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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF3808S

Name: AUIRF3808S
Brand: Infineon Technologies
SKU: AUIRF3808S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF3808S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF3808S.pdf

Description:: MOSFET N-CH 75V 106A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF3808S from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 75V V_DS, 5.9 mΩ R_DS(on) at V_GS = 10 V, and 106 A continuous drain current at T_C = 25°C. It operates up to 175°C junction temperature, features full avalanche rating, and is optimized for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the AUIRF3808S datasheet, AUIRF3808S pinout, AUIRF3808S application, or AUIRF3808S equivalent, key selection criteria include its low on-resistance, fast switching (t_r = 140 ns, t_f = 120 ns), repetitive avalanche capability (E_AR up to 510 mJ), and automotive qualification per AEC-Q101 standards.

Technical Context

This device uses Infineon's Stripe Planar HEXFET technology to achieve high current density and thermal robustness. Its gate charge profile (Q_g = 150–220 nC) and low C_iss (5310 pF) support efficient high-frequency switching in synchronous buck stages and H-bridge motor drivers.

The integrated body diode exhibits t_rr = 93–140 ns and Q_rr = 340–510 nC at di/dt = 100 A/µs, enabling reliable freewheeling in inductive loads. Thermal design is anchored by R_θJC = 0.75°C/W and R_θJA = 40°C/W (1"² FR-4 PCB), with linear derating of 1.3 W/°C above 25°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications
R_DS(on) typ.	5.9 mΩ @ V_GS = 10 V, I_D = 82 A - Enables <1.5 W conduction loss at 82 A, critical for thermal margin in compact modules
I_D cont. @ T_C = 25°C	106 A - Supports high-current starter solenoid or EPS motor phase switches without parallel devices
E_AS	430 mJ - Single-pulse unclamped inductive energy handling without failure, verified at L = 0.130 mH, I_AS = 82 A
t_r/t_f	140 ns / 120 ns - Fast edge rates reduce switching losses in 100–500 kHz power stages
T_J max	+175°C - Sustains operation under hood temperatures in engine control units and transmission controllers
Q_g	150–220 nC - Determines gate driver strength requirement; compatible with standard 2 A peak drivers

Pinout & Package

Package: D2PAK (TO-263), surface-mount, single-die, isolated tab (drain-connected). Thermal pad requires soldered copper area for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; threshold V_GS(th) = 2.0–4.0 V
Pin 2 (D)	Drain	Main high-side or low-side power path; electrically connected to exposed metal tab
Pin 3 (S)	Source	Power return and reference node for gate drive; internal source inductance L_S = 7.5 nH affects ringing

Key Features

Feature	Design Value
Advanced Planar Technology	Enables 5.9 mΩ R_DS(on) in D2PAK footprint-reduces die area vs. trench MOSFETs while maintaining ruggedness
Fully Avalanche Rated	Guaranteed single-pulse E_AS = 430 mJ and repetitive avalanche up to T_Jmax, eliminating need for external snubbers in inductive load switching
Dynamic dV/dt Rating	5.5 V/ns - Ensures immunity to false turn-on during high dv/dt transients in half-bridge configurations
Automotive Qualified	AEC-Q101 qualified with 175°C operation-meets reliability requirements for engine control, transmission, and ADAS power stages

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Electric Power Steering (EPS) Phase Switch

Use Scenario: High-speed switching of 12 V fuel injectors with inductive kickback up to 100 V.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive unclamped inductive energy.

Use Value: 430 mJ E_AS and 5.9 mΩ R_DS(on) eliminate external flyback diodes and reduce thermal stress during 10 Hz–200 Hz injection cycles.

Use Scenario: Bidirectional current control in 3-phase EPS motor bridge with peak currents >80 A.

IC Role / Device Role / Timing Role: N-channel high-current phase leg switch; operates in PWM mode at 20–40 kHz.

Use Value: 106 A I_D rating and 140 ns rise time enable precise torque response while minimizing conduction + switching losses.

48 V Mild Hybrid DC-DC Converter

Automotive HVAC Blower Motor Controller

Use Scenario: Synchronous rectification in 48 V–12 V bidirectional buck-boost converter.

IC Role / Device Role / Timing Role: Secondary-side power switch; conducts high average current with low duty-cycle losses.

Use Value: 7.0 mΩ max R_DS(on) at 175°C ensures <2.5 W conduction loss at 82 A, supporting >95% efficiency at full load.

Use Scenario: PWM-controlled blower motor drive in cabin climate system with variable speed demand.

IC Role / Device Role / Timing Role: Low-side MOSFET in half-bridge topology; commutates inductive motor current with body diode recovery.

Use Value: 93–140 ns t_rr and 340–510 nC Q_rr minimize reverse recovery losses and EMI during 1–20 kHz PWM operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	75 V V_DS, 3.8 mΩ R_DS(on), DFN8 5×6 mm package, no leaded thermal tab	Requires enhanced PCB thermal design; not drop-in for D2PAK footprint	Preferred for space-constrained modules where board-level thermal vias can replace heatsink mounting
IXTH106N075L2	75 V V_DS, 6.2 mΩ R_DS(on), TO-247 package, higher R_θJC = 0.9°C/W	Larger through-hole footprint; lower power density than D2PAK	Selected when mechanical robustness and serviceability outweigh surface-mount density requirements

Compared with STL220N4F7AG and IXTH106N075L2, the AUIRF3808S delivers optimal balance of low R_DS(on), proven automotive reliability, and D2PAK thermal performance-making it ideal for production-critical engine and chassis control modules where footprint, thermal interface, and qualification traceability are jointly constrained.

Availability

AUIRF3808S is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRF3808S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The AUIRF3808S belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine management, transmission, and ADAS subsystems under extreme thermal and electrical stress.

FAQ

Is AUIRF3808S RoHS compliant and lead-free?

Yes. The AUIRF3808S is fully RoHS compliant and lead-free, meeting EU Directive 2011/65/EU and JEDEC J-STD-609A Class 3 marking requirements. All plating and packaging materials-including solderable terminations and mold compound-are lead-free and halogen-free.

What is the maximum allowable gate-to-source voltage for AUIRF3808S?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between –5 V (to prevent spurious turn-on) and +12 V to +15 V (to ensure full enhancement with margin).

Can AUIRF3808S be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Its positive R_DS(on) temperature coefficient (0.086 V/°C) supports current sharing. However, gate resistance balancing, symmetrical PCB routing, and individual gate resistors are required to avoid dynamic current imbalance and thermal runaway.

Does AUIRF3808S require a heatsink in typical automotive applications?

A heatsink is recommended for continuous I_D > 50 A at ambient > 85°C. With R_θJC = 0.75°C/W and P_D = 200 W max, even modest conduction losses (e.g., 3.5 W at 75 A) raise T_J significantly without thermal interface to a heatsink or large copper pour.

AUIRF3808S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 82A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5310 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRF3808S FAQ

1.How can I place an order for AUIRF3808S through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF3808S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF3808S reliable?

The price and inventory of AUIRF3808S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF3808S is usually 5 days.

3.What payment methods are accepted for AUIRF3808S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF3808S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF3808S?

AUIRF3808S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF3808S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF3808S?

For technical support, including AUIRF3808S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF3808S requirements.

6.How does Aetrix verify that AUIRF3808S is sourced from the original manufacturer or authorized distributors?

All AUIRF3808S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF3808S meets industry standards.

7.What is the process for return or replacement of AUIRF3808S?

All AUIRF3808S units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF3808S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF3808S part is unused and in its original packaging.

Return procedure for AUIRF3808S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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