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Infineon Technologies AUIRF3315STRL

Part No.:
AUIRF3315STRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixAUIRF3315STRL.pdf
Description:
MOSFET N-CH 150V 21A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,245

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Product details

Overview

AUIRF3315STRL from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for 150V VDS, 21A continuous drain current at TC = 25°C, and 82 mΩ RDS(on) at VGS = 10V. It operates up to 175°C junction temperature and is fully avalanche-rated for robustness in inductive switching circuits such as motor control and DC-DC converters.

For engineers reviewing the AUIRF3315STRL datasheet, AUIRF3315STRL pinout, AUIRF3315STRL application, or AUIRF3315STRL equivalent, key selection criteria include its 150V breakdown voltage, 82 mΩ on-resistance at 10V gate drive, 95 nC total gate charge, 2.0–4.0V gate threshold, and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs advanced planar silicon technology optimized for low conduction loss and fast switching in high-reliability automotive power stages. Its dynamic dV/dt rating of 2.5 V/ns and integral body diode with 174–260 ns reverse recovery time support hard-switched topologies under demanding thermal conditions.

The device features a thermally enhanced D2Pak package with RθJC = 1.6°C/W and RθJA = 40°C/W (PCB mounted), enabling 94W power dissipation at TC = 25°C. Repetitive avalanche energy is specified at 9.4 mJ, and single-pulse EAS reaches 350 mJ under defined test conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS150 V - Maximum drain-to-source blocking voltage for 12V/24V automotive systems with load dump margin.
RDS(on) max82 mΩ @ VGS = 10V, ID = 12A - Enables <1.0W conduction loss at 12A, critical for thermal management in compact modules.
ID cont. @ TC=25°C21 A - Sustains full-load current in engine control units and EPS without derating at case temperature ≤25°C.
Qg95 nC - Determines gate driver power requirement and switching loss in 100–500 kHz DC-DC applications.
EAS350 mJ - Supports unclamped inductive switching in solenoid drivers and motor phase-legs without external snubbers.
TJ range−55°C to +175°C - Meets under-hood temperature requirements for transmission control and battery disconnect switches.
VGS(th)2.0–4.0 V - Ensures reliable turn-on with standard 3.3V/5V logic-level gate drivers in microcontroller-based designs.

Pinout & Package

Package: D2Pak (TO-263AB), surface-mount, isolated tab (drain-connected), 3-terminal configuration with thermal pad on underside.

Pin/TerminalCircuit RoleDesign Meaning
Tab / Pin 2 (Drain)High-current drain connection and thermal pathElectrically tied to drain; requires soldered thermal pad for RθJC = 1.6°C/W performance.
Pin 1 (Gate)Control input for channel modulationLow-capacitance node (Ciss = 1300 pF); sensitive to layout-induced ringing during fast switching.
Pin 3 (Source)Reference node for gate drive and current returnConnects to power ground plane; internal source inductance (LS = 7.5 nH) affects di/dt during turn-off.

Key Features

FeatureDesign Value
Automotive qualificationAEC-Q101 qualified for engine bay, transmission, and chassis control modules requiring zero-failure field reliability.
Fully avalanche ratedRepetitive avalanche allowed up to TJmax; eliminates need for external clamping in inductive load switching.
Dynamic dV/dt immunity2.5 V/ns - Prevents false turn-on during high-speed voltage transients in noisy automotive environments.
Fast switchingTurn-off delay + fall time = 87 ns (RG = 5.1 Ω); reduces switching losses in 200 kHz+ SMPS designs.
Lead-free & RoHSCompliant with automotive ELV directive and global environmental regulations for vehicle production.

Applications

Engine Control Unit (ECU)Electric Power Steering (EPS)

Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12V/24V inductive loads with precise pulse-width modulated timing.

Use Value: 150V VDS withstands 120V load-dump transients; 82 mΩ RDS(on) minimizes heat generation during extended duty cycles.

Use Scenario: Half-bridge phase-leg switching in brushless DC motor drives for steering assist.

