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Infineon Technologies AUIRF3805S

Part No.:
AUIRF3805S
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixAUIRF3805S.pdf
Description:
MOSFET N-CH 55V 160A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,167

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Product details

Overview

AUIRF3805S from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 55 V VDS, 2.6 mΩ typ. RDS(on) at 10 V VGS, and 160 A continuous drain current (package-limited). It delivers ultra-low conduction loss, 175°C junction operation, and robust repetitive avalanche capability-used in high-current DC-DC converters and motor control stages of EV onboard chargers and 48V mild-hybrid systems.

For engineers reviewing the AUIRF3805S datasheet, AUIRF3805S pinout, AUIRF3805S application, or AUIRF3805S equivalent, key selection criteria include thermal performance under forced-air cooling, gate drive energy requirements (190 nC total Qg), body diode recovery behavior (36 ns trr), and compliance with AEC-Q101 stress testing for under-hood deployment.

Technical Context

This device employs Infineon's HEXFET® process to achieve silicon-limited on-resistance of 2.6 mΩ at 10 V gate drive while maintaining 55 V breakdown voltage and 175°C maximum junction temperature. Its low Ciss (7960 pF) and optimized Crss/Coss ratio support fast switching with controlled dV/dt during hard commutation.

The integrated body diode exhibits 1.3 V forward voltage at 75 A and 36 ns reverse recovery time-critical for synchronous rectification and freewheeling in high-frequency buck converters. Repetitive avalanche energy is thermally limited up to 200 mJ at TJ = 125°C per pulse, validated per unclamped inductive test (UIL) conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Withstands peak system voltages in 48V automotive architectures without breakdown.
RDS(on) typ.2.6 mΩ @ VGS = 10 V, ID = 75 A - Enables <1.5 W conduction loss at 75 A, reducing heatsink size.
ID (package)160 A @ TC = 25°C - Matches PCB-mount thermal limits for D2PAK on 1"² FR-4 board.
Qg total190 nC - Requires ~1.9 µC gate charge per switch cycle at 10 V drive; impacts driver sizing.
trr36 ns @ TJ = 25°C, IF = 75 A - Minimizes diode recovery loss and EMI in synchronous buck topologies.
RθJC0.50 °C/W - Enables direct heatsink mounting with predictable junction-to-case thermal path.
EAS tested940 mJ - Confirmed single-pulse avalanche ruggedness beyond datasheet minimum (650 mJ).

Pinout & Package

Package: D2PAK (TO-263), surface-mount with exposed drain pad for thermal and electrical connection. Standard footprint per AN-994; requires solder mask defined pads and thermal vias for optimal heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main current path from source to loadExposed metal tab - electrically connected to drain; must be isolated from chassis unless referenced to system ground.
Source (S)Return path for load current; reference for gate driveLow-inductance source bond wires; critical for stable gate control in high-di/dt applications.
Gate (G)Control terminal for channel formationHigh-impedance input requiring <200 nA leakage; sensitive to ESD; needs series resistor to damp oscillation.

Key Features

FeatureDesign Value
Ultra-low RDS(on)2.6 mΩ typ. reduces conduction losses by >30% vs. legacy 55 V MOSFETs in same package.
175°C operating junctionEnables full-rated current in engine bay environments where ambient exceeds 105°C.
Repetitive avalanche ratedValidated for repeated unclamped inductive switching up to TJmax, eliminating snubber circuits in motor drives.
Fast body diode recovery36 ns trr and 47 nC Qrr minimize shoot-through risk and switching loss in synchronous rectifiers.
AEC-Q101 qualifiedPassed stress tests including HTGB, HTRB, and temperature cycling - certified for safety-critical automotive subsystems.

Applications

Onboard Charger (OBC) DC-DC Stage48V Mild-Hybrid Motor Inverter

Use Scenario: High-efficiency bidirectional DC-DC conversion between 400 V traction battery and 48 V auxiliary bus.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 2.6 mΩ RDS(on) cuts conduction loss by 40% vs. 4.5 mΩ alternatives, enabling >97% efficiency at 5 kW output.

Use Scenario: Low-side switching in three-phase inverter driving 48 V PMSM starter-generator.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element handling 150 A peak phase current with 50 ns rise/fall times.

