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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF1405ZSTRL

Name: AUIRF1405ZSTRL
Brand: Infineon Technologies
SKU: AUIRF1405ZSTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF1405ZSTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF1405ZSTRL.pdf

Description:: MOSFET N-CH 55V 150A D2PAK

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Product details

Overview

AUIRF1405ZSTRL from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel HEXFET® Power MOSFET in D2Pak (TO-262) package, rated for 55 V V(BR)DSS, 4.9 mΩ RDS(on) max at 10 V VGS, and 150 A continuous drain current at TC = 25°C. It features 175°C junction temperature rating, fast switching (tr = 110 ns, tf = 82 ns), and qualified repetitive avalanche capability up to TJmax - designed for high-efficiency DC-DC converters, motor control inverters, and automotive power distribution modules.

For engineers reviewing the AUIRF1405ZSTRL datasheet, AUIRF1405ZSTRL pinout, AUIRF1405ZSTRL application, or AUIRF1405ZSTRL equivalent, key selection criteria include its ultra-low on-resistance, AEC-Q101 qualification, thermal robustness under pulsed load conditions, and body diode performance (trr = 30–46 ns, Qrr = 30–45 nC) in synchronous rectification and H-bridge topologies.

Technical Context

This MOSFET employs advanced planar silicon process technology to minimize conduction losses while maintaining rugged unclamped inductive switching behavior. Its gate charge profile (Qg = 120–180 nC, Qgd = 46 nC) supports efficient high-frequency operation up to ~100 kHz in hard-switched converters, with Coss eff = 910 pF enabling predictable turn-off energy calculation.

The device integrates a low-VF (1.3 V max) intrinsic body diode optimized for commutation in bidirectional power stages. Repetitive avalanche is thermally limited and validated per AEC-Q101 test conditions (L = 0.10 mH, IAS = 75 A, RG = 25 Ω, VGS = 10 V), with safe operating area defined up to 100 µs pulse width at Tj = 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	55 V - Withstands up to 55 V drain-source blocking voltage before avalanche onset; suitable for 48 V automotive systems with margin.
RDS(on) max	4.9 mΩ @ VGS = 10 V, TC = 25°C - Enables <1 W conduction loss at 100 A, critical for high-current battery disconnect switches.
ID continuous	150 A @ TC = 25°C - Supports high-power motor drive phases when heatsinked to maintain case temperature ≤25°C.
EAS tested	270 mJ - Validated single-pulse avalanche energy at TJ = 25°C, L = 0.10 mH, defining ruggedness in inductive load switching.
tr / tf	110 ns / 82 ns - Fast edge rates reduce switching losses in PWM-controlled DC-DC stages operating above 50 kHz.
TJ range	−55°C to +175°C - Fully specified across full automotive ambient range; enables under-hood placement without derating.
Qrr	30–45 nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous buck converters.

Pinout & Package

Package: D2Pak (TO-262), surface-mount with isolated drain tab. Thermal resistance RθJC = 0.65°C/W enables direct heatsinking via soldered tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to exposed copper tab; must be soldered to PCB copper pour or heatsink for thermal and electrical integrity.
Source	Reference node for gate drive and current return	Low-inductance source connection (LS = 7.5 nH) reduces ringing during fast switching transitions.
Gate	Control input for channel modulation	Requires 10 V drive for full enhancement; threshold voltage VGS(th) = 2.0–4.0 V ensures noise immunity in noisy automotive environments.

Key Features

Feature	Design Value
Ultra-low RDS(on)	3.7 mΩ typical at 10 V - Reduces conduction loss by >30% vs. legacy 55 V MOSFETs, improving efficiency in 12–48 V battery systems.
AEC-Q101 qualified	Qualified per AEC-Q101-001/002/005 - Validated for automotive under-hood use including temperature cycling, HBM/CDM ESD, and repetitive avalanche stress.
Repetitive avalanche rated	EAR = 200 mJ @ TJ = 125°C - Enables reliable operation in unclamped inductive switching without external snubbers in motor phase-legs.
Fast body diode	trr = 30–46 ns, Qrr = 30–45 nC - Supports high-frequency synchronous rectification with minimal reverse recovery loss and voltage overshoot.

Applications

Automotive Engine Control Unit (ECU) Power Stage

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch controlling fuel injector solenoid or turbocharger actuator in ECU module.

IC Role / Device Role / Timing Role: Power switch handling 10–20 A pulsed loads at 10–50 Hz, with fast turn-on/off to meet precise injection timing.

Use Value: 175°C TJ rating ensures reliability during prolonged engine heat soak; low Qgd minimizes Miller-induced false turn-on during high dv/dt transients.