IC Role / Device Role / Timing Role: Low-side MOSFET in synchronous rectification topology with fast body-diode recovery.

Use Value: 174–260 ns trr and 1.2–1.7 µC Qrr reduce commutation losses and EMI during PWM transitions.

On-Board Charger (OBC)Battery Disconnect Switch

Use Scenario: Primary-side switching in LLC resonant converters for 3.3 kW AC/DC conversion.

IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) hard-switched power stage with gate charge-driven efficiency.

Use Value: 95 nC Qg enables efficient drive with low-power gate drivers; 175°C TJ supports sealed enclosure operation.

Use Scenario: Isolation of 12V/48V battery banks during fault conditions or maintenance.

IC Role / Device Role / Timing Role: Single-pole, high-current disconnect switch activated by safety controller.

Use Value: 350 mJ EAS rating ensures survival during sudden load disconnection with inductive back-EMF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150V automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL130N10F7100V VDS, 130A ID, 4.7 mΩ RDS(on), PowerFLAT 5x6 packageLimited to 12V systems; unsuitable for 24V/48V load dump or higher bus voltagesSelect only for cost-sensitive 12V applications where voltage margin is not required.
IPB180N15N3G150V VDS, 180A ID, 3.0 mΩ RDS(on), TO-263-7 package with Kelvin sourceHigher current density and lower RDS(on) but larger footprint and different gate drive sensitivityPrefer for high-efficiency traction inverters where conduction loss dominates over gate loss.

Compared with STL130N10F7 and IPB180N15N3G, AUIRF3315STRL offers balanced trade-offs: sufficient 150V margin for 24V automotive systems, proven avalanche ruggedness, and D2Pak thermal performance ideal for mid-power (10–30A) switching nodes without requiring Kelvin-source layout complexity.

Availability

AUIRF3315STRL is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and on-board chargers requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRF3315STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

AUIRF3315STRL belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability switching in harsh-temperature, high-voltage automotive subsystems including powertrain, chassis, and electrification.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRF3315STRL?

The absolute maximum VGS is ±20 V. Operation beyond this rating risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to −12 V to +15 V, with transient spikes clamped using Zener diodes or active gate control circuits.

Does AUIRF3315STRL require a heatsink in typical automotive applications?

Yes - when operating above 5A continuous current or in ambient temperatures >70°C, a copper pour or external heatsink is required to maintain TJ ≤ 175°C. The RθJA of 40°C/W assumes a 1"² FR-4 PCB; thermal simulation or IR imaging is recommended for final layout validation.

How does the body diode performance compare to discrete Schottky diodes?

The intrinsic body diode has VSD = 1.3 V at 12A and trr = 174–260 ns. While slower and higher forward drop than Schottky diodes, it is fully integrated and avalanche-rated - making it suitable for freewheeling in non-synchronous topologies where discrete diode placement and parasitic inductance are concerns.

Is AUIRF3315STRL compatible with standard D2Pak footprint libraries?

Yes - it uses the industry-standard TO-263AB (D2Pak) outline with 2.54 mm lead pitch and 10.67 mm × 9.65 mm body dimensions. Footprint files conform to IPC-7351B medium density and match Infineon's official package drawing revision 2015-11-13.

AUIRF3315STRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
82mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 94W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

AUIRF3315STRL FAQ

1.How can I place an order for AUIRF3315STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3315STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3315STRL reliable?

The price and inventory of AUIRF3315STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3315STRL is usually 5 days.

3.What payment methods are accepted for AUIRF3315STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3315STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3315STRL?

AUIRF3315STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3315STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3315STRL?

For technical support, including AUIRF3315STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3315STRL requirements.

6.How does Aetrix verify that AUIRF3315STRL is sourced from the original manufacturer or authorized distributors?

All AUIRF3315STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3315STRL meets industry standards.

7.What is the process for return or replacement of AUIRF3315STRL?

All AUIRF3315STRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3315STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3315STRL part is unused and in its original packaging.

Return procedure for AUIRF3315STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRF3315STRL Tags

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