Infineon Technologies AUIRF7478Q

Overview

AUIRF7478Q from Infineon is an automotive-grade N-channel enhancement-mode MOSFET in SO-8 package, rated for 60 V V_DS, 7.0 A continuous drain current at 25°C, and 20 mΩ typical R_DS(on) at V_GS = 10 V. It features logic-level gate drive (V_GS(th) = 1.0–3.0 V), 150°C junction operation, and repetitive avalanche capability-designed for high-efficiency DC-DC converters and motor control in engine management and body electronics.

For engineers reviewing the AUIRF7478Q datasheet, AUIRF7478Q pinout, AUIRF7478Q application, or AUIRF7478Q equivalent, key selection criteria include its SO-8 thermal performance (R_θJA = 50 °C/W), fast switching (t_r = 2.6 ns, t_f = 13 ns), and automotive qualification per AEC-Q101 with guaranteed 140 mJ single-pulse avalanche energy.

Technical Context

This HEXFET® power MOSFET employs advanced planar silicon processing to achieve low on-resistance density and robust dv/dt immunity (3.7 V/ns). Its body diode exhibits 52–78 ns reverse recovery time and 100–150 nC Q_rr, enabling reliable synchronous rectification and inductive load switching.

The device supports logic-level gate drive down to 4.5 V (R_DS(on) = 23 mΩ typ.), operates up to 150°C junction temperature, and delivers 21–31 nC total gate charge-optimized for high-frequency PWM control in compact automotive power stages.

Key Specifications

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation; standard JEDEC MS-012AA outline, 1.27 mm pitch, 5.0 × 4.0 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL10DN60M and NTMFS4C09NT1G, AUIRF7478Q offers balanced trade-offs: superior dv/dt immunity (3.7 V/ns vs. ≤2.5 V/ns), higher avalanche robustness (140 mJ), and proven SO-8 thermal behavior-making it optimal for cost-sensitive, thermally constrained automotive power stages where reliability under transient stress is critical.

Availability

AUIRF7478Q is available at Aetrix Electronics and suitable for engine control units, body control modules, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for AUIRF7478Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure.

AUIRF7478Q belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and body electronics subsystems.

FAQ

What is the maximum continuous drain current at 100°C ambient temperature?

The AUIRF7478Q supports 5.6 A continuous drain current at T_A = 70°C per datasheet; at 100°C ambient, derating applies using the linear factor of 0.02 W/°C. With P_D = 2.5 W at 25°C and R_θJA = 50 °C/W, maximum I_D drops to approximately 3.8 A to maintain T_J ≤ 150°C under still-air conditions on a 1"² copper board.

Is AUIRF7478Q suitable for high-side switching configurations?

Yes-AUIRF7478Q can be used in high-side configurations when paired with a gate driver capable of providing V_GS ≥ 10 V relative to the source node. Its 20 mΩ R_DS(on) and 60 V V_DS rating support 48 V bus applications; however, level-shifting gate drive and careful layout to manage shoot-through risk are required.

Does this MOSFET include integrated ESD protection?

No-AUIRF7478Q does not integrate on-die ESD protection diodes. Per datasheet Absolute Maximum Ratings, gate-to-source voltage is limited to ±20 V, and gate leakage is specified at ±100 nA. External TVS or RC snubbers are recommended for gate protection in automotive harness environments with high ESD coupling risk.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The body diode Q_rr is 100–150 nC under test conditions of I_F = 4.2 A, di/dt = 100 A/µs, and T_J = 25°C. This value directly impacts switching loss in synchronous rectification and freewheeling paths-designers should account for it in efficiency calculations and gate driver sizing to manage diode turn-off overshoot.