board chargers requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRF1405ZS-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRF1405ZS-7P belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-reliability, high-current switching in 12 V/48 V dual-battery vehicle architectures.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The AUIRF1405ZS-7P supports 100 A continuous drain current at T_C = 100°C, as specified in Figure 9 of the datasheet. This value reflects silicon-limited conduction capability under sustained thermal conditions and assumes proper PCB copper area and heatsinking to maintain case temperature.

Does this MOSFET require a negative gate voltage for safe turn-off in high-noise environments?

No - the device has a gate threshold voltage range of 2.0–4.0 V and is fully controllable with 0 V to 10 V gate drive. However, applying –5 V during off-state improves noise immunity in high-di/dt motor drive applications by increasing gate-source margin against spurious Miller coupling.

Can the body diode be used for synchronous rectification in a buck converter?

Yes - the integrated body diode has V_SD = 1.3 V at 88 A and t_rr = 63–95 ns, enabling use in synchronous rectification. However, external Schottky diodes or complementary FETs are recommended for >200 kHz operation due to Q_rr-related switching loss.

Is the D2PAK-7L package lead-free and RoHS-compliant?

Yes - AUIRF1405ZS-7P is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Infineon's material declaration document ID 2022-000187.

AUIRF1405ZS-7P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 88A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

AUIRF1405ZS-7P FAQ

1.How can I place an order for AUIRF1405ZS-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF1405ZS-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF1405ZS-7P reliable?

The price and inventory of AUIRF1405ZS-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1405ZS-7P is usually 5 days.

3.What payment methods are accepted for AUIRF1405ZS-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1405ZS-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF1405ZS-7P?

AUIRF1405ZS-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF1405ZS-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF1405ZS-7P?

For technical support, including AUIRF1405ZS-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1405ZS-7P requirements.

6.How does Aetrix verify that AUIRF1405ZS-7P is sourced from the original manufacturer or authorized distributors?

All AUIRF1405ZS-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1405ZS-7P meets industry standards.

7.What is the process for return or replacement of AUIRF1405ZS-7P?

All AUIRF1405ZS-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1405ZS-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF1405ZS-7P part is unused and in its original packaging.

Return procedure for AUIRF1405ZS-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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