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Infineon Technologies AUIRF540ZS
- Part No.:
- AUIRF540ZS
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
AUIRF540ZS.pdf
- Description:
- MOSFET N-CH 100V 36A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,704
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Product details
Overview
AUIRF540ZS from Infineon is an automotive-grade N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 100 V VDSS, 36 A continuous drain current at TC = 25°C, and 21 mΩ typical RDS(on) at VGS = 10 V. It delivers fast switching (tr = 51 ns, tf = 39 ns), 175°C junction operation, and 120 mJ tested single-pulse avalanche energy - enabling robust high-current DC motor control and power conversion in engine management systems.
For engineers reviewing the AUIRF540ZS datasheet, AUIRF540ZS pinout, AUIRF540ZS application, or AUIRF540ZS equivalent, this page provides verified electrical parameters, thermal derating data, body diode recovery characteristics (trr = 33–50 ns), and automotive qualification context per AEC-Q101 - critical for under-hood power stage design and reliability validation.
Technical Context
This device uses Infineon's HEXFET® process to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its 175°C maximum junction temperature and 0.61 W/°C linear derating factor support sustained high-power operation in thermally constrained automotive environments.
The MOSFET features a fully characterized body diode with VSD = 1.3 V at IS = 22 A and Qrr = 41–62 nC, enabling efficient synchronous rectification and freewheeling in buck converters and H-bridge motor drives without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source voltage before breakdown, suitable for 48 V automotive battery systems and 24 V industrial rails. |
| RDS(on) typ. | 21 mΩ at VGS = 10 V, ID = 22 A - Enables <1 W conduction loss at 22 A, reducing heatsink requirements in high-current switching nodes. |
| ID cont. @ TC = 25°C | 36 A - Silicon-limited continuous current rating, defining maximum steady-state load handling in PCB-mounted configurations. |
| EAS tested | 120 mJ - Verified single-pulse avalanche energy at TJ = 25°C, L = 0.46 mH, IAS = 20 A - supports reliable operation during inductive load turn-off transients. |
| tr/tf | 51 ns / 39 ns - Fast rise/fall times minimize switching losses in PWM frequencies up to 100 kHz, improving efficiency in motor gate drivers. |
| Qg | 42–63 nC - Total gate charge determines driver strength requirement; compatible with standard 1–2 A peak gate drivers (e.g., IR2104, UCC27531). |
| TJ max | +175°C - Enables operation in under-hood locations (e.g., transmission control units, EPS modules) without derating below ambient extremes. |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount, isolated tab (drain-connected), 3-pin configuration with exposed copper pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 (center) | Drain (D) | Internally connected to metal tab; primary high-side power path and thermal interface - must be electrically isolated from heatsink unless referenced to system ground. |
| Pin 1 | Gate (G) | Control input requiring 10 V for full enhancement; gate threshold VGS(th) = 2.0–4.0 V ensures noise immunity in noisy automotive environments. |
| Pin 3 | Source (S) | Power return node; connects to low-side switch reference or ground plane; body diode anode - conducts reverse current during freewheeling. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test standards including HTOL, TC, UHAST - required for engine control, braking, and steering ECUs. |
| Repetitive avalanche rated | Supported up to TJmax with defined EAR curves - enables safe operation in unclamped inductive switching without snubber networks. |
| Ultra-low RDS(on) | 21 mΩ typ. at 10 V drive - reduces I²R losses by >30% vs. legacy 40 mΩ MOSFETs, directly lowering thermal design burden. |
| Fast body diode recovery | trr = 33–50 ns, Qrr = 41–62 nC - minimizes reverse recovery spikes and EMI in half-bridge topologies operating above 20 kHz. |
| Lead-free & RoHS compliant | Meets EU Directive 2011/65/EU and JESD204B reflow profile - supports automated SMT assembly and environmental compliance for Tier 1 suppliers. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Electric Power Steering (EPS) Motor Phase Switch |
|---|---|
|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with inductive kickback suppression. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization/de-energization; handles repetitive 20 A pulses at 1–5 Hz. Use Value: 175°C rating prevents thermal shutdown during extended idling; 120 mJ avalanche energy absorbs inductive flyback without external TVS. |
Use Scenario: Half-bridge phase leg in 48 V EPS motor drive delivering up to 30 A peak current. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in three-phase inverter; operates at 10–20 kHz PWM with fast body diode commutation. Use Value: 51 ns rise time and 33 ns reverse recovery minimize shoot-through risk and switching losses at 15 kHz carrier frequency. |
| Automotive HVAC Blower Motor Controller | 12 V/48 V DC-DC Converter Primary Switch |
|
Use Scenario: PWM-controlled brushed DC blower motor in cabin climate systems with variable speed demand. IC Role / Device Role / Timing Role: Low-side MOSFET in buck-derived speed controller; switches 25 A continuous load with 100% duty cycle capability. Use Value: 36 A continuous rating at TC = 25°C and 0.61 W/°C derating allow stable operation on compact aluminum heatsinks inside dashboard enclosures. |
Use Scenario: Primary-side switch in isolated flyback or forward converter converting 48 V battery to 12 V auxiliary rail. IC Role / Device Role / Timing Role: Main power switch subjected to 100 V VDS stress and repetitive 22 A drain current at 100 kHz. Use Value: 100 V VDSS margin accommodates 48 V system transients (ISO 7637-2 Pulse 5a); 21 mΩ RDS(on) keeps conduction loss below 12 W at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N10F7 | 100 V, 130 A, RDS(on) = 6.5 mΩ typ., DFN8 5×6 mm package - lower RDS(on) but no automotive qualification. | Not AEC-Q101 qualified; unsuitable for safety-critical ECU or EPS use; limited to non-automotive industrial motor drives. | Select only for cost-sensitive, non-automotive 100 V applications where footprint and thermal performance outweigh qualification needs. |
| IRF540NPBF | 100 V, 33 A, RDS(on) = 44 mΩ typ., TO-220 package - higher on-resistance, lower current, non-automotive grade. | Lacks 175°C rating and avalanche testing; not validated for automotive thermal cycling or humidity exposure. | Acceptable for prototyping or non-automotive 24 V motor control where qualification and thermal headroom are not required. |
Compared with STL130N10F7 and IRF540NPBF, AUIRF540ZS uniquely combines AEC-Q101 qualification, 175°C operation, and 21 mΩ RDS(on) in D2PAK - making it the only option among the three validated for production automotive power stages requiring both reliability and efficiency.
Availability
AUIRF540ZS is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and HVAC blower motor controllers requiring stable component supply across automotive production lifecycles.
Supply support for AUIRF540ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy markets.
AUIRF540ZS belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine management, chassis, and electrified vehicle subsystems.
FAQ
Is AUIRF540ZS pin-compatible with AUIRF540Z?
Yes - both share identical pinout (G-S-D) and electrical specifications, but AUIRF540ZS uses D2PAK (TO-263) packaging while AUIRF540Z uses TO-220AB. The D2PAK offers superior thermal resistance (RθJA = 40°C/W vs. 62°C/W) and surface-mount compatibility, requiring PCB layout revision but no schematic change.
What is the maximum gate drive voltage for AUIRF540ZS?
The absolute maximum gate-to-source voltage is ±20 V. Operation above +15 V provides no RDS(on) improvement and risks gate oxide degradation; +10 V is the recommended drive level for full enhancement and long-term reliability per Infineon's application notes AN-994 and AN-1005.
Does AUIRF540ZS require a gate resistor in automotive applications?
Yes - a 10–22 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance (Ciss = 1770 pF), especially in high-di/dt environments like fuel injector drivers. This prevents false turn-on and ensures controlled dv/dt during switching transitions.
Can AUIRF540ZS replace IRF540N in existing designs?
No - although both are 100 V N-channel MOSFETs, AUIRF540ZS is AEC-Q101 qualified, rated for 175°C operation, and specified for repetitive avalanche, whereas IRF540N is commercial-grade with 150°C max junction temperature and no automotive qualification. Substitution requires full thermal, reliability, and functional safety revalidation.
AUIRF540ZS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 26.5mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1770 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 92W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
AUIRF540ZS FAQ
1.How can I place an order for AUIRF540ZS through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF540ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF540ZS reliable?
The price and inventory of AUIRF540ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF540ZS is usually 5 days.
3.What payment methods are accepted for AUIRF540ZS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF540ZS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF540ZS?
AUIRF540ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF540ZS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF540ZS?
For technical support, including AUIRF540ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF540ZS requirements.
6.How does Aetrix verify that AUIRF540ZS is sourced from the original manufacturer or authorized distributors?
All AUIRF540ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF540ZS meets industry standards.
7.What is the process for return or replacement of AUIRF540ZS?
All AUIRF540ZS units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF540ZS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF540ZS part is unused and in its original packaging.
Return procedure for AUIRF540ZS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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