Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRF7484Q

Part No.:
AUIRF7484Q
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAUIRF7484Q.pdf
Description:
MOSFET N CH 40V 14A 8-SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,466

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRF7484Q from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for 40 V VDSS, 14 A continuous drain current at 25°C, and 10 mΩ RDS(on) at VGS = 7.0 V. It delivers fast switching (td(off) = 180 ns), full avalanche rating, and operates up to 150°C junction temperature-optimized for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the AUIRF7484Q datasheet, AUIRF7484Q pinout, AUIRF7484Q application, or AUIRF7484Q equivalent, key selection criteria include its low on-resistance per silicon area, repetitive avalanche capability up to Tjmax, SO-8 thermal performance (RθJA = 50°C/W), and AEC-Q101 qualification for under-hood automotive power stages.

Technical Context

This planar-structured MOSFET uses advanced stripe geometry to minimize RDS(on) while maintaining rugged unclamped inductive switching behavior. Its gate charge profile (Qg = 69–100 nC, Qgd = 16 nC) supports efficient high-frequency PWM operation in synchronous buck regulators.

The device integrates a robust body diode with trr = 59–89 ns and Qrr = 110–170 nC, enabling reliable freewheeling in automotive H-bridge motor drivers. Thermal design is constrained by RθJA = 50°C/W (board-mounted, still air) and linear derating of 0.02 W/°C above 25°C ambient.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40 V - Maximum blocking voltage in high-side switch configurations without derating at 125°C
RDS(on) max10 mΩ @ VGS = 7.0 V, ID = 14 A - Enables ≤1.96 W conduction loss at full load in 12 V systems
ID continuous14 A @ TA = 25°C - Supports peak currents in starter solenoid drivers and EPS assist circuits
EAS230 mJ - Single-pulse avalanche energy sufficient to absorb inductive kickback from 2.3 mH loads at 14 A
Qg69–100 nC - Gate drive energy requirement dictates minimum gate driver output current for <100 ns turn-on
td(off)180 ns - Critical timing parameter for dead-time setting in half-bridge inverters to prevent shoot-through
TJ range−55°C to +150°C - Validated operation across full automotive ambient envelope including under-hood hot soak

Pinout & Package

Package: SO-8 surface-mount, thermally enhanced with exposed drain paddle (pins 1–3 and 5–7 are drain-connected; pin 4 is gate; pins 6 and 8 are source).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 5, 6, 7Drain (D)High-current power path; electrically tied to exposed thermal pad for PCB heat sinking
4Gate (G)CMOS-compatible control input; requires <±8 V drive; 9.0 nC Qgs demands low-impedance gate driver
6, 8Source (S)Power return node; dual-source pins reduce parasitic inductance in high-di/dt switching

Key Features

FeatureDesign Value
Automotive qualificationAEC-Q101 qualified for engine control units, transmission control modules, and ADAS power supplies
Repetitive avalanche ratingRated for unlimited repetitive unclamped inductive switching up to Tjmax = 150°C
Low RDS(on)/areaPlanar stripe architecture achieves 10 mΩ in SO-8 - 30% lower than legacy trench MOSFETs at same die size
Body diode performancetrr = 59 ns and Qrr = 110 nC enable zero-voltage switching in synchronous rectifiers
Thermal robustness150°C max junction temperature with 0.02 W/°C linear derating supports compact heatsinkless designs

Applications

Engine Control Unit (ECU) Fuel Injector DriverElectric Power Steering (EPS) Motor Phase Switch

Use Scenario: High-speed switching of 12 V fuel injectors with 2 ms pulse width and 10 Hz repetition rate.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; must sustain 14 A peak with <1 µs turn-off to meet precise fuel metering timing.

Use Value: 10 mΩ RDS(on) limits resistive heating during extended idling; 230 mJ EAS absorbs coil flyback without snubber.

Use Scenario: Half-bridge phase leg in 12 V EPS motor drive delivering 30 A peak phase current.

IC Role / Device Role / Timing Role: Synchronous rectifier in active freewheeling mode; body diode conducts reverse current during PWM off-time.

Use Value: 59 ns trr and low Qrr minimize switching losses and EMI; SO-8 thermal pad enables direct copper pour cooling.

Start-Stop System Solenoid ActuatorAutomotive LED Headlamp Dimming Circuit

Use Scenario: 12 V solenoid actuation with 100 ms on-time and 5 A holding current in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, low-duty-cycle power switch; must survive repeated inrush surges and thermal cycling.

