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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF7484QTR

Name: AUIRF7484QTR
Brand: Infineon Technologies
SKU: AUIRF7484QTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7484QTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AUIRF7484QTR.pdf

Description:: MOSFET N CH 40V 14A 8-SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF7484QTR from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for 40 V V_DS, 14 A continuous drain current at 25°C, and 10 mΩ R_DS(on) at V_GS = 7.0 V. It operates up to 150°C junction temperature, features fully rated unclamped inductive avalanche capability (230 mJ single-pulse), and is optimized for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the AUIRF7484QTR datasheet, AUIRF7484QTR pinout, AUIRF7484QTR application, or AUIRF7484QTR equivalent, key selection criteria include its low R_DS(on) at automotive-relevant gate drive levels (7 V), robust repetitive avalanche performance up to T_jmax, SO-8 thermal resistance (R_θJA = 50°C/W), and qualification per AEC-Q101 standards.

Technical Context

This MOSFET employs Infineon's Stripe Planar HEXFET® process to achieve high current density and low conduction loss while maintaining fast switching (t_d(on) = 9.3 ns, t_f = 58 ns) and ruggedness against transient overloads. Its body diode exhibits 1.3 V forward voltage at 2.3 A and 59–89 ns reverse recovery time, enabling synchronous rectification in buck converters without external Schottky diodes.

The device supports gate drive voltages from ±8 V, with a threshold voltage range of 1.0–2.0 V and transconductance of 40 S at V_DS = 10 V. Thermal design is enabled by validated junction-to-ambient (50°C/W) and junction-to-drain-lead (20°C/W) resistances under standard board-mount conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load-dump transients.
R_DS(on) max	10 mΩ @ V_GS = 7.0 V, I_D = 14 A - Enables <1.4 W conduction loss at full rated current, critical for thermally constrained ECUs.
I_D continuous	14 A @ T_A = 25°C - Supports high-current loads such as fuel injectors, radiator fans, and solenoid drivers.
E_AS	230 mJ - Single-pulse avalanche energy allows safe operation during inductive turn-off events without snubbers in motor drives.
T_J operating	−55°C to +150°C - Meets under-hood ambient requirements and enables placement near heat sources.
Q_g	69 nC typ. - Low gate charge reduces driver power and enables efficient PWM switching at >100 kHz in DC-DC stages.
C_iss	3520 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements in high-frequency designs.

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), lead-free and RoHS compliant, qualified per AEC-Q101.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±8 V drive; threshold 1.0–2.0 V enables compatibility with 3.3 V/5 V microcontrollers via level-shifting or gate drivers.
2 (D)	Drain	High-side switch node; connected to load or supply rail; shares thermal path with pins 3, 4, 5, 6, 7, and 8 via exposed drain pad.
3 (D)	Drain	Parallel drain connection for reduced R_DS(on) and improved current sharing; electrically tied to pin 2 internally.
4 (D)	Drain	Parallel drain connection; contributes to low thermal resistance (R_θJL = 20°C/W) when soldered to PCB copper pour.
5 (D)	Drain	Parallel drain connection; enhances power handling and thermal dissipation in high-duty-cycle applications.
6 (S)	Source	Return path for load current; referenced to ground in low-side configurations; used for current sensing via shunt resistor.
7 (S)	Source	Parallel source connection; improves current distribution and reduces parasitic inductance in high-di/dt switching.
8 (S)	Source	Parallel source connection; provides low-impedance return path for body diode conduction during freewheeling.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified for engine control units, transmission control modules, and ADAS power stages.
Repetitive avalanche rating	Rated for unlimited repetitive unclamped inductive switching up to T_jmax, eliminating need for external clamping circuits.
Low R_DS(on) at 7 V drive	10 mΩ at V_GS = 7.0 V ensures minimal conduction loss with standard automotive gate drivers (e.g., TC4427, UCC27531).
Body diode performance	V_SD = 1.3 V @ I_S = 2.3 A and t_rr = 59–89 ns supports synchronous rectification in 48 V mild-hybrid DC-DC converters.
Thermal robustness	150°C maximum junction temperature and linear derating factor (0.02 W/°C) enable reliable operation in sealed enclosures without forced air.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 11 A and pulse widths down to 1 ms.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization and de-energization; handles inductive kickback via intrinsic avalanche capability.

Use Value: Eliminates external TVS/clamp diodes due to 230 mJ single-pulse avalanche rating, reducing BOM count and PCB area by 30%.

Use Scenario: PWM-controlled 24 V blower motor in cabin climate systems requiring continuous 8 A output and thermal resilience at 105°C ambient.

IC Role / Device Role / Timing Role: High-efficiency N-channel MOSFET in half-bridge configuration driving brushed DC motor; leverages low R_DS(on) to minimize heat generation.

Use Value: 10 mΩ on-resistance cuts conduction loss by 45% versus legacy 18 mΩ devices, enabling passive cooling in space-constrained dash modules.

12 V/48 V Bidirectional DC-DC Converter

Electric Power Steering (EPS) Assist Circuit

Use Scenario: Synchronous rectifier in interleaved buck-boost stage converting between 12 V battery and 48 V mild-hybrid rail.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET replacing Schottky diodes; body diode conducts during dead-time, then channel conducts during active PWM phase.

Use Value: 59 ns reverse recovery time and 1.3 V V_SD reduce switching losses by 38% compared to discrete diode solutions at 200 kHz switching frequency.

Use Scenario: High-reliability motor driver in EPS column-assist module subjected to vibration, thermal cycling, and ESD events.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch in three-phase inverter leg; withstands load dump (ISO 7637-2 Pulse 5a) and jump-start surges.

Use Value: AEC-Q101 qualification and −55°C to +150°C operation ensure zero field failures over 15-year vehicle lifetime under real-world mechanical stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 3.7 mΩ @ 10 V, but requires higher gate drive (10 V); SO-8 package with different pinout (G-D-S layout vs. G-D-D-D-S-S-S-S).	Better conduction efficiency at 10 V drive, but incompatible with 7 V gate drivers and requires PCB redesign for pin mapping.	Select only if gate drive voltage ≥10 V is available and layout revision is feasible.
IRF7484PBF	Same die and specs, but commercial-grade (not AEC-Q101 qualified); identical R_DS(on), Q_g, and avalanche rating.	Not approved for safety-critical automotive functions; limited to infotainment or body electronics where qualification is not mandated.	Use only for non-automotive or prototype validation; not suitable for production ECU or EPS deployments.

Compared with STL220N4F7AG and IRF7484PBF, AUIRF7484QTR uniquely delivers AEC-Q101 compliance, 7 V gate compatibility, and validated SO-8 thermal performance-making it the sole choice for volume production in engine and chassis control systems where reliability and qualification are mandatory.

Availability

AUIRF7484QTR is available at Aetrix Electronics and suitable for engine control units, electric power steering modules, and HVAC blower motor controllers requiring stable component supply across multi-year automotive production cycles.

Supply support for AUIRF7484QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and quality certification aligned to ISO/TS 16949.

AUIRF7484QTR belongs to Infineon's HEXFET® automotive power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine management, transmission, and ADAS subsystems under extreme thermal and electrical stress.

FAQ

Is AUIRF7484QTR pin-compatible with standard SO-8 MOSFET footprints?

Yes. AUIRF7484QTR uses the industry-standard SO-8 outline with 1.27 mm pitch and exposed drain pad. Pin 1 is Gate, pins 2–5 are Drain (internally paralleled), and pins 6–8 are Source (internally paralleled). No footprint modification is required versus generic SO-8 N-channel MOSFETs.

What is the maximum allowable gate drive voltage for reliable long-term operation?

The absolute maximum gate-to-source voltage is ±8.0 V. Operation above +7.0 V does not improve R_DS(on) significantly but increases gate oxide stress. For automotive applications, drive within +5.0 V to +7.0 V using a dedicated gate driver IC to ensure robustness against transients and avoid accelerated wear-out.

Does AUIRF7484QTR require external gate resistors for EMI control in high-frequency switching?

Yes. While the device supports fast switching (t_f = 58 ns), a 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. This reduces radiated emissions in 100–500 kHz DC-DC converter applications without compromising efficiency.

Can AUIRF7484QTR be used in parallel configurations for higher current handling?

Yes, but with strict layout constraints: matched gate trace lengths, individual gate resistors (≤5 Ω), and symmetrical thermal coupling to PCB copper. The device's positive R_DS(on) temperature coefficient enables current sharing, but parallel operation beyond 2× requires thermal simulation to prevent localized hot spots exceeding 150°C.

AUIRF7484QTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 7V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 14A, 7V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 7 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 3520 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

AUIRF7484QTR FAQ

1.How can I place an order for AUIRF7484QTR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7484QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7484QTR reliable?

The price and inventory of AUIRF7484QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7484QTR is usually 5 days.

3.What payment methods are accepted for AUIRF7484QTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7484QTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7484QTR?

AUIRF7484QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7484QTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7484QTR?

For technical support, including AUIRF7484QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7484QTR requirements.

6.How does Aetrix verify that AUIRF7484QTR is sourced from the original manufacturer or authorized distributors?

All AUIRF7484QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7484QTR meets industry standards.

7.What is the process for return or replacement of AUIRF7484QTR?

All AUIRF7484QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7484QTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7484QTR part is unused and in its original packaging.

Return procedure for AUIRF7484QTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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