Use Scenario: Synchronous rectifier in 48 V–12 V bi-directional buck-boost converter for mild hybrid energy recovery.

IC Role / Device Role / Timing Role: Low-side switch conducting up to 150 A average current with 100 kHz PWM, leveraging low RDS(on) and fast body diode.

Use Value: 4.9 mΩ RDS(on) limits conduction loss to <1.1 W at 150 A; Qrr < 45 nC prevents cross-conduction in synchronous gate drive schemes.

Commercial Vehicle Battery Disconnect Switch

Industrial Motor Drive Inverter Phase Leg

Use Scenario: Solid-state replacement for mechanical contactor in 24 V/48 V commercial vehicle battery management system.

IC Role / Device Role / Timing Role: Single-pole, high-current switch rated for 150 A continuous, supporting hot-swap and short-circuit protection.

Use Value: Repetitive avalanche rating allows safe interruption of inductive fault currents without external clamping; TO-262 tab enables bolt-down heatsinking.

Use Scenario: Upper/lower switch in three-phase inverter driving 5–10 kW PMSM motor in HVAC or pump applications.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 8–16 kHz with 150 A peak phase current and 55 V DC bus.

Use Value: 0.65°C/W RθJC enables direct thermal coupling to aluminum heatsink; fast tr/tf reduces total switching loss below 2.5 W per switch.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55 V, 2.2 mΩ RDS(on), LFPAK88 package, 175°C TJ, AEC-Q101	Lower RDS(on) but smaller package; lower ID continuous (120 A) and higher Qg (195 nC)	Preferred where board space is constrained and thermal interface is optimized for small footprint; less suitable for >130 A continuous loads.
IPB040N05N5	55 V, 4.0 mΩ RDS(on), TO-263 package, 175°C TJ, AEC-Q101	Similar RDS(on) and current rating, but TO-263 has higher RθJA; no published EAS test data	Better suited for non-avalanche-critical applications with forced-air cooling; lacks documented repetitive avalanche validation.

Compared with STL220N5LF8AG and IPB040N05N5, AUIRF1405ZSTRL offers the highest validated avalanche energy (270 mJ) and largest continuous current headroom (150 A), making it optimal for ruggedized automotive power distribution where fault tolerance and thermal margin are prioritized over minimal footprint.

Availability

AUIRF1405ZSTRL is available at Aetrix Electronics and suitable for automotive power distribution, industrial motor drives, and 48 V mild hybrid DC-DC converters requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant traceability.

Supply support for AUIRF1405ZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap device design.

AUIRF1405ZSTRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine control, battery management, and electrified powertrain systems.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRF1405ZSTRL?

The absolute maximum VGS rating is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 10–15 V for full enhancement with margin; gate resistors should limit peak current to avoid oscillation during fast transitions.

Does AUIRF1405ZSTRL require a gate driver IC in automotive applications?

Yes - due to its 120–180 nC total gate charge and requirement for fast, clean 10 V switching, a dedicated gate driver (e.g., Infineon 1EDN7512B) is required to achieve specified tr/tf and prevent shoot-through in half-bridge configurations.

How is the drain tab electrically isolated in the D2Pak package?

The drain tab is not electrically isolated - it is directly connected to the internal drain metallization. PCB layout must assign the tab to the drain net and ensure no unintended shorts to adjacent ground or signal planes; thermal pad must be soldered to a dedicated copper pour tied to drain potential.

Can AUIRF1405ZSTRL be used in parallel configurations?

Yes - its positive RDS(on) temperature coefficient (normalized RDS(on) increases with TJ) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≥10 Ω) to suppress oscillation and ensure simultaneous turn-on.

AUIRF1405ZSTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRF1405ZSTRL FAQ

1.How can I place an order for AUIRF1405ZSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF1405ZSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF1405ZSTRL reliable?

The price and inventory of AUIRF1405ZSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1405ZSTRL is usually 5 days.

3.What payment methods are accepted for AUIRF1405ZSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1405ZSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF1405ZSTRL?

AUIRF1405ZSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF1405ZSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF1405ZSTRL?

For technical support, including AUIRF1405ZSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1405ZSTRL requirements.

6.How does Aetrix verify that AUIRF1405ZSTRL is sourced from the original manufacturer or authorized distributors?

All AUIRF1405ZSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1405ZSTRL meets industry standards.

7.What is the process for return or replacement of AUIRF1405ZSTRL?

All AUIRF1405ZSTRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1405ZSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF1405ZSTRL part is unused and in its original packaging.

Return procedure for AUIRF1405ZSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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