Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRF2804S-7P

Part No.:
AUIRF2804S-7P
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Datasheet:
AetrixAUIRF2804S-7P.pdf
Description:
MOSFET N-CH 40V 240A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,693

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRF2804S-7P from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2PAK-7L package, designed for high-current DC-DC conversion and motor drive stages. It delivers 40 V VDSS, 1.2 mΩ typ. RDS(on) at VGS = 10 V, 240 A package-limited continuous drain current, and supports 175 °C junction operation - enabling robust performance in engine control units and battery disconnect circuits.

For engineers reviewing the AUIRF2804S-7P datasheet, AUIRF2804S-7P pinout, AUIRF2804S-7P application, or AUIRF2804S-7P equivalent, key selection criteria include its 1.6 mΩ max. on-resistance, 1360 A pulsed drain rating, 630 mJ single-pulse avalanche energy, and D2PAK-7L thermal interface compatibility with heatsink-mounted automotive power stages.

Technical Context

This MOSFET employs advanced silicon processing to achieve ultra-low conduction loss while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Qg = 170–260 nC, Qgd = 71 nC) enables fast, controllable turn-on/turn-off transitions under high di/dt conditions typical of 48 V mild-hybrid systems.

The device integrates a co-packaged body diode with 1.3 V forward voltage at 160 A and 43–65 ns reverse recovery time, supporting synchronous rectification and freewheeling in bidirectional power converters. Thermal design is anchored by 0.50 °C/W junction-to-case resistance and validated repetitive avalanche operation up to TJmax.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 24–48 V automotive bus applications.
RDS(on) max1.6 mΩ @ VGS = 10 V - Limits conduction loss to ≤ 61 W at 240 A, critical for thermal management in compact ECU modules.
ID (package-limited)240 A @ TC = 25 °C - Real-world current ceiling constrained by leadframe and solder joint thermal capacity, not silicon.
EAS630 mJ - Energy-handling capability during single unclamped inductive switching events without failure, validated at TJ = 25 °C.
Qg170–260 nC - Total gate charge determining driver strength requirement; impacts switching loss and gate drive IC selection.
RθJC0.50 °C/W - Enables direct heatsink mounting with predictable junction temperature rise; essential for derating calculations.
TJ range−55 to +175 °C - Qualified for under-hood environments including transmission control and starter-generator inverters.

Pinout & Package

Package: D2PAK-7L (TO-263-7), surface-mount with exposed drain pad for low-inductance, high-current PCB routing and thermal conduction to heatsink or copper plane.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6Drain (common)Internally paralleled drain connections tied to exposed metal tab; primary current path and thermal interface.
7SourceLow-side return path for load current; referenced to PCB ground plane for gate drive stability.
GGateControl terminal requiring < ±20 V rating; driven via isolated gate driver to manage 260 nC charge and prevent Miller-induced turn-on.

Key Features

FeatureDesign Value
Ultra-low RDS(on)1.2 mΩ typ. reduces I²R losses by >40% vs. legacy 40 V MOSFETs, directly lowering heatsink size in 12 kW traction inverters.
175 °C rated junctionEnables operation in high-ambient zones (e.g., near exhaust manifolds) without derating, extending system lifetime in ADAS domain controllers.
Repetitive avalanche ratedValidated up to TJmax per Fig. 15/16 - allows reliable use in unregulated inductive loads like solenoid drivers without external snubbers.
Fast switching with low Qgd/QgQgd = 71 nC / Qg = 260 nC ratio of 27% minimizes Miller plateau duration, improving hard-switching efficiency in 100 kHz+ DC-DC stages.
Automotive qualificationAEC-Q101 compliant with full PPAP documentation support - meets functional safety requirements for ASIL-B power stage designs.

Applications

Engine Control Unit (ECU) High-Side Switch48 V Mild-Hybrid DC-DC Converter

Use Scenario: Controlling fuel injector or ignition coil actuation in gasoline direct injection systems with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side power switch handling 240 A peak load current with precise timing control and fast turn-off to prevent coil saturation.

Use Value: 1.6 mΩ RDS(on) limits voltage drop to < 0.4 V at 240 A, preserving injector solenoid drive margin and reducing thermal stress on PCB traces.

Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V vehicle networks.

IC Role / Device Role / Timing Role: Low-side switching element conducting 160 A continuous current with sub-100 ns fall time to minimize dead-time losses.

Use Value: 43 ns trr and 48 nC Qrr reduce body-diode conduction loss and associated heat generation during zero-voltage switching transitions.

Electric Power Steering (EPS) Motor InverterBattery Disconnect Switch (BMS)

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor with peak currents exceeding 300 A.

