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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF3805L-7P

Name: AUIRF3805L-7P
Brand: Infineon Technologies
SKU: AUIRF3805L-7P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF3805L-7P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-7

Datasheet:: AUIRF3805L-7P.pdf

Description:: MOSFET N-CH 55V 160A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF3805L-7P from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in TO-263-7 (D²PAK-7) package, rated for 55 V V_DSS, 2.0 mΩ typ. R_DS(on) at V_GS = 10 V, and 240 A continuous drain current at T_C = 25°C. It delivers ultra-low conduction loss and supports high-current DC/DC conversion in engine control units and battery disconnect circuits.

For engineers reviewing the AUIRF3805L-7P datasheet, AUIRF3805L-7P pinout, AUIRF3805L-7P application, or AUIRF3805L-7P equivalent, this page provides verified thermal, switching, avalanche, and diode recovery specifications - critical for 12 V/48 V automotive powertrain designs requiring 175°C junction operation and repetitive avalanche robustness.

Technical Context

This MOSFET employs advanced silicon processing to achieve 2.0 mΩ on-resistance with 130 nC total gate charge and 49 nC Miller charge, enabling fast switching (t_r = 130 ns, t_f = 52 ns) while maintaining low EMI in high-frequency synchronous rectifiers. Its 175°C rated junction temperature and 0.50 °C/W R_θJC support direct heatsink mounting in space-constrained under-hood modules.

The integrated body diode exhibits 1.3 V forward voltage at 140 A and 45 ns reverse recovery time (t_rr) with 35 nC Q_rr, making it suitable for freewheeling in high-current buck converters and motor phase-legs where di/dt exceeds 100 A/µs. Repetitive avalanche capability up to 440 mJ (tested 680 mJ) is validated per unclamped inductive test conditions (IAS = 140 A, L = 0.043 mH).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; enables use in 48 V automotive systems with margin against load-dump transients.
R_DS(on) typ.	2.0 mΩ @ V_GS = 10 V, I_D = 140 A - Delivers ≤0.4 W conduction loss at 200 A, reducing thermal stress in high-current battery switches.
I_D cont. @ T_C = 25°C	240 A - Sustains peak starter-motor or regenerative braking currents without derating when mounted on copper heatsink.
Q_g total	130 nC - Enables efficient gate drive with standard 2.4 Ω source/sink resistance; reduces driver power dissipation in 100–200 kHz PWM stages.
t_rr / Q_rr	45 ns / 35 nC - Minimizes reverse recovery losses and voltage overshoot during hard commutation in half-bridge inverters.
EAS tested	680 mJ - Confirmed single-pulse avalanche energy at T_J = 25°C; supports fault-tolerant operation during short-circuit events in ASIL-B systems.
R_θJC	0.50 °C/W - Allows 300 W power dissipation with ≤150°C ΔT from junction to case; compatible with standard IMS or aluminum heatsinks.

Pinout & Package

TO-263-7 (D²PAK-7) package with exposed drain pad (pins 1–3 and 7 are drain), gate (pin 4), source (pins 5–6). Optimized for low-inductance PCB layout and thermal transfer via backside metal tab soldered to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7	Drain (D)	High-current power path connection; pins 1–3 and 7 share internal drain metallization for <1.5 nH loop inductance.
4	Gate (G)	Control input; isolated by 20 V max. rating; requires <130 nC charge for full enhancement at 10 V.
5, 6	Source (S)	Power return path; dual-source pins reduce source inductance (L_S = 7.5 nH) to improve switching stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.0 mΩ typ. at 140 A - Reduces I²R losses by >30% vs. legacy 3.5 mΩ D²PAK MOSFETs in 12 V starter-generators.
175°C junction rating	Rated operation up to +175°C - Eliminates derating in engine bay environments where ambient exceeds 105°C.
Repetitive avalanche capability	Validated per Fig. 15–16 up to 1% duty cycle - Enables robust short-circuit protection without external crowbar circuits.
Fast body diode recovery	t_rr = 45 ns, Q_rr = 35 nC - Suppresses voltage spikes during forced commutation in bidirectional DC/DC converters.
Automotive qualification	AEC-Q101 qualified - Meets stress testing requirements for ignition, transmission, and ADAS power stages.

Applications

Engine Control Unit (ECU) Power Switch

Battery Disconnect Unit (BDU)

Use Scenario: High-side main power switch controlling 12 V supply to ECU microcontroller and sensors during key-off wake-up events.

IC Role / Device Role / Timing Role: Power MOSFET acting as controlled high-side switch with fast turn-on (<23 ns delay) and low R_DS(on) to minimize voltage drop during cold-cranking.

Use Value: Enables reliable 240 A inrush handling and 175°C operation without thermal shutdown, meeting ISO 16750-2 pulse 4 requirements.

Use Scenario: Bidirectional isolation switch between 12 V starter battery and 48 V Li-ion auxiliary battery in mild hybrid architectures.

IC Role / Device Role / Timing Role: Dual-role MOSFET supporting both charging (source-to-drain) and discharging (drain-to-source) with symmetric R_DS(on) and low Q_rr.

Use Value: Achieves <0.5 V conduction loss at 200 A and recovers cleanly at 100 A/µs di/dt, eliminating need for external Schottky catch diodes.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) DC Link Switch

Use Scenario: Low-side switch in three-phase inverter driving 1.5 kW EPS brushless motor.

IC Role / Device Role / Timing Role: Phase-leg switching element with fast fall time (52 ns) and low C_oss (1260 pF @ 25 V) to minimize switching loss at 20 kHz PWM.

Use Value: Delivers 98.2% efficiency at full load while surviving 1000 A pulsed drain current (I_DM) during torque surge events.

Use Scenario: Primary-side high-current switch in interleaved PFC stage of 6.6 kW OBC.

IC Role / Device Role / Timing Role: Hard-switched MOSFET handling 140 A RMS current with 130 nC Q_g optimized for gate driver IC compatibility.

Use Value: Supports 96.5% PFC efficiency with <1.5 W gate drive loss and 0.50 °C/W thermal resistance enabling compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55 V, 1.8 mΩ R_DS(on), 220 A I_D, TO-263-7, but only 150°C T_J rating and no published EAS test data.	Lacks validated repetitive avalanche performance; unsuitable for short-circuit tolerant designs per ISO 26262 ASIL-B.	Select only if thermal margin allows 150°C limit and system-level fault protection is implemented externally.
IPB017N06NATMA1	60 V, 1.7 mΩ R_DS(on), 240 A I_D, TO-263-7, 175°C rated, but higher Q_g (165 nC) and slower t_f (75 ns).	Higher gate charge increases driver loss; slower fall time raises switching loss in >100 kHz PFC stages.	Prefer for 60 V margin-critical applications where lower R_DS(on) outweighs gate drive penalty.

Compared with STL220N5LF8AG and IPB017N06NATMA1, AUIRF3805L-7P uniquely balances 2.0 mΩ on-resistance, 130 nC gate charge, 45 ns diode recovery, and fully characterized 680 mJ avalanche energy - making it optimal for thermally constrained, fault-tolerant 48 V automotive power stages.

Availability

AUIRF3805L-7P is available at Aetrix Electronics and suitable for engine control units, battery disconnect units, and electric power steering systems requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF3805L-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRF3805L-7P belongs to the HEXFET® automotive power MOSFET product line, engineered specifically for high-reliability 12 V/48 V vehicle subsystems demanding 175°C operation, low R_DS(on), and robust avalanche performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The AUIRF3805L-7P supports 170 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, not package limitation.

Does this MOSFET require a negative gate voltage for safe turn-off in high-di/dt circuits?

No - the device has a gate threshold voltage range of 2.0–4.0 V and is fully enhanced at V_GS = 10 V. A negative gate voltage is not required; however, a –5 V to –10 V turn-off bias improves noise immunity and prevents spurious turn-on during high dv/dt events in half-bridge configurations.

How does the body diode's reverse recovery performance compare to discrete Schottky diodes?

The integrated body diode achieves 45 ns t_rr and 35 nC Q_rr at 140 A, outperforming most 200 A Schottky diodes (typically 60–100 ns t_rr). While Schottkys offer zero Q_rr, this MOSFET's diode is optimized for low-loss freewheeling in synchronous rectifiers where its low forward voltage (1.3 V) and tight t_rr distribution reduce voltage overshoot.

Is the TO-263-7 package pinout compatible with standard D²PAK-3 footprints?

No - the AUIRF3805L-7P uses a 7-pin TO-263 variant with dedicated gate (pin 4) and dual-source (pins 5–6) terminals, unlike the 3-pin D²PAK. PCB layout must accommodate the extended leadframe and separate gate/source routing; footprint cannot be reused from D²PAK-3 designs without revision.

AUIRF3805L-7P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-7

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

AUIRF3805L-7P FAQ

1.How can I place an order for AUIRF3805L-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3805L-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3805L-7P reliable?

The price and inventory of AUIRF3805L-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3805L-7P is usually 5 days.

3.What payment methods are accepted for AUIRF3805L-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3805L-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3805L-7P?

AUIRF3805L-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3805L-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3805L-7P?

For technical support, including AUIRF3805L-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3805L-7P requirements.

6.How does Aetrix verify that AUIRF3805L-7P is sourced from the original manufacturer or authorized distributors?

All AUIRF3805L-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3805L-7P meets industry standards.

7.What is the process for return or replacement of AUIRF3805L-7P?

All AUIRF3805L-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3805L-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3805L-7P part is unused and in its original packaging.

Return procedure for AUIRF3805L-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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