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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF4104

Name: AUIRF4104
Brand: Infineon Technologies
SKU: AUIRF4104
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF4104

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AUIRF4104.pdf

Description:: MOSFET N-CH 40V 75A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:9,602

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Product details

Overview

AUIRF4104 from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel HEXFET® Power MOSFET in TO-220AB package, rated for 40V V(BR)DSS, 4.3mΩ typ. RDS(on) at VGS = 10V, and 75A continuous drain current at TC = 25°C. It delivers fast switching (tr = 130ns, tf = 77ns), full avalanche ruggedness (EAS = 470mJ), and operates up to 175°C junction temperature - deployed in engine control units, DC-DC converters, and high-side load switches.

For engineers reviewing the AUIRF4104 datasheet, AUIRF4104 pinout, AUIRF4104 application, or AUIRF4104 equivalent, key selection criteria include its 40V breakdown voltage, low on-resistance under automotive thermal constraints, repetitive avalanche capability, and AEC-Q101 qualification - critical for 12V/24V vehicle power distribution systems requiring robust short-circuit tolerance and thermal stability.

Technical Context

This MOSFET uses advanced silicon processing to minimize RDS(on) per die area while maintaining high dV/dt immunity and dynamic ruggedness. Its gate charge profile (Qg = 68nC typ., Qgd = 27nC) supports efficient PWM operation in high-frequency switching topologies, and the integral body diode exhibits low VSD (1.3V max.) and fast trr (23–35ns) for synchronous rectification and freewheeling.

The device's thermal design centers on low RθJC (1.05°C/W) and validated transient impedance curves enabling safe unclamped inductive switching up to IAS = 75A. Repetitive avalanche energy (EAR = 220mJ) is specified across temperature and pulse width per Figure 16, with derating governed by ZthJC(D,tav) and ΔTj limits - not abstract reliability metrics but measurable thermal boundary conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	40V - Maximum blocking voltage before avalanche onset; defines usable range in 12V/24V automotive bus applications.
RDS(on) typ.	4.3mΩ @ VGS = 10V, TJ = 25°C - Enables <1W conduction loss at 75A, critical for thermally constrained ECU modules.
ID cont. @ TC=25°C	75A - Package-limited continuous current; determined by leadframe thermal capacity, not silicon limit.
EAS	470mJ - Single-pulse avalanche energy rating; validates safe operation during load dump or inductive kick events.
Qg / Qgd	68nC / 27nC - Gate drive energy requirements; Miller charge fraction (39.7%) informs gate driver sizing for clean turn-off.
TJ max.	175°C - Maximum junction temperature; enables operation in under-hood environments without forced cooling.
tr / tf	130ns / 77ns - Switching transition times at ID = 75A, VDD = 20V, RG = 6.8Ω; sets minimum practical PWM frequency.

Pinout & Package

TO-220AB package with isolated tab (drain-connected). Standard three-terminal configuration: Drain (Tab & Pin 2), Source (Pin 1), Gate (Pin 3). Mounting torque: 10 lbf·in (1.1 N·m).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Common return path for load current; electrically tied to PCB ground plane in high-current layouts.
Pin 2 (Drain)	Drain terminal (high-side switch node)	Connected to internal die backside and metal tab; requires insulated mounting hardware when heatsink is grounded.
Pin 3 (Gate)	Control input	High-impedance MOS gate; sensitive to ESD (HBM Class H1C); requires gate resistor (RG ≥ 6.8Ω) to damp ringing.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated per AEC-Q101-001/002/005 - ensures reliability for automotive powertrain and chassis systems.
Repetitive avalanche rated	EAR = 220mJ at TJ = 25°C - enables repeated inductive switching without degradation, unlike non-rated MOSFETs.
175°C operating junction	Rated continuous operation up to 175°C - eliminates need for external thermal derating in hot under-hood locations.
Low RDS(on) × Qg figure of merit	~290 mΩ·nC - balances conduction and switching losses for high-efficiency 100–500kHz DC-DC stages.
Dynamic dV/dt rated	Immune to false turn-on during fast voltage transients - critical in noisy alternator-fed 12V systems.

Applications

Engine Control Unit (ECU) High-Side Driver

Automotive DC-DC Converter Primary Switch

Use Scenario: Driving solenoid valves and fuel injectors in gasoline/diesel ECUs using high-side configuration.

IC Role / Device Role / Timing Role: High-side power switch controlling 12V loads; handles pulsed currents up to 75A with microsecond timing precision.

Use Value: Avalanche ruggedness absorbs inductive kickback without snubbers; 175°C rating sustains operation near hot engine blocks.

Use Scenario: Primary-side switching element in 12V-to-5V/3.3V buck converters powering ADAS sensors and infotainment.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 250kHz; leverages low Qgd for minimal shoot-through risk.

Use Value: 4.3mΩ RDS(on) reduces conduction loss below 0.5W at 50A, improving converter efficiency >92% at full load.

Body Control Module (BCM) Load Protection

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Replacing electromechanical relays in BCMs for headlight, wiper, and HVAC load control.

IC Role / Device Role / Timing Role: Solid-state relay replacement with diagnostic feedback via current sensing.

Use Value: Fast turn-on (td(on) = 16ns) enables precise PWM dimming; RoHS-compliant lead-free finish meets automotive compliance mandates.

Use Scenario: Half-bridge phase leg in 3-phase EPS motor drivers handling peak currents >100A.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; coordinated with complementary high-side FET.

Use Value: Body diode trr = 23ns minimizes reverse recovery loss during commutation; 7.5nH LS reduces voltage overshoot during di/dt = 100A/μs events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40V, 220A ID (package-limited), RDS(on) = 1.8mΩ typ., DFN5x6 package	Higher current density but surface-mount only; no through-hole option	Select for space-constrained PCBs where thermal vias and copper pour replace heatsink mounting.
IRF4905PbF	55V, 74A ID, RDS(on) = 20mΩ typ., TO-220AB, P-channel	Complementary polarity; higher on-resistance; used in low-side or level-shifted configurations	Choose only when circuit architecture requires P-channel high-side drive or dual-N/P implementation.

Compared with STL220N4F7AG and IRF4905PbF, AUIRF4104 offers optimal balance of through-hole serviceability, 4.3mΩ conduction loss, and validated 175°C/avalanche performance - making it preferred for legacy-compatible, thermally demanding automotive modules where mechanical robustness and field-replaceability matter.

Availability

AUIRF4104 is available at Aetrix Electronics and suitable for engine control units, body control modules, and electric power steering systems requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRF4104 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap devices.

AUIRF4104 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12V/24V vehicle subsystems where thermal resilience, avalanche safety, and AEC-Q101 compliance are mandatory.

FAQ

Is AUIRF4104 pin-compatible with standard TO-220AB N-channel MOSFETs?

Yes - AUIRF4104 uses industry-standard TO-220AB mechanical footprint and pinout (G-S-D), enabling drop-in replacement for other TO-220AB N-channel MOSFETs with matching voltage/current ratings. However, gate drive requirements differ due to its 68nC total gate charge, so verify driver strength and layout parasitics before substitution.

What is the maximum allowable case temperature for continuous 75A operation?

The 75A continuous drain rating is specified at TC = 25°C. As case temperature rises, current must be linearly derated using the 0.95 W/°C factor. At TC = 100°C, maximum continuous ID drops to approximately 48A - confirmed by Figure 9 in the datasheet and validated under board-mounted still-air conditions.

Does AUIRF4104 require a heatsink in automotive applications?

Yes - even at 75A, power dissipation exceeds 2.4W (ID² × RDS(on)), necessitating a heatsink to maintain TJ ≤ 175°C. Thermal resistance from junction-to-case is 1.05°C/W; with typical case-to-sink resistance of 0.5°C/W, ambient-to-sink must remain ≤ 60°C to avoid exceeding Tjmax under worst-case load.

How is repetitive avalanche performance verified for AUIRF4104?

Repetitive avalanche energy (EAR = 220mJ) is measured per AEC-Q101 test condition: IAS = 75A, L = 0.04mH, RG = 25Ω, VGS = 10V, pulse width ≤ 1ms, duty cycle ≤ 2%. Data is plotted in Figure 16, showing allowable energy vs. starting junction temperature - not extrapolated, but empirically validated across production lots.

AUIRF4104 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

AUIRF4104 FAQ

1.How can I place an order for AUIRF4104 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF4104 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF4104 reliable?

The price and inventory of AUIRF4104 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF4104 is usually 5 days.

3.What payment methods are accepted for AUIRF4104?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF4104 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF4104?

AUIRF4104 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF4104 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF4104?

For technical support, including AUIRF4104 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF4104 requirements.

6.How does Aetrix verify that AUIRF4104 is sourced from the original manufacturer or authorized distributors?

All AUIRF4104 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF4104 meets industry standards.

7.What is the process for return or replacement of AUIRF4104?

All AUIRF4104 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF4104, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF4104 part is unused and in its original packaging.

Return procedure for AUIRF4104:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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