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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF3315S

Name: AUIRF3315S
Brand: Infineon Technologies
SKU: AUIRF3315S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF3315S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF3315S.pdf

Description:: MOSFET N-CH 150V 21A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF3315S from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for 150V V_DS, 82 mΩ R_DS(on) max at V_GS = 10 V and I_D = 12 A, with 175°C maximum junction temperature and full avalanche rating. It serves as a high-efficiency main or synchronous rectifier switch in 48V automotive DC-DC converters and motor control inverters.

For engineers reviewing the AUIRF3315S datasheet, AUIRF3315S pinout, AUIRF3315S application, or AUIRF3315S equivalent, key selection criteria include its 150V breakdown voltage, 21A continuous drain current at T_C = 25°C, 95 nC total gate charge, 1.6°C/W junction-to-case thermal resistance, and automotive qualification per AEC-Q101.

Technical Context

This device employs advanced planar silicon process technology to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its dynamic dV/dt rating of 2.5 V/ns and 350 mJ single-pulse avalanche energy support robust operation in noisy automotive power systems.

The MOSFET features fast switching with 9.6 ns turn-on delay, 32 ns rise time, and 49 ns turn-off delay under standard test conditions (V_DD = 75 V, R_G = 5.1 Ω), enabled by low input capacitance (1300 pF C_iss) and optimized gate charge distribution (11 nC Qgs, 47 nC Qgd).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48V automotive bus with margin.
R_DS(on) max	82 mΩ @ V_GS = 10 V, I_D = 12 A - Enables <1.0 W conduction loss at 12 A, critical for thermally constrained modules.
I_D cont. @ T_C = 25°C	21 A - Supports high-current load switching without external heatsink in PCB-mounted configurations.
E_AS	350 mJ - Absorbs unclamped inductive energy during fault events without failure, enhancing system safety.
Q_g	95 nC - Determines gate drive power requirement; requires ≥1 A peak gate current for 100 ns switching transitions.
R_θJC	1.6 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad, supporting >60 W dissipation at ΔT = 100°C.
T_J max	175°C - Certified for under-hood operation in engine control units and transmission control modules.

Pinout & Package

Package: D2Pak (TO-263AB), surface-mount with isolated gate, exposed drain pad for thermal and electrical connection. Dimensions per IR package drawing: 10.67 × 9.65 × 4.83 mm (0.420 × 0.380 × 0.190 in), lead-free and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V/5 V microcontrollers.
Drain (D)	High-side power terminal	Connected to exposed copper pad on bottom of package; carries main load current and provides primary thermal path to PCB/heatsink.
Source (S)	Reference node	Serves as return path for drain current and gate drive reference; internal source inductance (7.5 nH) affects high-speed switching ringing.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified for engine bay and transmission control applications with guaranteed reliability at 175°C junction temperature.
Full avalanche rating	Rated for repetitive avalanche up to T_Jmax; supports robust operation in inductive load switching without external snubbers.
Low dynamic dV/dt	2.5 V/ns peak diode recovery dV/dt prevents false turn-on in high-noise environments like starter motors and alternators.
Fast body diode	174–260 ns reverse recovery time (t_rr) and 1.2–1.7 µC Q_rr enable efficient synchronous rectification in buck converters.
Thermal performance	1.6°C/W R_θJC allows >60 W continuous power dissipation when mounted on copper area per AN-994 footprint guidelines.

Applications

Automotive Engine Control Unit (ECU)

48V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch for fuel injector driver circuit operating at 12–14 V battery supply with 1 ms pulse width.

IC Role / Device Role / Timing Role: Power MOSFET acting as controlled current sink; switches 5–10 A peak load with <100 ns timing precision.

Use Value: 82 mΩ R_DS(on) minimizes voltage drop and self-heating during repeated injection pulses, ensuring consistent fuel delivery across ambient temperatures from −40°C to 150°C.

Use Scenario: Synchronous rectifier in secondary side of isolated bidirectional LLC resonant converter interfacing 48V battery and 12V auxiliary network.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode; commutated at 200–500 kHz with precise gate timing.

Use Value: Body diode t_rr ≤ 260 ns and Q_rr ≤ 1.7 µC reduce switching losses and EMI compared to discrete diodes, improving efficiency by ≥1.2% at 5 kW output.