IC Role / Device Role / Timing Role: Phase-leg switch sustaining pulsed drain current up to 1360 A during torque surge events without thermal runaway.

Use Value: 630 mJ EAS and 0.50 °C/W RθJC enable safe clamping of inductive kickback during emergency stop, avoiding gate oxide damage.

Use Scenario: Solid-state main contactor replacement in 48 V battery management systems, performing hot-insertion and short-circuit protection.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch with integrated body diode supporting regenerative braking current flow.

Use Value: 175 °C TJ rating and AEC-Q101 qualification ensure reliability during sustained 240 A fault-clearing operations without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AG40 V, 0.95 mΩ RDS(on), DFN8 5x6 mm package, no exposed drain tabLimited to PCB-conducted cooling; unsuitable for bolted heatsink mountingSelect when space-constrained layout prioritizes footprint over thermal headroom.
IXTH300N04S540 V, 1.4 mΩ RDS(on), TO-247-3L, higher Qg (320 nC), non-automotive qualifiedRequires external avalanche protection; not certified for automotive production useAcceptable only for industrial prototype testing where AEC-Q101 compliance is waived.

Compared with STL220N4F7AG and IXTH300N04S5, the AUIRF2804S-7P uniquely combines D2PAK-7L mechanical robustness, AEC-Q101 certification, and 630 mJ avalanche energy - making it the only option qualified for production deployment in safety-critical automotive power stages requiring bolted heatsink integration.

Availability

AUIRF2804S-7P is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid converters, and electric power steering inverters requiring stable component supply across multi-year automotive production cycles.

Supply support for AUIRF2804S-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The AUIRF2804S-7P belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in under-hood and chassis-mounted power systems.

FAQ

What is the maximum continuous drain current for AUIRF2804S-7P at 100°C case temperature?

At TC = 100 °C, the continuous drain current is 230 A (silicon-limited) per the Absolute Maximum Ratings table. This reflects reduced carrier mobility and increased RDS(on) at elevated temperature, not package thermal limits - which remain governed by the 240 A rating at 25 °C case temperature.

Does AUIRF2804S-7P support gate drive at 5 V logic level?

No. The gate threshold voltage VGS(th) ranges from 2.0 to 4.0 V, but RDS(on) is specified only at VGS = 10 V. Driving at 5 V yields significantly higher on-resistance (>5 mΩ), excessive conduction loss, and risk of thermal runaway under 240 A load - 10 V minimum gate drive is required for rated performance.

How is the D2PAK-7L package thermally mounted in automotive applications?

The D2PAK-7L uses the exposed drain pad as the primary thermal path. It must be soldered to a large copper area (≥1000 mm²) or bolted to an aluminum heatsink using thermally conductive paste and M3 hardware. Per AN-994, recommended footprint includes 3× thermal vias (0.3 mm diameter, filled) beneath the pad to enhance PCB-side heat spreading.

Can AUIRF2804S-7P replace older IRF2804 in existing designs?

Yes, with caveats: AUIRF2804S-7P shares identical pinout and electrical specs but adds AEC-Q101 qualification, 175 °C rating, and improved avalanche ruggedness. Layout changes may be needed for the D2PAK-7L's larger body and 7-pin configuration versus the legacy TO-220AB 3-pin IRF2804 - verify PCB land pattern and gate drive loop inductance.

AUIRF2804S-7P Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 160A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
260 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6930 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
330W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK (7-Lead)

AUIRF2804S-7P FAQ

1.How can I place an order for AUIRF2804S-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF2804S-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF2804S-7P reliable?

The price and inventory of AUIRF2804S-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF2804S-7P is usually 5 days.

3.What payment methods are accepted for AUIRF2804S-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF2804S-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF2804S-7P?

AUIRF2804S-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF2804S-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF2804S-7P?

For technical support, including AUIRF2804S-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF2804S-7P requirements.

6.How does Aetrix verify that AUIRF2804S-7P is sourced from the original manufacturer or authorized distributors?

All AUIRF2804S-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF2804S-7P meets industry standards.

7.What is the process for return or replacement of AUIRF2804S-7P?

All AUIRF2804S-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF2804S-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF2804S-7P part is unused and in its original packaging.

Return procedure for AUIRF2804S-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRF2804S-7P Tags

  • AUIRF2804S-7P
  • AUIRF2804S-7P PDF
  • AUIRF2804S-7P Datasheet
  • AUIRF2804S-7P Specifications
  • AUIRF2804S-7P Images
  • Infineon Technologies
  • Infineon Technologies AUIRF2804S-7P
  • Buy AUIRF2804S-7P
  • AUIRF2804S-7P Price
  • AUIRF2804S-7P Distributor
  • AUIRF2804S-7P Supplier
  • AUIRF2804S-7P Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER