Infineon Technologies AUIRF7207QTR

Overview

AUIRF7207QTR from Infineon Technologies is an automotive-grade P-channel HEXFET® Power MOSFET in SO-8 package, rated for -20V V_DSS, 0.06Ω R_DS(on) at V_GS = -4.5V, and -5.4A continuous drain current at 25°C. It delivers logic-level gate drive compatibility, 150°C junction operation, and full avalanche rating for robust load switching in vehicle body electronics.

For engineers reviewing the AUIRF7207QTR datasheet, AUIRF7207QTR pinout, AUIRF7207QTR application, or AUIRF7207QTR equivalent, key selection criteria include its -20V breakdown voltage, low on-resistance under 4.5V gate drive, SO-8 thermal performance (R_θJA = 50°C/W), automotive qualification per AEC-Q101, and body diode recovery characteristics (t_rr = 42–63 ns).

Technical Context

This P-channel MOSFET operates with a gate threshold voltage of -0.7V to -1.6V and supports logic-level control down to -2.7V V_GS, enabling direct interface with 3.3V/5V microcontrollers. Its dynamic parameters include 15–22 nC total gate charge and 5.7–8.6 nC Miller charge, supporting fast switching (t_d(on) = 11 ns, t_f = 41 ns) in high-frequency DC-DC and load-switching topologies.

The device integrates a rugged p-n junction body diode with -1.0V forward voltage at -3.1A and 5.0 V/ns peak diode recovery dv/dt capability at 175°C. Thermal design is enabled by its 150°C maximum junction temperature, 140 mJ single-pulse avalanche energy, and SO-8 footprint optimized for copper-board thermal dissipation (P_D = 2.5 W at T_A = 25°C).

Key Specifications

Pinout & Package

SO-8 surface-mount package with exposed drain pads on pins 1–3 and 5–7; standard JEDEC MS-012AA outline, 5.0 × 4.0 mm footprint, 1.27 mm pitch, and 1.75 mm max height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Compared with IPB80P03P4L-04 and SPB08N60C3, AUIRF7207QTR offers optimal balance of SO-8 compactness, -20V rating matched to 12V systems, logic-level operation, and AEC-Q101 compliance-making it the default choice for space-constrained automotive body electronics without gate driver overhead.

Availability

AUIRF7207QTR is available at Aetrix Electronics and suitable for automotive body control modules, seat/mirror actuation systems, and engine bay fan control requiring stable component supply across production lifecycles.

Supply support for AUIRF7207QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

AUIRF7207QTR belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12V vehicle subsystems demanding AEC-Q101 qualification, low on-resistance, and robust transient handling.

FAQ

What is the maximum gate-to-source voltage rating for AUIRF7207QTR?

The absolute maximum V_GS is ±12 V, with a single-pulse rating of -16 V for gate-to-source voltage under transient conditions (t_p < 10 µs). Exceeding ±12 V during steady-state operation risks gate oxide damage; design must limit gate drive to this range using clamping or resistor-divider networks.

Does AUIRF7207QTR require a gate driver in 3.3V microcontroller applications?

No external gate driver is required: the device fully enhances at V_GS = -2.7V, making it compatible with standard 3.3V GPIO outputs when used in high-side configuration with inverted logic. Gate charge of 15–22 nC allows clean switching at ≤100 kHz without driver amplification.

How does the body diode performance impact reverse-current applications?

The integrated body diode has V_SD = -1.0 V at -3.1A and t_rr = 42–63 ns, enabling efficient freewheeling in inductive loads. Its 5.0 V/ns dv/dt rating at 175°C ensures reliable commutation during fast turn-off, critical for solenoid and motor control without external diodes.

Is AUIRF7207QTR suitable for hot-swap or inrush current limiting?

Yes: its -20V V_DSS, 0.06Ω R_DS(on), and 140 mJ avalanche rating support controlled turn-on into capacitive loads. Combined with SO-8 thermal resistance (50°C/W), it sustains brief inrush events in 12V distribution modules when paired with appropriate gate slew-rate control.