Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRF3004WL

Part No.:
AUIRF3004WL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Wide Leads
Datasheet:
AetrixAUIRF3004WL.pdf
Description:
MOSFET N-CH 40V 240A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,882

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRF3004WL from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel HEXFET Power MOSFET in TO-262 WideLead package, rated for 40 V V(BR)DSS, 1.27 mΩ typ. RDS(on), and 240 A continuous drain current (package-limited). It serves as a high-current, low-loss main switch in 12 V automotive power systems including starter solenoid drivers, battery disconnects, and DC motor control.

For engineers reviewing the AUIRF3004WL datasheet, AUIRF3004WL pinout, AUIRF3004WL application, or AUIRF3004WL equivalent, key selection criteria include its 175°C junction rating, 50% lower lead resistance vs. standard TO-262, repetitive avalanche capability up to 232 A, and RoHS-compliant lead-free construction - all validated for under-hood automotive environments.

Technical Context

This MOSFET employs advanced silicon process technology optimized for low RDS(on) and fast switching in high-current DC applications. Its gate threshold voltage (2.0–4.0 V) enables robust 10 V gate drive compatibility with standard automotive controllers, while the 140–210 nC total gate charge supports efficient PWM operation at frequencies up to 100 kHz.

The integrated body diode exhibits 41–62 ns reverse recovery time and 62–93 nC reverse recovery charge at 25°C, enabling reliable freewheeling in inductive loads. Thermal design is supported by a 0.40 °C/W junction-to-case thermal resistance and validated safe operating area up to 232 A at 25°C case temperature.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS40 V - Withstands up to 40 V drain-source blocking voltage before avalanche conduction begins.
RDS(on) typ.1.27 mΩ - Enables <1.3 W conduction loss at 200 A, critical for minimizing heat generation in high-current paths.
ID (Package)240 A - Maximum continuous drain current limited by package thermal and mechanical constraints, not silicon.
TJ max175°C - Rated junction temperature allows operation in hot under-hood locations without derating below ambient 125°C.
EAS2.5 mJ - Single-pulse avalanche energy rating ensures survivability during unclamped inductive switching events.
Qg140–210 nC - Gate charge range determines required driver strength and switching loss trade-offs in PWM designs.
Coss eff. (ER)2330 pF - Energy-related output capacitance directly impacts turn-off loss and snubber design in hard-switched topologies.

Pinout & Package

Supplied in TO-262 WideLead package - a modified TO-262 with widened leads reducing lead resistance by >50% versus standard TO-262, improving current handling and thermal performance in high-power automotive PCB layouts.

Pin/TerminalCircuit RoleDesign Meaning
GGateControl terminal; requires 10 V drive for full enhancement; internal gate resistance of 2.7 Ω limits dV/dt-induced ringing.
DDrainMain high-side power terminal; electrically connected to the metal tab (case); must be isolated from heatsink unless referenced to system ground.
SSourcePower return path and reference for gate drive; connects to PCB ground plane or low-side shunt resistor for current sensing.

Key Features

FeatureDesign Value
Ultra-low on-resistance1.27 mΩ typ. RDS(on) minimizes I²R losses in 200+ A load paths, enabling smaller heatsinks and higher efficiency.
50% lower lead resistanceWideLead TO-262 construction reduces parasitic resistance in package leads, lowering voltage drop and localized heating at high current.
175°C junction ratingSupports uninterrupted operation in engine compartment environments where ambient exceeds 125°C, eliminating need for external derating.
Repetitive avalanche ratedValidated for repeated unclamped inductive switching up to 232 A, enabling robustness in solenoid and motor drive circuits without snubbers.
Automotive qualificationComplies with AEC-Q101 stress test requirements, including HTGB, HTRB, and temperature cycling, ensuring long-term reliability in vehicles.

Applications

Starter Solenoid ControlBattery Disconnect Switch

Use Scenario: High-current engagement of vehicle starter motor via solenoid coil, requiring momentary 200+ A pulses at 12 V.

IC Role / Device Role / Timing Role: Main power switch controlling solenoid coil energization; operates in on/off mode with <100 μs switching transitions.

Use Value: Low RDS(on) and high avalanche energy prevent failure during coil de-energization transients; 175°C rating ensures reliability near hot engine blocks.

Use Scenario: Isolation of 12 V battery from chassis during service or fault conditions, carrying up to 240 A continuously.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactors; functions as bidirectional current-blocking element with fast fault response.

Use Value: Package-limited 240 A rating and wide-lead thermal path enable sustained conduction without thermal runaway; RoHS compliance meets modern OEM requirements.

DC Motor Drive (HVAC Blower)Engine Cooling Fan Controller

Use Scenario: PWM-controlled 12 V blower motor in HVAC system, delivering variable airflow with peak currents exceeding 180 A.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration; switches at 10–20 kHz with controlled dv/dt.

