Infineon Technologies AUIRF7478QTR

Overview

AUIRF7478QTR from Infineon is an automotive-grade N-channel enhancement-mode MOSFET in SO-8 package, rated for 60 V V_DS, 7.0 A continuous drain current at 25°C, and 20 mΩ typical R_DS(on) at V_GS = 10 V. It features logic-level gate drive (V_GS(th) = 1.0–3.0 V), 150°C junction operation, and repetitive avalanche capability-designed for high-efficiency DC-DC converters and load switches in engine control units and body electronics.

For engineers reviewing the AUIRF7478QTR datasheet, AUIRF7478QTR pinout, AUIRF7478QTR application, or AUIRF7478QTR equivalent, key selection criteria include its SO-8 thermal performance (R_θJA = 50 °C/W), fast switching (t_r = 2.6 ns, t_f = 13 ns), low gate charge (Q_g = 21–31 nC), and automotive qualification per AEC-Q101.

Technical Context

This HEXFET® Power MOSFET uses advanced planar silicon processing to achieve low on-resistance density while maintaining ruggedness against dv/dt stress (3.7 V/ns) and unclamped inductive switching. Its body diode supports synchronous rectification with t_rr = 52–78 ns and Q_rr = 100–150 nC at 100 A/µs di/dt.

The device operates across –55°C to +150°C junction temperature, with dynamic R_DS(on) normalized to 1.0 at 25°C and ~2.2 at 150°C. Thermal design relies on its SO-8 board-mounted R_θJL = 20 °C/W and R_θJA = 50 °C/W ratings under standard 1"² copper conditions.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin, 5.0 mm × 6.2 mm footprint per JEDEC MS-012AA). Thermal pad not electrically connected; drain terminals are internally paralleled across pins 1–4 and 6–7.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7 and NTMFS4C09NT1G, AUIRF7478QTR delivers balanced performance: it matches NTMFS4C09NT1G's qualification while offering higher current headroom, and avoids STL220N6F7's certification gap-making it optimal for AEC-Q101–mandated ECU and ADAS subsystems.

Availability

AUIRF7478QTR is available at Aetrix Electronics and suitable for engine control units, automotive LED lighting systems, and body control modules requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRF7478QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and automotive qualification infrastructure.

AUIRF7478QTR belongs to the HEXFET® automotive MOSFET product line, engineered specifically for high-reliability power switching in harsh-temperature, high-vibration environments such as powertrain and chassis control systems.

FAQ

Is AUIRF7478QTR pin-compatible with standard SO-8 N-channel MOSFETs?

Yes-AUIRF7478QTR uses the JEDEC-standard SO-8 outline (MS-012AA) with drain-source-gate pinout matching industry conventions: pins 1–4 and 6–7 = Drain, pin 5 = Gate, pin 8 = Source. No PCB redesign is needed when replacing functionally similar SO-8 MOSFETs.

What is the maximum safe operating frequency for AUIRF7478QTR in a buck converter?

With t_r = 2.6 ns and t_f = 13 ns, AUIRF7478QTR supports switching frequencies up to 1 MHz in well-designed layouts. Practical limit is ~500 kHz for 12 V input, 5 A output designs due to gate drive strength and thermal constraints-not intrinsic device limitation.

Does AUIRF7478QTR require a gate resistor for automotive EMI compliance?

Yes-a series gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by PCB trace inductance and MOSFET C_iss/C_rss interaction. This controls dv/dt slew rate and reduces radiated emissions in 150 kHz–30 MHz CISPR 25 bands.

Can AUIRF7478QTR be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.065 V/°C) enables inherent current sharing. Parallel operation requires matched layout symmetry, identical gate drive paths, and thermal coupling via shared copper area to maintain <5°C inter-device ΔT_J.