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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF540ZXKMA1

Name: AUIRF540ZXKMA1
Brand: Infineon Technologies
SKU: AUIRF540ZXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF540ZXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AUIRF540ZXKMA1.pdf

Description:: MOSFET_(75V 120V(

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF540ZXKMA1 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 100 V V_DS, 36 A continuous drain current at T_C = 25°C, and 21 mΩ typical R_DS(on) at V_GS = 10 V. It operates up to 175°C junction temperature and supports fast switching with 15 ns turn-on delay and 39 ns fall time, enabling high-efficiency DC-DC conversion and motor control in engine management systems.

For engineers reviewing the AUIRF540ZXKMA1 datasheet, AUIRF540ZXKMA1 pinout, AUIRF540ZXKMA1 application, or AUIRF540ZXKMA1 equivalent, key selection criteria include its 100 V breakdown voltage, 21 mΩ on-resistance, 175°C thermal rating, repetitive avalanche capability (120 mJ tested), and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction losses while maintaining robust ruggedness. Its 175°C maximum junction temperature and 1.64°C/W junction-to-case thermal resistance support high-power density designs in constrained under-hood environments.

The device features a fully characterized body diode with 33–50 ns reverse recovery time and 41–62 nC Q_rr, enabling reliable operation in synchronous rectification and inductive load switching. Gate charge parameters (Q_g = 42–63 nC, Q_gd = 15 nC) are optimized for low-loss gate drive in 100 kHz–500 kHz switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a without clamping.
R_DS(on) typ.	21 mΩ @ V_GS = 10 V, I_D = 22 A - Enables ≤0.5 W conduction loss at 50 A peak in 12 V systems.
I_D cont.	36 A @ T_C = 25°C - Supports high-current solenoid drivers and starter relays with margin.
E_AS tested	120 mJ - Validated unclamped inductive switching energy at I_AS = 20 A, L = 0.46 mH.
t_r/t_f	51 ns / 39 ns - Allows efficient hard-switching at ≥200 kHz in buck converters and H-bridge inverters.
T_J max	175°C - Meets AEC-Q101 requirements for under-hood power electronics including transmission control units.
Q_g	42–63 nC - Determines gate driver current requirement (~1.3 A avg. for 100 ns rise time).

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 1.1 N·m screw torque rating, and 300°C soldering tolerance for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulating washer when mounted to heatsink.
Source	Reference node for gate drive and current return	Low-inductance connection point for sense resistor placement and gate driver ground reference.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <200 nA leakage handling; sensitive to ESD (±20 V absolute max).

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified for engine control, transmission, and chassis modules.
Repetitive avalanche rating	Rated for unlimited repetitive unclamped inductive switching up to T_Jmax, validated per AN-1005.
Ultra-low R_DS(on)	21 mΩ typ. reduces conduction loss by >35% vs. legacy 100 V MOSFETs in 12 V/24 V systems.
Fast body diode	33–50 ns t_rr and 41–62 nC Q_rr enable efficient freewheeling in BLDC motor drives.
Thermal robustness	175°C T_J max and 0.61 W/°C linear derating allow sustained 25 A operation at 100°C case temperature.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse width and 10–20 Hz frequency.

IC Role / Device Role / Timing Role: Main power switch delivering precise current pulses to solenoid-based injectors.

Use Value: 21 mΩ R_DS(on) limits power loss to <0.5 W during 5 A peak injection, reducing thermal stress on PCB layout.

Use Scenario: PWM-controlled 24 V blower motor in climate control systems with variable speed demand.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration managing bidirectional airflow.

Use Value: 175°C T_J rating ensures reliability in sealed dash environments where ambient exceeds 85°C.

Transmission Control Module (TCM) Solenoid Driver

12 V Starter Relay Replacement

Use Scenario: Driving 12 V/3 A hydraulic pressure control solenoids in automatic transmissions.

IC Role / Device Role / Timing Role: High-current, high-reliability switch handling repeated 100 ms actuation cycles.