Use Value: 175°C rating allows sustained 120 A operation at 110°C case temperature, avoiding derating in compact enclosures.

EV Battery Disconnect Unit (BDU)Automotive DC Fast Charging Interface

Use Scenario: Main contactor replacement in high-voltage battery isolation circuits requiring fail-safe turn-off.

IC Role / Device Role / Timing Role: Power switch with integrated avalanche ruggedness to absorb inductive kickback during emergency disconnection.

Use Value: 940 mJ tested EAS supports safe interruption of 200 A fault currents without external clamping diodes.

Use Scenario: Input stage protection and current regulation in 100–200 kW charging modules interfacing with grid-side AC/DC converters.

IC Role / Device Role / Timing Role: High-reliability power switch in active front-end (AFE) bridge legs managing regenerative braking energy flow.

Use Value: AEC-Q101 qualification ensures long-term reliability under thermal cycling and vibration stress typical of charging station deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 55 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N5LF8AGRDS(on) = 2.0 mΩ (lower), but Qg = 240 nC (higher); 150°C max TJLacks AEC-Q101 certification; not approved for safety-critical automotive usePreferable only in non-automotive industrial DC-DC where gate drive margin exists and thermal headroom is ample.
IRFS7537PBFRDS(on) = 3.2 mΩ (higher); 175°C rated; Qg = 150 nC (lower); TO-220 packageLower current rating (110 A package-limited); no D2PAK thermal interfaceSuitable for lower-power (<3 kW), space-constrained designs where PCB mounting is impractical and heatsinking is via clip.

Compared with STL220N5LF8AG and IRFS7537PBF, the AUIRF3805S uniquely balances ultra-low RDS(on), automotive qualification, and D2PAK thermal performance-making it the only choice for production 48V hybrid inverters requiring both efficiency and functional safety compliance.

Availability

AUIRF3805S is available at Aetrix Electronics and suitable for automotive powertrain control, EV onboard charger design, and 48V mild-hybrid motor drive systems requiring stable component supply across multi-year production cycles.

Supply support for AUIRF3805S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The AUIRF3805S belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine compartment and battery system applications.

FAQ

What is the maximum continuous drain current for AUIRF3805S at 100°C case temperature?

The AUIRF3805S supports 150 A continuous drain current at TC = 100°C when silicon-limited, per datasheet Figure 9. This reflects thermal derating from the 160 A package limit at 25°C, governed by RθJC = 0.50 °C/W and maximum TJ = 175°C. Actual usable current depends on heatsink resistance and airflow.

Does AUIRF3805S require a gate resistor for reliable operation?

Yes-a gate resistor (typically 5–22 Ω) is required to dampen ringing caused by gate loop inductance interacting with Qg = 190 nC and Ciss = 7960 pF. Without it, overshoot exceeding ±20 V VGS rating may occur during fast switching, risking oxide damage or spurious turn-on in paralleled configurations.

Can AUIRF3805S be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its positive RDS(on) temperature coefficient (Figure 10) enables current sharing above 100°C junction temperature. Gate drive must be low-inductance and individually resistively damped; source inductance mismatch must be minimized to avoid dynamic imbalance.

Is the body diode of AUIRF3805S suitable for synchronous rectification?

Yes-the body diode has 36 ns trr and 47 nC Qrr at 75 A, enabling efficient synchronous rectification in buck converters up to 200 kHz. However, its 1.3 V VSD forward drop increases conduction loss versus Schottky diodes; optimal use requires precise timing control to minimize overlap conduction.

AUIRF3805S Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
290 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7960 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

AUIRF3805S FAQ

1.How can I place an order for AUIRF3805S through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3805S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3805S reliable?

The price and inventory of AUIRF3805S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3805S is usually 5 days.

3.What payment methods are accepted for AUIRF3805S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3805S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3805S?

AUIRF3805S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3805S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3805S?

For technical support, including AUIRF3805S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3805S requirements.

6.How does Aetrix verify that AUIRF3805S is sourced from the original manufacturer or authorized distributors?

All AUIRF3805S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3805S meets industry standards.

7.What is the process for return or replacement of AUIRF3805S?

All AUIRF3805S units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3805S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3805S part is unused and in its original packaging.

Return procedure for AUIRF3805S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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