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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF2804L

Name: AUIRF2804L
Brand: Infineon Technologies
SKU: AUIRF2804L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF2804L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: AUIRF2804L.pdf

Description:: MOSFET N-CH 40V 195A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF2804L from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in TO-262 (ISOTOP) package, designed as a high-current, low-R_DS(on) switch for 12 V DC systems. It delivers 195 A continuous drain current (package-limited), 40 V V_DSS, 1.5 mΩ typical R_DS(on) at V_GS = 10 V, and operates up to 175 °C junction temperature - enabling use in engine control units, battery disconnect switches, and high-power motor drivers.

For engineers reviewing the AUIRF2804L datasheet, AUIRF2804L pinout, AUIRF2804L application, or AUIRF2804L equivalent, key selection criteria include its 1.5 mΩ on-resistance at 75 A, 1080 A pulsed drain rating, 160 nC total gate charge, repetitive avalanche capability, and TO-262 thermal performance under high ambient conditions.

Technical Context

This MOSFET employs Infineon's HEXFET® process optimized for automotive reliability, featuring ultra-low conduction loss and fast switching with 13 ns turn-on delay and 130 ns fall time. Its 175 °C rated junction temperature and 0.50 °C/W junction-to-case thermal resistance support sustained operation in under-hood environments without derating.

The device integrates a robust body diode with 56 ns reverse recovery time and 67 nC Q_rr, enabling efficient synchronous rectification and freewheeling in high-frequency DC-DC converters. Repetitive avalanche energy (E_AR) is rated up to 540 mJ at T_J = 25 °C, validated per unclamped inductive test (UIL) conditions per AN-1005.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in automotive 12 V nominal systems with load dump margin.
R_DS(on) typ.	1.5 mΩ @ V_GS = 10 V, I_D = 75 A - Enables <1.1 W conduction loss at 90 A, reducing heatsink requirements.
I_D (Package)	195 A @ T_C = 25 °C - Real-world continuous current limit defined by leadframe and solder joint thermal capacity.
Q_g	160 nC max - Determines gate driver strength requirement; supports 100 kHz+ switching with <2 W drive loss.
E_AS	1160 mJ tested - Confirmed single-pulse avalanche robustness under worst-case inductive turn-off (L = 0.24 mH, I_AS = 75 A).
T_J max	+175 °C - Allows direct mounting on hot surfaces (e.g., transmission housings) without thermal throttling.
R_θJC	0.50 °C/W - Enables 300 W power dissipation with ≤150 °C case-to-junction delta, critical for compact ECU designs.

Pinout & Package

TO-262 (ISOTOP) package with isolated metal tab; three terminals: Drain (D), Source (S), Gate (G). Mounting screw torque: 1.1 N·m (10 lbf·in). Tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal, connected to metal tab	High-current path to load/ground return; requires insulated mounting when tab is not at system ground potential.
Source (S)	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistors or Kelvin sense traces; LS = 7.5 nH limits dI/dt-induced gate oscillation.
Gate (G)	Control input for channel conduction	Requires 10 V drive for full enhancement; V_GS(th) = 2.0–4.0 V ensures noise immunity in noisy automotive environments.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.5 mΩ typ. enables >99% efficiency in 12 V, 100 A switching applications with minimal thermal footprint.
175 °C operation	Rated junction temperature allows uninterrupted function in engine bay locations where ambient exceeds 125 °C.
Repetitive avalanche rating	Validated per AN-1005 for repeated inductive turn-off events without degradation - essential for solenoid and fuel injector drivers.
Fast switching	13 ns t_d(on), 130 ns t_f minimizes transition losses in 50–200 kHz DC-DC stages and PWM motor controls.
Automotive qualification	AEC-Q101 qualified with zero defects in HTOL, TC, HAST, and UHAST testing - meets ISO/TS 16949 production requirements.

Applications

Engine Control Unit (ECU) Power Stage

12 V Battery Disconnect Switch

Use Scenario: High-side switching of fuel injectors, ignition coils, and throttle actuators in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Primary power switch handling 5–100 A pulsed loads with <10 µs response and 100 kcycles lifetime.

Use Value: 1.5 mΩ R_DS(on) reduces self-heating during extended idle operation; 175 °C rating avoids thermal shutdown during summer under-hood conditions.

Use Scenario: Isolation of starter battery from auxiliary loads (e.g., inverters, compressors) during cranking or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch with fast turn-off (<200 ns) to prevent backfeed during voltage sag.

