Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRF6218STRL

Part No.:
AUIRF6218STRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixAUIRF6218STRL.pdf
Description:
MOSFET P-CH 150V 27A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,502

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRF6218STRL from Infineon is an automotive-grade P-channel HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for -150V VDS, 120 mΩ RDS(on) @ -10V VGS, -27A continuous drain current at TC = 25°C, and 175°C maximum junction temperature. It serves as a high-reliability high-side or reverse-polarity protection switch in 12V/24V automotive power distribution systems.

For engineers reviewing the AUIRF6218STRL datasheet, AUIRF6218STRL pinout, AUIRF6218STRL application, or AUIRF6218STRL equivalent, key selection criteria include its fully avalanche-rated capability (210 mJ EAS), dynamic dv/dt rating (8.2 V/ns), low gate charge (71 nC typ.), and RoHS-compliant lead-free construction validated to AEC-Q101 standards.

Technical Context

This device implements a cellular planar silicon structure optimized for low on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its body diode exhibits 150 ns reverse recovery time and 860 nC Qrr at -16A, enabling efficient synchronous rectification or freewheeling in DC-DC converters.

The MOSFET operates with gate threshold voltage between -3.0 V and -5.0 V, ensuring robust turn-on under cold-crank conditions (-40°C ambient), and features a thermal resistance of 0.61°C/W (junction-to-case), supporting high-power dissipation in compact engine bay layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDS -150 V - Withstands reverse battery connection and load dump transients up to ISO 7637-2 Pulse 5a in automotive 24V systems.
RDS(on) max 150 mΩ @ -10V VGS, -16A - Enables <1.2W conduction loss at 27A, critical for thermally constrained fuse-box modules.
ID cont -27 A @ TC = 25°C - Supports high-current solenoid drivers and HVAC blower motor control without external heatsinking.
EAS 210 mJ - Allows safe operation during unclamped inductive switching events (e.g., relay coil de-energization) without snubbers.
Qg 71 nC typ. - Reduces gate drive power and enables use with low-current microcontroller GPIOs via discrete buffer stages.
TJ max +175°C - Meets under-hood temperature requirements for transmission control units and ADAS domain controllers.
dv/dt 8.2 V/ns - Suppresses false turn-on during fast-rising noise in high-noise engine environments.

Pinout & Package

Package: D2Pak (TO-263AB), surface-mount, isolated tab (drain-connected), 3-pin configuration with industry-standard footprint.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control input requiring -10V to fully enhance; threshold range (-3.0 to -5.0 V) ensures immunity to system noise below -2.5V.
2 (D) Drain High-side switch node; electrically connected to exposed copper tab for thermal conduction and high-current return path.
3 (S) Source Reference node for gate drive; tied to system ground in high-side configurations or to battery positive in reverse-polarity protection.

Key Features

Feature Design Value
Automotive qualification AEC-Q101 qualified for engine control, body electronics, and chassis systems with full traceability and zero-defect manufacturing.
Fully avalanche rated Rated for repetitive unclamped inductive switching up to TJmax; eliminates need for external clamping diodes in relay/solenoid drivers.
Low RDS(on) × Qg figure-of-merit 120 mΩ × 71 nC = 8.52 Ω·nC - Optimized for high-frequency (>100 kHz) DC-DC conversion with minimal switching + conduction loss trade-off.
Dynamic dv/dt immunity 8.2 V/ns rating prevents spurious turn-on during fast transients in alternator ripple or ignition noise environments.
Lead-free & RoHS compliant Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for Pb-free assembly compatibility.

Applications

Engine Control Unit (ECU) Power Switching Reverse Polarity Protection

Use Scenario: High-side switching of fuel injector drivers and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as controlled high-side power switch with precise timing synchronized to crankshaft position signals.

Use Value: 175°C operation sustains reliability during prolonged idle-stop cycles; 210 mJ EAS absorbs energy from inductive kickback without failure.

Use Scenario: Input protection circuit for infotainment head units and telematics modules against incorrect battery terminal connection.

IC Role / Device Role / Timing Role: Reverse-biased P-MOSFET blocking reverse current flow while conducting forward current with minimal voltage drop.

Use Value: 120 mΩ RDS(on) limits forward voltage drop to <3.2 V at 27A, preserving system efficiency and reducing heat generation in sealed enclosures.

Body Control Module (BCM) Load Management DC-DC Converter Synchronous Rectifier

Use Scenario: Centralized power distribution for lighting, window lifters, and seat motors in modern BCMs.

