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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF3710Z

Name: AUIRF3710Z
Brand: Infineon Technologies
SKU: AUIRF3710Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF3710Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AUIRF3710Z.pdf

Description:: MOSFET N-CH 100V 59A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF3710Z from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel HEXFET® Power MOSFET in TO-220AB package, rated for 100V V_DSS, 18 mΩ R_DS(on) at V_GS = 10 V, and 59 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, full avalanche rating, and fast switching with 82 nC total gate charge - deployed in high-reliability DC-DC converters, motor control inverters, and automotive body electronics.

For engineers reviewing the AUIRF3710Z datasheet, AUIRF3710Z pinout, AUIRF3710Z application, or AUIRF3710Z equivalent, key selection criteria include its AEC-Q101 qualification, repetitive avalanche capability up to T_jmax, low conduction loss at high current, and thermal performance under sustained 42 A operation at 100°C case temperature.

Technical Context

This MOSFET employs planar silicon process optimized for low R_DS(on)/area and robust unclamped inductive switching. Its 0.92°C/W junction-to-case thermal resistance enables high-power dissipation in compact TO-220AB mounting, while the 175°C operating limit supports under-hood automotive environments without derating penalties.

The device integrates a co-packaged body diode with 1.3 V forward voltage and 50–75 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate charge parameters (Q_gd = 27–40 nC, Q_gs = 19–28 nC) indicate moderate drive strength requirements compatible with standard gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands 100 V drain-source blocking voltage before avalanche onset, suitable for 48 V automotive systems with transient margin.
R_DS(on)	14–18 mΩ @ V_GS = 10 V - Enables ≤1.0 W conduction loss at 59 A, critical for thermally constrained power stages.
I_D (continuous)	59 A @ T_C = 25°C - Supports high-current loads such as starter relays and HVAC blowers without external heatsinking at ambient conditions.
E_AS	300 mJ - Single-pulse avalanche energy rating ensures survivability during inductive load turn-off transients in motor drives.
T_J max	175°C - Allows operation in engine compartment locations where ambient exceeds 125°C, per AEC-Q101 stress testing.
Q_g	82–120 nC - Determines gate driver current requirement (~1.6 A peak for 75 ns rise time), influencing driver IC selection and layout.
V_GS(th)	2.0–4.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level controllers when used with gate boost.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 160°C for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab - requires insulated mounting hardware when referenced to non-ground potentials.
Source	Return path for load current and reference for gate drive	Low-inductance connection point for Kelvin sensing or source-shunt current monitoring.
Gate	Control input for channel conduction	High-impedance node requiring low-impedance gate driver and RC snubber to suppress ringing from 7.5 nH internal source inductance.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified with MSL1 moisture sensitivity, H1C human-body ESD, and C3 charged-device model ratings.
Repetitive avalanche capability	Rated for unlimited repetitive avalanche events up to T_jmax, validated per AN-1005 with L = 0.27 mH, I_AS = 35 A, R_G = 25 Ω.
Thermal performance	0.92°C/W R_θJC enables 240 W power dissipation at ΔT = 220°C, supporting high-duty-cycle operation in sealed enclosures.
Body diode performance	1.3 V V_SD and 100–160 nC Q_rr allow efficient freewheeling in buck and half-bridge topologies without external Schottky.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems with 12 V supply and PWM frequencies up to 2 kHz.

IC Role / Device Role / Timing Role: Primary power switch controlling injector coil current; operates in saturated on-state with <100 ns turn-off delay to meet precise fuel metering timing.

Use Value: 175°C junction rating ensures reliability during extended idling with under-hood temperatures >105°C; 18 mΩ R_DS(on) minimizes resistive heating during 5–10 A steady-state coil hold current.

Use Scenario: Synchronous rectification stage in bidirectional 48 V/12 V DC-DC converter for start-stop and regenerative braking energy transfer.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge topology, switching at 100–300 kHz with zero-voltage transition.

Use Value: 82 nC Q_g and 27 nC Q_gd enable clean turn-on/turn-off with minimal Miller-induced shoot-through risk; 1.3 V body diode reduces dead-time losses.

