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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF3710ZS

Name: AUIRF3710ZS
Brand: Infineon Technologies
SKU: AUIRF3710ZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF3710ZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF3710ZS.pdf

Description:: MOSFET N-CH 100V 59A D2PAK

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Product details

Overview

AUIRF3710ZS from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel HEXFET® Power MOSFET in D2Pak package, rated for 100V V_DSS, 18 mΩ R_DS(on) at V_GS = 10 V, and 59 A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, full avalanche capability, and fast switching with 82 nC total gate charge - deployed in high-reliability DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the AUIRF3710ZS datasheet, AUIRF3710ZS pinout, AUIRF3710ZS application, or AUIRF3710ZS equivalent, key selection criteria include its 100V breakdown voltage, low conduction loss under high-current automotive loads, thermal robustness up to 175°C, and AEC-Q101 qualification for under-hood power switching.

Technical Context

This MOSFET employs planar silicon process technology optimized for low R_DS(on)/area and enhanced repetitive avalanche endurance. Its body diode exhibits 1.3 V forward voltage at 35 A and 50–75 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies.

The device operates with gate threshold voltage of 2.0–4.0 V and forward transconductance of 35 S, enabling robust drive compatibility with standard 10 V gate drivers. Thermal resistance R_θJC is 0.92 °C/W, allowing efficient heat transfer to heatsinks in constrained automotive mounting configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source voltage before avalanche onset; suitable for 48 V and 60 V nominal automotive bus systems.
R_DS(on)	18 mΩ max at V_GS = 10 V, T_J = 25°C - Enables <1.1 W conduction loss at 59 A, critical for thermally limited engine bay modules.
I_D (continuous)	59 A at T_C = 25°C - Supports high-current motor phase switching and solenoid drive without forced air cooling.
E_AS	300 mJ single-pulse avalanche energy - Absorbs inductive kickback from 0.27 mH loads at 35 A without failure, eliminating need for external snubbers.
Q_g	82–120 nC - Determines gate driver power requirement; compatible with common 1–2 A peak gate drivers in automotive ECUs.
T_J max	175°C - Meets under-hood ambient requirements per ISO 16750-4; enables operation in high-temperature engine compartments.
AEC-Q101	Qualified - Passed stress tests including HBM Class H1C, CDM Class C3, and temperature cycling for automotive electronics reliability.

Pinout & Package

Package: D2Pak (TO-263), surface-mount, isolated tab, RoHS-compliant lead-free finish. Designed for direct heatsink mounting via screw or thermal pad on PCB.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to exposed copper tab; must be electrically isolated from heatsink unless referenced to system ground.
Source	Return path for load current; reference for gate drive	Low-inductance connection point for current sensing and gate driver return; internal source inductance LS = 7.5 nH.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <200 nA leakage; driven by 10 V logic-level signal for full enhancement.

Key Features

Feature	Design Value
Low R_DS(on)	18 mΩ at 10 V drive reduces I²R losses in high-current automotive power stages, improving efficiency and thermal margin.
175°C operating junction temperature	Enables reliable operation in under-hood environments where ambient exceeds 125°C, meeting ISO 16750-4 thermal stress requirements.
Full avalanche rating	Rated for single-pulse E_AS = 300 mJ and repetitive avalanche up to T_Jmax, eliminating need for external clamping in inductive load circuits.
Fast switching with low Q_gd	40 nC Miller charge minimizes switching transition time and dv/dt-induced shoot-through risk in half-bridge configurations.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12–48 V fuel injectors with peak currents up to 50 A and pulse widths down to 1 ms.

IC Role / Device Role / Timing Role: Primary power switch controlling injector coil energization; operates in hard-switched PWM mode at 1–10 kHz.

Use Value: Low R_DS(on) and fast turn-off (tf = 56 ns) minimize dwell-time energy loss and enable precise fuel metering accuracy.

Use Scenario: Bidirectional PWM control of 24 V brushed blower motors delivering airflow up to 500 CFM in cabin climate systems.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in H-bridge configuration; handles 42 A continuous current during stall conditions.

Use Value: 175°C T_J rating ensures uninterrupted operation during prolonged high-load cabin heating cycles near hot engine components.

48 V Mild Hybrid Starter-Generator Interface

Commercial Vehicle ABS Solenoid Driver

Use Scenario: Isolation and current control between 48 V battery and starter-generator in P0/P1 hybrid architectures.