Electric Power Steering (EPS) Motor Inverter

On-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge high-side switch in three-phase inverter driving 300–500 W brushless DC motor for steering assist.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element; subjected to 150 V transients during regenerative braking.

Use Value: 350 mJ E_AS and 12 A I_AR allow safe clamping of inductive kickback without derating, eliminating need for external TVS protection.

Use Scenario: Active front-end (AFE) switch in PFC boost stage of 6.6 kW OBC, operating at 65 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching power switch handling 15–20 A RMS current; gate driven by isolated SiC driver.

Use Value: 95 nC Q_g enables low gate drive loss at high frequency, while 150 V V_DS provides sufficient margin over 400 V bus with transient overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	100 V V_DS, 5.5 mΩ R_DS(on), TO-220FP package, lower voltage rating	Limited to 24–48 V systems; unsuitable for 150 V transient-prone automotive loads	Select only if system bus voltage remains ≤80 V and thermal budget permits larger package footprint.
IPB180N15N3 G	150 V V_DS, 7.5 mΩ R_DS(on), TO-263-7 package, higher current (180 A pulsed)	Higher gate charge (135 nC) increases driver complexity; requires larger PCB layout for 7-pin variant	Prefer for high-power traction inverters where conduction loss dominates, but verify gate drive capability and layout space.

Compared with STL120N10F7 and IPB180N15N3 G, the AUIRF3315S delivers optimal balance of 150 V ruggedness, 82 mΩ on-resistance, and 95 nC gate charge in a proven D2Pak automotive package-making it ideal for mid-power engine control and hybrid DC-DC stages where reliability and thermal manageability are prioritized over ultra-low R_DS(on).

Availability

AUIRF3315S is available at Aetrix Electronics and suitable for automotive engine control units, 48V mild hybrid DC-DC converters, and electric power steering motor inverters requiring stable component supply across extended product lifecycles.

Supply support for AUIRF3315S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The AUIRF3315S belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

Is AUIRF3315S pin-compatible with standard D2Pak footprints?

Yes. The AUIRF3315S uses the industry-standard D2Pak (TO-263AB) outline with 3 leads (G, D, S) and an exposed drain pad. Its mechanical dimensions (10.67 × 9.65 mm) and land pattern match IPC-7351B SO-263AB recommendations, enabling drop-in replacement in existing D2Pak layouts.

What is the maximum recommended gate resistor for reliable switching?

For safe operation with minimal oscillation, a gate resistor of 5.1 Ω is specified in the datasheet for switching time measurements. Using >10 Ω increases turn-off delay and may cause shoot-through in half-bridge configurations; values below 2.2 Ω require careful PCB layout to avoid gate loop inductance-induced ringing.

Does AUIRF3315S support paralleling for higher current capacity?

Yes, but with strict layout constraints: matched gate drive paths, symmetrical source inductance (<1 nH difference), and individual current-sense resistors. Thermal coupling must be uniform across devices, and gate resistors should be individually placed to prevent cross-talk. Derate total current by 20% for two devices in parallel.

Can AUIRF3315S be used in non-automotive industrial applications?

Yes. While AEC-Q101 qualified, its 175°C T_Jmax, 150 V rating, and full avalanche capability make it suitable for industrial motor drives, UPS systems, and telecom power supplies where high reliability and transient robustness are required-provided board layout and thermal design meet Infineon's AN-994 guidelines.

AUIRF3315S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRF3315S FAQ

1.How can I place an order for AUIRF3315S through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3315S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3315S reliable?

The price and inventory of AUIRF3315S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3315S is usually 5 days.

3.What payment methods are accepted for AUIRF3315S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3315S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3315S?

AUIRF3315S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3315S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3315S?

For technical support, including AUIRF3315S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3315S requirements.

6.How does Aetrix verify that AUIRF3315S is sourced from the original manufacturer or authorized distributors?

All AUIRF3315S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3315S meets industry standards.

7.What is the process for return or replacement of AUIRF3315S?

All AUIRF3315S units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3315S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3315S part is unused and in its original packaging.

Return procedure for AUIRF3315S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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