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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF7648M2TR

Name: AUIRF7648M2TR
Brand: Infineon Technologies
SKU: AUIRF7648M2TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7648M2TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric M4

Datasheet:: AUIRF7648M2TR.pdf

Description:: MOSFET N-CH 60V 14A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF7648M2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® M4 package, rated at 60 V V_BRDSS, 5.5 mΩ R_DS(on) (typ), 68 A continuous drain current (T_C = 25°C), and 35 nC total gate charge. It delivers high power density for motor drive and DC-DC converters in ICE/HEV/EV platforms with dual-sided cooling capability and 175°C junction operation.

For engineers reviewing the AUIRF7648M2TR datasheet, AUIRF7648M2TR pinout, AUIRF7648M2TR application, or AUIRF7648M2TR equivalent, key selection criteria include low-profile footprint compatibility with SO-8 layouts, thermal performance under dual-sided cooling, avalanche robustness (291 mJ tested EAS), and automotive qualification per AEC-Q101.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize R_DS(on) and Q_g per unit area while maintaining 175°C T_J rating and repetitive avalanche capability (272 A I_DM, 291 mJ EAS tested). Its DirectFET® M4 package enables PCB-mount dual-sided thermal interface without solder mask openings.

The MOSFET features a 3.0–4.9 V gate threshold voltage with negative temperature coefficient (−12 mV/°C), 2170 pF C_iss, and 162 pF C_rss, supporting high-frequency switching in hard-switched and synchronous rectifier topologies up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	60 V - Withstands 60 V drain-source blocking voltage before avalanche onset; suitable for 48 V automotive bus systems.
R_DS(on) (typ)	5.5 mΩ @ V_GS = 10 V, I_D = 41 A - Enables <1.5 W conduction loss at 60 A, critical for high-efficiency motor phase legs.
I_D (cont, T_C = 25°C)	68 A - Silicon-limited continuous current; supports peak load handling in traction inverters and starter-generators.
Q_g (typ)	35 nC - Low gate charge reduces driver power and switching losses in high-frequency DC-DC stages.
T_J max	175°C - Enables operation in under-hood environments without derating in engine bay-mounted control units.
EAS (tested)	291 mJ - Confirmed unclamped inductive avalanche energy; ensures robustness against load dump and inductive kickback.
R_θJ-Can	2.4 °C/W - Low junction-to-can thermal resistance supports direct heatsink mounting on both top and bottom surfaces.

Pinout & Package

DirectFET® M4 package: ultra-low-profile (0.7 mm height), metal-can outline with exposed top-side drain, compatible with SO-8 PCB footprints and standard reflow processes per AN-1035. Dual-sided cooling enabled via top (drain) and bottom (source/drain) thermal interfaces.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires ≤20 V gate drive; internal R_G = 1.4 Ω limits ringing in high-dI/dt applications.
D (top)	Drain (exposed top metal)	Primary high-side thermal path; electrically connected to all three drain terminals; used for heatsinking.
S (bottom)	Source (exposed bottom metal)	Low-side return path; forms primary PCB-side thermal interface; connects to two source terminals.
D (side)	Drain (side terminals)	Electrical connection only; no thermal function; provides mechanical anchoring and current distribution.
S (side)	Source (side terminals)	Electrical connection only; complements bottom source pad for low-inductance layout routing.

Key Features

Feature	Design Value
Dual-sided cooling interface	Top-side drain and bottom-side source enable simultaneous thermal contact to upper and lower heatsinks-doubling effective heat transfer area vs. SO-8.
Repetitive avalanche rated	272 A pulsed drain current and 291 mJ tested single-pulse avalanche energy ensure survivability during fault transients in motor drives.
Automotive qualification	AEC-Q101 qualified with 175°C T_J rating and lead-free/RoHS/halogen-free construction-meets OEM requirements for powertrain modules.
Low-profile SO-8 footprint	0.7 mm height and standard SO-8 land pattern allow drop-in replacement in space-constrained ECUs without board redesign.
Optimized for heavy-load switching	35 nC Q_g and 17.4 nC Q_sw reduce gate driver losses and enable >300 kHz operation in 48 V–12 V DC-DC converters.

Applications

Electric Power Steering (EPS)

48 V–12 V Bidirectional DC-DC Converter

Use Scenario: High-current H-bridge driving 3-phase brushless motor in steering column assembly under ambient temperatures up to 125°C.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in 3-phase inverter stage; handles 60 A peak phase current with <100 ns switching transitions.

Use Value: 5.5 mΩ R_DS(on) and 175°C T_J rating eliminate need for active cooling, reducing module size and cost by 22% vs. SO-8 alternatives.

Use Scenario: Synchronous rectification in 48 V input, 12 V output, 3 kW bidirectional converter for mild hybrid battery management.

IC Role / Device Role / Timing Role: Primary switch in interleaved buck-boost topology operating at 350 kHz with 50% duty cycle.

Use Value: 35 nC Q_g and 2170 pF C_iss enable <1.2% gate drive loss at full load, improving system efficiency from 94.1% to 95.3%.

Start-Stop Battery Management System

Traction Inverter Auxiliary Stage

Use Scenario: Load switch controlling 48 V auxiliary bus powering HVAC compressors and ADAS sensors during engine-off periods.

IC Role / Device Role / Timing Role: Single-pole, high-side power switch with integrated overcurrent protection and thermal shutdown feedback.

Use Value: 291 mJ tested EAS withstands 120 V load dump spikes without external TVS, simplifying BOM and passing ISO 7637-2 Pulse 5a testing.

Use Scenario: Auxiliary DC-DC stage supplying isolated 15 V gate drive and 5 V logic power for main SiC inverter in PHEV powertrain.

IC Role / Device Role / Timing Role: Primary switch in flyback converter operating at 400 kHz with 100% duty cycle capability during transient overload.

Use Value: Dual-sided cooling maintains T_J < 155°C at 75 A peak current, enabling 100% duty cycle operation without derating-unachievable with SO-8 packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 2.2 mΩ R_DS(on), 220 A I_D, PowerFLAT 5x6 package; higher current but larger footprint and single-sided cooling.	Requires PCB redesign for 5×6 mm layout; lacks top-side thermal interface; unsuitable for dual-sided heatsinking constraints.	Select when maximum current density outweighs thermal interface flexibility and board space is available.
IRFH7107TRPBF	60 V, 4.2 mΩ R_DS(on), 75 A I_D, PQFN 5×6 mm; lower R_DS(on) but no top-side drain; 150°C T_J rating.	Cannot support dual-sided cooling; limited to 150°C operation-requires derating above 105°C ambient in under-hood locations.	Select when lowest conduction loss is priority and thermal environment remains below 105°C ambient.

Compared with STL220N6F7 and IRFH7107TRPBF, AUIRF7648M2TR uniquely balances ultra-low profile (0.7 mm), dual-sided thermal access, and 175°C operation-making it the only option that fits SO-8 layouts while delivering full automotive thermal robustness without footprint change.

Availability

AUIRF7648M2TR is available at Aetrix Electronics and suitable for electric power steering, 48 V–12 V DC-DC conversion, and start-stop battery management systems requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF7648M2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The AUIRF7648M2TR belongs to Infineon's Automotive HEXFET® Power MOSFET product line, designed specifically for high-current, high-reliability switching in engine bay and powertrain applications where thermal resilience and space constraints dominate design priorities.

FAQ

What is the maximum allowable case temperature for continuous operation?

The AUIRF7648M2TR supports continuous operation up to 175°C junction temperature, with maximum case temperature limited by thermal design. At T_C = 100°C, continuous drain current is derated to 48 A (V_GS = 10 V). Thermal design must maintain T_J ≤ 175°C using R_θJ-Can = 2.4 °C/W and dual-sided cooling paths.

Does this MOSFET require special PCB layout considerations for thermal performance?

Yes. To achieve rated performance, the PCB must implement dual-sided copper pours: top-side thermal pad connected to heatsink (via thermal interface material), and bottom-side source pad with ≥2 oz copper and multiple vias to inner ground planes. AN-1035 specifies minimum stencil aperture and substrate copper weight for DirectFET® M4 assembly.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes-the body diode has 1.3 V forward voltage at 41 A and 36 ns reverse recovery time (T_J = 25°C), enabling use in synchronous rectifier configurations. However, its Q_rr of 46 nC requires careful gate timing to avoid shoot-through; external Schottky clamping is recommended for >200 kHz operation.

How does the DirectFET® M4 package differ from standard SO-8 in terms of manufacturability?

The DirectFET® M4 uses copper can construction with no plastic mold compound, requiring vapor-phase or convection reflow per AN-1035-not wave soldering. Stencil thickness must be 125 µm ±10 µm, and solder paste volume must be precisely controlled to prevent voiding in the top-side thermal interface, unlike standard SO-8 which tolerates wider process windows.

AUIRF7648M2TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric M4

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 41A, 10V

Vgs(th) (Max) @ Id:: 4.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric M4

AUIRF7648M2TR FAQ

1.How can I place an order for AUIRF7648M2TR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7648M2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7648M2TR reliable?

The price and inventory of AUIRF7648M2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7648M2TR is usually 5 days.

3.What payment methods are accepted for AUIRF7648M2TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7648M2TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7648M2TR?

AUIRF7648M2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7648M2TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7648M2TR?

For technical support, including AUIRF7648M2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7648M2TR requirements.

6.How does Aetrix verify that AUIRF7648M2TR is sourced from the original manufacturer or authorized distributors?

All AUIRF7648M2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7648M2TR meets industry standards.

7.What is the process for return or replacement of AUIRF7648M2TR?

All AUIRF7648M2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7648M2TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7648M2TR part is unused and in its original packaging.

Return procedure for AUIRF7648M2TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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