Infineon Technologies AUIRF7416QTR

Overview

AUIRF7416QTR from Infineon is a P-channel automotive-grade HEXFET® Power MOSFET in SO-8 package, rated for -30 V V_DS, 0.02 Ω R_DS(on) at -10 V V_GS, and -10 A continuous drain current at 25°C. It features logic-level gate drive, full avalanche rating, and 150°C junction operation-designed for high-reliability load switching in engine control units, body electronics, and power distribution modules.

For engineers reviewing the AUIRF7416QTR datasheet, AUIRF7416QTR pinout, AUIRF7416QTR application, or AUIRF7416QTR equivalent, key selection criteria include its -30 V breakdown voltage, low on-resistance at 4.5 V gate drive, SO-8 thermal performance, automotive qualification per AEC-Q101, and body diode recovery characteristics for inductive load handling.

Technical Context

This P-channel MOSFET operates as a high-side load switch with negative gate-to-source control logic. Its cellular HEXFET® structure delivers low R_DS(on) per die area while maintaining rugged dv/dt immunity (-5.0 V/ns) and unclamped inductive switching capability (370 mJ E_AS). The device supports fast turn-on (18 ns t_d(on)) and turn-off (59 ns t_d(off)) under 6.2 Ω gate resistance.

Thermal design relies on SO-8 board-mounted R_θJA of 50°C/W, with linear derating beyond 25°C ambient. The integrated body diode exhibits 56–85 ns reverse recovery time (t_rr) and 99–150 nC Q_rr at -5.6 A, enabling robust freewheeling in DC-DC converters and motor drivers without external snubbing.

Key Specifications

Pinout & Package

Package: SO-8 surface-mount, 5.0 mm × 6.2 mm footprint, 1.27 mm lead pitch, JEDEC MS-012AA compliant. Thermal pad not present; power dissipation managed via copper pour under drain pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive power switching applications.

Compared with IPB80P04P4L-04 and SPB08N50C3, AUIRF7416QTR offers optimal balance of SO-8 footprint, -30 V rating, and 0.02 Ω on-resistance for space-constrained 12 V automotive loads-making it preferred for ECU/BCM integration where thermal density and gate drive simplicity are critical.

Availability

AUIRF7416QTR is available at Aetrix Electronics and suitable for engine control units, body control modules, and automotive DC-DC converters requiring stable component supply across production lifecycles.

Supply support for AUIRF7416QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

AUIRF7416QTR belongs to the HEXFET® automotive power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and body electronics systems.

FAQ

Is AUIRF7416QTR suitable for hot-swap applications in 12 V automotive systems?

Yes. Its -30 V V_DS rating provides 2× margin over nominal 12 V plus load dump transients up to 24 V. The device's dynamic dv/dt immunity (-5.0 V/ns) and low gate charge (61–92 nC) enable controlled turn-on during live insertion, minimizing inrush current and contact arcing in fuse box or junction box modules.

What is the maximum continuous drain current at 100°C ambient temperature?

At T_A = 100°C, derated current is approximately -3.5 A. This is calculated using R_θJA = 50°C/W and T_J(max) = 150°C: ΔT = 50°C → P_D = 50°C / 50°C/W = 1.0 W → I_D = √(P_D/R_DS(on)) = √(1.0/0.02) ≈ 7.1 A at 25°C ambient; applying linear derating yields ~3.5 A at 100°C ambient with still-air conditions.

Does AUIRF7416QTR require a gate resistor for safe operation?

A gate resistor is recommended between 10 Ω and 47 Ω to dampen ringing and limit peak gate current during fast switching. With Q_g = 61–92 nC and typical MCU rise time < 10 ns, peak current can exceed 9 A; a 22 Ω resistor limits this to ~450 mA while preserving 50 ns switching transitions, per Fig. 10 waveforms.

Can the body diode be used for reverse polarity protection in automotive power inputs?

No. The body diode conducts from source to drain (anode at S, cathode at D), making it unsuitable for reverse polarity protection. For that function, a P-channel MOSFET must be configured as a high-side switch with gate driven below source potential-AUIRF7416QTR supports this topology, but the body diode itself does not block reverse voltage.