IC Role / Device Role / Timing Role: High-current load switch enabling PWM dimming and diagnostic current sensing via RDS(on).

Use Value: -27A continuous rating supports multi-load aggregation; 150 ns trr enables fast PWM switching up to 20 kHz without shoot-through risk.

Use Scenario: Secondary-side synchronous rectification in 48V–12V bidirectional DC-DC converters for 48V mild hybrid architectures.

IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode, driven by gate signal referenced to source potential.

Use Value: 860 nC Qrr and 150 ns trr minimize reverse recovery losses; -1.6 V VSD reduces conduction loss versus 0.5 V Schottky alternatives at high current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP140NF55 55V VDS, 14 mΩ RDS(on), TO-220 package, non-automotive grade Limited to 12V systems; lacks AEC-Q101 qualification and avalanche rating Select only for cost-sensitive non-automotive industrial controls where 150V rating and 175°C operation are unnecessary.
IPB180N15N3 G 150V VDS, 1.8 mΩ RDS(on), TSDSON-8 package, AEC-Q101 qualified Lower RDS(on) but requires PCB-level gate driver due to 3.3V logic-level compatibility and smaller thermal mass Prefer for space-constrained 48V systems needing ultra-low conduction loss; avoid if existing layout uses D2Pak footprint or requires high single-pulse energy handling.

Compared with STP140NF55 and IPB180N15N3 G, AUIRF6218STRL uniquely balances 150V ruggedness, 175°C operation, and D2Pak thermal performance-making it optimal for legacy and new 24V automotive power switches where mechanical robustness and proven field reliability outweigh ultra-low RDS(on) demands.

Availability

AUIRF6218STRL is available at Aetrix Electronics and suitable for engine control units, body control modules, and reverse-polarity protection circuits requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF6218STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

AUIRF6218STRL belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12V/24V/48V vehicle subsystems demanding AEC-Q101 compliance, extended temperature operation, and robust transient immunity.

FAQ

Is AUIRF6218STRL pin-compatible with AUIRF6218S?

Yes - AUIRF6218STRL is the tape-and-reel variant of AUIRF6218S, sharing identical D2Pak (TO-263AB) pinout, electrical specifications, and thermal characteristics. The "TRL" suffix denotes packaging format only; no functional or parametric differences exist between the two orderables.

Can AUIRF6218STRL be used in high-frequency PWM applications above 100 kHz?

Yes - with total gate charge of 71 nC (typ.) and fast switching times (tr = 70 ns, tf = 30 ns), it supports PWM frequencies up to 500 kHz in hard-switched topologies when paired with appropriate gate drivers and layout practices minimizing parasitic inductance.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 175°C, matching the rated junction temperature. Derating begins at TC > 25°C per the linear derating factor of 1.6 W/°C, meaning maximum power dissipation drops to 120 W at TC = 100°C under board-mounted conditions.

Does AUIRF6218STRL require a gate resistor for automotive EMI suppression?

Yes - a 10–39 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET output capacitance, especially in noisy engine compartments. This improves dv/dt immunity and reduces radiated emissions without significantly impacting switching speed.

AUIRF6218STRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2210 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

AUIRF6218STRL FAQ

1.How can I place an order for AUIRF6218STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF6218STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF6218STRL reliable?

The price and inventory of AUIRF6218STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF6218STRL is usually 5 days.

3.What payment methods are accepted for AUIRF6218STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF6218STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF6218STRL?

AUIRF6218STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF6218STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF6218STRL?

For technical support, including AUIRF6218STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF6218STRL requirements.

6.How does Aetrix verify that AUIRF6218STRL is sourced from the original manufacturer or authorized distributors?

All AUIRF6218STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF6218STRL meets industry standards.

7.What is the process for return or replacement of AUIRF6218STRL?

All AUIRF6218STRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF6218STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF6218STRL part is unused and in its original packaging.

Return procedure for AUIRF6218STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRF6218STRL Tags

  • AUIRF6218STRL
  • AUIRF6218STRL PDF
  • AUIRF6218STRL Datasheet
  • AUIRF6218STRL Specifications
  • AUIRF6218STRL Images
  • Infineon Technologies
  • Infineon Technologies AUIRF6218STRL
  • Buy AUIRF6218STRL
  • AUIRF6218STRL Price
  • AUIRF6218STRL Distributor
  • AUIRF6218STRL Supplier
  • AUIRF6218STRL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER