Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF3805S-7P

Name: AUIRF3805S-7P
Brand: Infineon Technologies
SKU: AUIRF3805S-7P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AUIRF3805S-7P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: AUIRF3805S-7P.pdf

Description:: MOSFET N-CH 55V 160A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,387

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AUIRF3805S-7P from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2PAK-7 (TO-263-7) package, rated for 55 V V_DSS, 2.0 mΩ typ. R_DS(on) at 10 V V_GS, and 240 A continuous drain current at T_C = 25°C. It serves as a high-current, low-loss main switch in 12 V/24 V automotive powertrain and body control modules.

For engineers reviewing the AUIRF3805S-7P datasheet, AUIRF3805S-7P pinout, AUIRF3805S-7P application, or AUIRF3805S-7P equivalent, key selection criteria include its 175°C junction rating, 680 mJ tested single-pulse avalanche energy, fast switching (t_r = 130 ns), and thermal resistance of 0.50°C/W junction-to-case - critical for high-reliability under-hood power conversion.

Technical Context

This device employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche capability up to T_jmax. Its gate charge profile (Q_g = 130–200 nC, Q_gd = 49 nC) supports efficient hard-switching in synchronous rectifiers and motor phase legs.

The integrated body diode delivers 140 A forward current with V_SD ≤ 1.3 V at 25°C and exhibits controlled reverse recovery (t_rr = 45–68 ns, Q_rr = 35–53 nC), enabling reliable operation in freewheeling and regenerative braking paths without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Withstands peak transients in 24 V automotive systems including load dump (ISO 7637-2 Pulse 5a).
R_DS(on) typ.	2.0 mΩ @ V_GS = 10 V, I_D = 140 A - Enables <1.0 W conduction loss at 200 A, reducing heatsink requirements.
I_D cont. @ T_C = 25°C	240 A - Supports high-power DC-DC converters and starter solenoid drivers without parallel devices.
E_AS tested	680 mJ - Validated unclamped inductive switching margin for motor drive short-circuit protection.
t_r/t_f	130 ns / 52 ns - Allows >100 kHz PWM operation with minimal switching loss in Class-D audio amplifiers.
R_θJC	0.50°C/W - Enables direct thermal coupling to cold plates in battery disconnect units and DC fast-charging modules.
Q_gd	49 nC - Low Miller charge improves gate drive efficiency and reduces risk of spurious turn-on in high-dV/dt environments.

Pinout & Package

Package: D2PAK-7 (TO-263-7), surface-mount, thermally enhanced with exposed drain pad. Pin 1–7 arranged linearly; pins 1–3 and 5–7 are source terminals; pin 4 is gate; drain connected to backside metal tab.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source (S)	Multiple paralleled source connections reduce source inductance (L_S = 7.5 nH) and improve current sharing in high-di/dt switching.
4	Gate (G)	Single low-impedance gate input optimized for standard 12 V automotive gate drivers (e.g., IR21xx, UCC27531).
Drain Tab	Drain (D)	Exposed copper drain pad provides primary thermal path and high-current return; requires solder mask defined stencil for optimal thermal transfer.

Key Features

Feature	Design Value
175°C operating junction temperature	Enables placement near hot components (e.g., inverters, DC-DC inductors) without derating in engine bay applications.
Repetitive avalanche rated	Supports fault-tolerant operation during short-circuit events in motor controllers without immediate failure.
Ultra-low R_DS(on)	Reduces conduction losses by >30% vs. legacy 55 V MOSFETs, improving system efficiency in 48 V mild-hybrid architectures.
Lead-free, RoHS-compliant	Meets automotive ELV Directive and JESD204B assembly requirements for lead-free reflow profiles (T_peak = 260°C).
Fast body diode recovery	Minimizes reverse recovery losses and EMI in synchronous buck topologies used in ADAS domain controllers.

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converter

Use Scenario: High-current H-bridge driving 3-phase EPS motor with peak loads up to 200 A during parking maneuvers.

IC Role / Device Role / Timing Role: Main low-side switching element in three-phase inverter leg; handles bidirectional current with body diode freewheeling.

Use Value: 2.0 mΩ R_DS(on) limits conduction loss to <0.8 W at 200 A, enabling compact heatsink design within tight EPS module envelope.

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicles, operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge; conducts high average current with low forward voltage drop.

Use Value: V_SD ≤ 1.3 V and t_rr = 45 ns minimize reverse recovery loss, increasing conversion efficiency by 1.2% at 10 kW output.

Start-Stop Battery Management

On-Board Charger (OBC) Input Stage

Use Scenario: High-side battery disconnect switch managing cranking surge currents (>1000 A pulsed) during engine restart.

IC Role / Device Role / Timing Role: Single-pole, high-current isolation switch with avalanche energy handling during load dump transients.

Use Value: 680 mJ tested E_AS ensures survival of ISO 16750-2 load dump pulses without clamping diodes or TVS.

Use Scenario: AC-DC PFC boost switch in 11 kW OBC, switching at 65 kHz with 240 A peak inductor current.

IC Role / Device Role / Timing Role: Primary high-current boost switch; operates in continuous conduction mode with hard commutation.

Use Value: Q_gd/Q_g ratio of 0.38 suppresses Miller-induced shoot-through, enabling stable operation with 12 V gate drive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55 V, 1.8 mΩ R_DS(on), 220 A I_D, DFN8 5x6 mm package	Lower thermal resistance (R_θJA = 2.5°C/W PCB-mounted) but no avalanche rating specified	Preferred for space-constrained PCB layouts where board-level thermal management dominates over case mounting.
IPB027N05N5	55 V, 2.7 mΩ R_DS(on), 200 A I_D, TO-263-7, 500 mJ E_AS	Higher R_DS(on) and lower avalanche energy than AUIRF3805S-7P	Selected when cost sensitivity outweighs marginal efficiency gain and transient robustness requirements.

Compared with STL220N5LF8AG and IPB027N05N5, the AUIRF3805S-7P uniquely balances ultra-low on-resistance, industry-leading 680 mJ avalanche margin, and proven D2PAK-7 thermal performance - making it optimal for under-hood applications demanding both efficiency and fault resilience.

Availability

AUIRF3805S-7P is available at Aetrix Electronics and suitable for electric power steering, 48 V DC-DC conversion, and start-stop battery management systems requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF3805S-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and qualification infrastructure.

The AUIRF3805S-7P belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine compartment and chassis control systems.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRF3805S-7P?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable automotive use, gate drive should be clamped to +12 V to +15 V during turn-on and –5 V to –10 V during turn-off to ensure fast, noise-immune switching while staying within safe margins.

Can AUIRF3805S-7P be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Fig. 10) enables inherent current sharing. Successful parallel operation requires matched gate drive layout, symmetrical source inductance (<1 nH difference), and individual gate resistors (2.2–4.7 Ω) to damp oscillation. Derate total current by 15% for thermal margin.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the body diode is rated for 240 A continuous source current (I_S) and 1000 A pulsed (I_SM). Its 1.3 V forward voltage at 140 A and 45 ns reverse recovery time make it viable for synchronous rectification in 100–200 kHz DC-DC converters, though external Schottky diodes may further reduce losses in high-efficiency designs.

What PCB layout practices maximize thermal performance?

Use ≥2 oz copper on the drain pad layer with ≥8 thermal vias (0.3 mm diameter, spaced ≤1.2 mm apart) connecting to internal ground/power planes. Maintain ≥1.5 mm clearance between gate traces and high-dV/dt nodes. Apply solder mask defined stencil (0.15 mm thickness) for full drain pad coverage to achieve <0.50°C/W R_θJC in production assembly.

AUIRF3805S-7P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

AUIRF3805S-7P FAQ

1.How can I place an order for AUIRF3805S-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3805S-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3805S-7P reliable?

The price and inventory of AUIRF3805S-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3805S-7P is usually 5 days.

3.What payment methods are accepted for AUIRF3805S-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3805S-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3805S-7P?

AUIRF3805S-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3805S-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3805S-7P?

For technical support, including AUIRF3805S-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3805S-7P requirements.

6.How does Aetrix verify that AUIRF3805S-7P is sourced from the original manufacturer or authorized distributors?

All AUIRF3805S-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3805S-7P meets industry standards.

7.What is the process for return or replacement of AUIRF3805S-7P?

All AUIRF3805S-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3805S-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3805S-7P part is unused and in its original packaging.

Return procedure for AUIRF3805S-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…