Automotive HVAC Blower Motor Inverter

Commercial Vehicle Trailer Lighting Controller

Use Scenario: Three-phase inverter driving brushed or brushless blower motors in climate control systems, operating continuously at 40–60°C ambient.

IC Role / Device Role / Timing Role: High-current phase-leg switch handling 30–50 A peak motor currents; thermally coupled to aluminum heatsink via TO-220AB tab.

Use Value: 42 A I_D @ T_C = 100°C allows full-rated output without derating; 0.92°C/W R_θJC enables stable thermal equilibrium below 150°C junction temperature.

Use Scenario: Solid-state replacement for mechanical relays controlling LED trailer lights, subjected to load dump transients up to 60 V and ISO 7637-2 pulse 5a.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche energy absorption, activated by CAN-controlled microcontroller GPIO.

Use Value: 300 mJ E_AS absorbs 100 ms load-dump energy without failure; AEC-Q101 qualification guarantees 15-year field life in vibration-prone trailer harnesses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 2.2 mΩ R_DS(on), DFN8 5×6 mm package, 175°C rating	Surface-mount only; no isolated tab; higher current density but requires PCB copper area for thermal management	Select for space-constrained PCBs where TO-220AB footprint is prohibitive and thermal vias can be implemented.
IXFH50N10P	100 V, 20 mΩ R_DS(on), TO-247AC package, 175°C rating, 125 nC Q_g	Larger package with lower R_θJC (0.45°C/W), higher gate charge increases driver complexity	Select when >240 W continuous power dissipation is required and board space permits TO-247 mounting.

Compared with STL220N10F7 and IXFH50N10P, AUIRF3710Z offers optimal balance of through-hole manufacturability, thermal interface simplicity (isolated tab), and gate drive compatibility - making it preferred for legacy automotive production lines and service-replacement modules where TO-220AB remains the de facto standard.

Availability

AUIRF3710Z is available at Aetrix Electronics and suitable for automotive engine control units, 48 V mild hybrid converters, and HVAC blower motor inverters requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRF3710Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control solutions, with global manufacturing and quality certification aligned to IATF 16949.

AUIRF3710Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-temperature switching in engine bay and chassis-mounted electronic control units.

FAQ

Is AUIRF3710Z pin-compatible with standard TO-220AB MOSFETs?

Yes - AUIRF3710Z uses industry-standard TO-220AB mechanical dimensions and pinout (Drain-tab, Source, Gate), enabling drop-in replacement for other TO-220AB N-channel MOSFETs with matching voltage/current ratings. The isolated drain tab must be electrically insulated from heatsink unless referenced to system ground.

What is the maximum recommended gate resistor value for hard-switching applications?

For reliable switching at 100 kHz with minimal overshoot, a gate resistor of 10–25 Ω is recommended. Lower values (<10 Ω) reduce switching losses but increase gate driver stress; higher values (>33 Ω) extend turn-on/turn-off times beyond 100 ns, raising conduction loss in PWM applications.

Does AUIRF3710Z require external gate protection diodes?

No - the device incorporates internal gate oxide protection and is rated for ±20 V gate-source voltage. However, a 12–15 V Zener clamp between gate and source is recommended in noisy automotive environments to prevent V_GS excursions beyond absolute maximum ratings during load dump or ESD events.

Can AUIRF3710Z be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (1.5–2.0× increase from 25°C to 175°C) enables natural current sharing. For stable paralleling, use matched devices, identical gate drive paths, and symmetrical PCB layout with Kelvin source connections to minimize imbalance from stray inductance.

AUIRF3710Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

AUIRF3710Z FAQ

1.How can I place an order for AUIRF3710Z through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3710Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3710Z reliable?

The price and inventory of AUIRF3710Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3710Z is usually 5 days.

3.What payment methods are accepted for AUIRF3710Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3710Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3710Z?

AUIRF3710Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3710Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3710Z?

For technical support, including AUIRF3710Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3710Z requirements.

6.How does Aetrix verify that AUIRF3710Z is sourced from the original manufacturer or authorized distributors?

All AUIRF3710Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3710Z meets industry standards.

7.What is the process for return or replacement of AUIRF3710Z?

All AUIRF3710Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3710Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3710Z part is unused and in its original packaging.

Return procedure for AUIRF3710Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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