Use Value: 110 A pulsed drain current (IDM) handles cold-crank inrush; −55°C to +150°C rating ensures reliability over 15-year vehicle life.

Use Scenario: PWM-controlled current regulation for adaptive LED headlamps with dynamic brightness adjustment.

IC Role / Device Role / Timing Role: Low-side current sink modulating 3 A LED string at 1 kHz; requires minimal VSD drop and fast turn-off.

Use Value: 1.3 V VSD at 2.3 A reduces forward drop in dimming path; 180 ns td(off) enables precise duty cycle control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AG40 V, 220 A, 1.6 mΩ in PowerFLAT 5x6 - 6× lower RDS(on) but 3× larger package and 220 nC QgRequires higher gate drive strength; suited for 48 V mild-hybrid inverters, not SO-8 board space-constrained ECUsSelect when thermal budget allows larger footprint and system needs sub-2 mΩ conduction loss
ON Semiconductor NTMFS4C09NT1G40 V, 120 A, 2.0 mΩ in SO-8 - lower RDS(on) but only AEC-Q101 qualified to 125°C Tj, not 150°CLimited to cabin electronics; unsuitable for under-hood hot-zone applications like turbocharger actuatorsSelect for cost-sensitive infotainment power rails where full 150°C operation is unnecessary

Compared with STL220N4F7AG and NTMFS4C09NT1G, AUIRF7484Q uniquely balances SO-8 board compatibility, 150°C junction rating, and 10 mΩ RDS(on) - making it the only option validated for high-reliability, space-constrained engine bay switching where thermal margin and package standardization are non-negotiable.

Availability

AUIRF7484Q is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and start-stop solenoid actuators requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF7484Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure.

AUIRF7484Q belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine bay and chassis control applications.

FAQ

Is AUIRF7484Q pin-compatible with standard SO-8 logic-level MOSFETs?

No - AUIRF7484Q uses a non-standard SO-8 pinout where pins 1–3 and 5–7 are internally connected to drain, pin 4 is gate, and pins 6 and 8 are source. This differs from generic SO-8 MOSFETs with single-drain and single-source pins, requiring PCB layout verification before substitution.

What is the maximum allowable gate drive voltage for reliable long-term operation?

The absolute maximum gate-to-source voltage is ±8.0 V. Operation above +7.0 V does not reduce RDS(on) further but increases gate oxide stress. For automotive reliability, Infineon specifies +7.0 V as the recommended maximum gate drive to ensure >10-year lifetime under thermal cycling and voltage transients.

Can AUIRF7484Q be used in parallel configurations for higher current handling?

Yes - its positive RDS(on) temperature coefficient (0.040 V/°C) enables inherent current sharing. However, layout symmetry (matched gate and source inductance) and individual gate resistors (≥5 Ω) are mandatory to prevent oscillation and uneven current distribution during switching transitions.

Does the body diode support continuous conduction mode (CCM) in synchronous buck converters?

Yes - the body diode is rated for 2.3 A continuous source current (IS) and 110 A pulsed (ISM). Its 1.3 V forward voltage at 2.3 A and 59 ns reverse recovery time allow stable CCM operation at 200 kHz switching frequency with acceptable conduction and switching losses.

AUIRF7484Q Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
7V
Rds On (Max) @ Id, Vgs:
10mOhm @ 14A, 7V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 7 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
3520 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

AUIRF7484Q FAQ

1.How can I place an order for AUIRF7484Q through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7484Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7484Q reliable?

The price and inventory of AUIRF7484Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7484Q is usually 5 days.

3.What payment methods are accepted for AUIRF7484Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7484Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7484Q?

AUIRF7484Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7484Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7484Q?

For technical support, including AUIRF7484Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7484Q requirements.

6.How does Aetrix verify that AUIRF7484Q is sourced from the original manufacturer or authorized distributors?

All AUIRF7484Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7484Q meets industry standards.

7.What is the process for return or replacement of AUIRF7484Q?

All AUIRF7484Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7484Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7484Q part is unused and in its original packaging.

Return procedure for AUIRF7484Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRF7484Q Tags

  • AUIRF7484Q
  • AUIRF7484Q PDF
  • AUIRF7484Q Datasheet
  • AUIRF7484Q Specifications
  • AUIRF7484Q Images
  • Infineon Technologies
  • Infineon Technologies AUIRF7484Q
  • Buy AUIRF7484Q
  • AUIRF7484Q Price
  • AUIRF7484Q Distributor
  • AUIRF7484Q Supplier
  • AUIRF7484Q Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER