Infineon Technologies AUIRF3205Z
- Part No.:
- AUIRF3205Z
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
AUIRF3205Z.pdf
- Description:
- MOSFET N-CH 55V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:6
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Product details
Overview
AUIRF3205Z from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 55 V VDSS, 6.5 mΩ RDS(on) max at VGS = 10 V and ID = 66 A, with 175°C maximum junction temperature and 440 A pulsed drain current capability. It serves as a high-efficiency main power switch in 12 V automotive DC-DC converters, motor control inverters, and battery disconnect circuits.
For engineers reviewing the AUIRF3205Z datasheet, AUIRF3205Z pinout, AUIRF3205Z application, or AUIRF3205Z equivalent, key selection criteria include its ultra-low on-resistance under automotive thermal constraints, validated repetitive avalanche performance up to Tjmax, and RoHS-compliant lead-free construction qualified per AEC-Q101 standards.
Technical Context
This MOSFET employs advanced silicon processing to achieve 4.9 mΩ typical RDS(on) at 10 V gate drive while maintaining robust unclamped inductive switching capability-tested to 250 mJ single-pulse avalanche energy with 66 A IAS and 0.08 mH load inductance. Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on across automotive temperature range (−55°C to +175°C).
Dynamic parameters include 76 nC total gate charge, 30 nC gate-to-drain charge, and fast switching times (td(on) = 18 ns, tf = 67 ns) under 6.8 Ω gate resistance, enabling high-frequency operation in synchronous buck regulators and BLDC motor gate drivers without excessive drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage in off-state; supports 12 V automotive systems with ≥2× safety margin against load-dump transients. |
| RDS(on) max | 6.5 mΩ @ VGS = 10 V, ID = 66 A - Enables ≤0.43 W conduction loss at 80 A continuous, critical for thermally constrained engine bay layouts. |
| ID (package-limited) | 75 A @ TC = 25°C - Defines maximum steady-state current with standard heatsinking; derates linearly at 1.1 W/°C above 25°C case temperature. |
| EAS tested | 250 mJ - Validated single-pulse avalanche energy at TJ = 25°C, L = 0.08 mH, IAS = 66 A; enables reliable operation during inductive turn-off in motor drives. |
| TJ max | +175°C - Junction temperature rating aligned with AEC-Q101 Grade 0; allows direct mounting on hot surfaces (e.g., transmission housings) without thermal derating. |
| Qg | 76 nC typ. - Total gate charge determines required gate driver peak current (e.g., >11 A for 7 ns rise time), impacting driver IC selection in high-frequency designs. |
| RθJC | 0.90 °C/W - Junction-to-case thermal resistance confirms efficient heat transfer to heatsink; enables 170 W power dissipation at ΔT = 153°C. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting. Tab is electrically connected to drain; mounting screw provides mechanical fixation and thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left) | Source (S) | Main current return path; low-inductance connection essential for minimizing switching oscillation and body diode reverse recovery stress. |
| Pin 2 (Center) | Gate (G) | High-impedance control terminal; requires <100 nF local bypass and series resistor (6.8 Ω typical) to damp ringing and limit dv/dt-induced turn-on. |
| Pin 3 (Right) | Drain (D) | High-current output node; internally bonded to metal tab-must be electrically isolated from heatsink unless system ground reference permits. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 4.9 mΩ typical at 10 V drive-reduces conduction losses by >30% vs. legacy 8 mΩ automotive MOSFETs at same current density. |
| Repetitive avalanche rated | Validated up to Tjmax per Fig.12a–12b and AN-1005-enables elimination of external snubbers in solenoid and relay driver applications. |
| 175°C operating junction | Rated for continuous operation at full current up to ambient +150°C with proper heatsinking-meets under-hood thermal requirements without derating. |
| Fast switching with low Qgd/Qg | 30 nC / 76 nC ratio = 0.39-minimizes Miller plateau duration, improving immunity to false turn-on during high dv/dt commutation. |
| AEC-Q101 qualified | Tested per stress conditions including HTOL, TC, UHAST, and ESD HBM ≥2 kV-ensures reliability in safety-critical automotive subsystems. |
Applications
| Engine Start-Stop System | Automotive HVAC Blower Control |
|---|---|
Use Scenario: High-side switching of 12 V starter motor solenoid and auxiliary loads during micro-hybrid stop/start cycles with frequent 100+ A inrush currents. IC Role / Device Role / Timing Role: Main power switch handling bidirectional current flow during cranking and regenerative braking phases; operates in hard-switched mode with <10 µs turn-off. Use Value: 250 mJ avalanche rating absorbs inductive kickback without clamping diodes; 175°C rating sustains operation during extended idling with under-hood temperatures >105°C. |
Use Scenario: PWM-controlled 12 V DC fan motor driving cabin air circulation, requiring variable speed and stall protection. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration; modulated at 20–25 kHz to minimize audible noise while maintaining torque linearity. Use Value: 6.5 mΩ RDS(on) limits conduction loss to <0.5 W at 75 A stall current; fast 67 ns fall time prevents shoot-through during bridge dead-time transitions. |
| 12 V–48 V Bi-directional DC-DC Converter | Electric Power Steering (EPS) Motor Driver |
Use Scenario: Synchronous rectification in automotive mild-hybrid boost converter linking 12 V battery and 48 V Li-ion storage bank. IC Role / Device Role / Timing Role: High-side synchronous FET in buck-boost topology; switched at 100–200 kHz with precise gate timing to minimize body diode conduction. Use Value: 3450 pF Ciss and 310 pF Crss enable efficient zero-voltage switching (ZVS) assist; low Qgd reduces gate drive power by 22% vs. comparable 8 mΩ devices. |
Use Scenario: Three-phase inverter leg for 12 V brushless DC motor delivering steering assist torque up to 15 N·m. IC Role / Device Role / Timing Role: Phase-leg low-side switch operating in six-step commutation; subjected to 440 A pulsed current during fault conditions. Use Value: 440 A IDM rating withstands short-circuit events per ISO 16750-2; 75 A package-limited current supports continuous 30 A RMS phase current with forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | 55 V, 2.2 mΩ RDS(on), DFN5x6 package, 175°C rated, but only 130 A ID (package-limited) | Requires PCB-level thermal management instead of bolt-on heatsink; unsuitable for TO-220 footprint replacement | Select when board space is constrained and thermal interface uses copper pour; avoid if mechanical mounting or legacy TO-220 socket required. |
| IRF3205PBF | 55 V, 8.0 mΩ RDS(on), TO-220AB, non-automotive grade, 175°C, no AEC-Q101 qualification | Lacks avalanche validation and high-temp reliability testing; not approved for safety-critical vehicle systems | Acceptable for cost-sensitive industrial or aftermarket accessories where AEC-Q101 compliance is not mandated. |
Compared with STL220N5LF8AG and IRF3205PBF, AUIRF3205Z uniquely balances ultra-low on-resistance (6.5 mΩ), TO-220AB mechanical compatibility, and full AEC-Q101 qualification-making it the only choice for production automotive power stages requiring both thermal headroom and regulatory traceability.
Availability
AUIRF3205Z is available at Aetrix Electronics and suitable for engine control units, electric power steering modules, and 12 V–48 V bi-directional DC-DC converters requiring stable component supply across multi-year automotive production programs.
Supply support for AUIRF3205Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRF3205Z belongs to the automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V vehicle electrical systems demanding robustness against thermal cycling, voltage transients, and mechanical vibration.
FAQ
Is AUIRF3205Z pin-compatible with IRF3205?
Yes-AUIRF3205Z uses the identical TO-220AB package with source-gate-drain pinout (left-to-right: S-G-D). However, it features tighter RDS(on) specification (6.5 mΩ vs. 8.0 mΩ), higher avalanche energy rating (250 mJ vs. 180 mJ), and AEC-Q101 qualification absent in the commercial IRF3205. Mechanical substitution is possible, but automotive use requires validation of the full qualification scope.
What is the recommended gate resistor value for AUIRF3205Z in a 100 kHz motor inverter?
A 6.8 Ω gate resistor is specified in the datasheet for switching characterization (td(off) = 45 ns, tf = 67 ns). For 100 kHz operation, this value balances switching loss reduction and EMI control; values below 4.7 Ω increase dv/dt stress and risk parasitic turn-on, while values above 10 Ω raise total switching loss by >15% at 66 A load current.
Can AUIRF3205Z be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient (0.051 V/°C) enables inherent current sharing. Parallel operation requires matched layout (identical trace length/width), individual gate resistors (≤10 Ω), and thermal coupling via shared heatsink. Derate total current by 15% versus sum of individual ratings to account for thermal imbalance.
Does AUIRF3205Z require a negative gate voltage for reliable turn-off in high-noise automotive environments?
No-its gate threshold voltage (2.0–4.0 V) and 20 V maximum VGS rating allow robust turn-off with 0 V gate drive. However, applying −5 V enhances noise immunity during cranking transients; the device supports ±20 V VGS, and −5 V bias reduces risk of spurious turn-on from coupled EMI without increasing gate driver complexity.
AUIRF3205Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 66A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
AUIRF3205Z FAQ
1.How can I place an order for AUIRF3205Z through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF3205Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF3205Z reliable?
The price and inventory of AUIRF3205Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3205Z is usually 5 days.
3.What payment methods are accepted for AUIRF3205Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3205Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF3205Z?
AUIRF3205Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF3205Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF3205Z?
For technical support, including AUIRF3205Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3205Z requirements.
6.How does Aetrix verify that AUIRF3205Z is sourced from the original manufacturer or authorized distributors?
All AUIRF3205Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3205Z meets industry standards.
7.What is the process for return or replacement of AUIRF3205Z?
All AUIRF3205Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3205Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF3205Z part is unused and in its original packaging.
Return procedure for AUIRF3205Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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