Infineon Technologies AUIRF3305
- Part No.:
- AUIRF3305
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
AUIRF3305.pdf
- Description:
- MOSFET N-CH 55V 140A TO220
- Quantity:
- Payment:

- Shipping:

Inventory:9,719
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Product details
Overview
AUIRF3305 from Infineon Technologies (formerly International Rectifier) is an automotive-qualified N-channel HEXFET® Power MOSFET in TO-220AB package, designed for high-current DC-DC conversion, motor control, and load switching in 12 V/24 V automotive systems. It delivers 140 A continuous drain current at 25°C, 8 mΩ RDS(on) at VGS = 10 V, 55 V V(BR)DSS, and full repetitive avalanche rating up to TJmax = 175°C.
For engineers reviewing the AUIRF3305 datasheet, AUIRF3305 pinout, AUIRF3305 application, or AUIRF3305 equivalent, key selection criteria include its low conduction loss, fast switching (tr = 88 ns, tf = 34 ns), rugged unclamped inductive switching capability, and AEC-Q101 qualification for under-hood environments.
Technical Context
This MOSFET employs advanced planar silicon technology optimized for low on-resistance per die area and robust dynamic dV/dt immunity. Its gate charge profile (Qg = 100–150 nC, Qgd = 45 nC) supports efficient hard-switching in synchronous buck converters and H-bridge motor drivers.
The integrated body diode exhibits low forward voltage (VSD ≤ 1.3 V at 75 A) and controlled reverse recovery (Qrr = 130–190 nC, trr = 57–86 ns), enabling reliable freewheeling in inductive loads without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55 V - Withstands transient overvoltage spikes common in 24 V automotive battery systems. |
| RDS(on) max | 8 mΩ @ VGS = 10 V - Enables <1.1 W conduction loss at 100 A, reducing heatsink requirements. |
| ID cont @ TC = 25°C | 140 A - Supports high-power solenoid, pump, and fan drivers without parallel devices. |
| EAS | 140 mJ - Rated single-pulse avalanche energy ensures survival during inductive turn-off transients. |
| Qg | 100–150 nC - Determines gate driver power requirement and switching loss trade-off in PWM operation. |
| TJ range | −55°C to +175°C - Validated for engine compartment mounting with no derating below 150°C ambient. |
| Thermal RθJC | 0.45 °C/W - Enables direct heatsink mounting with predictable junction temperature rise under load. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 10 lbf·in (1.1 N·m) screw torque rating. Thermal path optimized via case-to-sink interface (RθCS = 0.50 °C/W with greased surface).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current output terminal | Electrically connected to metal tab; requires insulated mounting hardware when not referenced to heatsink ground. |
| Source | Power return / reference node | Low-inductance source path (LS = 7.5 nH); critical for minimizing shoot-through risk in half-bridge layouts. |
| Gate | Control input | High-impedance CMOS-compatible input (VGS(th) = 2.0–4.0 V); requires gate resistor (RG ≥ 2.6 Ω) to damp oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified with MSL 3L, ESD HBM Class H2 (4 kV), CDM Class C5 (1.125 kV). |
| Fast switching | tr = 88 ns, tf = 34 ns at ID = 75 A - Reduces switching losses in 20–100 kHz SMPS designs. |
| Repetitive avalanche rated | EAR = 500 mJ at TJ = 25°C - Allows safe operation in unclamped inductive switching without external clamping. |
| Low gate charge | Qgs = 21 nC, Qgd = 45 nC - Minimizes Miller-induced false turn-on and enables compact gate driver sizing. |
| Body diode performance | Qrr = 130–190 nC, trr = 57–86 ns - Supports zero-voltage switching (ZVS) transitions in resonant topologies. |
Applications
| Engine Start-Stop Control | Automotive DC-DC Converter |
|---|---|
Use Scenario: Managing battery disconnect and reconnection during engine cranking and restart cycles in 12 V micro-hybrid systems. IC Role / Device Role / Timing Role: High-side load switch controlling main battery feed to starter relay and ECU power rails. Use Value: 140 A rating handles peak cranking surge; 175°C TJ rating ensures reliability during extended hot-soak conditions. | Use Scenario: Primary switch in 12 V → 5 V/3.3 V buck converter supplying infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (100 kHz) step-down regulator with low RDS(on) minimizing conduction loss. Use Value: 8 mΩ RDS(on) reduces thermal load by >30% vs. comparable 10 mΩ parts, enabling smaller heatsinks. |
| Electric Power Steering (EPS) Motor Driver | 12 V Automotive Lighting Control |
Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS assist motor. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional regenerative current during torque reversal. Use Value: Fully rated avalanche capability absorbs back-EMF spikes during rapid deceleration without failure. | Use Scenario: PWM-controlled headlight dimming and LED matrix switching in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: High-current, low-loss switch replacing mechanical relays for precise brightness control. Use Value: Fast tf = 34 ns enables clean 1–2 kHz PWM edges, eliminating audible coil whine in magnetic components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V V(BR)DSS, 2.2 mΩ RDS(on), PowerFLAT 5x6 package | Limited to 12 V systems; unsuitable for 24 V commercial vehicle applications | Select only for space-constrained 12 V modules where lower voltage rating is acceptable. |
| IXTH120N25L2 | 25 V V(BR)DSS, 1.8 mΩ RDS(on), TO-247 package | Lower breakdown voltage; higher thermal resistance (RθJC = 0.55 °C/W) | Prefer for ultra-low RDS(on) needs in 12 V systems where board space allows TO-247 footprint. |
Compared with STL220N4F7AG and IXTH120N25L2, AUIRF3305 uniquely balances 55 V rating, TO-220AB manufacturability, and AEC-Q101 compliance-making it the only choice for cost-sensitive, thermally demanding 24 V automotive load switches requiring field-proven ruggedness.
Availability
AUIRF3305 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for AUIRF3305 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap device design.
AUIRF3305 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in harsh under-hood environments including start-stop, EPS, and battery management systems.
FAQ
Is AUIRF3305 suitable for synchronous rectification in automotive DC-DC converters?
Yes. With 8 mΩ RDS(on) at 10 V gate drive and low Qgd/Qgs ratio, AUIRF3305 minimizes conduction and switching losses in 100–300 kHz synchronous buck stages. Its 175°C TJ rating and AEC-Q101 qualification ensure robust operation in thermally constrained converter modules near engine compartments.
What is the maximum recommended gate resistor value for hard-switching applications?
The datasheet specifies RG = 2.6 Ω for avalanche testing, but typical hard-switching designs use 5–10 Ω to balance switching speed and gate ringing suppression. Values above 15 Ω increase ton/toff significantly and raise switching loss; values below 2 Ω risk overshoot and gate driver overstress due to Qg = 100–150 nC.
Does AUIRF3305 require a negative gate turn-off voltage in H-bridge configurations?
No. Its VGS(th) of 2.0–4.0 V and low leakage (IGSS ≤ 200 nA) allow reliable turn-off with 0 V gate drive. However, applying −5 V improves noise immunity in high-dV/dt motor drive environments and prevents unintended turn-on from capacitive coupling in high-side configurations.
Can AUIRF3305 replace AUIRF3205 in existing designs?
Yes, with validation. Both share TO-220AB package and pinout, but AUIRF3305 offers 55 V V(BR)DSS (vs. 55 V same), identical 8 mΩ RDS(on), and improved 140 A rating (vs. 110 A). Key upgrade benefits include higher avalanche energy (140 mJ vs. 95 mJ) and tighter VGS(th) distribution-ideal for designs needing margin in hot-cranking scenarios.
AUIRF3305 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 330W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
AUIRF3305 FAQ
1.How can I place an order for AUIRF3305 through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF3305 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF3305 reliable?
The price and inventory of AUIRF3305 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3305 is usually 5 days.
3.What payment methods are accepted for AUIRF3305?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3305 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF3305?
AUIRF3305 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF3305 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF3305?
For technical support, including AUIRF3305 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3305 requirements.
6.How does Aetrix verify that AUIRF3305 is sourced from the original manufacturer or authorized distributors?
All AUIRF3305 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3305 meets industry standards.
7.What is the process for return or replacement of AUIRF3305?
All AUIRF3305 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3305, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF3305 part is unused and in its original packaging.
Return procedure for AUIRF3305:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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