Use Value: Fast switching (tr = 220 ns, tf = 130 ns) and low Qg reduce PWM losses; body diode trr < 62 ns supports efficient freewheeling.

Use Scenario: Variable-speed radiator fan driven by 12 V supply, subject to load transients and ambient temperatures up to 105°C.

IC Role / Device Role / Timing Role: High-side power switch in fan driver module; handles inrush current and back-EMF during abrupt stops.

Use Value: Repetitive avalanche rating absorbs inductive kickback without external clamping; 0.40 °C/W RθJC simplifies thermal interface design on compact modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AG40 V, 220 A (package-limited), 1.35 mΩ RDS(on), TO-263 packageLacks automotive qualification; lower avalanche rating (1.8 mJ EAS); no wide-lead thermal advantageAcceptable for non-automotive industrial 12 V systems where AEC-Q101 is not mandated.
IRFB4115PBF150 V, 110 A, 4.5 mΩ RDS(on), TO-220 package, 175°C ratedHigher voltage rating but significantly higher RDS(on); unsuitable for 240 A conduction due to thermal limitsOnly viable if system requires >40 V blocking; otherwise excessive conduction loss and insufficient current capacity.

Compared with STL220N4F7AG and IRFB4115PBF, the AUIRF3004WL uniquely combines automotive qualification, 240 A package-limited current, ultra-low 1.27 mΩ RDS(on), and wide-lead thermal performance - making it irreplaceable in space-constrained, high-reliability 12 V automotive power switching.

Availability

AUIRF3004WL is available at Aetrix Electronics and suitable for automotive starter systems, battery management modules, and high-current DC motor drives requiring stable component supply across extended production lifecycles.

Supply support for AUIRF3004WL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with deep expertise in silicon and wide-bandgap device development.

The AUIRF3004WL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature 12 V power distribution and motor control in modern vehicles.

FAQ

What is the maximum continuous drain current for AUIRF3004WL at 100°C case temperature?

At TC = 100°C, the continuous drain current is 273 A (silicon-limited) per the datasheet's Absolute Maximum Ratings table. However, the package-limited rating remains 240 A regardless of temperature - meaning thermal design must ensure case temperature stays ≤85°C to sustain full 240 A without derating.

Does AUIRF3004WL require a gate resistor for automotive PWM operation?

Yes - a series gate resistor (typically 2.7–10 Ω) is recommended to dampen ringing caused by PCB trace inductance and the device's 2.7 Ω internal gate resistance. This controls dv/dt during switching and prevents false turn-on due to Miller effect, especially critical in noisy automotive environments.

Can AUIRF3004WL be used in parallel configurations for >240 A applications?

Parallel operation is feasible but requires careful layout: matched gate drive paths, symmetrical source routing, and individual Kelvin-source connections to ensure current sharing. The positive RDS(on) temperature coefficient (see Fig. 4) provides inherent thermal stability, but thermal coupling between devices must be minimized to avoid hotspot formation.

Is the TO-262 WideLead package compatible with standard TO-262 footprints?

No - the WideLead variant has wider leads and altered lead pitch versus standard TO-262. PCB land patterns must be updated to match the manufacturer's specified outline (see www.infineon.com/AUIRF3004WL/package-drawing). Using a standard TO-262 footprint risks solder joint fatigue and increased thermal resistance due to poor lead contact area.

AUIRF3004WL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Wide Leads
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 195A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
210 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9450 pF @ 32 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-262-3 Wide

AUIRF3004WL FAQ

1.How can I place an order for AUIRF3004WL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3004WL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3004WL reliable?

The price and inventory of AUIRF3004WL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3004WL is usually 5 days.

3.What payment methods are accepted for AUIRF3004WL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3004WL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3004WL?

AUIRF3004WL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3004WL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3004WL?

For technical support, including AUIRF3004WL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3004WL requirements.

6.How does Aetrix verify that AUIRF3004WL is sourced from the original manufacturer or authorized distributors?

All AUIRF3004WL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3004WL meets industry standards.

7.What is the process for return or replacement of AUIRF3004WL?

All AUIRF3004WL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3004WL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3004WL part is unused and in its original packaging.

Return procedure for AUIRF3004WL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRF3004WL Tags

  • AUIRF3004WL
  • AUIRF3004WL PDF
  • AUIRF3004WL Datasheet
  • AUIRF3004WL Specifications
  • AUIRF3004WL Images
  • Infineon Technologies
  • Infineon Technologies AUIRF3004WL
  • Buy AUIRF3004WL
  • AUIRF3004WL Price
  • AUIRF3004WL Distributor
  • AUIRF3004WL Supplier
  • AUIRF3004WL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER