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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF5210S

Name: AUIRF5210S
Brand: Infineon Technologies
SKU: AUIRF5210S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF5210S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRF5210S.pdf

Description:: MOSFET P-CH 100V 38A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF5210S from Infineon is a P-channel automotive-grade HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for -100V V_BRDSS, 60 mΩ R_DS(on) max at -10V V_GS, and -38A continuous drain current at T_C = 25°C. It delivers rugged unclamped inductive switching with 120 mJ single-pulse avalanche energy and supports fast switching in high-side load switch and motor control circuits within 12V/24V automotive power systems.

For engineers reviewing the AUIRF5210S datasheet, AUIRF5210S pinout, AUIRF5210S application, or AUIRF5210S equivalent, key selection criteria include its -100V breakdown rating, -38A thermal-limited continuous current, fully avalanche-rated operation up to T_J = 150°C, and D2Pak thermal resistance of 0.75°C/W junction-to-case - critical for under-hood power management designs requiring robust transient handling and RoHS-compliant packaging.

Technical Context

This P-channel MOSFET employs Infineon's cellular HEXFET® process to achieve ultra-low on-resistance per die area while maintaining high dv/dt immunity (-7.4 V/ns) and full repetitive avalanche capability. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard automotive logic-level drive, and its dynamic parameters - including 150 nC typical total gate charge and 81 nC gate-to-drain charge - support efficient high-frequency PWM control in DC-DC converters and H-bridge drivers.

The device integrates a co-packaged body diode with -1.6 V forward voltage at -23 A and 170 ns typical reverse recovery time, enabling synchronous rectification and freewheeling in bidirectional power stages. Thermal design is anchored by a low R_θJC of 0.75°C/W and a maximum junction temperature of +150°C, validated per AEC-Q101 standards for engine control units, battery disconnect switches, and transmission control modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	-100 V - Withstands reverse-biased drain-source transients up to 100 V without breakdown in automotive 24V systems.
R_DS(on) max	60 mΩ @ V_GS = -10 V, I_D = -38 A - Enables <1.5 W conduction loss at full rated current, reducing heatsink requirements.
I_D continuous	-38 A @ T_C = 25°C - Supports high-current loads such as fuel pump drivers and HVAC blower motors without derating.
E_AS	120 mJ - Absorbs unclamped inductive energy during fault events (e.g., solenoid de-energization), eliminating need for external snubbers.
dv/dt rating	-7.4 V/ns - Resists false turn-on from high-slew-rate noise in electric power steering and ABS module PCB layouts.
T_J range	-55°C to +150°C - Qualified for under-hood operation across all global automotive ambient conditions per AEC-Q101.
Q_g typ.	150 nC - Determines gate driver power requirement; compatible with standard automotive gate drivers (e.g., UCC27531, TC4427).

Pinout & Package

Supplied in D2Pak (TO-263AB) surface-mount package with exposed drain pad for enhanced thermal performance. The package features three terminals: Gate (G), Drain (D), and Source (S), arranged in standard G-D-S order when viewed from top marking side.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires -10 V for full enhancement; threshold range -2.0 V to -4.0 V enables compatibility with 3.3 V/5 V microcontroller outputs via level-shifting.
D	Drain	High-side connection point; electrically tied to exposed copper pad for direct PCB thermal coupling and low-inductance high-current return path.
S	Source	Reference node for gate drive and load return; connects to system ground or battery negative in high-side switch configurations.

Key Features

Feature	Design Value
P-channel architecture	Enables high-side switching without bootstrap circuitry - simplifies layout and improves reliability in 12V/24V battery-fed systems.
Fully avalanche rated	Withstands repetitive unclamped inductive switching up to T_Jmax, eliminating need for external clamping diodes in motor drive flyback paths.
Dynamic dv/dt immunity	-7.4 V/ns rating prevents spurious turn-on during fast voltage transients common in alternator ripple and load-dump events.
AEC-Q101 qualified	Validated for automotive use including temperature cycling, humidity bias, and mechanical shock - suitable for safety-critical ECU power stages.
Lead-free & RoHS compliant	Meets EU Directive 2011/65/EU and automotive ELV requirements; compatible with lead-free reflow profiles (peak 260°C, 10 s).

Applications

Engine Control Unit (ECU) Power Switch

Automotive Battery Disconnect Switch

Use Scenario: High-side switching of fuel injectors, ignition coils, and idle air control valves in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as controlled power rail switch; operates in linear and saturated modes during pulse-width modulated actuation.

Use Value: 60 mΩ R_DS(on) minimizes voltage drop and self-heating during 10–20 ms injector pulses; -100 V rating accommodates 120 V load-dump transients.

Use Scenario: Isolating 12V/24V battery from vehicle electronics during sleep mode or fault conditions.

IC Role / Device Role / Timing Role: High-side load switch controlling main battery feed to infotainment, telematics, and ADAS subsystems.

Use Value: -38 A continuous rating supports >400 W standby load; avalanche rating handles inrush current from large capacitive banks without failure.

Electric Power Steering (EPS) Motor Driver

Transmission Control Module (TCM) Solenoid Driver

Use Scenario: Half-bridge high-side switch in 3-phase EPS motor gate driver stage.

IC Role / Device Role / Timing Role: Fast-switching P-channel element in complementary output stage; commutates at 10–20 kHz PWM frequency.

Use Value: 150 nC Q_g and 63 ns rise time enable efficient switching at 20 kHz; -55°C to +150°C range ensures operation during cold cranking and hot soak.

Use Scenario: Driving linear or on/off solenoids for gear shift actuators and torque converter clutches.

IC Role / Device Role / Timing Role: Unclamped inductive load switch; absorbs stored magnetic energy during de-energization via internal avalanche mechanism.

Use Value: 120 mJ E_AS safely dissipates energy from 10–50 mH solenoid windings; eliminates need for discrete TVS or Zener clamp networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100P3LLH6	-100 V V_BRDSS, 55 mΩ R_DS(on), but only AEC-Q100 qualified (not Q101); lower Q_g (110 nC) reduces gate drive demand.	Lacks full AEC-Q101 validation; not recommended for safety-critical power stages where qualification traceability is mandated.	Select when cost sensitivity outweighs formal AEC-Q101 compliance; verify qualification scope with STMicroelectronics documentation.
IRF9540NPBF	-100 V V_BRDSS, 200 mΩ R_DS(on), non-automotive grade, TO-220 package, no avalanche rating.	Higher conduction loss (>5×), no thermal or reliability validation for automotive environments; unsuitable for under-hood deployment.	Acceptable only for prototyping or non-automotive industrial use; avoid in production automotive BOMs.

Compared with STP100P3LLH6 and IRF9540NPBF, the AUIRF5210S uniquely combines AEC-Q101 qualification, 60 mΩ on-resistance, and 120 mJ avalanche energy - making it the only option among the three qualified for production automotive high-side switching where both reliability and efficiency are mandatory.

Availability

AUIRF5210S is available at Aetrix Electronics and suitable for engine control units, battery disconnect switches, and electric power steering systems requiring stable component supply across extended vehicle lifecycles and global manufacturing sites.

Supply support for AUIRF5210S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

The AUIRF5210S belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in 12V/24V vehicle electrical architectures - emphasizing ruggedness, thermal stability, and transient immunity.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRF5210S?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable enhancement, apply -10 V to achieve full R_DS(on) specification; gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions.

Can AUIRF5210S be used in parallel configurations?

Yes, but with strict layout and thermal symmetry requirements. Matching R_DS(on) tolerance (±20%) and identical PCB trace inductance are essential. Use Kelvin-source connections and individual gate resistors to ensure balanced current sharing; thermal coupling via shared heatsink is mandatory to prevent thermal runaway.

Does AUIRF5210S require a gate resistor, and what value is recommended?

Yes - a gate resistor controls dV/dt and ringing. For 20 kHz PWM in motor drives, a 10 Ω series resistor is typical. Lower values (2–5 Ω) increase switching speed but risk EMI and shoot-through; higher values (22–47 Ω) reduce EMI but increase switching losses. Always validate with oscilloscope measurements of V_GS and V_DS waveforms.

Is the body diode in AUIRF5210S suitable for synchronous rectification?

No - the body diode has -1.6 V forward voltage and 170 ns reverse recovery time, resulting in high conduction and switching losses. It is intended for freewheeling and fault protection only. For synchronous rectification, use an external Schottky or MOSFET-based active rectifier with lower V_F and faster recovery.

AUIRF5210S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2780 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRF5210S FAQ

1.How can I place an order for AUIRF5210S through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF5210S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF5210S reliable?

The price and inventory of AUIRF5210S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF5210S is usually 5 days.

3.What payment methods are accepted for AUIRF5210S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF5210S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF5210S?

AUIRF5210S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF5210S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF5210S?

For technical support, including AUIRF5210S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF5210S requirements.

6.How does Aetrix verify that AUIRF5210S is sourced from the original manufacturer or authorized distributors?

All AUIRF5210S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF5210S meets industry standards.

7.What is the process for return or replacement of AUIRF5210S?

All AUIRF5210S units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF5210S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF5210S part is unused and in its original packaging.

Return procedure for AUIRF5210S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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