Use Value: 1080 A pulsed rating handles cranking surge; repetitive avalanche withstands inductive kickback from solenoid-based contactors.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) DC Link Switch

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor (24–48 V bus, 50–150 A peak).

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting freewheeling current during PWM dead-time.

Use Value: 56 ns t_rr and 67 nC Q_rr minimize diode switching loss and voltage overshoot, improving inverter efficiency by ~1.2% at 20 kHz.

Use Scenario: High-current DC switch between AC/DC stage and DC/DC isolation stage in bidirectional OBCs.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactors, supporting >100,000 make/break cycles at 150 A.

Use Value: 0.50 °C/W R_θJC enables air-cooled design; RoHS-compliant lead-free finish ensures long-term solder joint integrity at 175 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ (lower), but V_DSS = 40 V same; TO-263 package; 175 °C rated; Q_g = 180 nC (higher)	Better conduction loss but higher gate drive demand; less rugged avalanche (E_AS = 620 mJ vs. 1160 mJ)	Prefer when minimizing I²R loss dominates; avoid in high-dI/dt inductive loads without snubbers.
IRFB4115PBF	R_DS(on) = 3.2 mΩ (higher); TO-220AB; 175 °C; Q_g = 120 nC (lower); E_AS = 920 mJ	Lower gate charge eases driver design but higher R_DS(on) increases conduction loss by 113% at 100 A	Choose for cost-sensitive, lower-current (<80 A) applications where thermal margin exists and driver simplicity is prioritized.

Compared with STL220N4F7AG and IRFB4115PBF, AUIRF2804L offers the best balance of ultra-low R_DS(on), high avalanche robustness, and TO-262 thermal performance - making it optimal for space-constrained, high-reliability automotive power stages where both conduction and switching losses must be minimized.

Availability

AUIRF2804L is available at Aetrix Electronics and suitable for engine control units, battery management systems, and electric power steering modules requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF2804L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and quality certification to IATF 16949.

AUIRF2804L belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V and 48 V vehicle subsystems - emphasizing ruggedness, low loss, and long-term reliability under vibration and thermal cycling.

FAQ

What is the maximum continuous drain current for AUIRF2804L at 100 °C case temperature?

The AUIRF2804L supports 190 A continuous drain current at T_C = 100 °C (silicon-limited), per the Absolute Maximum Ratings table. This reflects thermal derating from the 195 A rating at 25 °C case temperature, based on its 0.50 °C/W R_θJC and 175 °C T_J(max). Actual usable current depends on heatsink design and ambient airflow.

Is AUIRF2804L pin-compatible with AUIRF2804 or AUIRF2804S?

No - AUIRF2804L uses TO-262 (ISOTOP) package with 3 leads in inline configuration; AUIRF2804 is TO-220AB (3 leads, bent leads); AUIRF2804S is D2PAK (surface-mount). Pin functions (D/S/G) are identical, but mechanical footprint, thermal interface, and mounting method differ significantly. PCB layout and heatsinking must be redesigned for each variant.

Does AUIRF2804L require a gate resistor for automotive EMI compliance?

Yes - a 2.5 Ω gate resistor is specified in the datasheet for switching characterization (e.g., t_d(off), t_f). For EMI suppression in 12 V systems, a 5–10 Ω non-inductive resistor is recommended to dampen ringing caused by LS + LD (7.5 nH source + 4.5 nH drain inductance) and reduce dv/dt-induced crosstalk in multi-MOSFET layouts.

Can AUIRF2804L be used in synchronous rectification for 48 V DC-DC converters?

Yes - its 1.5 mΩ R_DS(on), 56 ns t_rr, and 67 nC Q_rr support efficient synchronous rectification up to 200 kHz in 48 V input stages. However, gate drive must provide ≥10 V with <50 ns rise/fall to ensure full enhancement during short duty cycles; body diode conduction must be minimized via precise timing control to avoid reverse recovery loss.

AUIRF2804L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

AUIRF2804L FAQ

1.How can I place an order for AUIRF2804L through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF2804L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF2804L reliable?

The price and inventory of AUIRF2804L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF2804L is usually 5 days.

3.What payment methods are accepted for AUIRF2804L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF2804L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF2804L?

AUIRF2804L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF2804L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF2804L?

For technical support, including AUIRF2804L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF2804L requirements.

6.How does Aetrix verify that AUIRF2804L is sourced from the original manufacturer or authorized distributors?

All AUIRF2804L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF2804L meets industry standards.

7.What is the process for return or replacement of AUIRF2804L?

All AUIRF2804L units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF2804L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF2804L part is unused and in its original packaging.

Return procedure for AUIRF2804L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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