IC Role / Device Role / Timing Role: High-side protection switch in bidirectional power flow path; subjected to unclamped inductive transients during regenerative braking.

Use Value: 300 mJ E_AS and 240 A pulsed drain rating absorb worst-case inductive spikes without derating or external TVS.

Use Scenario: Driving 12 V ABS solenoid valves requiring 35 A peak current pulses with 100 μs rise time and strict EMI limits.

IC Role / Device Role / Timing Role: Low-inductance power switch with integrated body diode for freewheeling; mounted directly to metal chassis for EMC grounding.

Use Value: 7.5 nH internal source inductance and 50 ns trr reduce voltage overshoot and radiated emissions during valve de-energization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 2.2 mΩ R_DS(on), 220 A, TO-220FP package; lower R_DS(on) but higher Q_g (160 nC)	Higher current handling; unsuitable for D2Pak footprint or same thermal interface design	Select when board space allows TO-220FP and higher peak current is required; re-evaluate gate drive strength.
IXFH120N10L2	100 V, 10.5 mΩ R_DS(on), 120 A, TO-247 package; faster switching (Q_gd = 22 nC) but no AEC-Q101 certification	Superior dynamic performance but lacks automotive qualification; requires additional reliability validation	Choose for industrial motor drives where AEC-Q101 is not mandated; avoid in safety-critical automotive subsystems.

Compared with STL220N10F7 and IXFH120N10L2, AUIRF3710ZS offers the optimal balance of AEC-Q101 compliance, D2Pak mountability, and verified 175°C operation - making it uniquely suited for volume automotive production where footprint, qualification, and thermal reliability are jointly constrained.

Availability

AUIRF3710ZS is available at Aetrix Electronics and suitable for engine control units, HVAC motor controllers, 48 V mild hybrid interfaces, and ABS solenoid drivers requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRF3710ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap devices.

AUIRF3710ZS belongs to Infineon's automotive-qualified HEXFET® MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine, transmission, and chassis control systems.

FAQ

Is AUIRF3710ZS pin-compatible with AUIRF3710Z?

Yes - both share identical D2Pak (TO-263) package, pinout (Drain/Source/Gate), and thermal pad layout. The 'S' suffix denotes tape-and-reel packaging and minor process enhancements, but electrical and mechanical specifications remain fully interchangeable per Infineon's PD-97470 datasheet revision.

What is the maximum recommended gate resistor for driving AUIRF3710ZS in a 10 kHz PWM application?

For 10 kHz switching with 82 nC Q_g, a 10 Ω gate resistor provides ~820 ns turn-on delay and balances switching loss against EMI. At 1 A peak gate drive, this yields 10 V slew rate of ~1 V/ns - within safe dv/dt limits for automotive noise immunity without compromising thermal performance.

Does AUIRF3710ZS require a negative gate voltage for reliable turn-off in high-noise automotive environments?

No - its gate threshold voltage (2.0–4.0 V) and 200 nA IGSS ensure stable turn-off at 0 V gate bias. However, applying –5 V enhances noise immunity in high-dv/dt environments like ignition systems; the device supports ±20 V V_GS, per absolute maximum ratings.

Can AUIRF3710ZS replace IRF3710 in existing industrial designs?

Yes - AUIRF3710ZS matches IRF3710's 100 V/59 A/18 mΩ specs and TO-220AB pinout, but uses D2Pak packaging. For drop-in replacement, verify PCB footprint, thermal interface, and gate drive strength; note AUIRF3710ZS adds AEC-Q101 qualification and improved avalanche rating over legacy IRF3710.

AUIRF3710ZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRF3710ZS FAQ

1.How can I place an order for AUIRF3710ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3710ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3710ZS reliable?

The price and inventory of AUIRF3710ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3710ZS is usually 5 days.

3.What payment methods are accepted for AUIRF3710ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3710ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3710ZS?

AUIRF3710ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3710ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3710ZS?

For technical support, including AUIRF3710ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3710ZS requirements.

6.How does Aetrix verify that AUIRF3710ZS is sourced from the original manufacturer or authorized distributors?

All AUIRF3710ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3710ZS meets industry standards.

7.What is the process for return or replacement of AUIRF3710ZS?

All AUIRF3710ZS units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3710ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3710ZS part is unused and in its original packaging.

Return procedure for AUIRF3710ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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