Use Value: Repetitive avalanche rating absorbs inductive kickback without external snubbers, simplifying BOM.

Use Scenario: Solid-state replacement for mechanical starter relays in 12 V cranking circuits.

IC Role / Device Role / Timing Role: Primary current path switch carrying 300–500 A surge for <1 s during engine start.

Use Value: 140 A pulsed drain rating and 92 W power dissipation support short-duration cranking loads without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	100 V, 100 A, R_DS(on) = 9.5 mΩ, D²Pak package, no AEC-Q101 certification	Higher current capacity but lacks automotive qualification and has higher gate charge (75 nC)	Preferred for non-automotive industrial motor drives where cost-per-watt is critical and qualification not required.
IRF540N	100 V, 33 A, R_DS(on) = 44 mΩ, TO-220, commercial grade only, no avalanche testing data	Lower thermal rating (175°C not guaranteed), no repetitive avalanche spec, higher conduction loss	Suitable for cost-sensitive consumer-grade 12 V power supplies where automotive reliability is not mandated.

Compared with STP100N10F7 and IRF540N, AUIRF540ZXKMA1 delivers verified automotive ruggedness, lower R_DS(on) than IRF540N, and tighter thermal specs than STP100N10F7-making it optimal for safety-critical engine and transmission control nodes.

Availability

AUIRF540ZXKMA1 is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and HVAC blower motor controllers requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF540ZXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRF540ZXKMA1 belongs to the automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V power switching in engine, chassis, and body control modules.

FAQ

Is AUIRF540ZXKMA1 pin-compatible with IRF540N?

Yes, AUIRF540ZXKMA1 uses the same TO-220AB footprint and pinout (G-S-D) as IRF540N, enabling drop-in replacement in existing layouts. However, its gate threshold voltage (2.0–4.0 V) and lower R_DS(on) (21 mΩ vs. 44 mΩ) may require verification of gate drive strength and thermal margin in legacy designs.

What is the maximum recommended gate resistor value for hard-switching at 200 kHz?

For 200 kHz switching with 10 V gate drive, a 10 Ω gate resistor balances switching loss and EMI. This yields ~100 ns rise/fall times given Q_g = 42–63 nC and gate driver output impedance <1 Ω, staying within safe SOA limits per Figure 8.

Does AUIRF540ZXKMA1 require a heatsink in a 25 A continuous application?

Yes. At 25 A and 21 mΩ R_DS(on), conduction loss is ~13 W. With R_θJC = 1.64°C/W and ambient ≤85°C, a heatsink with R_θSA ≤ 3.5°C/W is required to maintain T_J ≤ 175°C, assuming 0.5°C/W interface resistance.

Can AUIRF540ZXKMA1 be used in synchronous rectification topologies?

Yes-the body diode's 33–50 ns t_rr and low Q_rr (41–62 nC) support synchronous rectification in 12 V/24 V DC-DC converters up to 300 kHz. However, external Schottky diodes remain preferred for <100 ns recovery in high-frequency LLC resonant converters.

AUIRF540ZXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-904

AUIRF540ZXKMA1 FAQ

1.How can I place an order for AUIRF540ZXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF540ZXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF540ZXKMA1 reliable?

The price and inventory of AUIRF540ZXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF540ZXKMA1 is usually 5 days.

3.What payment methods are accepted for AUIRF540ZXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF540ZXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF540ZXKMA1?

AUIRF540ZXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF540ZXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF540ZXKMA1?

For technical support, including AUIRF540ZXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF540ZXKMA1 requirements.

6.How does Aetrix verify that AUIRF540ZXKMA1 is sourced from the original manufacturer or authorized distributors?

All AUIRF540ZXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF540ZXKMA1 meets industry standards.

7.What is the process for return or replacement of AUIRF540ZXKMA1?

All AUIRF540ZXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF540ZXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF540ZXKMA1 part is unused and in its original packaging.

Return procedure for AUIRF540ZXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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