Infineon Technologies AUIRF4905

Overview

AUIRF4905 from Infineon is a P-channel automotive-grade HEXFET® Power MOSFET with -55 V V_BR(DSS), 0.02 Ω R_DS(on) at -10 V V_GS, and -74 A continuous drain current at T_C = 25°C, designed for high-reliability DC-DC converters, motor control inverters, and load-switching circuits in engine control units and body electronics.

For engineers reviewing the AUIRF4905 datasheet, AUIRF4905 pinout, AUIRF4905 application, or AUIRF4905 equivalent, this page delivers verified electrical parameters, thermal derating behavior, avalanche energy ratings, gate charge profile, and automotive qualification context required for robust power stage design and BOM validation.

Technical Context

This P-channel MOSFET operates in enhancement mode with a gate threshold voltage range of -2.0 V to -4.0 V and exhibits fast switching via low total gate charge (180 nC) and controlled dv/dt (-5.0 V/ns peak diode recovery). Its planar silicon structure supports repetitive avalanche up to T_jmax = 175°C and delivers stable on-resistance across temperature (±0.05 V/°C breakdown coefficient).

The device integrates a rugged body diode with 89–130 ns reverse recovery time and 230–350 nC Q_rr, enabling reliable freewheeling in inductive loads. Thermal resistance is specified as R_θJC = 0.75 °C/W, supporting 200 W power dissipation under board-mounted still-air conditions at T_A = 25°C.

Key Specifications

Pinout & Package

Package: TO-220AB (3-lead, through-hole, isolated tab). Tab is electrically connected to Drain. Standard mounting torque: 10 lbf·in (1.1 N·m).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive power MOSFET applications.

Compared with STP55PF06 and IRF4905SPbF, AUIRF4905 uniquely combines AEC-Q101 qualification, 175°C operation, and 930 mJ avalanche energy-making it the only viable choice for production automotive power stages requiring functional safety alignment and thermal resilience.

Availability

AUIRF4905 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended vehicle lifecycles and regional regulatory compliance.

Supply support for AUIRF4905 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and qualification infrastructure aligned to ISO/TS 16949.

AUIRF4905 belongs to the automotive-grade HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine bay and chassis control applications where robustness and long-term parametric stability are mandatory.

FAQ

Is AUIRF4905 suitable for synchronous rectification in a 48 V automotive buck converter?

Yes. With its 0.02 Ω R_DS(on), 180 nC Q_g, and 175°C T_jmax, AUIRF4905 supports efficient synchronous rectification at 48 V input when paired with appropriate gate drive timing and thermal management. Its body diode trr (89–130 ns) and Q_rr (230–350 nC) are optimized for fast freewheeling in high-frequency topologies.

What is the maximum allowable case temperature for continuous operation at full rated current?

The maximum continuous case temperature is 100°C, derived from the derated current curve (Fig. 9): at T_C = 100°C, I_D drops to -52 A. Operation above 100°C requires pulse-width limitation or reduced current to maintain T_j ≤ 175°C, per the SOA diagram (Fig. 8) and thermal impedance data (Fig. 11).

Does AUIRF4905 require a negative gate drive voltage relative to source?

Yes. As a P-channel enhancement-mode MOSFET, it turns on when V_GS is negative. The gate threshold range is -2.0 V to -4.0 V, and full enhancement occurs at V_GS = -10 V. Gate drive must sink current to pull the gate below the source potential-typically implemented with a dedicated high-side P-channel driver or level-shifted bootstrap circuit.

How does the avalanche rating impact PCB layout decisions?

The 930 mJ single-pulse E_AS rating allows limited inductive energy absorption without external clamping, but layout must minimize stray inductance (<10 nH) in the drain loop to prevent voltage overshoot exceeding -55 V. Use short, wide traces, local decoupling, and avoid routing near sensitive analog sections to preserve dv/dt immunity.